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| Number | Title | Issue Date |
| 8067711 | Deposition apparatus and methods Microspray apparatus and methods involve injecting powdered material into a plasma gas stream. The material comprises first and second component powders. The second powder is a majority by the weight of the powdered material. The first powder acts as a melting point... | 11/29/2011 |
| 8003913 | Base plate with electrodes, process for producing the same, and electro-optical device Electrodes are formed in a predetermined pattern on a base plate. Side face regions of each electrode or certain regions of each electrode, which certain regions contain the side face regions and neighboring regions, have a composition different from the composition... | 08/23/2011 |
| 7858898 | Bevel etcher with gap control A device for cleaning a bevel edge of a semiconductor substrate. The device includes a lower electrode assembly that has a top surface and is adapted to support the substrate and an upper electrode assembly that has a bottom surface opposing the top surface. The low... | 12/28/2010 |
| 7371992 | Method for non-contact cleaning of a surface A flame torch can be used to clean the surface of a contact-sensitive object, such as a glass optic, extremely thin workpiece, or semiconductor wafer by providing a reactive precursor gas to the feed gases of the torch. Reactive atom plasma processing can be used to... | 05/13/2008 |
| 7335851 | Gap measurement apparatus A detection unit (8) is disposed for detecting the magnitudes of f1 and f2 frequency components of a composite signal which is passed through a center electrode cable (4). A detecting signal generating unit (9) generates a ... | 02/26/2008 |
| 7304264 | Micro thermal chamber having proximity control temperature management for devices under test A temperature unit to control a temperature of a device under test using a fluid includes a block disposed opposite the device under test and which defines a gap therebetween and through which the fluid passes across the device under test at a gap flow rate, and an ... | 12/04/2007 |
| 7297894 | Method for multi-step temperature control of a substrate A method of changing the temperature of a substrate during processing of the substrate includes providing the substrate on a substrate holder, the substrate holder including a temperature controlled substrate support for supporting the substrate, a temperature contr... | 11/20/2007 |
| 7274004 | Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base has a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over the temp... | 09/25/2007 |
| 7271363 | Portable microwave plasma systems including a supply line for gas and microwaves Portable microwave plasma systems including supply lines for providing microwaves and gas flow are disclosed. The supply line includes at least one gas line or conduit and a microwave coaxial cable. A portable microwave plasma system includes a microwave source, a w... | 09/18/2007 |
| 7256134 | Selective etching of carbon-doped low-k dielectrics The present invention includes a process for selectively etching a low-k dielectric material formed on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a fluorine-rich fluorocarbon or hydrofluorocarbon gas, a nitrogen-c... | 08/14/2007 |
| 7238543 | Methods for marking a bare semiconductor die including applying a tape having energy-markable properties A method used for marking a semiconductor wafer or device. The method and apparatus have particular application to wafers or devices which have been subjected to a thinning process, including backgrinding in particular. The present method comprises reducing the cros... | 07/03/2007 |
| 7199327 | Method and system for arc suppression in a plasma processing system An arc suppression system for plasma processing comprising at least one sensor coupled to the plasma processing system, and a controller coupled to the at least one sensor. The controller provides at least one algorithm for determining a state of plasma in contact w... | 04/03/2007 |
| 7191618 | Large-sized substrate and method of producing the same A large-sized substrate having a diagonal length of not less than 500 mm and a ratio of flatness/diagonal length of not more than 6.0×10−6 is disclosed. By use of the large-sized substrate for exposure of the present invention, the exposure accuracy, p... | 03/20/2007 |
| 7189940 | Plasma-assisted melting Apparatus and methods for plasma-assisted melting are provided. In one embodiment, a plasma-assisted melting method can include: (1) adding a solid to a melting region, (2) forming a plasma in a cavity by subjecting a gas to electromagnetic radiation having a freque... | 03/13/2007 |
| 7176402 | Method and apparatus for processing electronic parts An electronic part processing method for peeling off a resin coating of an electronic part having a terminal section. The method includes a step of irradiating, with plasma, a coated wire having copper as a principal constituent and a surface coated with a resin. | 02/13/2007 |
| 7161111 | Plasma torch having a quick-connect retaining cup A plasma torch assembly having a quick-connect retaining cup is disclosed. The plasma torch has a torch body constructed to receive an electrode therein. A retaining cup secures the electrode to the torch body by rotating the retaining cup less than approximately 36... | 01/09/2007 |
| 7148456 | Method and apparatus for microwave phosphor synthesis A method of microwave synthesis of phosphors includes a microwave furnace having a microwave chamber; providing starting material in the microwave chamber; and subjecting the starting material to microwaves, whereby the starting material is synthesized into phosphor... | 12/12/2006 |
| 7147793 | Method of and apparatus for tailoring an etch profile An etch profile tailoring system (100), for use with an etching process carried out on a wafer (130), has a scavenging plate (170) with a baseline etch profile, and at least one etch profile tuning structure (such as a plug) (160) replace... | 12/12/2006 |
| 7141757 | Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent A plasma reactor operable over a very wide process window of pressure, source power and bias power includes a resonant circuit consisting of an overhead electrode having a first impedance, a wafer support pedestal having a second impedance and a bulk plasma having a... | 11/28/2006 |
| 7126284 | Formation of a field reversed configuration for magnetic and electrostatic confinement of plasma A system and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrostatica... | 10/24/2006 |
| 7094618 | Methods for marking a packaged semiconductor die including applying tape and subsequently marking the tape The present invention provides a method and apparatus for marking a semiconductor wafer or device. The method and apparatus have particular application to wafers or devices which have been subjected to a thinning process, including backgrinding in particular. The pr... | 08/22/2006 |
| 7094314 | Atmospheric pressure non-thermal plasma device to clean and sterilize the surfaces of probes, cannulas, pin tools, pipettes and spray heads The present invention relates to methods and apparatuses for the use of atmospheric pressure non-thermal plasma to clean and sterilize the surfaces of liquid handling devices. ... | 08/22/2006 |
| 7071442 | Plasma processing apparatus A plasma processing apparatus includes a processing container 53, a mounting table 61 arranged in the processing container 53 to support a wafer W, a sealing plate 55 opposed to the wafer W supported by the mounting table 61, an an... | 07/04/2006 |
| 7067761 | Semiconductor device manufacturing system for etching a semiconductor by plasma discharge A semiconductor device manufacturing system has a vacuum chamber which is provided with a cathode electrode for holding a substrate to be processed and into which a reactive gas for generating discharging plasma by the application of a high-frequency electric power ... | 06/27/2006 |
| 7015416 | Plasma cutting torch speed modulation A method and a system for the plasma arc cutting of a workpiece with automatic adaptation of the characteristics of the plasma jet by making various corrections, simultaneously and in real time, to several parameters, including the cut path. ... | 03/21/2006 |
| 6993919 | Processing apparatus and processing apparatus maintenance method The electrode temperature control device in a processing apparatus 100 includes a freezing circuit 110 comprising a compressor 148, a condenser 142, an expansion valve 150 and an evaporator 108 with the evaporator disposed i... | 02/07/2006 |
| 6974523 | Hollow anode plasma reactor and method The plasma processing apparatus includes a plasma chamber, a first electrode, a second electrode, and a plasma containment device. The plasma containment device has a plurality of slots and is electrically coupled to the first electrode. The containment device is co... | 12/13/2005 |
| 6960887 | Method and apparatus for tuning a plasma reactor chamber A plasma reactor or vacuum processing apparatus is provided with an orifice plate assembly. The orifice plate assembly includes an upper plate and a lower plate. Each plate is configured with through holes. The upper and lower orifice plates are independently rotata... | 11/01/2005 |
| 6943316 | Arrangement for generating an active gas jet The invention is directed to an arrangement for generating a chemically active jet (active gas jet) by a plasma generated by electric discharge in a process gas. It is the object of the invention to find a novel possibility for generating a chemically active jet by ... | 09/13/2005 |
| 6919286 | Aluminum nitride ceramics, members for use in a system for producing semiconductors, and corrosion resistant members An aluminum nitride ceramic is provided, including 0.5 to 10 weight percent of boron atoms and 0.1 to 2.5 weight percent of carbon atoms. The ceramic has a room temperature volume resistivity not lower than 1×1014Ω·cm, and a volume resistivity at 500°... | 07/19/2005 |
| 6913703 | Method of adjusting the thickness of an electrode in a plasma processing system A method of adjusting the relative thickness of an electrode assembly (10) in a plasma processing system (6) capable of supporting a plasma (20, 120) in a reactor chamber (16). The electrode assembly is arranged in the reactor chamber and... | 07/05/2005 |
| 6907742 | Apparatus and method for controlling wafer temperature An apparatus and method which is particularly suitable for maintaining a wafer at an optimum temperature for the alignment and exposure step during photolithography. The apparatus includes a cooling plate having at least one cooling channel. A coolant is continually... | 06/21/2005 |
| 6894245 | Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for su... | 05/17/2005 |
| 6870123 | Microwave applicator, plasma processing apparatus having same, and plasma processing method In order to more accurately control the radiation characteristics of microwaves to improve the controllability of processing in radial and circumferential directions of an article, there are disclosed a microwave applicator and a plasma processing apparatus using th... | 03/22/2005 |
| 6855908 | Glass substrate and leveling thereof A glass substrate having a surface which has been leveled, preferably to a flatness of 0.04-1.3 nm/cm2 of the surface, by local plasma etching is provided. A glass substrate whose surface carries microscopic peaks and valleys is leveled by measuring the h... | 02/15/2005 |
| 6847003 | Plasma processing apparatus A plasma processing apparatus includes a processing container 53, a mounting table 61 arranged in the processing container 53 to support a wafer W, a sealing plate 55 opposed to the wafer W supported by the mounting table 61, an an... | 01/25/2005 |
| 6838635 | Plasma reactor with overhead RF electrode tuned to the plasma In accordance with one aspect of the invention, a plasma reactor has a capacitive electrode driven by an RF power source, and the electrode capacitance is matched at the desired plasma density and RF source frequency to the negative capacitance of the plasma, to pro... | 01/04/2005 |
| 6806437 | Inductively coupled plasma generating apparatus incorporating double-layered coil antenna An inductively coupled plasma (ICP) generating apparatus is provided. The apparatus includes an evacuated reaction chamber; an antenna system installed at an upper portion of the reaction chamber to induce an electric field for ionizing reaction gas supplied into th... | 10/19/2004 |
| 6774335 | Plasma reactor and gas modification method This invention provides a plasma reactor for modifying gas by plasma, including a first planar electrode and a second planar electrode, the two electrodes facing opposite each other approximately in parallel; a dielectric body inserted between the first and the seco... | 08/10/2004 |
| 6770836 | Impedance matching circuit for inductively coupled plasma source An impedance matching circuit for a plasma source includes: a first network including: a first coil; and a RF power supply applying a first voltage to the first coil; and a second network including; a second coil grounded having a second voltage, the second voltage ... | 08/03/2004 |
