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Vladimir Zworykin, television pioneer ; Talking about an invention in which he played a critical role.
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| Number | Title | Issue Date |
| 6369349 | Plasma reactor with coil antenna of interleaved conductors The invention is embodied in a coil antenna for radiating RF power supplied by an RF source into a vacuum chamber, the coil antenna including plural helical conductors each having a first end and a second end, the first ends being adapted for connection t... | 04/09/2002 |
| 6363881 | Plasma chemical vapor deposition apparatus Disclosed is a plasma chemical vapor deposition apparatus for forming an amorphous thin film, a microcrystalline thin film or a polycrystalline thin film on a surface of a target substrate by utilizing a glow discharge generated by an electric power suppl... | 04/02/2002 |
| 6359250 | RF matching network with distributed outputs An apparatus for distributing RF power outputs to a first electrode in a parallel plate electrode system for generating plasma in depositing films on a substrate. A RF power output is applied to a distributed RF matching network to excite a plasma from a ... | 03/19/2002 |
| 6355902 | Plasma film forming method and plasma film forming apparatus Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film for... | 03/12/2002 |
| 6354240 | Plasma etch reactor having a plurality of magnets A plasma etch reactor 20 includes a upper electrode 24, a lower electrode 24, a peripheral ring electrode 26 disposed therebetween. The upper electrode 24 is grounded, the peripheral electrode 26 is powered by a high frequency AC power supply, while the l... | 03/12/2002 |
| 6353201 | Discharge electrode, RF plasma generation apparatus using the same, and power supply method A plurality of electrode bars are arranged in parallel with each other, and side electrode bars are connected to the corresponding opposite ends of the electrode bars, thereby forming a ladder-like RF discharge electrode. Power supply points are arranged ... | 03/05/2002 |
| 6353206 | Plasma system with a balanced source A plasma system which is to be coupled to a power source, the plasma system including a chamber defining an internal cavity in which a plasma is generated during operation; a coil which during operation couples power from the power source into the plasma ... | 03/05/2002 |
| 6353210 | Correction of wafer temperature drift in a plasma reactor based upon continuous wafer temperature measurements using and in-situ wafer temperature optical probe The invention solves the problem of continuously monitoring wafer temperature during processing using an optical or fluoro-optical temperature sensor including an optical fiber having an end next to and facing the backside of the wafer. This optical fiber... | 03/05/2002 |
| 6348669 | RF/microwave energized plasma light source Apparatus for radiating energy at one or more predetermined wavelength comprising: a housing (4), a source of microwave energy coupled to and located outside the housing and a window forming part of the wall of the housing, the window being formed from a ... | 02/19/2002 |
| 6339206 | Apparatus and method for adjusting density distribution of a plasma An apparatus and method for adjusting a distribution of a density of a plasma and/or a distribution of a chemical composition of a plasma, thereby adjusting the characteristics of a reaction used to process a substrate. The distribution of the density and... | 01/15/2002 |
| 6337292 | Method of forming silicon oxide layer and method of manufacturing thin film transistor thereby The present method of forming a silicon oxide layer comprises providing two frequency excitation plasma CVD device which comprises a high frequency electrode, a susceptor electrode, and two matching box for impedance matching between the electrodes and a ... | 01/08/2002 |
| 6326597 | Temperature control system for process chamber Temperature control of a process chamber 25 is achieved by directing a flow of gas at an external surface 100 of the chamber 25. In one aspect, gas directed at the chamber 25 passes through a gas flow amplifier 115 that increases the gas flow. Gas for the... | 12/04/2001 |
| 6323455 | Separation of isotopes by ionisation for processing of nuclear fuel materials Processing apparatus and methods are provided which involve the selective ionization of a feed material; the separation of ionized and non-ionized species; a selective excitation of the still ionized species; introduction of a chemical material to cause s... | 11/27/2001 |
| 6323454 | Apparatus employable for ashing A method for ashing a resist pattern covered by a hardened layer caused by an ion implantation process previously conducted including a first step for conducting an ashing process at a first temperature e.g. 120° C. or less at which no popping phenomenon... | 11/27/2001 |
| 6320320 | Method and apparatus for producing uniform process rates A plasma processing apparatus for processing a substrate with a plasma is disclosed. The apparatus includes a first RF power source having a first RF frequency, and a process chamber. Further, the apparatus includes a substantially circular antenna operat... | 11/20/2001 |
| 6313428 | Apparatus and method for reducing space charge of ion beams and wafer charging An apparatus for ion beam neutralization is disclosed in this invention. The apparatus is a plasma flood source with an arc discharge chamber enclosed in a source housing with sufficient cooling so that the housing temperature is near room temperature. Ar... | 11/06/2001 |
| 6307174 | Method for high-density plasma etching A method for high-density plasma etching. A substrate is provided. A material layer is formed on the substrate. A patterned photo-resist layer is formed on the oxide layer. The material layer is patterned by the high-density plasma etching, simultaneously... | 10/23/2001 |
| 6303895 | Method and apparatus for controlling a temperature of a wafer A method and apparatus for controlling a temperature of a wafer during processing such as in a gas plasma or nonplasma environment wherein a wafer is positioned on a chuck. The wafer is heated and a pressurized gas is introduced into a space between the w... | 10/16/2001 |
| 6297468 | Inductively coupled plasma reactor with symmetrical parallel multiple coils having a common RF terminal The invention is embodied in a coil antenna for radiating RF power supplied by an RF source into a vacuum chamber of an inductively coupled plasma reactor which processes a semiconductor wafer in the vacuum chamber, the reactor having a gas supply inlet f... | 10/02/2001 |
| 6291793 | Inductively coupled plasma reactor with symmetrical parallel multiple coils having a common RF terminal The invention is embodied in a coil antenna for radiating RF power supplied by an RF source into a vacuum chamber of an inductively coupled plasma reactor which processes a semiconductor wafer in the vacuum chamber, the reactor having a gas supply inlet f... | 09/18/2001 |
| 6288357 | Ion milling planarization of semiconductor workpieces A method and apparatus is presented for planarizing or polishing workpiece surfaces using an ion beam in the presence of a radio frequency generated plasma. A workpiece is placed in a holder within a vacuum chamber equipped with a radio frequency inductiv... | 09/11/2001 |
| 6281469 | Capacitively coupled RF-plasma reactor A capacitively coupled RF plasma reactor allows treatment of large workpiece surfaces with an accurate control of ion bombardment onto the respective electrode surfaces and thus an adjacent workpiece, be it to a desired low or to a desired high level. The... | 08/28/2001 |
| 6271498 | Apparatus for vaporizing liquid raw material and method of cleaning CVD apparatus A vaporizing apparatus has a vaporizing container into which a liquid raw material is introduced and which is made of metal, a heater for heating the vaporizing container to vaporize liquid introduced into the vaporizing container and a metal nozzle (an e... | 08/07/2001 |
| 6268582 | ECR plasma CVD apparatus An ECR plasma CVD apparatus includes a cavity for producing an ECR plasma, a vacuum chamber connected to the cavity, a base plate holder for holding a base plate or substrate, an electrode plate, and a high frequency applying device for applying a high fr... | 07/31/2001 |
| 6239404 | Plasma processing apparatus Plasma processing apparatus frequently incorporates an antenna fed from a power supply and in this invention a power supply feeds a conventional matching circuit (10), which in turn is connected to the primary (11) of a transformer (12). The antenna (15) ... | 05/29/2001 |
| 6239403 | Power segmented electrode A power segmented electrode useful as part of an upper electrode and/or substrate support for supporting a substrate such as a semiconductor wafer in a plasma reaction chamber such as a single wafer etcher. The power segmented electrode includes a plurali... | 05/29/2001 |
| 6239402 | Aluminum nitride-based sintered bodies, corrosion-resistant members, metal-buried articles and semiconductor-holding apparatuses An aluminum nitride-based sintered body is disclosed, which includes aluminum nitride as a main ingredient and magnesium and has a polycrystalline structure composed of aluminum nitride crystals.... | 05/29/2001 |
| 6225592 | Method and apparatus for launching microwave energy into a plasma processing chamber A method and apparatus for launching microwave energy to a plasma processing chamber in which the required magnetic field is generated by a permanent magnet structure and the permanent magnet material effectively comprises one or more surfaces of the wave... | 05/01/2001 |
| 6222153 | Pulsed-plasma incineration method A method for the incineration of a fluid or fluidizable material by use of a pulsed plasma is disclosed. The plasma is produced by a confined discharge in a closed chamber having an exit port and containing an ablating material. The method comprises the f... | 04/24/2001 |
| 6218640 | Atmospheric pressure inductive plasma apparatus An inductive plasma torch operating at atmospheric pressure is used for wafer or glass substrate processing. Said torch employs a linear type of plasma confinement. This linear torch is particularly suitable for photoresist etching and processes in which ... | 04/17/2001 |
| 6215087 | Plasma film forming method and plasma film forming apparatus Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film for... | 04/10/2001 |
| 6201208 | Method and apparatus for plasma processing with control of ion energy distribution at the substrates In plasma processing, a bias voltage is provided from a power supply through a DC blocking capacitor to a platform on which a substrate to be treated is supported within a plasma reactor. The periodic bias voltage applied to the DC blocking capacitor has ... | 03/13/2001 |
| 6201221 | Method and apparatus for heat regulating electronics products A heating/cooling apparatus for electronic components of a wireless base station is described. The apparatus includes a heat exchanger having a material-filled chamber and a plurality of extrusions. The chamber is located adjacent to the electronic compon... | 03/13/2001 |
| 6198067 | Plasma processing device for circuit supports Many boards 7 to be processed are disposed within a metal chamber 1 in an isolated state, and many ground electrode plates 9 are disposed near by both surfaces of the boards 7 so as to be at the same potential as the chamber 1. While a microwave generated... | 03/06/2001 |
| 6191399 | System of controlling the temperature of a processing chamber A CVD processing reactor employs a pyrometer to control temperature ramping. The pyrometer is calibrated between wafer processing by using a thermocouple that senses temperature during a steady state portion of a processing operation.... | 02/20/2001 |
| 6184489 | Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles In a semiconductor device manufacturing apparatus that processing a substrate by applying a voltage to a gas to create a plasma, positively charged particles are trapped or guided at the instant that the cathode voltage is stopped, by an electrode to whic... | 02/06/2001 |
| 6184488 | Low inductance large area coil for an inductively coupled plasma source A low inductance large area coil (LILAC) is provided as a source for generating a large area plasma. The LILAC comprises at least two windings which, when connected to an RF source via impedance matching circuitry, produce a circulating flow of electrons ... | 02/06/2001 |
| 6177646 | Method and device for plasma treatment Plasma is generated in a vacuum chamber (1) by supplying high frequency power to a spiral antenna (5) from an antenna-use high frequency power source (4) and by supplying high frequency power to an electrode (6) by an electrode-use high frequency power so... | 01/23/2001 |
| 6175095 | Resonant impedance-matching slow-wave ring structure microwave applicator for plasmas A microwave applicator has exactly six equal length parallel rods equally distributed in 60° angular intervals in a circle, and at circumferential intervals that are one half the wavelength of operation of a microwave power source. The circumference is t... | 01/16/2001 |
| 6172322 | Annealing an amorphous film using microwave energy A system and method for annealing a film on a substrate in a processing chamber, including a microwave generator disposed to provide microwaves to an area within the interior of the chamber. The microwaves have a frequency such that the film is substantia... | 01/09/2001 |
