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| Number | Title | Issue Date |
| 6646267 | Method for eliminating first, second and third-order axial image deformations during correction of the third-order spherical aberration in electron optical systems The invention relates to a method for eliminating axial image deformations n in electron optical systems, where the extra-axial image deformation of the order n+m with the same behavior in n, which thus has the form &#x... | 11/11/2003 |
| 6646261 | SEM provided with a secondary electron detector having a central electrode The invention relates to wafer inspection by means of a scanning electron microscope (SEM) column in which the secondary electron detector 22, 24 is positioned centrally above the objective lens of the column. Secondary electrons that leave the central pa... | 11/11/2003 |
| 6645823 | Reticle and method of fabricating semiconductor device A semiconductor manufacturing method employing optical lithography, using a reticle for lithographic alignment. The reticle includes a first area having a desired circuit pattern, and a second area including alignment marks arranged at specific positions,... | 11/11/2003 |
| 6646275 | Charged particle beam exposure system and method A charged particle beam exposure method includes the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the f... | 11/11/2003 |
| 6646276 | Ion implantation beam monitor As a rotating spoked substrate wheel passes across a beam stop during a scan cycle, a series of pulses are generated by the beam stop. These pulses are analysed to determine characteristics about the ion bam in an implanter. A digital signal processor (DS... | 11/11/2003 |
| 6642529 | Methods for the automated testing of reticle feature geometries A method for inspecting features on a reticle is provided. The method includes providing a layout design of a test feature and transferring the layout design of the test feature onto the reticle. After the test feature is transferred onto the reticle, an ... | 11/04/2003 |
| 6639221 | Annular illumination method for charged particle projection optics A method and apparatus for aligning a charged particle beam with an aperture includes providing a hollow beam aperture device adapted for shaping a charged particle beam into a hollow charged particle beam. Then direct the charged particle beam through th... | 10/28/2003 |
| 6639218 | Electron spin analyzer A hemisphere accelerating electrode has a double structure composed of an inner accelerating electrode and an outer accelerating electrode. The inner accelerating electrode has an inner introducing inlet and an inner opening, and the outer accelerating el... | 10/28/2003 |
| 6639225 | Six-axis positioning system having a zero-magnetic-field space The invention refers to an arrangement for positioning substrates, in particular for positioning wafers, within a device that is provided for exposure of the substrates and/or for measurement on the substrates by means of radiation under high-vacuum condi... | 10/28/2003 |
| 6635890 | Slit double gap buncher and method for improved ion bunching in an ion implantation system An ion buncher stage for a linear accelerator system is disclosed for bunching ions in an ion implantation system. The ion buncher stage may be employed upstream of one or more accelerating stages such that the loss of ions in the linear accelerator syste... | 10/21/2003 |
| 6635882 | Gantry system and method for operating same The invention relates to a gantry system for adjusting and aligning an ion beam onto a target from a freely determinable effective treatment angle. The ion beam therein is introduced in the horizontally arranged gantry rotation axis of the gantry system a... | 10/21/2003 |
| 6635881 | Charged-particle-beam projection-lens system exhibiting reduced blur and geometric distortion, and microlithography apparatus including same Charged-particle-beam (CPB) optical systems (especially projection-lens systems for use in CPB microlithography apparatus) are disclosed that exhibit excellent control of geometric aberration and the Coulomb effect while exhibiting low combined aberration... | 10/21/2003 |
| 6635873 | Scanning electron microscope with voltage applied to the sample A scanning electron microscope scans a sample using an accelerated electron beam, detects secondary electrons generated from the sample or reflected electrons or both of them, and forms images. After radiating the sample with the electron beam at a first ... | 10/21/2003 |
| 6633046 | Method and apparatus for detecting that two moveable members are correctly positioned relatively to one another The correct handover position between the gripper and the e-chuck is located using a light source and a 2-D photosensor. As the e-chuck is in the loading position it can be driven forwards or backwards in the beam direction by rotating the main whisper sc... | 10/14/2003 |
| 6627887 | System and method for constructing a profile of a structure in an integrated circuit A system and method are provided for profiling a structure in an integrated circuit to determine the structural dimensions. The system comprises a processor circuit that includes a processor electrically coupled to a local interface and a memory electrica... | 09/30/2003 |
| 6627874 | Pressure measurement using ion beam current in a mass spectrometer Method and apparatus for rapid monitoring of pressure in a chamber equipped with a mass spectrometer by using the primary beam current in conjunction with a conventional pressure gauge. The conventional gauge allows frequent calibration of the relationshi... | 09/30/2003 |
| 6627890 | Particle beam apparatus for tilted observation of a specimen A particle beam apparatus for tilted observation of a specimen is capable of producing magnification images of the specimen under tilted observation with high accuracy. The particle beam apparatus includes a source for generating a particle beam, deflecti... | 09/30/2003 |
| 6624412 | Energy filter An omega energy filter capable of increasing energy dispersion while canceling out second-order aberrations. The energy filter is mirror-symmetric with respect to the center plane C. A beam enters a first nonuniform magnetic field produced by a first magn... | 09/23/2003 |
| 6617586 | Beam delivery system A beam delivery system uses a set of electronically controlled magnets with a common magnetic yoke to steer the beam directly onto the products being irradiated with a very short distance between the magnets and the products.... | 09/09/2003 |
| 6617598 | Charged particle beam irradiation apparatus An charged particle beam irradiation apparatus is provided which increases the width in a depth direction of a Bragg peak to be formed, by means of a simple construction. The charged particle beam irradiation apparatus includes a charged particle beam gen... | 09/09/2003 |
| 6617595 | Multi-lens type electrostatic lens, electron beam exposure apparatus and charged beam applied apparatus using the lens, and device manufacturing method using these apparatuses Each of a plurality of electrostatic lens has inner walls of a plurality of lens apertures, which are formed by an electrode laid out around each beam axis, and high-resistance portions which are bonded to the electrode and are laid out on two sides of th... | 09/09/2003 |
| 6617587 | Electron optics for multi-beam electron beam lithography tool A charge particle optical column capable of being used in a high throughput, mutli-column, multi-beam electron beam lithography system is disclosed herein. The column has the following properties: purely electrostatic components; small column footprint (2... | 09/09/2003 |
| 6614033 | Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes An electrically conductive mask having openings formed is located above a semiconductor substrate and ions are implanted into the surface of the semiconductor substrate through the electrically conductive mask, thereby forming ion implanted layers. For io... | 09/02/2003 |
| 6614038 | Method for monitoring the irradiation control unit of an ion-beam therapy system The invention relates to a method of checking the calculated [sic] irradiation control unit of an ion beam therapy system which comprises a raster scanning device arranged in a beam guidance system and having vertical deflection means and horizontal defle... | 09/02/2003 |
| 6614027 | Method of controlling electrostatic lens and ion implantation apparatus The ion implantation apparatus deals with an ion beam as a charged particle beam and has an accelerating tube 8 incorporating an electrostatic lens for converging/diverging it. The control of the electrostatic lens is carried out as follows. The swept ion... | 09/02/2003 |
| 6614026 | Charged particle beam column A column for directing a beam of charged particles with a finite energy spread onto a specimen surface under an oblique beam landing angle comprises: a particle source; an objective lens; a deflection unit for deflecting the beam of charged particles away... | 09/02/2003 |
| 6610987 | Apparatus and method of ion beam processing In order to suppress quick potential change on the surface of a process target when the shutter plate is opened and closed, when an ion beam IB from the ion source 10 is irradiated on a substrate 38 and the ion beam IB is neutralized by using neutralizing... | 08/26/2003 |
| 6608316 | Ion implantation beam monitor An ion implanter, the total return current between the substrate holder and flight tube is measured. Measuring the total current returned to the flight tube provides a useful indication of the total ion current in the ion beam leaving the flight tube as w... | 08/19/2003 |
| 6603131 | Charged-particle-beam optical systems and microlithography apparatus comprising a non-absorbing shaping aperture Charged-particle-beam (CPB) optical systems, and CPB microlithography apparatus including CPB optical systems, are disclosed that include a "shaping aperture" that absorbs a very low percentage of incident charged particles and hence does not experience e... | 08/05/2003 |
| 6596999 | High performance source for electron beam projection lithography The presence of magnetic fields from lenses and other (e.g. parasitic) sources at locations in a charged particle beam system such as the charged particle emitter, where the particles have little or no kinetic energy, creates disturbances of the charged p... | 07/22/2003 |
| 6586746 | Multipole electrostatic e-beam deflector Forming poles from sectors of a tube of carbon or a material with similar conductive properties and supporting the poles by bonding an insulating support ring thereto before removing end rings formed at the ends of the tube which temporarily support the p... | 07/01/2003 |
| 6586753 | Electron beam apparatus and electron beam adjusting method An electron beam apparatus for irradiating a target with an electron beam includes a reference sample including at least one reference pattern which has a plurality of lattice structures arranged along the circumference of a circle in a evaluation surface... | 07/01/2003 |
| 6583430 | Electron beam exposure method and apparatus Some of a plurality of alignment marks formed in advance on a substrate are selected, and the positions of the selected alignment marks are detected in turn. The layout regularity of a plurality of patterns on the substrate is determined on the basis of t... | 06/24/2003 |
| 6580075 | Charged particle beam scanning type automatic inspecting apparatus A charged particle beam scanning inspecting apparatus for irradiating a charged particle beam, fetching information of a subject to be inspected at a predetermined beam scanning position and performing an inspection by processing the information. The appa... | 06/17/2003 |
| 6580072 | Method for performing failure analysis on copper metallization Described are methods of adapting FIB techniques to copper metallization, and to structures that result from the application of such techniques. A method in accordance with the invention can be used to sever copper traces without damaging adjacent materia... | 06/17/2003 |
| 6580083 | High efficiency scanning in ion implanters Ion implantation apparatus includes an ion beam generator for generating an ion beam, a scanner for scanning the ion beam across a workpiece in a first direction, a mechanical translator for translating the workpiece in a second direction so that the ion ... | 06/17/2003 |
| 6576902 | Correction method of scanning electron microscope A method of correcting a scanning electron microscope using a detection sample for producing light of an intensity corresponding to an electron density of an electron beam irradiating a surface of the detection sample. Precise correction of the scanning e... | 06/10/2003 |
| 6573501 | Holography transmission electron microscope A holography electron microscope permitting electron holography without limitations on the magnification. An electron biprism is mounted between a system of intermediate lenses and a system of projector lenses. The objective lens and the system of interme... | 06/03/2003 |
| 6570171 | Ion implanter An ion implanter comprises an ion source and a wafer support device having a rotary disk that supports a plurality of wafers thereon and is rotated about its center axis, and capable of being swung alternately in opposite directions. An ion beam emitted b... | 05/27/2003 |
| 6570155 | Bi-directional electron beam scanning apparatus The present invention relates to bi-directional raster scanning ("serpentine scanning") for an electron beam lithography system. Improved circuit components are described for generating the true triangular waveform required in bi-directional scanning. The... | 05/27/2003 |
