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| Number | Title | Issue Date |
| 8188448 | Temperature controlled ion source An ion source is provided that utilizes the same dopant gas supplied to the chamber to generate the desired process plasma to also provide temperature control of the chamber walls during high throughput operations. The ion source includes a chamber having a wall tha... | 05/29/2012 |
| 8168960 | Method for the production of a sample for electron microscopy A probe (1) for electron microscopy is cut from a solid material. A sample surface (3) is configured on the same, which is treated with an ion beam (J) at a predetermined angle of incidence such that the material is ablated from the sample surface (... | 05/01/2012 |
| 8153995 | Ion implanting apparatus An illuminating device includes: a light source which is disposed outside a vacuum chamber; a light guide which guides the light emitted from the light source, into the vacuum chamber; a light projecting portion which is fixed in the vacuum chamber, and which emits ... | 04/10/2012 |
| 8143604 | Insulator system for a terminal structure of an ion implantation system An ion implantation system includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulator system. The insulator system is configured to electrically ins... | 03/27/2012 |
| 8124947 | Ion implanter having combined hybrid and double mechanical scan architecture A system and method are provided for implanting ions into a workpiece in a plurality of operating ranges. A desired dosage of ions is provided, and a spot ion beam is formed from an ion source and mass analyzed by a mass analyzer. Ions are implanted into the workpie... | 02/28/2012 |
| 8124946 | Post-decel magnetic energy filter for ion implantation systems A system and method for magnetically filtering an ion beam during an ion implantation into a workpiece is provided, wherein ions are emitted from an ion source and accelerated the ions away from the ion source to form an ion beam. The ion beam is mass analyzed by a ... | 02/28/2012 |
| 8115184 | Gas field ion source, charged particle microscope, and apparatus A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in v... | 02/14/2012 |
| 8110820 | Ion beam apparatus and method for ion implantation A multipurpose ion implanter beam line configuration constructed for enabling implantation of common monatomic dopant ion species and cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnet... | 02/07/2012 |
| 8101925 | Installation and method of nanofabrication Nanofabrication installation comprising: a specimen holder, for holding a specimen; a mask, having a through-opening between the upper and lower faces of the mask, for letting charged particles through onto the specimen holder; a near-field detection device for dete... | 01/24/2012 |
| 8101927 | Masking apparatus for an ion implanter A masking apparatus includes a mask positioned upstream of a target positioned for treatment with ions. The mask is sized relative to the target to cause a first half of the target to be treated with a selective treatment of ions through the mask and a second half o... | 01/24/2012 |
| 8097866 | Apparatus for measuring beam characteristics and a method thereof An apparatus and a method for detecting particle beam characteristics are disclosed. In one embodiment, the apparatus may have a body including a first end and second end and at least one detector between the first and second ends. The apparatus may have a transpare... | 01/17/2012 |
| 8093567 | Method and system for counting secondary particles An apparatus for visualizing an ion beam editing operation of a sample. The apparatus comprises a charged particle beam column for producing an charged particle beam and for directing the charged particle beam onto the sample and beam rastering electronics (BRE) for... | 01/10/2012 |
| 8080814 | Method for improving implant uniformity during photoresist outgassing A method and apparatus is provided for improving implant uniformity of an ion beam experiencing pressure increase along the beam line. The method comprises generating a main scan waveform that moves an ion beam at a substantially constant velocity across a workpiece... | 12/20/2011 |
| 8080813 | Ion implanter, internal structure of ion implanter and method of forming a coating layer in the ion implanter An ion implanter includes a process chamber and a coating layer. The process chamber receives a substrate and provides a space to perform an ion implantation process on the substrate. The coating layer is disposed on an inner wall of the process chamber to reduce co... | 12/20/2011 |
| 8071964 | System and method of performing uniform dose implantation under adverse conditions An ion implantation system and associated method includes a scanner configured to scan a pencil shaped ion beam into a ribbon shaped ion beam, and a beam bending element configured to receive the ribbon shaped ion beam having a first direction, and bend the ribbon s... | 12/06/2011 |
| 8063389 | Method of performing ion implantation A method of performing an ion implantation is provided. A workpiece is installed in the ion implanter. A wafer is provided in a receiving space within an ion implanter. An ion beam is generated by an ion source of the ion implanter. The bombard of the ion beam is bl... | 11/22/2011 |
| 8058631 | Semiconductor manufacturing apparatus A semiconductor manufacturing includes: an ion source and a beam line for introducing an ion beam into a target film which is formed over a wafer with an insulating film interposed therebetween; a flood gun for supplying the target film with electrons for neutralizi... | 11/15/2011 |
| 8053747 | Substrate processing apparatus and cleaning method of the same A method for cleaning a substrate processing apparatus in which a first ion beam generator and a second ion beam generator are arranged opposite to each other to sandwich a plane on which a substrate is to be placed, and which processes two surfaces of the substrate... | 11/08/2011 |
| 8044374 | Ion implantation apparatus A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and the wheel is formed with tensio... | 10/25/2011 |
| 8044375 | Apparatus and method for ion beam implantation using scanning and spot beams An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for forming a converging beam on AMU-non-dispersive plane therefrom. The ion implantation apparatus includes magnet... | 10/25/2011 |
| 8039821 | Ion implantation systems An ion implantation apparatus of high energy is disclosed in this invention. The new and improved system can have a wide range of ion beam energy at high beam transmission rates and flexible operation modes for different ion species. This high energy implantation sy... | 10/18/2011 |
| 8017922 | Ion implantation method and apparatus An ion implantation method includes scanning reciprocatingly an ion beam in an X direction by an electric field or magnetic field and mechanically driving reciprocatingly a substrate in a Y direction orthogonal to the X direction to implant ions over the entire surf... | 09/13/2011 |
| 8008637 | High-temperature ion implantation apparatus and methods of fabricating semiconductor devices using high-temperature ion implantation A semiconductor device fabrication apparatus includes a load lock chamber, a loading assembly in the load lock chamber, and an ion implantation target chamber that is hermetically connected to the load lock chamber. The load lock chamber is configured to store a plu... | 08/30/2011 |
| 8008635 | Method for sample preparation Method and system for preparing samples for use in electron microscopy. The method and system use a focused ion beam (FIB) instrument and a scanning electron microscope to improve the time efficiency of the FIB instrument. The FIB instrument incorporates machining m... | 08/30/2011 |
| 8008638 | Ion implantation apparatus and ion implantation method This ion implantation apparatus is provided with a holding devise which holds the wafer, and which turns it along its circumference. In addition to holding the wafer at a prescribed position, the ion implantation apparatus subjects the wafer to ion implantation in r... | 08/30/2011 |
| 8008636 | Ion implantation with diminished scanning field effects Ion implantation systems and scanning systems are provided, in which a focus adjustment component is provided to adjust a focal property of an ion beam to diminish zero field effects of the scanner upon the ion beam. The focal property may be adjusted in order to im... | 08/30/2011 |
| 8003959 | Ion source cleaning end point detection In an ion implanter, a Faraday cup is utilized to receive an ion beam generated during ion source cleaning. The detected beam has an associated mass spectrum which indicates when the ion source cleaning process is complete. The mass spectrum results in a signal comp... | 08/23/2011 |
| 8003956 | Method and apparatus for controlling beam current uniformity in an ion implanter An ion implantation system for neutralizing the space charge effect associated with a high current low energy ion beam. The implantation system includes an ion source configured to receive a dopant gas and generate ions having a particular energy and mass from which... | 08/23/2011 |
| 8003957 | Ethane implantation with a dilution gas To implant a carbon-containing species, a gas containing carbon is ionized in the ion chamber. The ionization of this gas will typically produce a number of ionized species. However, many of these resulting ionized species are not beneficial to the desired implant, ... | 08/23/2011 |
| 8003958 | Apparatus and method for doping There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is f... | 08/23/2011 |
| 7999239 | Techniques for reducing an electrical stress in an acceleration/deceleraion system Techniques for reducing an electrical stress in a acceleration/deceleration system are disclosed. In one particular exemplary embodiment, the techniques may be realized as an acceleration/deceleration system. The acceleration/deceleration system may comprise an acce... | 08/16/2011 |
| 7999240 | Method and apparatus for specimen fabrication A system for analyzing a semiconductor device, including: a first ion beam apparatus including: a sample stage to mount a sample substrate; a vacuum chamber in which the sample stage is placed; an ion beam irradiating optical system to irradiate the sample substrate... | 08/16/2011 |
| 7994488 | Low contamination, low energy beamline architecture for high current ion implantation An ion implantation system comprising an ion source that generates an ion beam along a beam path, a mass analyzer component downstream of the ion source that performs mass analysis and angle correction on the ion beam, a resolving aperture electrode comprising at le... | 08/09/2011 |
| 7989784 | Ion implantation apparatus and a method A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions ... | 08/02/2011 |
| 7982195 | Controlled dose ion implantation An ion implanter for creating a ribbon or ribbon-like beam by having a scanning device that produces a side to side scanning of ions emitting by a source to provide a thin beam of ions moving into an implantation chamber. A workpiece support positions a workpiece wi... | 07/19/2011 |
| 7982197 | Ion implantation apparatus and a method for fluid cooling A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and the wheel is formed with tensio... | 07/19/2011 |
| 7982196 | Method for modifying a material layer using gas cluster ion beam processing A method of modifying a material layer on a substrate is described. The method comprises forming the material layer on the substrate. Thereafter, the method comprises establishing a gas cluster ion beam (GCIB) having an energy per atom ratio ranging from about 0.25 ... | 07/19/2011 |
| 7977652 | Optical heater for cryogenic ion implanter surface regeneration In an ion implanter, one or more optical heaters are disposed above a pair of support arms. The support arms have an engaged positioned which is disposed beneath a platen and a retractable position displaced vertically away from the platen and rotated away from the ... | 07/12/2011 |
| 7968857 | Apparatus and method for partial ion implantation using atom vibration A partial ion implantation apparatus and method are provided. The partial ion implantation apparatus includes an ion beam generator, a wafer chuck, and a plurality of atom-vibrating devices. The ion beam generator is configured to generate an ion beam. The wafer chu... | 06/28/2011 |
| 7960709 | Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized boron hydride molecular clusters are implanted to form P-type transistor structures. For example, in the fabrication of Complementary Metal-Oxide Semiconduc... | 06/14/2011 |
