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| Number | Title | Issue Date |
| 5286978 | Method of removing electric charge accumulated on a semiconductor substrate in ion implantation A method of removing electric charges accumulated on a semiconductor substrate during ion implantation by irradiating a highly accelerated electron beam with an acceleration energy of 1 to 50 KeV into the portion of the substrate irradiated with ion beams... | 02/15/1994 |
| 5278420 | Scanning control system involved in an ion-implantation apparatus The invention provides a novel scanning control system of preventing any over-scanning involved in an ion-implantation apparatus accomplishing an electrostatic X-scanning and a mechanical Y-scanning. The system includes a liner detecting arrangement for d... | 01/11/1994 |
| 5270552 | Method for separating specimen and method for analyzing the specimen separated by the specimen separating method When a desired portion is separated from an integrated circuit chip or a semiconductor wafer, the portion is separated without dividing the chip or the wafer, so that the separated specimen can be moved to a desired position, and the separated specimen ca... | 12/14/1993 |
| 5256854 | Tunable plasma method and apparatus using radio frequency heating and electron beam irradiation A method and apparatus for the pyrolytic destruction or synthesis of gases via a highly tunable combination of radio frequency heating and electron beam irradiation is disclosed. The method is appropriate for destroying toxic gases emanating from hazardou... | 10/26/1993 |
| 5248886 | Processing system Load lock chambers having a function of detecting positional deviation of wafers are provided in a process chamber of an ion injection apparatus, two on a carrying-in side, and two on a carrying-out side. One load lock chamber on the carrying-in side and ... | 09/28/1993 |
| 5214284 | Method and arrangement for testing and repairing an integrated circuit The invention relates to an arrangement for testing and repairing an inteted circuit in which the ion beam used for the repair simultaneously forms the corpuscular beam used for the test operation and one single beam generator is provided in order to gen... | 05/25/1993 |
| 5212425 | Ion implantation and surface processing method and apparatus A capacitor is charged to a high potential or voltage from a power source. A plasma switch, preferably a CROSSATRON modulator switch, is periodically closed and opened to discharge the capacitor into an object for implantation with ions from a plasma in a... | 05/18/1993 |
| 5188705 | Method of semiconductor device manufacture Semiconductor devices are modified and/or repaired by gas enhanced physical sputtering. A focused ion beam is scanned over an area to be removed while iodine vapor is directed toward the same area. The iodine vapor, which is focused by heating solid iodin... | 02/23/1993 |
| 5185273 | Method for measuring ions implanted into a semiconductor substrate A method is provided for correlating ion implantation from a silicon wafer (13) to a gallium arsenide wafer. A first dose of a predetermined amount of silicon ions is implanted into a silicon wafer (13). The first dose of the implanted silicon ions in the... | 02/09/1993 |
| 5165954 | Method for repairing semiconductor masks & reticles Apparatus and method for repairing semiconductor masks and reticles is disclosed, utilizing a focused ion beam system capable of delivering, from a single ion beam column, several different species of focused ion beams, each of which is individually optim... | 11/24/1992 |
| 5126165 | Laser deposition method and apparatus For forming a metal film of a desired property on a substrate, a target and the substrate are placed in a pressure-reducing chamber, and then pulse laser is irradiated to the target. This causes the component materials, such as ions, electrons, neutral at... | 06/30/1992 |
| 5120925 | Methods for device transplantation A method for device transplantation includes the conveyance of a microminiature device, which has been premanufactured, to a desired place located on a sample, observation and fabrication of the new device with a focused beam, and repair of passive elemen... | 06/09/1992 |
| 5082685 | Method of conducting plasma treatment A treatment, typically plasma treatment apparatus comprises a plasma creating chamber adapted to create a plasma therein, a treating chamber in communication with the plasma creating chamber through an electrode for drawing electron beams from the plasma,... | 01/21/1992 |
| 4937205 | Plasma doping process and apparatus therefor In a plasma doping process utilizing a radio frequency discharging in a vacuum by for doping an impurity into a semiconductor substrate, the radio frequency discharging is made intermittently and under controlling of average current of the discharging, th... | 06/26/1990 |
| 4933650 | Microwave plasma production apparatus A microwave plasma production apparatus of the present invention comprises: a circular coaxial wave guide having a cylindrical outer conductor to inject a microwave power from one end and an inner conductor; a metal end plate in which at the other end of ... | 06/12/1990 |
| 4911814 | Thin film forming apparatus and ion source utilizing sputtering with microwave plasma A thin film forming apparatus comprises a plasma generating chamber into which is introduced a gas to generate plasma therein; a microwave introduction window connected to the plasma generating chamber for introducing the microwave into the latter, a firs... | 03/27/1990 |
| 4912065 | Plasma doping method Disclosed is a plasma doping method capable of introducing a large quantity of impurities into a substrate at a relatively low temperature (200° to 600° C.). In the LSI fabrication process represented by Si process, it is necessary to introduce impuriti... | 03/27/1990 |
| 4897282 | Thin film coating process using an inductively coupled plasma Thin coatings of normally solid materials are applied to target substrates using an inductively coupled plasma. Particles of the coating material are vaporized by plasma heating, and pass through an orifice to a first vacuum zone in which the particles ar... | 01/30/1990 |
| 4800100 | Combined ion and molecular beam apparatus and method for depositing materials A method and apparatus is described for combined deposition of thin films of materials from an ion beam source and a molecular beam source in a single reactor.... | 01/24/1989 |
| 4670064 | Generating high purity ions by non-thermal excimer laser processing A semiconductor ion implantation processing technique is disclosed for implanting high purity, high flux density ions in a semiconductor wafer substrate. A reactant gas is irradiated with excimer pulsed ultraviolet laser radiation at a discrete designated... | 06/02/1987 |
| 4667111 | Accelerator for ion implantation A radio frequency (rf) ion accelerator. A beam of ions enters the accelerator with a low initial velocity. Ions are accelerated to energies on the order of 1 mev per charge state for use in deep ion implantation of semiconductor materials. The accelerator... | 05/19/1987 |
| 4559096 | Method of precisely modifying predetermined surface layers of a workpiece by cluster ion impact therewith A method of precisely modifying a selected area of a workpiece by producing a beam of charged cluster ions that is narrowly mass selected to a predetermined mean size of cluster ions within a range of 25 to 106 atoms per cluster ion, and accele... | 12/17/1985 |
| 4450031 | Ion shower apparatus An ion shower apparatus comprising a plasma formation chamber in which plasma is produced so as to produce ions, a single ion extraction grid disposed in one portion of the plasma formation chamber and for extracting the ions from the plasma formation cha... | 05/22/1984 |
| 4434036 | Method and apparatus for doping semiconductor material Method for doping semiconductor material, including a container into which doping material is led and aimed at the semiconductor material by means of an electrical field, which includes maintaining the doping material in a plasma in the container, and lea... | 02/28/1984 |
| 4213844 | Ion plating apparatus An ion plating apparatus having a plurality of vapor sources for supplying the vapors of evaporating materials, the particles of the vapors being ionized and accelerated by an electric field to impinge on the surface of a substrate so as to form a film of... | 07/22/1980 |
| 3993509 | Semiconductor device manufacture A semiconductor wafer is electrostatically clamped against a support by positioning an intermediate solid dielectric layer therebetween and applying a potential difference, thereby firmly and evenly clamping the wafer for photoresist or ion beam implantat... | 11/23/1976 |
