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One pet-friendly inventor patented "a device for watering pets, e.g., a dog or cat." The device, he helpfully noted, "has the general shape of a toilet."
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| Number | Title | Issue Date |
| 7373257 | Photometrically modulated delivery of reagents A process system adapted for processing of or with a material therein. The process system includes: a sampling region for the material; an infrared photometric monitor constructed and arranged to transmit infrared radiation through the sampling region and to respons... | 05/13/2008 |
| 7336322 | Image display apparatus An image display apparatus includes a second converging unit constructed so that a light flux from part of a first light source or from a separately provided second light source is converged to have a line shape, a spectroscope/deflector unit constructed so that his... | 02/26/2008 |
| 7301149 | Apparatus and method for determining a thickness of a deposited material Method and apparatus for determining a thickness of a deposited material. Energy is passed through the deposited material, wherein some of the energy is transmitted. The transmitted energy is received, and the received energy is used to determine a thickness of the ... | 11/27/2007 |
| 7291508 | Laser probe points A P-type diffusion diode is used as a probe point for an infrared laser probing system. The P-type diffusion diode probe point may be formed on a semiconductor substrate and connected to an integrated circuit thereon. The P-type diffusion diode probe point may resul... | 11/06/2007 |
| 7278315 | Laser-ultrasonic detection of subsurface defects in processed metals Subsurface defects in a processed metal are detected by a laser-ultrasonic method involving generation of a surface acoustic wave at one location on the processed metal surface, and detection of a scattered acoustic wave at another location on the processed metal su... | 10/09/2007 |
| 7244938 | Method of checking a laser processed deteriorated layer A method of checking a deteriorated layer formed in the inside of a workpiece along a dividing line by applying a laser beam capable of passing through the workpiece to the workpiece along the dividing line formed on the workpiece, the method comprising a focusing s... | 07/17/2007 |
| 7242000 | Method and apparatus for screening combinatorial libraries of semiconducting properties This invention discloses methods, materials, and devices for making and screening combinatorial libraries to identify semi-conducting and thermoelectric materials. The disclosed method includes preparing a combinatorial library of materials, and identifying library ... | 07/10/2007 |
| 7158284 | Apparatus and methods of using second harmonic generation as a non-invasive optical probe for interface properties in layered structures A method for non-invasively probing at least one interface property in a layered structure having at least one interface. In one embodiment, the method includes the steps of exposing the layered structure to an incident photon beam at an incident angle to produce a ... | 01/02/2007 |
| 7154287 | Method and apparatus for light-controlled circuit characterization Light-controlled circuit characterization techniques are disclosed. For example, a technique for testing an integrated circuit includes the following steps/operations. At least a portion of the integrated circuit is stimulated with a light source so as to affect one... | 12/26/2006 |
| 7142353 | System and method utilizing an electrooptic modulator A system and method utilize an optical element that receives an electrical field, which changes an index of refraction in at least one direction within the optical element. The change in index of refraction imparts a change to a beam of radiation passing through the... | 11/28/2006 |
| 7102132 | Process monitoring using infrared optical diagnostics A method and apparatus for real-time monitoring of the substrate and the gaseous process environment in a semi-conductor process step is described. The method uses infrared spectroscopy for in-situ analysis of gaseous molecular species in the process region and char... | 09/05/2006 |
| 7083327 | Method and apparatus for detecting kissing unbond defects A active thermographic method for detecting subsurface defects in a specimen, particularly kissing unbond defects, includes heating a specimen, applying a force to the surface of the specimen to shift and separate the walls of the defect, and obtaining thermographic... | 08/01/2006 |
| 7070325 | Hot melt adhesive detection methods and systems Hot melt adhesive sensing systems and methods including detecting (410) multiple areas of a target, for example, a hot adhesive material, by sensing changes in temperature with a corresponding number of thermal sensors, summing (420) an output of the t... | 07/04/2006 |
| 7069182 | Database interpolation method for optical measurement of diffractive microstructures A database interpolation method is used to rapidly calculate a predicted optical response characteristic of a diffractive microstructure as part of a real-time optical measurement process. The interpolated optical response is a continuous and (in a preferred embodim... | 06/27/2006 |
| 7064568 | Optical testing of integrated circuits with temperature control Method and apparatus for optically testing (e.g., using a laser beam) an operating integrated circuit (device under test—DUT) that actively control the operating temperature of the DUT. This is chiefly useful with flip-chip packaged ICs. The temperature of the DUT... | 06/20/2006 |
| 7062399 | Resistivity analysis According to an example embodiment of the present invention a semiconductor die having a resistive electrical connection is analyzed. Heat is directed to the die as the die is undergoing a state-changing operation to cause a failure due to suspect circuitry. The die... | 06/13/2006 |
| 7052174 | Device for determining changes in dimension due to temperature fluctuation An apparatus for non-destructively testing the response of a specimen to temperature change. An embodiment temperature cycles a specimen, such as a wet mortar beam, dynamically measuring change in dimension and the temperature of the specimen during the cycle. Among... | 05/30/2006 |
| 7019511 | Optical analysis of integrated circuits The invention is directed to a system and method for analyzing an integrated circuit having silicon on insulator (SOI) structure. According to one example embodiment of the present invention, an optical beam arrangement is adapted to direct a modulated beam at a sel... | 03/28/2006 |
| 6992764 | Measuring an alignment target with a single polarization state An alignment target includes periodic patterns on two elements. The periodic patterns are aligned when the two elements are properly aligned. By measuring the two periodic patterns with an incident beam having a single polarization state and detecting the intensity ... | 01/31/2006 |
| 6958480 | Sample desorption/ionization from mesoporous silica Mesoporous silica is shown to be a sample holder for laser desorption/ionization of mass spectrometry. Supported mesoporous silica was prepared by coating an ethanolic silicate solution having a removable surfactant onto a substrate to produce a self-assembled, orde... | 10/25/2005 |
| 6950780 | Database interpolation method for optical measurement of diffractive microstructures A database interpolation method is used to rapidly calculate a predicted optical response characteristic of a diffractive microstructure as part of a real-time optical measurement process. The interpolated optical response is a continuous and (in a preferred embodim... | 09/27/2005 |
| 6906327 | Method of measuring amount of chemical cure and amount of surface contamination using infrared absorbance Amount of coating cure or contamination is determined. An infrared beam is transmitted into a crystal. The beam reflects off an internal face at an angle higher than critical reflection angle to generate total reflection at the crystal face. The beam exits the cryst... | 06/14/2005 |
| 6903340 | Thin film analyzer A thin film analyzer capable of static and dynamic measurements is disclosed. The apparatus collects and analyzes spectral reflectance data as a function of time. It is especially useful for measuring the changing thickness of a transparent, organic thin film as it ... | 06/07/2005 |
| 6840666 | Methods and systems employing infrared thermography for defect detection and analysis Described are methods and systems for providing improved defect detection and analysis using infrared thermography. Test vectors heat features of a device under test to produce thermal characteristics useful in identifying defects. The test vectors are timed to enha... | 01/11/2005 |
| 6765396 | Method, apparatus and software for testing a device including both electrical and optical portions A method, device and software are disclosed which permit testing of both the optical portion and the electrical portion of an imaging device in a live bug configuration. Once an automated handler has positioned the device to be tested, the optical sensor on the imag... | 07/20/2004 |
| 6753528 | System for MEMS inspection and characterization A surface of the component in MEMS is illuminated by an illumination beam and the reflected beam is collected and detected by a position sensitive detector or photo detector array. As the surface is tilted about a pivot or about X and Y axes, the change in position ... | 06/22/2004 |
| 6636056 | Apparatus and method for testing integrated circuits A method and apparatus for testing the operability of a signal source formed on a die are described. A pair of modulators are formed on the die and coupled to the signal source. An optical unit is optically coupled to the pair of modulators, which are cap... | 10/21/2003 |
| 6576906 | Method and apparatus for screening combinatorial libraries for semiconducting properties This invention discloses methods, materials, and devices for making and screening combinatorial libraries to identify semi-conducting and thermoelectric materials. The disclosed method includes preparing a combinatorial library of materials, and identifyi... | 06/10/2003 |
| 6545279 | Surface state monitoring method and apparatus A surface state monitoring apparatus for monitoring a surface state of semiconductor substrates by infrared spectroscopy at fabrication site of semiconductor substrates. The apparatus comprises an incidence optical system for introducing infrared radiatio... | 04/08/2003 |
| 6493086 | Chamber effluent monitoring system and semiconductor processing system comprising absorption spectroscopy measurement system, and methods of use Provided is a novel chamber effluent monitoring system. The system comprises a chamber having an exhaust line connected thereto. The exhaust line includes a sample region, wherein substantially all of a chamber effluent also passes through the sample regi... | 12/10/2002 |
| 6455853 | Determination of thickness and impurity profiles in thin membranes utilizing spectorscopic data obtained from ellipsometric investigation of both front and back surfaces Disclosed is spectroscopic ellipsometer system mediated methodology for quantifying thickness and impurity profile defining parameters in mathematical models of impurity profile containing thin membranes having two substantially parallel surfaces which ar... | 09/24/2002 |
| 6452180 | Infrared inspection for determining residual films on semiconductor devices Various methods of inspecting a film on a semiconductor workpiece for a residue are provided. In one aspect, a method of inspecting a film on a semiconductor workpiece wherein the film has a known infrared signature is provided. The method includes heatin... | 09/17/2002 |
| 6433339 | Surface state monitoring method and apparatus The surface state monitoring apparatus comprises: a wafer cassette holding a plurality of semiconductor wafers; an incidence optical system for applying infrared radiation to at least one of said plurality of semiconductor wafers; a detection optical syst... | 08/13/2002 |
| 6384415 | Method of evaluating quality of silicon wafer and method of reclaiming the water A method of evaluating the quality of a silicon wafer is characterized by analyzing a silicon wafer by an infrared absorption spectrum, and then evaluating the quality of the silicon crystal based on an absorbance ratio represented by the following formul... | 05/07/2002 |
| 6252228 | Method of analyzing morphology of bulk defect and surface defect on semiconductor wafer A method of analyzing the morphology of bulk and surface defects on a semiconductor wafer includes: determining a location of the defects; marking an indication proximate the location; milling the wafer using the indication, to thereby make a specimen; an... | 06/26/2001 |
| 6242739 | Method and apparatus for non-destructive determination of film thickness and dopant concentration using fourier transform infrared spectrometry A method and apparatus for the determination of parameters of interests of a semiconductor sample is provided. For example, the thickness of an epitaxial or implanted layer, the thickness of a transition layer and the concentration of free carriers in a s... | 06/05/2001 |
| 6201603 | Position detecting apparatus for semiconductor wafer A position detecting apparatus for a semiconductor wafer includes a wafer worktable supported by an X-Y stage. The worktable is rotatable about an axis on a reference center for positioning the wafer. The apparatus also includes a photoelectric sensor arr... | 03/13/2001 |
| 6177681 | Apparatus method for testing opening state for hole in semiconductor device A testing apparatus for an opening state of a hole in a semiconductor device includes a laser light radiating system. The semiconductor device has the conductive layer and the insulating layer formed on the conductive layer, and the hole is formed in the ... | 01/23/2001 |
| 6072179 | Method and apparatus using an infrared laser based optical probe for measuring voltages directly from active regions in an integrated circuit A method and an apparatus for detecting an electric field in the active regions of an integrated circuit disposed in a semiconductor. In one embodiment, a laser beam is operated at a wavelength greater than approximately 0.9 μm. The laser beam is focused... | 06/06/2000 |
| 6011612 | Processing apparatus using a laser light source A processing apparatus having a laser light source for oscillating a pulse in response to a predetermined trigger signal and irradiating the beam emitted from the laser light source to an object to process the object comprises a position detection unit fo... | 01/04/2000 |
