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...When G.G. Hubbard learned of his future son-in-law's invention, he called it "only a toy." His daughter was engaged to a young man named Alexander Graham Bell.
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| Number | Title | Issue Date |
| 7862738 | Luminous body The present invention relates to an inorganic composition mainly containing a compound semiconductor, wherein the inorganic composition contains iridium element. The invention also relates to a method of producing an inorganic composite for producing an luminescent ... | 01/04/2011 |
| 6627100 | Current/voltage non-linear resistor and sintered body therefor A current/voltage non-linear resistor comprises a sintered body having a main component of ZnO, an electrode applied to a surface of the sintered body and an insulation material applied to another surface of the sintered body. The main component containin... | 09/30/2003 |
| 6325849 | P-type gaas single crystal and method for manufacturing the same Disclosed are a P-type GaAs single crystal having an average dislocation density of 500 cm-2 or lower, and a manufacturing method therefor. The P-type GaAs single crystal is characterized by containing, as dopants, Si at an atomic concentration... | 12/04/2001 |
| 6287478 | Optical window An optical dome or window formed of a composition which is transmissive to infrared frequencies in the range of from about 1 micron to about 14 microns and which is relatively opaque to substantially all frequencies above about 14 microns consisting essen... | 09/11/2001 |
| 6287381 | Crystal growth process for large area GaAs with controllable resistivity and infrared window/dome with EMI-EMP protection formed therefrom An optical dome or window formed of a composition which is transmissive to infrared frequencies in the range of from about 1 micron to about 14 microns and which is relatively opaque to substantially all frequencies above about 14 microns consisting essen... | 09/11/2001 |
| 6277297 | Optical window composition An optical dome or window formed of a composition which is transmissive to infrared frequencies in the range of from about 1 micron to about 14 microns and which is relatively opaque to substantially all frequencies above about 14 microns consisting essen... | 08/21/2001 |
| 6273969 | Alloys and methods for their preparation The present invention relates to an alloy comprising a first element A, a second element B, a third element C, and a fourth element D. In the alloy, first element A and second element B are present as a binary compound AB, and third element C and fourth e... | 08/14/2001 |
| 6126740 | Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films A colloidal suspension comprising metal chalcogenide nanoparticles and a volatile capping agent. The colloidal suspension is made by reacting a metal salt with a chalcogenide salt in an organic solvent to precipitate a metal chalcogenide, recovering the m... | 10/03/2000 |
| 6045767 | Charge for vertical boat growth process and use thereof In vertical boat growth of GaAs single crystal ingots, graphite powder, in selected amounts, is included in the charge to establish directly related planned target electrical characteristics in the as grown ingots. The electrical characteristics correspon... | 04/04/2000 |
| 6010638 | Conductive/insulating graded GaAs bulk material A composition of matter comprising a bulk material of uniform composition having first and second spaced apart surface regions and a dopant in the bulk material of progressively increasing concentration in a direction from the first to said second surface... | 01/04/2000 |
| 6001271 | Conductive/insulating graded GaAs bulk material A composition of matter comprising a bulk material of uniform composition having first and second spaced apart surface regions and a dopant in the bulk material of progressively increasing concentration in a direction from the first to said second surface... | 12/14/1999 |
| 5976398 | Process for manufacturing semiconductor, apparatus for manufacturing semiconductor, and amorphous material A process for manufacturing a semiconductor, including generating a first plasma of a V group element from a V group element source; generating a second plasma of an auxiliary material for activating a metal organic compound containing a III group element... | 11/02/1999 |
| 5942148 | Nitride compacts A hot press method for the fabrication of doped or undoped gallium nitride compacts, and of other nitride compacts, employs as a starting material a powder mixture of the selected nitride and of a nitrogen rich salt. A preferred method for fabricating gal... | 08/24/1999 |
| 5657335 | P-type gallium nitride Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable ... | 08/12/1997 |
| 5612014 | Compound semiconductor crystal A compound semiconductor crystal has a reduced dislocation density reduced. The compound semiconductor crystal doped with an impurity satisfies the following relations, wherein c.c. represents its carrier concentration and η represents its activation fac... | 03/18/1997 |
| 5523022 | Semiconductor compound Novel compound semiconductors are of the general formula, X5 YZ4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al Ga, Tl and mixtures the... | 06/04/1996 |
| 5508829 | LTG AlGaAs non-linear optical material and devices fabricated therefrom A light responsive device (10) has a body (12) that includes a matrix comprised of Group III-V material, the matrix having inclusions (14) comprised of a Group V material contained therein. The body is responsive to a presence of a light beam that has a s... | 04/16/1996 |
| 5490953 | Semiconductor compound Novel compound semiconductors are of the general formula, X5 YZ4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al, Ga, Tl and mixtures th... | 02/13/1996 |
| 5474591 | Method of synthesizing III-V semiconductor nanocrystals The present invention relates, in general, to a method of synthesizing nanocrystals and, in particular, to a method of synthesizing III-V semiconductor nanocrystals in solution at a low temperature and in a high yield. The method comprises the combination... | 12/12/1995 |
| 5427716 | Compound semiconductors and semiconductor light-emitting devices using the same Novel compound semiconductors are of the general formula, X5 YZ4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al, Ga, Tl and mixtures thereof... | 06/27/1995 |
| 5302559 | Mixed crystals of doped rare earth gallium garnet A method of growing mixed crystals having at least two lattice sites each having a different number of adjacent oxygen ions from melts of oxidic multi-component systems, homogeneous mixed crystals being grown such that the cations intended to occupy the f... | 04/12/1994 |
| 5296048 | Class of magnetic materials for solid state devices A new semiconductor material or compound and method for its manufacture is disclosed. The material or compound has the Formula III-V or IV which includes as part of the compound, a transition element or a rare earth element present in an amount sufficient... | 03/22/1994 |
| 5201985 | Method and apparatus for the purification and control of the composition of non-stoichiometric and stoichiometric crystalline compounds This invention relates to a method for purification of non-stoichiometric crystalline compounds by cycling said compound through successive steps of sublimation and crystallization. Purification can be accomplished by providing a vacuum chamber containing... | 04/13/1993 |
| 5122845 | Substrate for growing gallium nitride compound-semiconductor device and light emitting diode A substrate for producing a gallium nitride compound-semiconductor (Al.su Ga1-x N; X=0 inclusive) device in vapor phase on a sapphire substrate using gaseous organometallic compound, and a also blue light emitting diode produced by using the s... | 06/16/1992 |
| 5084128 | Low-temperature synthesis of group III-group V semiconductors This invention relates to a low-temperature process for the preparation of group III-group V semiconducting material. More particularly, in the present process at least one group III compound is reacted with at least one group V compound in an aprotic sol... | 01/28/1992 |
| 5076860 | AlGaN compound semiconductor material A compound semiconductor material includes Gax Al1-x N (wherein 0ࣘxࣘ1) containing B and P and having a zinc blend type crystal structure. A compound semiconductor element includes Gax Al1-x N (wherein 0ࣘxà... | 12/31/1991 |
| 5011564 | Epitaxial growth An equilibrium growth dispersion for use in liquid epitaxial growth at a predetermined growth temperature of a compound including at least two constituents. Predetermined quantities each of the constituents are placed in a container, the predetermined qua... | 04/30/1991 |
| 5007979 | Method of fabricating GaAs single crystal A method of fabricating an undoped or impurity-doped semi-insulating GaAs single crystal with the use of a silica boat comprises the steps of making a melt of GaAs in the silica boat except for a seed crystal, doping the melt with oxygen, maintaining the ... | 04/16/1991 |
| 4999082 | Process for producing monocrystalline group II-IV or group III-V compounds and products thereof This disclosure relates to a process for producing monocrystalline Group II-IV or Group III-V compounds from the polycrystalline form of said Group II-IV or Group III-V compound, said process comprising coating the interior surface of a crucible with a po... | 03/12/1991 |
| 4902486 | Novel gallium arsenide precursor and low temperature method of preparing gallium arsenide therefrom A novel gallium arsenide precursor has the formula R2 GaAs(SiR')2 wherein R is selected from the group consisting of alkyl substituted cycloaliphatic group and alkyl substituted aromatic group and R' is alkyl. Preferably, R is pentam... | 02/20/1990 |
| 4776971 | Gallium arsenide single crystals with low dislocation density and high purity Undoped GaAs single crystals with low dislocation density, low impurity content, 0.20-1 Kg in weight and constant diameter of 1"-2" (inches), said single crystals being obtained with LEC technology at low or high pressure with synthesis of the polycrystal... | 10/11/1988 |
| 4756792 | Method for vapor-phase epitaxial growth of a single crystalline-, gallium arsenide thin film In a GaAs epitaxial wafer including, for example, two epitaxial layers having high and low carrier concentrations, the carrier concentration of the low carrier concentration layer is liable to greatly vary, so that wafers suitable for FETs and Schottky ba... | 07/12/1988 |
| 4670176 | Single crystal of compound semiconductor of groups III-V with low dislocation density More than two impurities are doped in a host crystal of compound semiconductors. One of the impurities is an anisoelectronic impurity. One or more than one impurities are isoelectronic impurities. The anisoelectronic impurity determines the electronic pro... | 06/02/1987 |
| 4618396 | GaAs single crystal and preparation thereof A GaAs single crystal is disclosed containing at least one impurity selected from the group consisting of In, Al, C and S, in which fluctuation of the concentration of the impurity is less that 20% throughout the crystal from which wafers having uniform c... | 10/21/1986 |
| 4609530 | GaAs single crystal with small fluctuation in impurity concentration in the plane perpendicular to the growth direction of the crystal A GaAs single crystal containing at least one impurity selected from the group consisting of B, Si, S, Te and In in a concentration of at least 1015 /cm3, fluctuation of which is not larger than 20% in a plane perpendicular to a grow... | 09/02/1986 |
| 4594173 | Indium doped gallium arsenide crystals and method of preparation A method of fabrication of low dislocation single crystal indium-doped gallium arsenide, and improved crystal structure. The method is an improved liquid encapsulant Czochralski process with an indium doping level of 5×1019 to 3×1020 | 06/10/1986 |
| 4550014 | Method for production of free-standing polycrystalline boron phosphide film A process for producing a free-standing polycrystalline boron phosphide film comprises growing a film of boron phosphide in a vertical growth apparatus on a metal substrate. The metal substrate has a coefficient of thermal expansion sufficiently different... | 10/29/1985 |
| 4529027 | Method of preparing a plurality of castings having a predetermined composition A method is set forth for simultaneously preparing a plurality of castings of a solution of an element, or compound, in a solvent, which solvent may also be an element and/or a compound. The solution is saturated at a temperature Ts. A problem ... | 07/16/1985 |
| 4521951 | Method of reduction of a compound forming a layer on a substrate and the application of said method to the fabrication of a field-effect semiconducting structure The method of reduction comprises two successive steps. The first step consists in forming an electrolyte layer at the surface of the layer to be reduced which is an oxidized surface layer of a substrate. During the second step, the layer is reduced throu... | 06/11/1985 |
| 4447276 | Molecular beam epitaxy electrolytic dopant source A method of growing crystalline semiconductors such as GaAs is disclosed. The method involves epitaxial deposition from the vapor phase and provides dopant material such as sulphur in the form of a molecular beam. The molecular beam is developed by effusi... | 05/08/1984 |
