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| Number | Title | Issue Date |
| 7355188 | Technique for uniformity tuning in an ion implanter system A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam uniformity tuning. The method may comprise generating an ion beam in an ion implanter system. Th... | 04/08/2008 |
| 7355175 | Method and apparatus for automatically correcting charged-particle beam and method of controlling aberration corrector for charged-particle beam There is disclosed a method and apparatus for automatically correcting a charged-particle beam with an aberration corrector without the operator performing manual operations. The apparatus has an extraction portion for extracting the profile of the beam from images ... | 04/08/2008 |
| 7355174 | Charged particle beam emitting device and method for adjusting the optical axis A charged-particle beam emitting device which includes the following configuration devices so that a lowering in the image resolution will be suppressed even if a primary beam is tilted relative to a sample: A device for causing orbit of the primary beam to pass thr... | 04/08/2008 |
| 7351983 | Focused ion beam system A focused ion beam (FIB) system has an ion beam from an ion source, a condenser lens, a current-limiting aperture, an electrostatic angular aperture control lens, an electrostatic objective lens, and a controller which controls the angular aperture control lens with... | 04/01/2008 |
| 7351988 | Beam allocation apparatus and beam allocation method for medical particle accelerators The invention relates to a beam allocation apparatus (21) for medical particle accelerators and also to a beam allocation method. This beam allocation apparatus (21) should manage a plurality of control rooms (8-12) for different treatmen... | 04/01/2008 |
| 7351986 | Method and apparatus for reducing cross contamination of species during ion implantation A wafer support for an ion implanter includes a wafer holder and a support arm for the holder in the implant chamber. A portion of the support arm adjacent the wafer holder is at least intermittently exposed to the ion beam during implantation, as a result of the re... | 04/01/2008 |
| 7348567 | Apparatus for generating a plurality of beamlets The invention relates to an apparatus for generating a plurality of charged particle beamlets, comprising a charged particle source for generating a diverging charged particle beam, a converging means for refracting said diverging charged particle beam and a lens ar... | 03/25/2008 |
| 7348580 | Particle beam processing apparatus and materials treatable using the apparatus The present invention is directed to a particle beam processing apparatus that is smaller in size and operates at a higher efficiency, and also directed to an application of such apparatus to treat a coating on a substrate of a treatable material, such as for flexib... | 03/25/2008 |
| 7345436 | Apparatus and method for controlling the beam current of a charged particle beam An apparatus for producing a beam of charged particles is provided, which comprises an emitter (1, 2) and a switching device (3) adapted to switch between first, second and third beam current levels, wherein the beam current at said first current level... | 03/18/2008 |
| 7345292 | Particle beam therapy system A first manual input device for inputting an irradiation ready state is provided in each treatment room or a control room formed corresponding to the treatment room. A safety device confirms that preparations for generation of an ion beam in an accelerator are compl... | 03/18/2008 |
| 7342241 | Method and apparatus for electron-beam lithography The present invention is to provide an electron-beam lithography method and an electron-beam lithography apparatus that can draw patterns with a high precision despite a change in barometric pressure, can ensure a satisfactory throughput, and are inexpensive. In the... | 03/11/2008 |
| 7342240 | Ion beam current monitoring An ion beam monitoring system includes a charge neutralization system and a sensor. The charge neutralization system is configured to provide a compensating current to control a charge on a front surface of a wafer. The sensor is configured to sense the compensating... | 03/11/2008 |
| 7332730 | Device and method for imaging a multiple particle beam on a substrate A device and a method for imaging and positioning a multiparticle beam on a substrate is disclosed. The device comprises a particle beam source with a condenser optic that produces a particle beam that illuminates the surface of an aperture plate. A multiplicity of ... | 02/19/2008 |
| 7332729 | System and method for multiple electron, ion, and photon beam alignment A beam column array included alignment marks within to enable alignment of beams with respect to each other. Specifically, the array includes an array of beam columns, each column having at least once lens. A plurality of alignment marks are located beneath the lens... | 02/19/2008 |
| 7329878 | Method for manufacturing a lens assembly of microcolumn and lens assembly of microcolumn manufactured by the same The present invention provides a method for manufacturing a lens assembly of a microcolumn having a plurality of microlenses and a plurality of insulating layers alternately interposed between the microlenses. The method includes forming at least one first microlens... | 02/12/2008 |
| 7326941 | Apparatus and methods for ion beam implantation using ribbon and spot beams This invention discloses an ion implantation apparatus with multiple operating modes. It has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions w... | 02/05/2008 |
| 7326943 | Electron beam irradiating apparatus and irradiating method It is made possible to prevent the color aberration at the lenses from increasing and prevent the current distribution on the sample surface from changing at the time of the blanking operation. A deflector is placed between the first and second shaping apertures. A ... | 02/05/2008 |
| 7323700 | Method and system for controlling beam scanning in an ion implantation device A method and apparatus for controlling ion beam scanning in an ion implanter is disclosed. Before an implant process is commenced, a scan waveform to create a uniform distribution along a magnetic scan axis is determined, using a travelling Faraday detector (24 | 01/29/2008 |
| 7319231 | Particle beam therapy system A particle beam therapy system transports an ion beam emitted from an accelerator to one of a plurality of treatment rooms. When preparations for irradiation of the ion beam to patients in the plurality of treatment rooms are completed, irradiation ready signals are... | 01/15/2008 |
| 7315035 | Apparatus and method for doping There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion curre... | 01/01/2008 |
| 7314382 | Apparatus and methods of manufacturing and assembling microscale and nanoscale components and assemblies An apparatus including a positioner that is transitional from a first positioner orientation towards a second positioner orientation and that comprises a bistable member having a first substantially stable state corresponding to the first positioner orientation and ... | 01/01/2008 |
| 7315029 | Electrostatic deflection system with low aberrations and vertical beam incidence Embodiments of the present invention may be utilized to improve electron beam deflection. One embodiment provides an electrostatic deflection system with electrodes that minimize aberrations and to achieve vertical incidence simultaneously. By using at least two sta... | 01/01/2008 |
| 7295503 | Data storage device including nanotube electron sources A data storage device includes a phase-change storage layer and an array of nanotubes as electron sources. ... | 11/13/2007 |
| 7285788 | Ion beam extractor An ion beam extractor controls a direction and an intensity of ion beams by adjusting a voltage applied to a grid having slits formed therein, thereby enhancing uniformity of an etching rate of a wafer, leading to an increase of productivity of semiconductor diodes.... | 10/23/2007 |
| 7282725 | Method of manufacturing semiconductor device, semiconductor manufacturing apparatus, and stencil mask A manufacturing apparatus of a semiconductor device is disclosed, which comprises an implantation source which applies particles or an electromagnetic wave into an implantation region of a semiconductor substrate in a θ direction shifted by an angle θ from a verti... | 10/16/2007 |
| 7282702 | Ion neutralizer An ion neutralizer enhances a heat transfer rate between a reflecting plate and a frame while preventing the reflecting plate from being bent due to thermal deformation. The ion neutralizer includes a frame and a plurality of reflecting plates integrally formed with... | 10/16/2007 |
| 7282709 | Charged particle beam detection system A charged particle beam detection system that includes a Faraday cup detector array (FCDA) for position-sensitive charged particle beam detection is described. The FCDA is combined with an electronic multiplexing unit (MUX) that allows collecting and integrating the... | 10/16/2007 |
| 7282727 | Electron beam directed energy device and methods of using same A method and apparatus is disclosed for an electron beam directed energy device. The device consists of an electron gun with one or more electron beams. The device includes one or more accelerating plates with holes aligned for beam passage. The plates may be flat o... | 10/16/2007 |
| 7282722 | Charged particle beam apparatus and charged particle beam irradiation method A charged particle beam apparatus produces little reduction in resolution when the beam is inclined with respect to a sample. The trajectory of a primary beam 4 is deflected by a deflector or changed by a movable aperture such that the beam is incident on a p... | 10/16/2007 |
| 7276707 | Deflector, method of manufacturing deflector, and charged particle beam exposure apparatus A deflector which deflects a charged particle beam includes a substrate having an opening through which the charged particle beam should pass, and a deflection electrode which is arranged in the opening to deflect the charged particle beam and has a first conductive... | 10/02/2007 |
| 7276690 | Method and system for e-beam scanning The disclosure relates to a method and system of electron beam scanning for measurement, inspection or review. In accordance with one embodiment, the method includes a first scan on a region to collect first image data. The first image data is processed to determine... | 10/02/2007 |
| 7271399 | Manipulator assembly in ion implanter A manipulator assembly in an ion implanter comprises a ground electrode, a first suppression electrode located on a first side of the ground electrode facing an ion source device for producing ion beams, a second suppression electrode which is located on a second si... | 09/18/2007 |
| 7267520 | Wafer scanning system with reciprocating rotary motion utilizing springs and counterweights The present invention is directed to a scanning apparatus and method for processing a workpiece, wherein the scanning apparatus comprises a wafer arm and moving arm fixedly coupled to one another, wherein the wafer arm and moving arm are operable to rotate about a f... | 09/11/2007 |
| 7262424 | Particle beam therapy system A particle beam therapy system transports an ion beam emitted from an accelerator to one of a plurality of treatment rooms. For that purpose, the therapy system includes a first beam transport system connected to the accelerator, and a plurality of second beam trans... | 08/28/2007 |
| 7253423 | Technique for uniformity tuning in an ion implanter system A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for uniformity tuning in an ion implanter system. The method may comprise measuring an ion beam at a pluralit... | 08/07/2007 |
| 7247846 | Electric sector time-of-flight mass spectrometer with adjustable ion optical elements The invention provides apparatus and methods for performing time-of-flight (TOF) mass spectrometry. A TOF mass spectrometer of the present invention comprises one or more ion focusing electric sectors. At least one of the electric sectors is associated with an ion o... | 07/24/2007 |
| 7244932 | Electron beam apparatus and device fabrication method using the electron beam apparatus The purpose of the invention is to provide an improved electron beam apparatus with improvements in throughput, accuracy, etc. One of the characterizing features of the electron beam apparatus of the present invention is that it has a plurality of optical systems, e... | 07/17/2007 |
| 7245133 | Integration of photon emission microscope and focused ion beam An integrated FIB/PEM apparatus and method for performing failure analysis on integrated circuits. In-situ failure analysis is enabled by integrating Photon Emission Microscopy into a Focused Ion Beam system, thereby improving throughput and efficiency of Failure An... | 07/17/2007 |
| 7238956 | Device for controlling an apparatus generating a charged particle beam A device for adjusting a beam of charged particles. The device includes an adjustment mechanism for storing desired characteristics for the beam, determining values of adjustment parameters of the apparatus according to its characteristics, storing these values, and... | 07/03/2007 |
| 7235784 | Transmission electron microscope and image observation method using it Drift generated at the time of photographing a TEM image is corrected simultaneously with photographing, so that a TEM image free form influence of drift is photographed. While the TEM image is recorded, drift in the place out of the view field subjected to recordin... | 06/26/2007 |
