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| Number | Title | Issue Date |
| 4491496 | Enclosure for the treatment, and particularly for the etching of substrates by the reactive plasma method Enclosure for the treatment of substrates by the reactive plasma method, consisting in a known manner of an inlet and an outlet (12) for the circulation of a reactive gas at low pressure, a base supporting the substrate (10) to be treated being placed bet... | 01/01/1985 |
| 4491499 | Optical emission end point detector A method for determining the optimum time at which a plasma etching operation should be terminated. The optical emission intensity (S1) of the plasma in a narrow band centered about a predetermined spectral line, indicative of the gas phase con... | 01/01/1985 |
| 4442338 | Plasma etching apparatus Disclosed ia a plasma etching apparatus in which an etching chamber accomodates a pair of parallel flat plate electrodes facing each other. The etching chamber is also provided with a device for applying high frequency power to one of the electrodes and a... | 04/10/1984 |
| 4438315 | High selectivity plasma etching apparatus A parallel-plate type gas plasma etching apparatus for etching a workpiece having a multilayer structure having a high etch rate ratio. A pair of parallel-plate electrodes are disposed in a reactor. A workpiece to be etched is disposed upon one of the ele... | 03/20/1984 |
| 4425496 | Removal of metal coating from dielectric material The metal coating on a dielectric sheet or strip, for instance for use in capacitors, is locally removed by a Corona discharge between the sheet and a point electrode. A current return electrode contacts the sheet and is located in the return path to a HV... | 01/10/1984 |
| 4412119 | Method for dry-etching A dry-etching method for working SiO2, phospho-silicate glass, Si, Mo, W, Cr, TiW, Si3 N4 or the like by the use of a glow discharge plasma involves the steps of introducing He, Ar, N2, O2 or a mixed ... | 10/25/1983 |
| 4396478 | Method of control of chemico-thermal treatment of workpieces in glow discharge and a device for carrying out the method A method of control of chemico-thermal treatment of workpieces in a glow discharge comprising the steps of measuring the workpiece temperature, its rate of change and frequency of arc occurrence, comparing the measured quantities with their predetermined ... | 08/02/1983 |
| 4395434 | Method for improving surface properties of shaped articles of synthetic resins The invention provides a novel and efficient method for modifying the surface properties of a shaped article of a synthetic resin such as a polyvinyl chloride resin in which a remarkable anti-static effect is obtained on the surface so that accumulation o... | 07/26/1983 |
| 4377734 | Method for forming patterns by plasma etching Ions of a metal which becomes passive under the presence of oxygen with regard to plasma etching are implanted into selected portions of the surface of a workpiece, after which the workpiece is subjected to plasma etching with a reaction gas mixed with ox... | 03/22/1983 |
| 4348577 | High selectivity plasma etching method A parallel-plate type gas plasma etching apparatus for etching a workpiece having a multilayer structure having a high etch rate ratio. A pair of parallel-plate electrodes are disposed in a reactor. A workpiece to be etched is disposed upon one of the ele... | 09/07/1982 |
| 4345968 | End point detection using gas flow Apparatus and methods for end point detection during the plasma etching of integrated circuit wafers. Etching is conducted in a chamber subjected to the vacuum of a pump drawing at a constant volumetric gas flow rate. The etchant gases entering the chambe... | 08/24/1982 |
| 4343476 | Playing piece for a board game A playing piece for a board game, such as checkers, or the like, has a base, a stem which is mounted centrally in the base and which has a portion protruding above the base and a sliding jacket that is movable between an upper position surrounding the pro... | 08/10/1982 |
| 4316791 | Device for chemical dry etching of integrated circuits Apparatus for dry chemical etching caused by ion bombardment of a substrate placed in a vacuum chamber. The substrate is in contact with an electrode, connected to a high frequency bias voltage source having one terminal connected to a ground of the chamb... | 02/23/1982 |
| 4314874 | Method for forming a fine pattern of an aluminum film A thin aluminum film 3 is formed on the top surface of a substrate 2, 1. Selected areas of the aluminum film are irradiated by an oxygen ion beam 6 to form implanted regions 7. The surface is then plasma etched, with the oxygen ion implanted regions servi... | 02/09/1982 |
| 4307283 | Plasma etching apparatus II-conical-shaped projection An improved radial flow parallel plate plasma etcher, whose more uniform etching rate of wafers is due to radially decreasing the spacing between the electrodes wherein the gap between the electrodes is greatest at the circumference and smallest at center... | 12/22/1981 |
| 4304983 | Plasma etching device and process A plasma etching device having a quartz cylinder surrounded by RF energized electrodes or coils, contains a slotted aluminum tube into which wafers for etching are supported and processed. Each of the slots of the aluminum tube is provided with a shield e... | 12/08/1981 |
| 4298443 | High capacity etching apparatus and method An apparatus for high-throughput sputter etching or reactive sputter etching of wafers comprises a multi-faceted wafer holder centrally disposed within a cylindrical chamber. A source of r-f power is capacitively coupled to the holder and the cylindrical ... | 11/03/1981 |
| 4292384 | Gaseous plasma developing and etching process employing low voltage DC generation A device for dry development of photoresists, etching of semiconductor devices, fabrication of photomasks and removal of photoresist materials is described. The device includes a reaction chamber, a means for evacuating the reaction chamber, a supply of a... | 09/29/1981 |
| 4285800 | Gas plasma reactor for circuit boards and the like Gas plasma reactor for treatment of printed circuit boards and other relatively large, generally planar objects. The reactor includes a rack assembly having a plurality of spaced apart bars for holding the objects and a pair of generally planar electrodes... | 08/25/1981 |
| 4277304 | Ion source and ion etching process An ion source suitably used for an etching process among manufacturing processes for e.g. semiconductor devices, comprising a vacuum container, an anode disposed in the vacuum container, a cathode having one or more looped slits formed opposite said anode... | 07/07/1981 |
| 4275289 | Uniformly cooled plasma etching electrode A planar electrode (17) having a plurality of concentric channels (34--34) therein through which coolant fluid passes to cool the electrode during a plasma etching process. The coolant is directed through at least two of the adjacent channels in opposite ... | 06/23/1981 |
| 4268374 | High capacity sputter-etching apparatus A high-throughput apparatus for sputter etching or reactive sputter etching of wafers comprises a large-area electrode centrally disposed within a relatively small-area cylindrical electrode. Wafers to be etched are mounted on the inside surface of the cy... | 05/19/1981 |
| 4253907 | Anisotropic plasma etching Method of anisotropically etching a semiconductor substrate (32). The substrate (32) is placed in an evacuated reaction chamber (50) and exposed to a gas plasma (63) which has been excited with an AC source having a frequency greater than 0 Hz but less th... | 03/03/1981 |
| 4243476 | Modification of etch rates by solid masking materials A method for etching materials in which a solid, located in the vicinity of the substrate, is used to provide reactive species for etching the substrate. In contrast with prior art etching techniques, an ion beam is provided which strikes a solid source l... | 01/06/1981 |
| 4138306 | Apparatus for the treatment of semiconductors Apparatus for the treatment of semiconductors comprises a reaction chamber for effecting the vapor phase reaction of semiconductor substrates, means for introducing a vapor phase reaction gas into the reaction chamber, a plasma generating section, means f... | 02/06/1979 |
| 4115184 | Method of plasma etching For plasma etching, to obtain high quality, accurate and reproducible results, the temperature of the plasma gas is measured, conveniently as close as possible to the articles to be etched, variations in the temperature from a desired datum being used to ... | 09/19/1978 |
| 3994793 | Reactive ion etching of aluminum A process for etching aluminum wherein a masked layer of aluminum, supported on a substrate, is exposed to a plasma formed by imposing an RF voltage across at least two spaced electrodes in an ambient including a gas selected from the group consisting of ... | 11/30/1976 |
