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...that Thomas Edison's patent application on his phonograph was approved by the Patent Office in just seven weeks? In contrast, it took Gordon Gould, the inventor of the laser, 30 years to obtain his patent -- finally awarded in 1988!
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| Number | Title | Issue Date |
| 7772573 | Ion implanting apparatus and method of correcting beam orbit An extraction electrode of an ion source is dividedly configured by a first extraction electrode and a second extraction electrode. DC power supplies which form a potential difference between the electrodes, a camera which takes an image of the ion beam to output im... | 08/10/2010 |
| 7772572 | Apparatus for producing secondary electrons, a secondary electrode, and an acceleration electrode An apparatus includes a primary electrode and an acceleration electrode. The acceleration electrode or, alternatively, an additional secondary electrode contains a slot that extends obliquely through the acceleration electrode or through the secondary electrode. Thi... | 08/10/2010 |
| 7772571 | Implant beam utilization in an ion implanter To select a scan distance to be used in scanning a wafer with an implant beam, a dose distribution along a first direction is calculated based on size or intensity of the implant beam and a scan distance. The scan distance is the distance measured in the first direc... | 08/10/2010 |
| 7767986 | Method and apparatus for controlling beam current uniformity in an ion implanter An electrode assembly for use with an ion source chamber or as part of an ion implanter processing system to provide a uniform ion beam profile. The electrode assembly includes an electrode having an extraction slot with length L aligned with an aperture of the ion ... | 08/03/2010 |
| 7759657 | Methods for implanting B22Hx and its ionized lower mass byproducts Methods for implanting an ionized polyhedral borane cluster or a selected ionized lower mass byproduct into a workpiece generally includes vaporizing and ionizing a polyhedral borane cluster molecule in an ion source to create a plasma and produce ionized polyhedral... | 07/20/2010 |
| 7759658 | Ion implanting apparatus An ion implanting apparatus is provided. The ion implanting apparatus includes a beam scanner, a beam collimator and a unipotential lens which is disposed between said beam scanner and said beam collimator, and which includes first, second, third, and fourth electro... | 07/20/2010 |
| 7755065 | Focused ion beam apparatus A focused ion beam apparatus includes a plasma generator having a plasma torch therein, which lets plasma flow out while being kept inside, a differential exhaust chamber that is connected to the plasma torch via the torch orifice to cause adiabatic expansion of the... | 07/13/2010 |
| 7755066 | Techniques for improved uniformity tuning in an ion implanter system Techniques for uniformity tuning in an ion implanter system are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for ion beam uniformity tuning. The method may comprise generating an ion beam in an ion implanter system. T... | 07/13/2010 |
| 7755067 | Ion implantation apparatus and method of converging/shaping ion beam used therefor An ion implantation apparatus reciprocally scans an ion beam extracted from an ion source and passed through a mass analysis magnet apparatus and a mass analysis slit and irradiates to a wafer. The ion beam is converged and shaped by providing a first quadrupole ver... | 07/13/2010 |
| 7750321 | Positioning device for positioning an aperture plate in an ion beam A positioning device for positioning an aperture plate in an ion beam of an ion implantation system has two fixture parts that can be moved relative to each other by means of at least one positioning drive, of which the one fixture part can be connected or is connec... | 07/06/2010 |
| 7750320 | System and method for two-dimensional beam scan across a workpiece of an ion implanter A workpiece or semiconductor wafer is tilted as a ribbon beam is swept up and/or down the workpiece. In so doing, the implant angle or the angle of the ion beam relative to the workpiece remains substantially constant across the wafer. This allows devices to be form... | 07/06/2010 |
| 7750322 | Ion implanter for photovoltaic cell fabrication Ion implanters are especially suited to meet process dose and energy demands associated with fabricating photovoltaic devices by ion implantation followed by cleaving. ... | 07/06/2010 |
| 7750323 | Ion implanter and method for implanting a wafer An ion implanter and a method for implanting a wafer are provided, wherein the method includes the following steps. First, a wafer has at least a first portion requiring a first doping density and a second portion requiring a second doping density is provided. The f... | 07/06/2010 |
| 7745803 | Ion doping apparatus, ion doping method, semiconductor device and method of fabricating semiconductor device An ion doping apparatus includes: a chamber 11; a discharge section 13 for discharging a gaseous content from within the chamber 11; an ion source 12 being provided in the chamber 11 and including an inlet 14 through which t... | 06/29/2010 |
| 7745804 | Ion implantation method and application thereof An ion implantation method for achieving angular uniformity throughout a workpiece and application thereof are provided. The ion beam has at least one beamlet striking the workpiece surface with corresponding incident angles. The workpiece is mapped to an imaginary ... | 06/29/2010 |
| 7741621 | Apparatus and method for focused electric field enhanced plasma-based ion implantation There is disclosed an apparatus and method for focused electric field enhanced plasma-based ion implantation. The apparatus includes an implantation chamber, a vacuum pump for maintaining the pressure in the implantation chamber at a desired level, a sample holder, ... | 06/22/2010 |
| 7732790 | Ion implanting apparatus for forming ion beam geometry An ion implanting apparatus is provided, which prevents a failure of the processing object caused by a scattering of the deposited particles of the ion species on an inner surface of a through hole of a member that forms a beam geometry of an ion beam. Since at leas... | 06/08/2010 |
| 7728312 | Apparatus and method for partial ion implantation An apparatus and method for partial ion implantation, which desirably provide control over the energy of the implanted dopants, generally includes an ion beam generator, and first and second deceleration units. The first deceleration unit decelerates the energy of a... | 06/01/2010 |
| 7728311 | Charged particle radiation therapy Among other things, an accelerator is mounted on a gantry to enable the accelerator to move through a range of positions around a patient on a patient support. The accelerator is configured to produce a proton or ion beam having an energy level sufficient to reach a... | 06/01/2010 |
| 7723706 | Horizontal and vertical beam angle measurement technique A system and method of quickly determining the parameters of an ion beam are disclosed. An ion beam, having a width and height dimension, is made up of a number of individual beamlets. By using a plurality of detectors, deployed over the entire beam, it is possible ... | 05/25/2010 |
| 7723705 | Techniques for measuring ion beam emittance Techniques for measuring ion beam emittance are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for measuring ion beam emittance. The apparatus may comprise a measurement assembly comprising a first mask, a second ma... | 05/25/2010 |
| 7718980 | Beam processing system and beam processing method A beam processing system is for causing a particle beam extracted from a beam generating source to pass through a mass analysis magnet device, a mass analysis slit, and a deflection scanner in the order named, thereby irradiating the particle beam onto a processing ... | 05/18/2010 |
| 7718981 | Composite charged-particle beam system There is provided a method of arranging, as a composite charged-particle beam system, a gas ion beam apparatus, an FIB and an SEM in order to efficiently prepare a TEM sample. The composite charged-particle beam system includes an FIB lens-barrel 1, an SEM le... | 05/18/2010 |
| 7709817 | Ion beams in an ion implanter A method of tuning an ion beam in an ion implanter relative to, e.g., ion beam current, energy, size and shape, includes retrieving a set of parameters associated with operation of the ion implanter, at least some of which are stored in a dynamic database, configuri... | 05/04/2010 |
| 7705328 | Broad ribbon beam ion implanter architecture with high mass-energy capability A ribbon ion beam system, comprising an ion source configured to generate a ribbon ion beam along a first beam path, wherein the ribbon ion beam enters a mass analysis magnet having a height dimension (h1) and a long dimension (w1) that is perp... | 04/27/2010 |
| 7705329 | Charged particle beam processing apparatus In view of the fact that in line processing, when processing is performed to a certain depth, the processing does not advance with the passage of a further processing time, a processing apparatus is provided which can appropriately control the depth of grooves in li... | 04/27/2010 |
| 7700931 | Ion beam processing apparatus The present invention provides an ion beam processing technology for improving the precision in processing a section of a sample using an ion beam without making a processing time longer than a conventionally required processing time, and for shortening the time req... | 04/20/2010 |
| 7696496 | Apparatus for ion beam fabrication The apparatus for ion beam fabrication, which has been able to detect any anomalous condition of ion beams only by means of the current irradiated on the specimen, could not compensate the failure by investigating the cause and could not realize stable processing. T... | 04/13/2010 |
| RE41214 | Bi mode ion implantation with non-parallel ion beams A method for implanting ions into a workpiece, such as a semiconductor wafer, includes the steps of generating an ion beam, measuring an angle of non-parallelism of the ion beam, tilting the wafer at a first angle, performing a first implant at the first angle, tilt... | 04/13/2010 |
| 7696494 | Beam angle adjustment in ion implanters A steering component is included in an ion implantation system to direct or “steer” an ion beam to a scan vertex of a scanning component downstream of the steering component. In this manner, the scan vertex of the scanning component coincides with the focal poin... | 04/13/2010 |
| 7696495 | Method and device for adjusting a beam property in a gas cluster ion beam system A method and device for adjusting a beam property, such as a beam size, a beam shape or a beam divergence angle, in a gas cluster beam prior to ionization of the gas cluster beam is described. A gas cluster ion beam (GCIB) source is provided, comprising a nozzle ass... | 04/13/2010 |
| 7692165 | Charged particle beam device with a gas field ion source and a gas supply system The present invention provides a charged particle beam device for irradiating a specimen with ions. The charged particle beam device comprises a gas field ion source unit for generating a beam of ions, the gas field ion source having an emitter unit having an emitte... | 04/06/2010 |
| 7692164 | Dose uniformity correction technique Non uniform ion implantations in a pendulum type of ion implantation are mitigated by adjusting movement of a wafer according to a corresponding non uniform function. More particularly, a non uniform ion implantation function is obtained by measuring and/or modeling... | 04/06/2010 |
| 7687787 | Profile adjustment in plasma ion implanter A method to provide a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that surface peak dopa... | 03/30/2010 |
| 7687786 | Ion implanter for noncircular wafers Ion implanters are especially suited to meet process dose and energy demands associated with fabricating photovoltaic devices by ion implantation followed by cleaving. ... | 03/30/2010 |
| 7683348 | Sensor for ion implanter A Faraday cup structure for use with a processing tool. The cup structure has a conductive strike plate coupled to a circuit for monitoring ions striking the strike plate to obtain an indication of the ion beam current. The electrically conductive strike plate is fr... | 03/23/2010 |
| 7683347 | Technique for improving ion implantation throughput and dose uniformity A technique for improving ion implantation throughput and dose uniformity is disclosed. In one exemplary embodiment, a method for improving ion implantation throughput and dose uniformity may comprise measuring an ion beam density distribution in an ion beam. The me... | 03/23/2010 |
| 7683350 | Ion implantation method An ion implantation method is provided. The method, before ion implanting, is to rotate the substrate by an angle and shift the scan path of the ion beam with an interlace pitch in the direction perpendicular to the scan direction and on the plane of the substrate. ... | 03/23/2010 |
| 7679070 | Arc chamber for an ion implantation system An arc chamber for an ion implantation system includes an exit aperture positioned at a wall of the arc chamber, filaments respectively positioned at two opposing sides within the arc chamber, and repeller structures respectively positioned at two opposing walls wit... | 03/16/2010 |
| 7675049 | Sputtering coating of protective layer for charged particle beam processing A coating is applied to a work piece in a charged particle beam system without directing the beam to work piece. The coating is applied by sputtering, either within the charged particle beam vacuum chamber or outside the charged particle beam vacuum chamber. In one ... | 03/09/2010 |
