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| Number | Title | Issue Date |
| 8003002 | P-type thermoelectric materials, a process for their manufacture and uses thereof A thermoelectric material of the p-type having the stoichiometric formula Zn4Sb3, wherein part of the Zn atoms optionally being substituted by one or more elements selected from the group comprising Sn, Mg, Pb and the transition metals in a tot... | 08/23/2011 |
| RE39640 | Conductive isostructural compounds A family of isostructural compounds have been prepared having the general formula AnPbmBinO2n+m. These compounds possess a NaCl lattice type structure as well as low thermal conductivity and controlled electrical conductiv... | 05/22/2007 |
| 6833083 | Thermoelectric material and thermoelectric converting element using the same Compounds are expressed by general formula of AxBC2−y where 0≦x≦2 and 0≦y | 12/21/2004 |
| 6700053 | Thermoelectric module A thermoelectric module comprising an N-type thermoelectric element having excellent characteristics in air atmosphere even when the temperature rises to a medium-to-high temperature region of about 500° C. and, further, improving the conversion efficien... | 03/02/2004 |
| 6602438 | Structure for polymeric thermistor and method of making the same A structure for polymeric thermistor device and method of making the same are disclosed. The polymeric thermistor makes use of a polymeric composite filled with conductive filler and show resistance variations at different temperatures. A polymeric substr... | 08/05/2003 |
| 6563039 | Thermoelectric unicouple used for power generation A high-efficiency thermoelectric unicouple is used for power generation. The unicouple is formed with a plurality of legs, each leg formed of a plurality of segments. The legs are formed in a way that equalized certain aspects of the different segments. D... | 05/13/2003 |
| 6452085 | Thermoelectric device A thermoelectric device includes a thermoelectric element composed of principally thermoelectric material, a counter element adhered to the thermoelectric material. A solder layer lies between the thermoelectric element and the counter element and adheres... | 09/17/2002 |
| 6403874 | High-efficiency heterostructure thermionic coolers A heterostructure thermionic cooler and a method for making thermionic coolers, employing a barrier layer of varying conduction bandedge for n-type material, or varying valence bandedge for p-type material, that is placed between two layers of material. T... | 06/11/2002 |
| 6388185 | Microfabricated thermoelectric power-generation devices A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During ope... | 05/14/2002 |
| 6340787 | Power converter for supplying electricity from a difference in temperature An energy converting circuit, boosting the voltage supplied by a low direct voltage source, comprising a self-oscillating circuit, operating at very low voltage, using a voltage boosting transformer generating control signals of two chopper-boosters opera... | 01/22/2002 |
| 6323414 | Heterostructure thermionic coolers A heterostructure thermionic cooler and a method for making thermionic coolers, employing a barrier layer of varying conduction bandedge for n-type material, or varying valence bandedge for p-type material, that is placed between two layers of material. T... | 11/27/2001 |
| 6312617 | Conductive isostructural compounds A family of isostructural compounds have been prepared having the general formula An Pbm Bin Q2n+m. These compounds possess a NaCl lattice type structure as well as low thermal conductivity and controlled electr... | 11/06/2001 |
| 6288321 | Electronic device featuring thermoelectric power generation A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During ope... | 09/11/2001 |
| 6172294 | Thermoelectric semiconductor having a sintered semiconductor layer and fabrication process thereof A thermoelectric semiconductor is formed of a sintered semiconductor layer and metal layers arranged on sides of opposite end faces of the sintered semiconductor layer. These metal layers are to inhibit a reaction between the sintered semiconductor layer ... | 01/09/2001 |
| 6096965 | Quantum well thermoelectric material on organic substrate Thermoelectric elements for use in a thermoelectric device. The thermoelectric elements have a very large number of alternating layers of semiconductor material deposited on a very thin organic substrate. The layers of semiconductor material alternate bet... | 08/01/2000 |
| 6096964 | Quantum well thermoelectric material on thin flexible substrate Thermoelectric elements for use in a thermoelectric device. The thermoelectric elements have a very large number of alternating layers of semiconductor material deposited on a very thin flexible substrate. The layers of semiconductor material alternate be... | 08/01/2000 |
| 6090735 | Semiconductive ceramic composition and semiconductive ceramic element using the same A semiconductive ceramic composition having negative resistance-temperature characteristics, wherein the composition comprises lanthanum cobalt oxide as the primary component, and, as secondary components, at least one oxide of an element selected from B,... | 07/18/2000 |
| 6001271 | Conductive/insulating graded GaAs bulk material A composition of matter comprising a bulk material of uniform composition having first and second spaced apart surface regions and a dopant in the bulk material of progressively increasing concentration in a direction from the first to said second surface... | 12/14/1999 |
| 5994639 | Thermodynamically metastable skutterudite crystalline-structured compounds Thermodynamically metastable skutterudite crystalline-structured compounds are disclosed having preselected stoichiometric compositions and superior and optimizable thermoelectric properties. The compounds are formed at low nucleation temperatures and sat... | 11/30/1999 |
| 5922988 | Thermoelectric material A thermoelectric material which exhibits an excellent thermoelectric performance even when it is used at elevated temperatures is shown and described. A thermoelectric material is provided having conductive layers made of a first semiconductor only, and b... | 07/13/1999 |
| 5912429 | High temperature thermoelectric material and its production method Thermoelectric material for high temperature use made of a sintered body of a relative density of at least 75% consisting mainly of cobalt antimony compounds having an elemental ratio Sb/(Co+additives)=x of 2.7 | 06/15/1999 |
| 5886292 | Thermoelectric material A thermoelectric material having excellent thermoelectric performance is shown and described. A thermoelectric material is formed having a plurality of conductive layers and a plurality of barrier layers that are alternatingly formed one upon the other su... | 03/23/1999 |
| 5831286 | High mobility p-type transition metal tri-antimonide and related skutterudite compounds and alloys for power semiconducting devices Transition metals (T) of Group VIII (Co, Rh and Ir) have been prepared as semiconductor alloys with Sb, P, and As, having the general formula TX, wherein X is Sb3, P3, or As3. The skutterudite-type crystal lattice structur... | 11/03/1998 |
| 5726381 | Amorphous thermoelectric alloys and thermoelectric couple using same Thermoelectric material contains one or more than one element selected from the transition metals and the rare earth metals, and the element promotes the amorphous phase in the thermoelectric material so as to increase the figure of merit.... | 03/10/1998 |
| 5708233 | Thermoelectric semiconductor material A thermoelectric semiconductor material is used for thermoelectric conversion in a thermoelectric conversion device. The material comprises a double oxide having one of a normal spinel crystal structure and an inverse spinel crystal structure, the double ... | 01/13/1998 |
| 5661094 | Sintered ceramic for high-stability thermistors and method for production thereof A sintered ceramic for high-stability thermistors is based on Nix Mn3-x O4, where x>0. The sintered ceramic has the general formula Cuz Fe1-y Nix Mn2-x-z+y O4, where z=0 to... | 08/26/1997 |
| 5654081 | Integrated circuit assembly with polymeric underfill body In a method of producing an integrated circuit assembly, an IC device is metallurgically bonded to a supporting substrate. The mounting of the IC device to the substrate also includes a polymeric underfill body adhesively bonding the IC device to the subs... | 08/05/1997 |
| 5637543 | Ceramic composition for thermistor, thermistor element, and process for producing same A ceramic composition for thermistor exhibiting stable resistance values over a wide temperature range and capable of being used for a prolonged time. The composition is represented by (M1 M2 O3)1-x .multidot.(M... | 06/10/1997 |
| 5610111 | Ceramic composition for thermistor Ceramic composition for thermistor for detecting elevated temperatures which exhibits stable properties at elevated temperatures for permitting use in both oxidizing and reducing atmospheres. In a YCrO3 based material, Sr or Sm is partly or com... | 03/11/1997 |
| 5610366 | High performance thermoelectric materials and methods of preparation Transition metals (T) of Group VIII (Co, Rh and Ir) have been prepared as semiconductor alloys with Sb having the general formula TSb3. The skutterudite-type crystal lattice structure of these semiconductor alloys and their enhanced thermoelect... | 03/11/1997 |
| 5547598 | Thermoelectric semiconductor material A thermoelectric semiconductor material comprises Si crystal and crystal of metal silicide selected from the group consisting of Fe, Co, Cr, Mn and Ni. It is preferable that the metal silicide is .beta.-FeSi.sub.2. Moreover, the thermoelectric semiconduct... | 08/20/1996 |
| 5523022 | Semiconductor compound Novel compound semiconductors are of the general formula, X5 YZ4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al Ga, Tl and mixtures the... | 06/04/1996 |
| 5490953 | Semiconductor compound Novel compound semiconductors are of the general formula, X5 YZ4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al, Ga, Tl and mixtures th... | 02/13/1996 |
| 5476604 | Charge injection barrier for positive charging organic photoconductor In organic photoconductors (OPC's) for electrophotography, a barrier layer is placed on top of the OPC. The barrier may have 2 layers--1, an electron withdrawing layer on top of the OPC; and,--2, an electron donating layer on top of the electron withdrawi... | 12/19/1995 |
| 5476822 | Ceramic composition for thermistor, thermistor element, and process for producing same A ceramic composition for thermistor exhibiting stable resistance values over a wide temperature range and capable of being used for a prolonged time. The composition is represented by (M1 M2 O3)1-x .multidot.(M... | 12/19/1995 |
| 5427716 | Compound semiconductors and semiconductor light-emitting devices using the same Novel compound semiconductors are of the general formula, X5 YZ4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al, Ga, Tl and mixtures thereof... | 06/27/1995 |
| 5382387 | Mouldings containing expandable graphite, their production and their use Mouldings containing expanded expandable graphite are characterised in that they additionally contain acid phosphates of metals of group 2 and/or 3 of the periodic table of the elements and/or pyrolysis products thereof. Such mouldings are distinguished b... | 01/17/1995 |
| 5094769 | Compliant thermally conductive compound A compliant thermally conductive, preferably dielectric, compound that enhances the power dissipation capability of high-powered electrical components such as bipolar VLSI semiconductor chips. The compound has chemically stable thermal conduction and visc... | 03/10/1992 |
| 5061652 | Method of manufacturing a semiconductor device structure employing a multi-level epitaxial structure A semiconductor structure including a doped semiconductor substrate defining a surface. A buffer layer of epitaxial semiconductor material overlies the substrate surface, the buffer layer having a relatively higher dopant concentration than the substrate ... | 10/29/1991 |
| 5000875 | Conductive filled fluoropolymers Tetrafluoroethylene copolymer compositions containing conductive carbon black, graphite fiber or thermally conductive fillers have significantly increased conductivity when the tetrafluoroethylene copolymer has been treated with a fluorinating agent.... | 03/19/1991 |
