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| Number | Title | Issue Date |
| 7338615 | Dielectric media A novel method of fabrication of periodic dielectric composites involving a flexible computer design stage, rapid growth of a second dielectric component. Laser stereolithography is used to form the polymer material layer by layer by photopolymerisation of a liquid.... | 03/04/2008 |
| 7238296 | Resistive composition, resistor using the same, and making method thereof When the entire amount of conductive metal mixed powder made of copper, manganese, and germanium is 100 parts by weight, the metal mixed powder is formed by mixing 4.0 to 13.0 parts manganese by weight, 0.2 to 1.4 parts germanium by weight, and 85.6 to 95.8 parts co... | 07/03/2007 |
| 6663794 | Reducing-atmosphere-resistant thermistor element, production method thereof and temperature sensor This invention provides a reducing-atmosphere-resistant thermistor element, the resistance of which does not greatly change even when the element is exposed to a reducing atmosphere, and which has high accuracy and exhibits excellent resistance value stab... | 12/16/2003 |
| 6645393 | Material compositions for transient voltage suppressors The material for transient voltage suppressors is composed of at least two kinds of evenly-mixed powders including a powder material with non-linear resistance interfaces and a conductive powder. The conductive powder is distributed in the powder with non... | 11/11/2003 |
| 6627120 | Conductive paste and laminated ceramic electronic component In order to achieve miniaturization and an increase in the capacitance of a monolithic ceramic capacitor, a conductive paste suitable for forming an internal conductor film is provided, the layer thickness of the internal conductor film being decreased wi... | 09/30/2003 |
| 6586867 | Glass spacer of particular composition and electron-beam emitting display device A glass spacer for an electron-beam emitting display device is composed of non alkaline glass having almost the same linear expansion coefficient as that of soda-lime-silica glass. The glass includes SiO2 with 10 to 35 percent by mass, RO, in w... | 07/01/2003 |
| 6305840 | Thermopile detector and method for fabricating the same Thermopile detector and method for fabricating the same, the method including the steps of (1) forming a diaphragm film on a substrate, (2) forming thermocouples in a given region on the diaphragm film, (3) forming a protection film on the thermocouples, ... | 10/23/2001 |
| 6291088 | Inorganic overcoat for particulate transport electrode grid An inorganic, top-surface, semiconducting dielectric overcoat, having a selected time constant permits electric field charge and dissipation at a selected rate to facilitate particulate material movement over an underlying electrode grid. The coating may ... | 09/18/2001 |
| 6265462 | Method for Producing a Diffusion Barrier and Polymeric Article Having a Diffusion Barrier A method of forming a diffusion barrier on an article of a polymer blend of (i) a high surface energy polymer and (ii) a low surface energy polymer. Most commonly the low surface energy polymer is an organosilicon polymer, as a polysilane or a polysiloxan... | 07/24/2001 |
| 6264857 | Proton conductors which are thermally stable over a wide range and have good proton conductivities Proton conductors comprising from 1 to 99% by weight of an acid and from 99 to 1% by weight of a nonaqueous amphoteric material which are thermally stable from -50° C. to 400° C. and have a proton conductivity of ࣙ10-5 S/cm. The invention f... | 07/24/2001 |
| 6264587 | Exercise wheel An exercise wheel includes a housing, a chassis housed by the housing and including a compartment, a pair of rollers rotatably mounted in the compartment of the chassis and connected by a shaft, a main gear rotatably mounted in the compartment of the chas... | 07/24/2001 |
| 6232363 | Method for producing a diffusion barrier and polymeric article having a diffusion barrier A method of forming a diffusion barrier on an article of a polymer blend of (i) a high surface energy polymer and (ii) a low surface energy polymer. Most commonly the low surface energy polymer is an organosilicon polymer, as a polysilane or a polysiloxan... | 05/15/2001 |
| 6204305 | Method for producing a diffusion barrier and polymeric article having a diffusion barrier A method of forming a diffusion barrier on an article of a polymer blend of (i) a high surface energy polymer and (ii) a low surface energy polymer. Most commonly the low surface energy polymer is an organosilicon polymer, as a polysilane or a polysiloxan... | 03/20/2001 |
| 6106739 | Method and apparatus for fabricating near spherical semiconductor single crystal particulate and the spherical product produced An apparatus and a method for producing single crystal semiconductor particulate in near spherical shape and the particulate product so formed is accomplished by producing uniform, monosized, near spherical droplets; identifying the position of an underco... | 08/22/2000 |
| 6103138 | Silicon-system thin film, photovoltaic device, method for forming silicon-system thin film, and method for producing photovoltaic device This invention provides a silicon-system thin film, characterized by containing at least 1 ppm of phosphorus atoms and diffraction intensity at the (220) plane with X ray or electron beams of at least 30% of total diffraction intensity, photovoltaic devic... | 08/15/2000 |
| 6077343 | Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it There is disclosed a method for producing a silicon single crystal wafer wherein a silicon single crystal is grown in accordance with the CZ method with doping nitrogen in an N-region in a defect distribution chart which shows a defect distribution in whi... | 06/20/2000 |
| 6028264 | Semiconductor having low concentration of carbon Non-single-crystalline semiconductor material or device containing carbon impurity in a concentration less than 4×1018 atoms/cm3.... | 02/22/2000 |
| 5965056 | Radio wave absorbent A radio wave absorbent comprises an Ni--Cu--Zn base ferrite having a major composition comprising 49 to less than 50 mol % of Fe2 O3, 32 to 35 mol % of ZnO, 3 to 9 mol % of CuO and 9 to 14 mol % of NiO. The radio wave absorbent furth... | 10/12/1999 |
| 5949130 | Semiconductor integrated circuit device employing interlayer insulating film with low dielectric constant A plurality of lines are formed on the principal face of a substrate. An insulating film is formed on the principal surface of this substrate so as to cover the lines. This insulating film consists of a material which contains a low-dielectric constant co... | 09/07/1999 |
| 5945258 | Process for producing multilayer printed circuit boards A process for producing a multilayer printed circuit board produced characterized by using a special thermosetting epoxy resin composition comprising (a) an epoxy resin, (b) a crosslinking agent and (c) a polyfunctional epoxy resin, for forming a thermose... | 08/31/1999 |
| 5665176 | n-Type thermoelectric materials An n-type thermoelectric material composed mainly of an iron-silicite compound represented by a chemical formula of FeSi2+z in which -0.1 | 09/09/1997 |
| 5571495 | Dielectric thin film of substituted lead titanate Proposed is a dielectric thin film of a substituted lead titanate having a chemical composition expressed by the formula Pb(Ti1-x Mx)O3 in which the subscript x is a positive number in the range from 0.05 to 0.50 and M is an el... | 11/05/1996 |
| 5523022 | Semiconductor compound Novel compound semiconductors are of the general formula, X5 YZ4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al Ga, Tl and mixtures the... | 06/04/1996 |
| 5490953 | Semiconductor compound Novel compound semiconductors are of the general formula, X5 YZ4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al, Ga, Tl and mixtures th... | 02/13/1996 |
| 5454861 | Composition for forming protective layer of dielectric material There is disclosed a composition for forming a protective layer of a dielectric material which comprises: (A) alkaline earth metal oxide particles; and (B) one or more organic compounds containing a metal element and represented by the formula (I): M1 | 10/03/1995 |
| 5439742 | Electrical insulating vinyl halide resin compositions Electrical insulating compositions of vinyl halide resins (PVC) are formulated to contain a polymeric metal aromatic polycarboxylate as an electrical insulating additive. For example, polymeric calcium terephthalate is used in minor amounts of about 0.2 t... | 08/08/1995 |
| 5427716 | Compound semiconductors and semiconductor light-emitting devices using the same Novel compound semiconductors are of the general formula, X5 YZ4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al, Ga, Tl and mixtures thereof... | 06/27/1995 |
| 5382387 | Mouldings containing expandable graphite, their production and their use Mouldings containing expanded expandable graphite are characterised in that they additionally contain acid phosphates of metals of group 2 and/or 3 of the periodic table of the elements and/or pyrolysis products thereof. Such mouldings are distinguished b... | 01/17/1995 |
| 5322813 | Method of making supersaturated rare earth doped semiconductor layers by chemical vapor deposition A CVD process for producing a rare earth-doped, epitaxial semiconductor layer on a substrate is disclosed. The process utilizes a silane or germane and a rare earth compound in the gas phase. By this method single phase, rare earth-doped semiconductor lay... | 06/21/1994 |
| 5089082 | Process and apparatus for producing silicon ingots having high oxygen content by crucible-free zone pulling, silicon ingots obtainable thereby and silicon wafers produced therefrom Silicon ingots, in particular, with diameters of approximately 75 mm and greater, can be produced by zone pulling with an oxygen content comparable to crucible-pulled material if a flat quartz element is brought into contact with the molten cap during the... | 02/18/1992 |
| 5067989 | Single crystal silicon Single crystal silicon for a substrate of semiconductor integrated circuits is disclosed. Cu, Fe, Ni and Cr are contained as impurities in a concentration smaller than 0.1 ppta, respectively, and the total content of the impurities is less than 0.4 ppta. ... | 11/26/1991 |
| 5051785 | N-type semiconducting diamond, and method of making the same N-type semiconducting diamond is disclosed, which is intrinsically, i.e., at the time of diamond formation, doped with n-type dopant atoms. Such diamond is advantageously formed by chemical vapor deposition from a source gas mixture comprising a carbon so... | 09/24/1991 |
| 5017308 | Silicon thin film and method of producing the same A silicon thin film is composed of primarily silicon atoms, 0 to 8 atm % hydrogen, at least one element selected from the group including fluorine, chlorine, bromine and iodine, and an impurity element, wherein about 80 to 100% of microcrystalline grains ... | 05/21/1991 |
| 5009783 | Separation of compositions containing water and organic oxygenates Water is separated from aqueous mixtures of organic oxygenates such as isopropanol by pervaporation through a non-porous separating membrane of a blend of polyvinyl alcohol and a polyacrylic acid mounted on a polysulfone porous support layer.... | 04/23/1991 |
| 4839701 | Hydrogenated amorphous silicon film A process for production of a hydrogenated amorphous silicon film of a silicon compound containing at least one element selected from the group consisting of hydrogen and halogens and having a photosensitivity of not less than 0.1 erg/cm2 at 78... | 06/13/1989 |
| 4775425 | P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same An n-type microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap widening element; and electronic and photovoltaic devices inco... | 10/04/1988 |
| 4761711 | Barrier layer ceramic dielectric capacitor containing barium plumbate A barrier layer ceramic capacitor and a method of making the same, using barium plumbate or modified barium plumbate as the base material. The fabricating process is a one step process requiring a maximum sintering temperature of 1000° C.... | 08/02/1988 |
| 4713192 | Doping of catenated phosphorus materials High phosphorus polyphosphides, namely MPx, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and where x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful se... | 12/15/1987 |
| 4670176 | Single crystal of compound semiconductor of groups III-V with low dislocation density More than two impurities are doped in a host crystal of compound semiconductors. One of the impurities is an anisoelectronic impurity. One or more than one impurities are isoelectronic impurities. The anisoelectronic impurity determines the electronic pro... | 06/02/1987 |
| 4650539 | Manufacture of cadmium mercury telluride A layer of Cdx Hg1-x Te is grown on the surface of a substrate by decomposing alkyls of cadmium and telluride in a mercury atmosphere. The substrate is placed in a vessel containing a mercury bath with the vessel and bath at a suitab... | 03/17/1987 |
