Class 252/62.3V - Group VI element-containing

Subclass of Class 252 - Compositions
No. of patents: 25
Last issue date: 10/08/2002

Number	Title	Issue Date
6461582	Single-crystal rod and process for its production A single-crystal rod, obtained using CZ crucible pulling, has a crystal cone and a cylindrical single-crystal rod, and the crystal cone has an apex angle of 30° to 90°. There is also a process for producing dislocation-free single-crystal rods using CZ ...	10/08/2002
6312617	Conductive isostructural compounds A family of isostructural compounds have been prepared having the general formula An Pbm Bin Q2n+m. These compounds possess a NaCl lattice type structure as well as low thermal conductivity and controlled electr...	11/06/2001
6273969	Alloys and methods for their preparation The present invention relates to an alloy comprising a first element A, a second element B, a third element C, and a fourth element D. In the alloy, first element A and second element B are present as a binary compound AB, and third element C and fourth e...	08/14/2001
5242505	Amorphous silicon-based photovoltaic semiconductor materials free from Staebler-Wronski effects Alloys of amorphous silicon with Group VIa elements are disclosed that form high-quality materials for photovoltaic cells that are resistant to Staebler-Wronski photodegradation. Also disclosed are methods for manufacturing the alloys. The alloys can be f...	09/07/1993
5173127	Semi-insulating INP single crystals, semiconductor devices having substrates of the crystals and processes for producing the same A semi-insulating InP single crystal, semiconductor device with a substrate of crystal and processes of producing the same are disclosed. The crystal is derived from an undoped InP single crystal intermediate. The intermediate has a concentration of all n...	12/22/1992
4830877	Compositions for forming insulating films on electromagnetic steel plates and methods for making the same The present invention provides an insulating film-forming composition in which a mixed resinous liquid obtained from a specific proportion of an aqueous emulsion of an acrylic resin and/or an acryl-styrene base resin and an aqueous dispersion of PAN free ...	05/16/1989
4804490	Method of fabricating stabilized threshold switching material A method of stabilizing the switching characteristics of a thin film chalcogenide glass material by subjecting said material to a hydrogenated atmosphere, preferably activated hydrogen and argon. It is also preferred to provide a post hydrogenation anneal...	02/14/1989
4649227	Photoactive pyrite layer and process for making and using same Photoactive pyrite layers, whose preparation and use represent a commercially highly interesting alternative to materials hitherto in common use. The semiconductor material chiefly used until now, e.g. for solar cells, is silicon. However, its costs of ma...	03/10/1987
4634493	Method for making semiconductor crystals A planar solid-state recrystallization process for growing mercury cadmium telluride (MCT) crystals suitable for semiconductor applications, in which molten MCT material is solidified in a horizontal sealed ampoule having a substantial portion of its lowe...	01/06/1987
4602189	Light sink layer for a thin-film EL display panel A thin-film electroluminescent (EL) panel operating as a matrix-addressed display is provided with a light sink layer immediately behind the phosphor layer thereof to enhance the legibility of the display under high ambient light conditions. The light sin...	07/22/1986
4344476	Supercool method for producing single crystal mercury cadmium telluride A process for producing single crystal Hg1-x Cdx Te is disclosed. An ingot of Hg1-x cdx Te is prepared from a stoichiometric mixture of mercury, cadmium and tellurium by the supercooling of a heated mixture ther...	08/17/1982
4263604	Graded gap semiconductor detector A variable temperature method for the preparation of single and multiple taxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide, [Pb1-w Cdw ]a [S]1-a	04/21/1981
4249987	Method of growing large Pb_1-x -Sn_x -Te single crystals where 0 Large single crystals of Pb1-x -Snx -Te are grown in a near-equilibrium condition by applying a minimal driving force such that a high degree of growth reliability is achieved. The process utilized allows the growth mechanism to take...	02/10/1981
4228454	High temperature cadmium boracite semiconductor device A cadmium boracite crystal electronic device, having at least one silver containing electrode, which is useful as a symmetric current controlling device for DC, DC pulse and AC circuits, an asymmetric current controlling device for DC and DC pulse circuit...	10/14/1980
4154631	Equilibrium growth technique for preparing PbS_x Se_1-x epilayers A high temperature method for the preparation of single and multiple epitaxial layers of single-phase lead sulfide-selenide, [Pb]a [Sx Se1-x ]1-a wherein x varies between one and zero, inclusive, and a=0.500&#b1...	05/15/1979
4144147	Photolysis of water using rhodate semiconductive electrodes Decomposition of water into hydrogen and oxygen by sunlight is accomplished by using a rhodate p-type semiconductor as cathode and an n-type semiconductor or a metal as anode. A cell exposed to sunlight using a rhodate cathode and an n-type TiO2	03/13/1979
4076572	Crystal growth and anneal of lead tin telluride by recrystallization from a heterogeneous system Large bulk single crystals of lead tin telluride are synthesized by first mixing desired amounts of lead, tin and tellurium with, if desired, bismuth and reacting the mixture at 950° C to form a source material. The source material is then converted into...	02/28/1978
4066481	Metalorganic chemical vapor deposition of IVA-IVA compounds and composite A composite comprising a monocrystalline substrate and one or more layers or films of monocrystalline IVA-VIA compounds and/or alloys formed thereon by a chemical vapor deposition process. The composite is formed at a preferred temperature range of approx...	01/03/1978
4040917	Preparation of intercalated chalcogenides Ions are intercalated in chalcogenides by flowing a current through a system comprising a cathode which contains the chalcogenides (e.g., TaS2 is a suitable chalcogenide), an anode containing electronically conductive material which is not a so...	08/09/1977
4006107	Method of producing ternary lead molybdenum sulfides The method of preparing Pbx Moy Sz where x = 0.8-1.1, y = 4.5-5.6, and z = 5.4-7.2 comprising the steps of mixing commercial reagent grade powders of the reactants, heating in a sealed, evacuated reaction vessel to a tempe...	02/01/1977
3961998	Vacuum deposition method for fabricating an epitaxial PbSnTe rectifying metal semiconductor contact photodetector A junction photodetector employing Pb1-x Snx Te in narrow film strips grown epitaxially on an appropriate substrate. An appropriate metal overlaps the film to form a metal-semiconductor contact....	06/08/1976
3956461	Orthorhombic rare earth Hf and Zr sulfides and selenides Solid compositions of the formula where M is one or more element selected from the group consisting of the rare earths of atomic numbers 57-71 and yttrium, but excluding europium and ytterbium, M' is one or more of zirconium and hafnium, and X is sulfur o...	05/11/1976
3945935	Semiconductive metal chalcogenides of the type Cu₃ VS₄ and methods for preparing them Novel semiconductive tertiary and higher order type copper-Group V transition metal chalcogenides having useful broad-band photoconductive properties are characterized by containing fewer than 100 ppm of impurities as determined by electron microprobe ana...	03/23/1976
3940472	Quaternary sulfides and selenides containing Ba or Sr and selected transition metals Described herein are solid compositions of the formula M m'1.sub.-y M"y X3 where M is Ba or Sr M' is one or more of Ta and Nb M" is one or more of Cr, Mn, Fe, Co, Ni, Cu, Rh and Ir X is one or more of S and Se, and Y is 0.33 to 0.5, With...	02/24/1976
3932291	Preparation and doping of semiconducting forms of CuAlS₂ New forms of copper aluminum sulfide are semiconductors. Depending on the amount of dopant present, they are either p-type or n-type....	01/13/1976

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Class 252/62.3V - Group VI element-containing