Cloaking System Using Optoelectronically Controlled Camouflage
A Cloaking System designed to operate in the visible light spectrum, utilizes optoelectronics and/or photonic components to conceal an object within it.
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8043521 | Processing apparatus A processing method of subjecting at least two stacked films, which comprise a first film and a second film of a target object to be processed, to a removing process by wet etching comprises bringing a first process liquid into contact with the first film of the tar... | 10/25/2011 |
| 7425357 | Surface modification of expanded ultra high molecular weight polyethylene(eUHMWPE) for improved bondability A balloon catheter and a method of making the balloon catheter, having a balloon which is bonded to an elongated shaft, and which has a first layer and a second layer and an improved bond between the balloon and the shaft. One aspect of the invention is directed to ... | 09/16/2008 |
| 7422696 | Multicomponent nanorods Multicomponent nanorods having segments with differing electronic and/or chemical properties are disclosed. The nanorods can be tailored with high precision to create controlled gaps within the nanorods or to produce diodes or resistors, based upon the identities of... | 09/09/2008 |
| 7364666 | Flexible circuits and method of making same Disclosed is a method for making flexible circuits in which portions of a tie layer are removed by etching the underlying polymer. Also disclosed are flexible circuits made by this method. ... | 04/29/2008 |
| 7358195 | Method for fabricating liquid crystal display device In etching a metal line formed as a dual layer of aluminum alloy and molybdenum, the metal line consisting of the dual layer of aluminum alloy and molybdenum is etched through one-time wet etching by applying the etchant including HNO3, HClO4, ... | 04/15/2008 |
| 7347949 | Method of manufacturing a wiring board by utilizing electro plating A method of manufacturing a wiring board by utilizing electro plating characterized in that: when a wiring pattern is formed on the board by utilizing electro plating, an unnecessary portion does not remain on the wiring pattern. The method comprises: first electrol... | 03/25/2008 |
| 7344998 | Wafer recovering method, wafer, and fabrication method In order to use an etching solution of less complicated composition for recovering used wafers, embodiments of the present invention provide a recovering method, and also provide a kind of wafer, which is used as a process control wafer or dummy wafer, and fabricati... | 03/18/2008 |
| 7309449 | Substrate processing method A substrate processing enables etching of a barrier metal film at around room temperature without application of a mechanical load and without excessive etching of a necessary portion of copper. The substrate processing flattens a copper film and a barrier metal fil... | 12/18/2007 |
| 7306744 | Method of manufacturing a nozzle plate A method of manufacturing a nozzle plate 2 is disclosed. The nozzle plate 2 has a plurality of nozzle openings 22 through each of which a droplet is adapted to be ejected. The method includes the steps of: preparing a processing substrate (silic... | 12/11/2007 |
| 7300838 | Semiconductor device and method of manufacturing semiconductor device Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an elec... | 11/27/2007 |
| 7291282 | Method of fabricating a mold for imprinting a structure The present invention provides a method of fabricating an imprint mold for molding a structure. The method includes directing a first and a second flux for forming a first material and a second material, respectively, to a substrate to form a layered structure havin... | 11/06/2007 |
| 7291283 | Combined wet etching method for stacked films and wet etching system used for same A combined wet etching method for stacked films which is capable of performing etching processes in a collective manner while controlling an amount of side-etching on each of stacked films and of making uniform side edges. In the wet etching method, two or more type... | 11/06/2007 |
| 7286367 | Printed circuit board with a built-in passive device, manufacturing method of the printed circuit board, and elemental board for the printed circuit board A multilayer printed circuit board with a built-in capacitor includes a plurality of resin films, each of which is made of thermoplastic resin and has a plurality of via-holes at predetermined positions, a plurality of conductive patterns, which are located on the r... | 10/23/2007 |
| 7267755 | Method of making a microstructure using a circuit board A method of making a microstructure includes the steps of providing a circuit board that includes a dielectric layer and a conductor layer formed on the dielectric layer, forming a metal structure on the circuit board such that the metal structure extends through th... | 09/11/2007 |
| 7261828 | Bumping process A method of forming a plurality of bumps over a wafer mainly comprises providing the wafer having a plurality of bonding pads formed thereon, forming an under bump metallurgy (UBM) layer over the bonding pads wherein the UBM layer includes an adhesive layer, for exa... | 08/28/2007 |
| 7247227 | Buffer layer in flat panel display In devices such as flat panel displays, an aluminum oxide layer is provided between an aluminum layer and an ITO layer when such materials would otherwise be in contact to protect the ITO from optical and electrical defects sustained, for instance, during anodic bon... | 07/24/2007 |
| 7247249 | Method of treating razor blade cutting edges Methods treating razors blade cutting edges having an adherent polyfluorocarbon coated thereon are described. The coated razor blade edges are treated with a solvent, which partially removes the coating from the razor blade edge. Addition of an antioxidant to the so... | 07/24/2007 |
| 7172708 | Process for the fabrication of thin-film device and thin-film device A thin-film device is fabricated by forming a protective layer and a thin-film device layer one by one on a first substrate and bonding a second substrate on the thin-film device layer via a first adhesive layer or a coating layer and first adhesive layer, removing ... | 02/06/2007 |
| 7170184 | Treatment of a ground semiconductor die to improve adhesive bonding to a substrate Methods are provided to improve the adhesive bonding of a semiconductor die to a substrate through an adhesive paste by forming a layer of silicon dioxide on the back surface of the semiconductor die prior to applying the adhesive paste. Contacting the semiconductor... | 01/30/2007 |
| 7153445 | Method for roughening copper surfaces for bonding to substrates The invention is directed to a method and composition for providing roughened copper surfaces suitable for subsequent multilayer lamination. A smooth copper surface is contacted with an adhesion promoting composition under conditions effective to provide a roughened... | 12/26/2006 |
| 7144479 | Method for increasing press fabric void volume by laser etching A method whereby a water permeable press fabric is given greater dewatering and drainage capacity by providing voids which are reservoirs of minimum pressure available to accept water. ... | 12/05/2006 |
| RE39413 | Low friction polish-stop stratum for endpointing chemical-mechanical planarization processing of semiconductor wafers The present invention is a semiconductor wafer that enhances polish-stop endpointing in chemical-mechanical planarization processes. The semiconductor wafer has a substrate with a device feature formed on the substrate, a stratum of low friction material positioned ... | 11/28/2006 |
| 7098143 | Etching method using an at least semi-solid media An etching method that uses an etch reactant retained within at least a semi-solid media (120, 220, 224, 230). The etch reactant media is applied to selectively etch a surface layer (106, 218, 222). The etch reactant media may be applied to remove meta... | 08/29/2006 |
| 7097783 | Method for inspecting a titanium-based component A process for detecting an aluminum-based material deposited onto a titanium-based gas turbine engine component during engine operation is disclosed. The process comprises immersing at least a portion of the titanium-based component, which has been subjected to engi... | 08/29/2006 |
| 7091132 | Ultrasonic assisted etch using corrosive liquids An ultrasonic etching apparatus for chemically-etching a workpiece is disclosed. The apparatus includes an outer tank at least partially filled with an aqueous solution, an inner tank at least partially disposed within the outer tank and in contact with aqueous solu... | 08/15/2006 |
| 7077918 | Stripping apparatus and method for removal of coatings on metal surfaces A coating is stripped off a work piece by applying a chromous and aluminiforous coat directly on the work piece and stripping the work piece with an alkaline solution containing a strong oxidant. A single-compartment system can be used, which includes a spray chambe... | 07/18/2006 |
| 7057810 | Microstructured screen with light absorbing material and method of manufacturing A film for a screen has a light transmitting substrate and a plurality of structures disposed on the substrate. An optical material at least partially fills cavities between the structures. A method of forming a film includes providing a light transmitting substrate... | 06/06/2006 |
| 7030033 | Method for manufacturing circuit devices Priorly, semiconductor devices wherein a flexible sheet with a conductive pattern was employed as a supporting substrate, a semiconductor element was mounted thereon, and the ensemble was molded have been developed. In this case, problems occur that a multilayer wir... | 04/18/2006 |
| 7022251 | Methods for forming a conductor on a dielectric Disclosed is a method for forming a conductor on a dielectric. The method commences with the deposition of a conductive thickfilm on the dielectric, followed by a “subsintering” of the conductive thickfilm. Either before or after the subsintering, the conductive... | 04/04/2006 |
| 7022254 | Chromate-free method for surface etching of titanium Non-chromate solutions for treating and/or etching metals, particularly, aluminum, aluminum alloys, steel and titanium, and method of applying same wherein the solutions include either a titanate or titanium dioxide as a “drop-in replacement” for a chromium-cont... | 04/04/2006 |
| 7018549 | Method of fabricating multiple nanowires of uniform length from a single catalytic nanoparticle A method is described for fabricating multiple nanowires of uniform length from a single precursor nucleation particle. The method includes growing a first nanowire segment from a nanoparticle and growing a second nanowire segment between the first nanowire segment ... | 03/28/2006 |
| 7014784 | Methods and apparatus for printing conductive thickfilms over thickfilm dielectrics In one embodiment, a plurality of thickfilm dielectric layers are printed on a substrate, with each successive layer being printed over a previous layer, and with each layer having sloped walls. After printing a first subset of the plurality of thickfilm dielectric ... | 03/21/2006 |
| 7008553 | Method for removing aluminide coating from metal substrate and turbine engine part so treated A method for selectively removing an aluminide coating from at least one surface of a metal-based substrate by: (a) contacting the surface of the substrate with at least one stripping composition comprising nitric acid at a temperature less than about 20° C. to deg... | 03/07/2006 |
| 7005078 | Micromachined fluidic device and method for making same The fluid-flow device (100) of the invention comprises a stack (30) covered by a closure wafer (20), said stack (30) comprising a support wafer (36), a layer of insulating material (34), and a silicon layer (32). The ... | 02/28/2006 |
| 6994884 | High performance fuel cell electrode and method for manufacturing same A method of fabricating a support electrode for a solid oxide fuel cell includes (a) providing a solid support electrode having an upper surface, the solid electrode comprising an electronically non-conductive material and an electronically conductive material; (b) ... | 02/07/2006 |
| 6991944 | Surface treatment for multi-layer wafers formed from layers of materials chosen from among semiconducting materials This invention relates to a process for treatment of a multi-layer wafer with materials having differential thermal characteristics, the process comprising a high temperature heat treatment step that can generate secondary defects, characterised in that this process... | 01/31/2006 |
| 6984436 | Graded material and method for synthesis thereof and method for processing thereof In homogeneous materials, etching characteristics depend on properties inherent in these materials regardless of whether they are isotropic or anisotropic, and there have been limitations in realizing various desired shapes. A subject for the invention is to provide... | 01/10/2006 |
| 6955995 | Methods of cleaning surfaces of copper-containing materials, and methods of forming openings to copper-containing substrates The invention encompasses a semiconductor processing method of cleaning a surface of a copper-containing material by exposing the surface to an acidic mixture comprising Cl−, NO3− and F−. The invention also includes ... | 10/18/2005 |
| 6949470 | Method for manufacturing circuit devices Priorly, semiconductor devices wherein a flexible sheet with a conductive pattern was employed as a supporting substrate, a semiconductor element was mounted thereon, and the ensemble was molded have been developed. In this case, problems occur that a multilayer wir... | 09/27/2005 |
| 6932916 | Semiconductor substrate with trenches of varying depth A method for etching trenches having different depths on a semiconductor substrate includes providing a mask with first and second openings. The first and second openings are located where corresponding first and second trenches are to be etched. A slow-etch region,... | 08/23/2005 |