Did You Know...
...that after Parker Brothers executives turned down the game of Monopoly because it had "52 fundamental errors" (including taking too long to play), a copy of the game wound up in the home of the company president who stayed up until 1 a.m. to finish playing it? He was so impressed by the game that the next day he wrote to inventor Charles Darrow and offered to buy it!
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| Number | Title | Issue Date |
| 7238597 | Boron ion delivery system A boron ion plasma, generated by use of a cathodic arc, is manipulated and delivered to a large flat product such as a silicon wafer with boron ion energies suitable for incorporation of boron atoms into solid state devices as one of the key steps in manufacturing s... | 07/03/2007 |
| 7238547 | Packaging integrated circuits for accelerated detection of transient particle induced soft error rates An IC device is packaged for accelerated transient particle emission by doping the underfill thereof with a transient-particle-emitting material having a predetermined, substantially constant emission rate. The emission rate may be tunable. In one aspect, a radioact... | 07/03/2007 |
| 7239378 | Platform based imaging system A platform-based imaging system includes a nanotechnology-modified lens assembly mounted on the platform. A nanotechnology-modified information processing module is provided to receive information from the lens assembly. A nanotechnology-modified connection mechanis... | 07/03/2007 |
| 7235798 | Focused ion beam apparatus In order to implement faster high precision milling and high resolution image observation in the structure analysis and failure analysis of the MEMS and semiconductor devices, a two-lens optical system is mounted on a focused ion beam apparatus, and in the optical s... | 06/26/2007 |
| 7235797 | Method of implanting a substrate and an ion implanter for performing the method An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the... | 06/26/2007 |
| 7235795 | Semiconductor device manufacturing apparatus and a method of controlling a semiconductor device manufacturing process A particle monitor in the process chamber of a semiconductor device manufacturing apparatus provides a measure of a flux of contaminant particles in the chamber. The flux is measured whilst process conditions are produced in the process chamber and a process paramet... | 06/26/2007 |
| 7235796 | Method and apparatus for the generation of anionic and neutral particulate beams and a system using same An apparatus for the generation of anionic and neutral particulate beams is described. The apparatus comprises a duct defined by walls having an inner surface capable of sustaining a temperature above an electron emission temperature of the surface, so as to negativ... | 06/26/2007 |
| 7232744 | Method for implanting dopants within a substrate by tilting the substrate relative to the implant source The present invention provides a method for implanting a dopant in a substrate and a method for manufacturing a semiconductor device. The method for implanting a dopant, among other steps, including tilting a substrate (310) located on or over an implant plat... | 06/19/2007 |
| 7230256 | Ion doping system, ion doping method and semiconductor device An ion doping system includes a chamber 11, an exhausting section 13 for exhausting gases from the chamber, an ion source 12 provided for the chamber, and an accelerating section 23 for extracting the ions, generated in the ion source ... | 06/12/2007 |
| 7227140 | Method, system and device for microscopic examination employing fib-prepared sample grasping element A method including, in one embodiment, severing a sample at least partially from a substrate by cutting the substrate with a focused ion beam (FIB), capturing the substrate sample by activating a grasping element, and separating the captured sample from the substrat... | 06/05/2007 |
| 7227160 | Systems and methods for beam angle adjustment in ion implanters An ion implantation system employs a mass analyzer for both mass analysis and angle correction. An ion source generates an ion beam along a beam path. A mass analyzer is located downstream of the ion source that performs mass analysis and angle correction on the ion... | 06/05/2007 |
| 7227159 | Ion implantation apparatus and ion implanting method An ion implantation apparatus includes an ion irradiation unit. The ion irradiation unit irradiates a plurality of areas of a target substrate with ion beams each of which reaches the substrate at corresponding one incident angle. An incident angle measuring instrum... | 06/05/2007 |
| 7223676 | Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer A low temperature process for depositing a coating containing any of silicon, nitrogen, hydrogen or oxygen on a workpiece includes placing the workpiece in a reactor chamber facing a processing region of the chamber, introducing a process gas containing any of silic... | 05/29/2007 |
| 7223990 | Ion beam irradiation device Disclosed is an ion beam irradiation device including a holder supporting a substrate; and an ion beam source that is a predetermined distance from the substrate and inclined to be substantially parallel with the substrate and that irradiates the substrate with an i... | 05/29/2007 |
| 7220973 | Modular manipulation system for manipulating a sample under study with a microscope A modular manipulation system and method for using such modular manipulation system for manipulating a sample under study with a microscope are provided. According to at least one embodiment, a platform is provided that comprises an interface to a microscope, a samp... | 05/22/2007 |
| 7220943 | RF stand offs This invention relates to RV stand offs or breaks and in particular, but not exclusively not to stand offs which are suitable for use in plasma generating apparatus. A stand off 14 includes a resistive or insulating cylinder 15, through which gas feeds... | 05/22/2007 |
| 7220976 | Ion source and ion implanter having the same A filament includes a filament rod having an electron-emitting portion, a pair of leads, and a pair of connection portions. The electron-emitting portion is disposed in the arc chamber. The leads extend from the sidewall of the arc chamber to the outside of the arc ... | 05/22/2007 |
| 7217934 | Wafer scanning device The wafer scanning device causes a wafer to scan in a vacuum area and includes a holder 10 to hold a wafer, a ball screw 20 to move the holder 10 to scan, a motor 50 to drive the ball screw 20 and an integrally formed support frame... | 05/15/2007 |
| 7218126 | Inspection method and apparatus for circuit pattern An apparatus for measuring a sample with a circuit pattern including at least a porous low-permittivity hydrogensilsesquioxane material or a material structurally or compositionally similar to the porous low-permittivity hydrogensilsesquioxane. The apparatus include... | 05/15/2007 |
| 7214951 | Charged-particle multi-beam exposure apparatus A charged-particle multi-beam exposure apparatus (1) for exposure of a target (41) uses a plurality of beams of electrically charged particles, which propagate along parallel beam paths towards the target (41). For each particle beam an illumina... | 05/08/2007 |
| 7214614 | System for controlling metal formation processes using ion implantation The present invention is generally directed to various methods of using ion implantation techniques to control various metal formation processes. In one illustrative embodiment, the method comprises forming a metal seed layer above a patterned layer of insulating ma... | 05/08/2007 |
| 7211811 | Method for preventing wafer surface from bombardment by micro-dust particles during the ion implantation process A method for preventing wafer surface from bombardment by micro-dust particles during the ion implantation process is disclosed. The method adjusts, in mobile way, the rotation direction of the rotating disk system in association with the inclined direction of the w... | 05/01/2007 |
| 7207869 | Apparatus for supporting airfoils in a grit blasting process An apparatus provided for supporting at least one component in a grit blasting process comprises a base and a platform table assembly mounted to the base. The platform table assembly includes a platform table therein which is rotatable and angularly adjustable with ... | 04/24/2007 |
| 7208330 | Method for varying the uniformity of a dopant as it is placed in a substrate by varying the speed of the implant across the substrate The present invention provides a method for placing a dopant in a substrate and a method for manufacturing an integrated circuit. The method for placing a dopant in a substrate, among other steps, includes providing a substrate (340) and implanting a dopant w... | 04/24/2007 |
| 7207766 | Load lock chamber for large area substrate processing system A load lock chamber and method for transferring large area substrates is provided. In one embodiment, a load lock chamber suitable for transferring large area substrates includes a plurality of vertically stacked single substrate transfer chambers. The configuration... | 04/24/2007 |
| 7205560 | Method and apparatus for processing a micro sample An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any ... | 04/17/2007 |
| 7205556 | Bellows liner for an ion beam implanter An ion beam implanter includes ion beam forming and directing apparatus and an implantation station where workpieces are implanted with ions from an ion beam. The beam travels along an evacuated path from an ion source to the implantation station. A flexible bellows... | 04/17/2007 |
| 7205552 | Monatomic boron ion source and method Monotomic boron ions for ion implantation are supplied from decaborane vapour. The vapour is fed to a plasma chamber and a plasma produced in the chamber with sufficient energy density to disassociate the decaborane molecules to produce monatomic boron ions in the p... | 04/17/2007 |
| 7205554 | Method and apparatus for processing a micro sample An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any ... | 04/17/2007 |
| 7202483 | Methods and apparatus for ion beam angle measurement in two dimensions An angle measurement system for an ion beam includes a flag defining first and second features, wherein the second feature has a variable spacing from the first feature, a mechanism to translate the flag along a translation path so that the flag intercepts at least ... | 04/10/2007 |
| 7202487 | Apparatus for ion implantation Apparatus for ion implantation having an ion trap for stabilizing a beam current are disclosed. An illustrated apparatus for ion implantation includes an arc chamber to ionize an impurity to create an ion beam; an ion beam trapping device to extract the ion beam fro... | 04/10/2007 |
| 7201548 | Weight-compensating device The present invention relates to a weight compensating device comprising a carrier and a component which is supported on the carrier and is displaceable particularly in vertical direction by means of a drive, characterized in that the carrier and the component have ... | 04/10/2007 |
| 7199383 | Method for reducing particles during ion implantation A method for reducing particles during ion implantation is provided. The method involves the use of an improved Faraday flag including a beam plate having thereon a beam striking zone comprising a recessed trench pattern on which the ion beam scans to and fro. An io... | 04/03/2007 |
| 7199373 | Particle-optic electrostatic lens In a charged-particle beam exposure device, an electrostatic lens (ML) comprises several (at least three) electrodes with rotational symmetry (EFR, EM, EFN) surrounding a particle beam path; the electrodes are arranged coaxially on a common optical axis representing... | 04/03/2007 |
| 7196525 | Sample imaging Systems and methods of generating ions at atmospheric pressure are presented. These systems and methods include spatially dependent analysis of a sample using an effusive ionization source. Systems and methods of isolating samples at atmospheric pressure are present... | 03/27/2007 |
| 7193227 | Ion beam therapy system and its couch positioning method A therapy system using an ion beam, which can shorten the time required for positioning a couch (patient). The therapy system using the ion beam comprises a rotating gantry provided with an ion beam delivery unit including an X-ray tube. An X-ray detecting device ha... | 03/20/2007 |
| 7193682 | Exposure apparatus and device manufacturing method An exposure apparatus for exposing a substrate. The apparatus includes an optical system being set at a reference temperature, for directing light to the substrate, an exposure chamber for storing the optical system in a vacuum ambience, and a load-lock chamber, dis... | 03/20/2007 |
| 7192789 | Method for monitoring an ion implanter A method for monitoring an ion implanter is disclosed. In one embodiment, the method comprises providing a wafer, forming a barrier layer on the surface of the wafer wherein the barrier layer has a substantial blocking effect on ion implantation, performing an ion i... | 03/20/2007 |
| 7189982 | Focused ion beam apparatus and aperture In an aperture for use in an ion beam optical system having its surface coated with a liquid metal, instability of an ion source attributable to sputtering and re-deposition of an aperture base material is prevented. A focused ion beam apparatus using a liquid metal... | 03/13/2007 |
| 7189980 | Methods and systems for optimizing ion implantation uniformity control An apparatus and method are provided for optimizing ion implantation uniformity in a workpiece, such as a semiconductor wafer, which includes an ion beam generator for generating an ion beam, a beam scanning mechanism for diverging the ion beam and generating substa... | 03/13/2007 |
