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| Number | Title | Issue Date |
| 4101411 | Plasma etching apparatus In an apparatus wherein a microwave discharge is caused by introducing a discharge gas into a discharge area to which a microwave electric field is supplied by a microwave coupler and to which an external magnetic field is supplied by a magnetic field gen... | 07/18/1978 |
| 4094722 | Etching apparatus using a plasma An etching device uses a gas activated by a plasma for etching a semiconductor element. The apparatus includes object feeding and etching chambers formed on the opposite sides of an airtight flat chamber and a support plate rotatably mounted in the flat c... | 06/13/1978 |
| 4065369 | Activated gas reaction apparatus & method An activated gas reaction apparatus which comprises an activation chamber; feeding means for conducting feed gas into the activation chamber; microwave power-generating means for activating raw gas received in the activation chamber; and a reaction chambe... | 12/27/1977 |
| 4062102 | Process for manufacturing a solar cell from a reject semiconductor wafer A process for manufacturing a solar cell from a reject semiconductor wafer comprising stripping all external layers from the wafer, etching the surfaces of the wafer so as to effectively remove all P/N junctions without pitting the wafer surface, introduc... | 12/13/1977 |
| 4039416 | Gasless ion plating A gasless ion plating process wherein plating material is melted, vaporized, and then subjected to an ionization environment in a low pressure chamber with a "virtual cathode" consisting of a plasma of ionized atoms of evaporant material created by evapor... | 08/02/1977 |
