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| Number | Title | Issue Date |
| 8168074 | Modification of polymer surface with shielded plasma Methods and systems for modifying a surface of a polymer with a shielded plasma are provided. The surface may be modified to create a surface with increased crosslinking and/or a particular mechanical property, such as a coefficient of friction. A shielding arrangem... | 05/01/2012 |
| 7914693 | Stamp for micro/nano imprint lithography using diamond-like carbon and method of fabricating the same The present invention relates to a micro/nano imprint lithography technique and in particular, to a stamp that is used in an UV-micro/nano imprint lithography process or thermal micro/nano imprint lithography process and a method for fabricating the stamp. Th... | 03/29/2011 |
| 7368393 | Chemical oxide removal of plasma damaged SiCOH low k dielectrics A method for removing damages of a dual damascene structure after plasma etching is disclosed. The method comprises the use of sublimation processes to deposit reactive material onto the damaged regions and conditions to achieve a controlled removal of the damaged r... | 05/06/2008 |
| 7173395 | Inverter unit grounding method and inverter unit A circuit system that includes a sensor circuit for a sensor that detects the state of a motor is provided in an inverter unit for driving the motor. A 0V of the circuit system is connected with a shield braid of a shielded cable that connects the sensor circuit and... | 02/06/2007 |
| RE39413 | Low friction polish-stop stratum for endpointing chemical-mechanical planarization processing of semiconductor wafers The present invention is a semiconductor wafer that enhances polish-stop endpointing in chemical-mechanical planarization processes. The semiconductor wafer has a substrate with a device feature formed on the substrate, a stratum of low friction material positioned ... | 11/28/2006 |
| 7090782 | Etch with uniformity control A method of forming semiconductor devices on a wafer is provided. An etch layer is formed over a wafer. A photoresist mask is formed over the etch layer. The photoresist mask is removed only around an outer edge of the wafer to expose the etch layer around the outer... | 08/15/2006 |
| 7064078 | Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the... | 06/20/2006 |
| 6835663 | Hardmask of amorphous carbon-hydrogen (a-C:H) layers with tunable etch resistivity A process of using a-C:H layer as a hardmask material with tunable etch resistivity in a RIE process that alleviates the addition of a layer forming gas to the etchant when making a semiconductor device, comprising: a) providing a ... | 12/28/2004 |
| 6824699 | Method of treating an insulting layer This invention relates to a method of heating an insulating layer, such as is found in semiconductor devices, in which a formation has been etched through a layer of resist comprising reactive etching the resist, inhibiting absorption of or removing water vapour and... | 11/30/2004 |
| 6805808 | Method for separating chips from diamond wafer A method for separating chips from a diamond wafer comprising a substrate, a chemically vapor-deposited diamond layer, and microelectronic elements, with the microelectronic elements protected from thermal damage and degradation caused by the thermally decomposed cu... | 10/19/2004 |
| 6774043 | Method of manufacturing semiconductor device Ions are implanted into a resist pattern for forming a wiring pattern. Argon is employed as the ion species, for performing ion implantation under 50 keV at 1×1016/cm2. Due to the ion implantation, the thickness of the resist pattern contracts... | 08/10/2004 |
| 6767475 | Chemical-organic planarization process for atomically smooth interfaces An oxygen ion process, Chemical Reactive-Ion Surface Planarization (CRISP), has been developed which enables planarization of thin film surfaces at the atomic level. Narrow/broad band filters produced with vacuum deposited multilayered thin films are designed to sel... | 07/27/2004 |
| 6736984 | Non-mechanical fabrication of carbon-containing work pieces Complex features and fine details are created in a carbon containing work piece by photolithography. A mask layer is deposited by evaporation onto the work piece. A desired pattern is created on the mask layer. The pattern is etched into the work piece and the remai... | 05/18/2004 |
| 6733597 | Method of cleaning a dual damascene structure A method is provided for cleaning a dual damascene structure. A first metal layer, a cap layer, and a dielectric layer are formed on a substrate in sequence. Then a dual damascene opening is formed in the dielectric layer and the cap layer exposing the first metal l... | 05/11/2004 |
| 6692580 | Method of cleaning a dual damascene structure A method of cleaning a dual damascene structure. A first metal layer, a cap layer, and a dielectric layer are formed on a substrate in sequence. Then a dual damascene opening is formed in the dielectric layer and the cap layer, exposing the first metal la... | 02/17/2004 |
| 6652763 | Method and apparatus for large-scale diamond polishing A method and apparatus for the polishing of diamond surfaces, wherein the diamond surface is subjected to plasma-enhanced chemical etching using an atomic oxygen polishing plasma source, are disclosed. In the apparatus, a magnetic filter passes a plume of... | 11/25/2003 |
| 6627095 | Magnetic recording disk and method of manufacturing same A magnetic recording disk having on its surface a texture structure of fine surface irregularities with reduced variations, which is suitable for high-density magnetic recording, and a method of manufacturing such a magnetic recording disk are provided. A... | 09/30/2003 |
| 6607673 | Method for manufacturing a diamond cylinder array having dents therein A cylinder array of diamond having a dent in its cylinder top face is manufactured by subjecting a cylinder array of diamond to a plasma etching.... | 08/19/2003 |
| 6547977 | Method for etching low k dielectrics The present disclosure pertains to a method for plasma etching of low k materials, particularly polymeric-based low k materials. Preferably the polymeric-based materials are organic-based materials. The method employs an etchant plasma where the major etc... | 04/15/2003 |
| 6503406 | Method for forming the air bearing surface of a slider using nonreactive plasma The invention relates to a method for producing magnetic sliders having a permanent protective coating of carbon over the air bearing surface. The method comprises the steps of: (a) depositing a temporary protective coating on a surface of the slider, the... | 01/07/2003 |
| 6492276 | Hard masking method for forming residue free oxygen containing plasma etched layer A method for forming a patterned layer within a microelectronics fabrication. There is first provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate an oxygen containing plasma etchable layer, where the... | 12/10/2002 |
| 6342428 | Method for a consistent shallow trench etch profile For use with a sub-micron semiconductor process, a trench isolation process improves the etch profile of trenches among dense and isolated lines. In an example embodiment, a process forms a dielectric stack of silicon dioxide, silicon nitride and silicon ... | 01/29/2002 |
| 6200903 | Method of manufacturing semiconductor devices A semiconductor device is manufactured by forming a thin layer over a semiconductor substrate, coating photoresist on the thin layer, forming a photoresist pattern over the semiconductor substrate, injecting ions into the photoresist pattern so as to hard... | 03/13/2001 |
| 6187213 | Marking diamond In order to produce on the table of a diamond gemstone (7), an information mark which is invisible to the naked eye using a ×10 loupe, an ultraviolet laser (1) having a wavelength of 193 nm is used in association with a mask (2) to irradiate the surface ... | 02/13/2001 |
| 6156243 | Mold and method of producing the same (1) Alignment mark transfer portion(s) is/are formed on the transfer molding surface of a mold that is used for press-molding a optical element fixing member and having alignment marks; (2) alignment mark(s) is/are formed on the mold material by dry-etchi... | 12/05/2000 |
| 6107197 | Method of removing a carbon-contaminated layer from a silicon substrate surface for subsequent selective silicon epitaxial growth thereon and apparatus for selective silicon epitaxial growth A method of removing a carbon-contaminated layer from a silicon substrate surface before a silicon epitaxial growth on the silicon substrate surface. A carbon-contaminated layer on the silicon substrate is exposed to a chlorine radical to cause a chemical... | 08/22/2000 |
| 6069084 | Method of forming a low-k layer in an Integrated circuit This is a device and method of forming such, wherein the device has an amorphous "TEFLON" (TFE AF) layer. The device comprising: a substrate; a TFE AF 44 layer on top of the substrate; and a semiconductor layer 42 on top of the TFE AF 44 layer. The device... | 05/30/2000 |
| 6027660 | Method of etching ceramics of alumina/TiC with high density plasma A method of patterning a ceramic slider by plasma etching is disclosed. The ceramic slider contains alumina and titanium carbide. The method includes the steps of forming an etch pattern by depositing and developing a photoresist on the ceramic slider, an... | 02/22/2000 |
| 6022485 | Method for controlled removal of material from a solid surface A catalytic method and an apparatus for selectively removing material from a solid substrate is provided. The method comprises contacting a surface of a solid substrate with a catalyst material in the presence of a reactant under conditions effective to s... | 02/08/2000 |
| 6013191 | Method of polishing CVD diamond films by oxygen plasma A method for polishing the surface of a diamond film with a low power density plasma in a reactor which comprises disposing O2 gas and a fluorinated gas such as SF6, NF3, and C2 F6 in the reactor, pro... | 01/11/2000 |
| 6007730 | Method of manufacturing diamond heat sink A diamond polycrystal body having metal films on its upper and lower surfaces is cut in the vertical direction using a laser to form a diamond polycrystal body piece having upper and lower surfaces and a cut surface connecting the upper and lower surfaces... | 12/28/1999 |
| 6007733 | Hard masking method for forming oxygen containing plasma etchable layer A method for forming a patterned layer within a microelectronics fabrication. There is first provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate an oxygen containing plasma etchable layer, where the... | 12/28/1999 |
| 6007732 | Reduction of reflection by amorphous carbon A pattern forming method having a step of forming an amorphous carbon film on a patterning layer formed on a substrate, a step of forming a photoresist film on the amorphous carbon film, a step of selectively exposing and developing the photoresist film t... | 12/28/1999 |
| 5993680 | Method of removing hard carbon film formed on inner circumferential surface of guide bush The present invention provides a method of removing a hard carbon film (15) from the inner surface of a guide bush (11) through etching. The method comprises the steps of inserting an auxiliary electrode (71) in the center bore (11j) of the guide bush (11... | 11/30/1999 |
| 5985163 | Partially etched protective overcoat for a disk drive slider For use in a disk drive, a head comprising a slider having a bottom air bearing surface, a leading edge and a trailing edge; a magnetic transducer mounted by the slider at the trailing edge of the slider; and a protective overcoat adhered to the air beari... | 11/16/1999 |
| 5824603 | Method of forming a low-K layer in an integrated circuit This is a device and method of forming such, wherein the device has an amorphous "TEFLON" (TFE AF) layer. The device comprising: a substrate; a TFE AF 44 layer on top of the substrate; and a semiconductor layer 42 on top of the TFE AF 44 layer. The device... | 10/20/1998 |
| 5814238 | Method for dry etching of transition metals A method for dry etching of transition metals. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorous-containing π-acceptor ligand in prox... | 09/29/1998 |
| 5690838 | Magnetic recording medium and process for producing same A magnetic recording medium excellent in corrosion resistance and rubbing reliability is realized by forming a number of concavities and convexities on the surface of a protective layer formed on a substrate and applying dry etching with a noble gas after... | 11/25/1997 |
| 5679269 | Diamond-like carbon for use in VLSI and ULSI interconnect systems The present invention relates to semiconductor devices comprising as one of their structural components diamond-like carbon as an insulator for spacing apart one or more levels of a conductor on an integrated circuit chip. The present invention also relat... | 10/21/1997 |
| 5674355 | Diamond-like carbon for use in VLSI and ULSI interconnect systems The present invention relates to semiconductor devices comprising as one of their structural components diamond-like carbon as an insulator for spacing apart one or more levels of a conductor on an integrated circuit chip. The present invention also relat... | 10/07/1997 |
