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| Number | Title | Issue Date |
| 6672330 | Valve bonded with corrosion and wear proof alloy and apparatuses using said valve A valve is characterized by excellent corrosion and wear resistance and maintainability due to use of a bonding corrosion and wear proof alloy containing non-continuously distributed eutectic carbide on the sliding portions of various types of apparatuses... | 01/06/2004 |
| 6645393 | Material compositions for transient voltage suppressors The material for transient voltage suppressors is composed of at least two kinds of evenly-mixed powders including a powder material with non-linear resistance interfaces and a conductive powder. The conductive powder is distributed in the powder with non... | 11/11/2003 |
| 6602438 | Structure for polymeric thermistor and method of making the same A structure for polymeric thermistor device and method of making the same are disclosed. The polymeric thermistor makes use of a polymeric composite filled with conductive filler and show resistance variations at different temperatures. A polymeric substr... | 08/05/2003 |
| 6589488 | Molding for supporting a monolith in a catalytic converter An immobilizing structure for use in immobilizing a ceramic monolith in a catalytic converter employs a molding which comprises finely divided metal oxide and fibers which do not represent a health risk, has a density of 100-240 kg/m3, and has ... | 07/08/2003 |
| 6273969 | Alloys and methods for their preparation The present invention relates to an alloy comprising a first element A, a second element B, a third element C, and a fourth element D. In the alloy, first element A and second element B are present as a binary compound AB, and third element C and fourth e... | 08/14/2001 |
| 6025289 | Colorless silicon carbide crystals Large single crystals of silicon carbide are grown in a furnace sublimation system. The crystals are grown with compensating levels of p-type and n-type dopants (i.e., roughly equal levels of the two dopants) in order to produce a crystal that is essentia... | 02/15/2000 |
| 5611955 | High resistivity silicon carbide substrates for high power microwave devices A substrate for use in semiconductor devices, fabricated of silicon carbide and having a resistivity of greater than 1500 Ohm-cm. The substrate being characterized as having deep level impurities incorporated therein, wherein the deep level elemental impu... | 03/18/1997 |
| 5200805 | Silicon carbide:metal carbide alloy semiconductor and method of making the same A new type of semiconductor material is disclosed which consists of a ଲ-SiC:metal carbide alloy having the general formula Siw (metal 1)x (metal 2)y (metal 3)z C, where w+x+y+z=1 and 1>w>0. The metals are ... | 04/06/1993 |
| 5082806 | Semi-conducting ceramic A semi-conducting ceramic is disclosed. The ceramic consists essentially of from 50 percent to 72 percent of silicon carbide particles, from 25 percent to 47 percent of silicon nitride particles and a modified silicon oxynitride glass bonded to the silico... | 01/21/1992 |
| 5028346 | Semi-conducting ceramic A semi-conducting ceramic is disclosed. The ceramic consists essentially of from 50 percent to 72 percent of silicon carbide particles, from 25 percent to 47 percent of silicon nitride particles and a modified silicon oxynitride glass bonded to the silico... | 07/02/1991 |
| 5002905 | Hexagonal silicon carbide platelets and preforms and methods for making and using same Crystalline silicon carbide wherein at least 90 weight percent of the silicon carbide is formed from a plurality of hexagonal crystal lattices wherein at least 80 weight percent of the crystals formed from the lattices contain at least a portion of opposi... | 03/26/1991 |
| 4914042 | Forming a transition metal silicide radiation detector and source Transition metal silicide semiconductor electromagnetic radiation source and detectors have a thin film of semiconducting silicide grown or deposited on a silicon wafer. The transition metals are chosen from a group consisting of iron, iridium, manganese,... | 04/03/1990 |
| 4874438 | Intermetallic compound semiconductor thin film and method of manufacturing same An intermetallic compound semiconductor thin film comprises a single crystalline deposition thin film made of a III-V group intermetallic compound having a stoichiometry composition ratio of 1:1. When forming the III-V group semiconductor thin film by an ... | 10/17/1989 |
| 4499331 | Amorphous semiconductor and amorphous silicon photovoltaic device An amorphous silicon semiconductor of the general formula: a-Si.sub.(1-x-y) Cx Ny containing hydrogen and/or fluorine, which provides an amorphous silicon PIN junction photovoltaic device having an improved conversion efficiency when... | 02/12/1985 |
| 4489128 | Structure containing epitaxial crystals on a substrate Crystals of silicon carbide and aluminum nitride, substrates containing same, and the fabrication thereof.... | 12/18/1984 |
| 4209474 | Process for preparing semiconducting silicon carbide sintered body A silicon carbide sintered body exhibiting N-type semiconductivity is produced by shaping a mixture of ଲ-silicon carbide, boron additive and a carbonaceous additive into a green body and sintering the body in an atmosphere containing nitrogen to pro... | 06/24/1980 |
| 4147572 | Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition technique A method of producing epitaxial semiconductor monocrystal materials of silicon carbide with the silicon carbide crystals being grown by crystallizing sublimed silicon carbide vapors.... | 04/03/1979 |
| 4032371 | Method of making a thermo-element The invention relates to a method of making a thermo-element having two sections with two electric conductor materials of different thermo-electric properties connected in series. The method involves forming a porous base body with interconnected pores an... | 06/28/1977 |
| 3960619 | Process for preparing layers of silicon carbide on a silicon substrate In a process for producing an epitaxial layer of hexagonal silicon carbide on a silicon monocrystal substrate by simultaneous reduction or thermal decomposition of a gas mixture containing silicon halides and organosilanes, or mixtures thereof, hydrocarbo... | 06/01/1976 |
| 3956032 | Process for fabricating SiC semiconductor devices Sections are cut from a SiC platelet such that the sections have a-faces parallel to the c-axis of the SiC platelet. The sections serve as substrates for the growth of SiC layers by attaching the substrates to a body which is then placed in a chamber and ... | 05/11/1976 |
