An electrified table cloth for preventing crawling insects from gaining access to the consumer's food or drink.
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8182722 | Methods for manufacturing zinc oxide base sputtering target and transparent electrically conductive film A method for manufacturing a zinc oxide based sputtering target includes the step of producing a zinc oxide based sputtering target by using γ-Al2O3 as a dopant material. ... | 05/22/2012 |
| 8153033 | Amorphous transparent conductive film, target and production method for amorphous conductive film An amorphous transparent conductive film containing as a main component a six oxygen-coordinated metal oxide, and satisfying, in a radial distribution function (RDF) obtained by an X-ray scattering measurement, a relationship of A/B>1, providing that the maximum val... | 04/10/2012 |
| 8038910 | Low solar absorptance, high emissivity, inorganic electrostatic dissipative thermal control coating An electrostatic dissipative paint having a pigment. The pigment includes a composition according to the following formula: (Mg1−x,Znx)Ga2+yO4−δ wherein the value of x is a value from about 0 to 1,... | 10/18/2011 |
| 8029702 | Low solar absorptance, high emissivity, inorganic electrostatic dissipative thermal control coating An electrostatic dissipative paint including a plurality of particles having a composition selected from the group consisting of gallium magnesium oxide, gallium aluminum magnesium oxide and combinations thereof. The paint further includes an inorganic binder mixed ... | 10/04/2011 |
| 8017045 | Composition for oxide semiconductor thin film and field effect transistor using the composition Provided is a composition for an oxide semiconductor thin film and a field effect transistor (FET) using the composition. The composition includes from about 50 to about 99 mol % of a zinc oxide (ZnO); from about 0.5 to 49.5 mol % of a tin oxide (SnOx); a... | 09/13/2011 |
| 8007693 | Zinc oxide based transparent electric conductor, sputtering target for forming of the conductor and process for producing the target Provided is a zinc oxide transparent electric conductor having zinc oxide (ZnO) as its principal component, containing an element to become an n-type dopant to zinc oxide, containing metal M in which P(P=(G+H mix)/RT, wherein G is the Gibbs free energy at temperatur... | 08/30/2011 |
| 8007694 | P-type metal oxide semiconductor material and fabrication method thereof A fabrication method for a p-type metal oxide semiconductor material is disclosed, including providing a lithium salt and a zinc salt to be mixed in a solution, wherein to the solution is added a chelating agent to form a metal complex compound comprising lithium an... | 08/30/2011 |
| 7998372 | Semiconductor thin film, method for manufacturing the same, thin film transistor, and active-matrix-driven display panel Disclosed is a semiconductor thin film which can be formed at a relatively low temperature even on a flexible resin substrate. Since the semiconductor thin film is stable to visible light and has high device characteristics such as transistor characteristics, in the... | 08/16/2011 |
| 7976738 | Oxide sintered body comprising zinc oxide phase and zinc stannate compound phase An oxide sintered body substantially containing zinc, tin and oxygen; containing tin at an atomic number ratio, Sn/(Zn +Sn), of 0.23 to 0.50, and being composed mainly of a zinc oxide phase and at least one kind of zinc stannate compound phase, or being composed of ... | 07/12/2011 |
| 7897068 | Sputtering target, thin film for optical information recording medium and process for producing the same A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1 | 03/01/2011 |
| 7897067 | Amorphous transparent conductive film, sputtering target as its raw material, amorphous transparent electrode substrate, process for producing the same and color filter for liquid crystal display A transparent conductive film of low resistivity excelling in transparency and etching properties; a sputtering target as its raw material; an amorphous transparent electrode substrate having the transparent conductive film superimposed on a substrate; and a process... | 03/01/2011 |
| 7892457 | Sputtering target, thin film for optical information recording medium and process for producing the same A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1 | 02/22/2011 |
| 7754109 | Varistor element In a varistor element, Ca exists in the grain interior of grains consisting primarily of ZnO in a varistor element body and Ca also exists in a grain boundary. In this crystal structure Ca replaces oxygen defects in the grain interior of grains consisting primarily ... | 07/13/2010 |
| 7744782 | Transparent conductor It is an object of the present invention to provide a transparent conductor exhibiting a small increase in resistance value even when used under high-humidity conditions over long periods of time. A transparent conductor in a preferred embodiment comprises indium ti... | 06/29/2010 |
| 7718095 | Sputtering target, thin film for optical information recording medium and process for producing the same A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1 | 05/18/2010 |
| 7686985 | Gallium oxide-zinc oxide sputtering target, method of forming transparent conductive film, and transparent conductive film Provided is a high density gallium oxide-zinc oxide series sintered body sputtering target for forming a transparent conductive film containing 20 to 500 mass ppm of aluminum oxide. In a gallium oxide (Ga2O3)-zinc oxide (ZnO) series sputtering ... | 03/30/2010 |
| 7682529 | Gallium oxide-zinc oxide sputtering target, method for forming transparent conductive film, and transparent conductive film Provided is a high density gallium oxide-zinc oxide series sintered body sputtering target for forming a transparent conductive film containing 20 to 2000 mass ppm of zirconium oxide. In a gallium oxide (Ga2O3)-zinc oxide (ZnO) series sputterin... | 03/23/2010 |
| 7674404 | Gallium oxide/zinc oxide sputtering target, method of forming transparent conductive film and transparent conductive film Provided is a high-density gallium oxide/zinc oxide sintered sputtering target containing 20 massppm or greater of each zirconium oxide and aluminum oxide, wherein the total content thereof is less than 250 ppm. This gallium oxide (Ga2O3)/zinc ... | 03/09/2010 |
| 7651640 | Gallium containing zinc oxide A gallium containing zinc oxide with an improved heat ray shielding function while keeping high transparency to visible light rays is provided. A gallium containing zinc oxide, which has a heat ray shielding function, a gallium content in the range of 0.25 to 25 % b... | 01/26/2010 |
| 7635440 | Sputtering target, thin film for optical information recording medium and process for producing the same Provided is a sputtering target having a relative density of 80% or more and containing a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1 | 12/22/2009 |
| 7507356 | Voltage non-linear resistance ceramic composition and voltage non-linear resistance element As for the voltage non-linear resistance element layer 2, a sintered body having ZnO as a main component is used. In this sintered body, Pr, Co, Ca, and either Cu or Ni are added. The ranges are; 0.05 to 5.0 atm % of Pr, 0.1 to 20 atm % of Co, 0.01 to 5.0 atm... | 03/24/2009 |
| 7362209 | Zinc oxide resistor and its manufacturing method Disclosed are a zinc oxide resistor structure, and methods of forming a glass layer and a resistor, which are required for producing the resistor structure. The zinc oxide resistor comprises zinc oxide grains and an oxide glass layer which contains bismuth and boron... | 04/22/2008 |
| 7306861 | Sputtering target, sintered compact, electrically conductive film produced by using the same, and organic EL device and substrate used for the same A sintered article is fabricated which contains one or more of indium oxide, zinc oxide, and tin oxide as a component thereof and contains any one or more types of metal out of hafnium oxide, tantalum oxide, lanthanide oxide, and bismuth oxide. A backing plate is at... | 12/11/2007 |
| 7300617 | Method of making fusion cast articles Fusion cast indium zinc oxide articles and methods of manufacturing fusion cast indium zinc articles are disclosed. The fusion cast indium zinc articles can be used as sputtering targets for forming transparent conductive films. ... | 11/27/2007 |
| 7294390 | Method for improving the thermal cycled adhesion of thick-film conductors on dielectric An improved electrical printed circuit exhibiting a combination of enhanced solderability and outstanding adhesion with a dielectric substrate includes a stack of two different types of conductive films. The stack includes a first conductive film that is printed ont... | 11/13/2007 |
| 7282163 | Resistor paste, resistor, and electronic device A resistor paste comprised of a first glass composition substantially not including lead, a second glass composition substantially not including lead of a composition different from the first glass composition, and a conductive material substantially not including l... | 10/16/2007 |
| 7235224 | Process for preparing fine metal oxide particles Disclosed is a process for preparing fine metal oxide particles, comprising the following steps of reacting a reactant mixture comprising i) water, ii) at least one water-soluble metal nitrate and iii) ammonia or ammonium salt at 250–700° C. under 180–550 bar f... | 06/26/2007 |
| 7153453 | Oxide sintered body, sputtering target, transparent conductive thin film and manufacturing method therefor There is provided an amorphous transparent conductive thin film with a low resistivity, a low absolute value for the internal stress of the film, and a high transmittance in the visible light range, an oxide sintered body for manufacturing the amorphous transparent ... | 12/26/2006 |
| 7138076 | Dielectric composition comprising powder of glass containing copper oxide useful for light transparent layer in PDP In a dielectric composition for use in formation of a dielectric layer in a plasma display panel, comprising glass powder, the glass powder is powder of glass which contains PbO of 50% or less and CuO as one of essential elements contained in the glass for preventin... | 11/21/2006 |
| 7138347 | Thick-film conductor paste for automotive glass A thick-film composition comprising: (a) conductive metal; (b) crystallized glass; (c) amorphous glass; and (d) organic medium. ... | 11/21/2006 |
| 7107252 | Pattern recognition utilizing a nanotechnology-based neural network A pattern recognition system, comprising a neural network formed utilizing nanotechnology and a pattern input unit, which communicates with the neural network, wherein the neural network processes data input via the pattern input unit in order to recognize data patt... | 09/12/2006 |
| 7083745 | Production method for laminate type dielectric device and electrode paste material This invention provides a method of producing a laminate type dielectric device free from peeling of an electrode layer and a ceramic layer and from voids in both electrode layer and ceramic layer, and an electrode paste material. The invention relates also to an el... | 08/01/2006 |
| 7056453 | Thermistor device, thermistor device manufacturing method and temperature sensor The thermistor portion of a thermistor device consists of a mixed sintered body of aY(Cr0.5Mn0.5)O3.bAl2O3 made of the perovskite-type compound Y(Cr0.5Mn0.5)O3 and Al2... | 06/06/2006 |
| 7039619 | Utilized nanotechnology apparatus using a neutral network, a solution and a connection gap An apparatus for maintaining components in neural network formed utilizing nanotechnology is described herein. A connection gap can be formed between two terminals. A solution comprising a melting point at approximately room temperature can be provided, wherein the ... | 05/02/2006 |
| 7015280 | Conductive emulsion for preparing surface for powder coating An emulsion for preparing a low-conductivity surface for powder coating, the emulsion including an emulsified organofunctional silane solution. A pre-powder coating emulsion provides a surface with conductivity. A non-conductive object having applied to an exterior ... | 03/21/2006 |
| 6998070 | Sputtering target and transparent conductive film A sputtering target containing a hexagonal laminar compound formed of indium oxide and zinc oxide and represented by In2O3(ZnO)m wherein m is an integer of 2 to 7 and further contains 0.01 to 1 at % of an oxide of a third element hav... | 02/14/2006 |
| 6995649 | Variable resistor apparatus formed utilizing nanotechnology A variable resistor apparatus includes a plurality of nanoparticles disposed between two terminals, wherein the plurality of nanoparticles provides an electrical resistance. An electric field applied to the plurality of nanoparticles across the two terminals results... | 02/07/2006 |
| 6884314 | Conducive, silicone-based compositions with improved initial adhesion reduced microvoiding The present invention relates generally to conductive, silicone-based compositions, with improved initial adhesion and reduced micro-voiding. More specifically, the present invention relates to a conductive, silicone-based composition, which includes a polyorganosil... | 04/26/2005 |
| 6761839 | Material for making hyper frequency multi-layer chip inductors with high performance and low sintering temperature and a process for preparing the material A composition of material used for making hfMLCIs having a sintering temperature below 1000°. The composition comprises a major component and a minor component, said major component being a general formula: Ba3Co2-x-yZnxCuy | 07/13/2004 |
| 6712997 | Composite polymers containing nanometer-sized metal particles and manufacturing method thereof The present invention relates to composite polymers containing nanometer-sized metal particles and manufacturing method thereof, which can be uniformly dispersed nanometer-sized metal particles into polymers, thereby allowing the use thereof as optically, electrical... | 03/30/2004 |