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| Number | Title | Issue Date |
| 8153016 | Shaping a cover glass The fabrication of a touch sensor panel having co-planar single-layer touch sensors fabricated on the back side of a cover glass is disclosed. It can be desirable from a manufacturing perspective to perform all thin-film processing steps on a motherglass before sepa... | 04/10/2012 |
| 8070973 | Ridge and mesa optical waveguides Apparatus including: a substrate layer having a substantially planar top surface; an optically conductive peak located and elongated on, and spanning a first thickness measured in a direction generally away from, the top surface; the optically conductive peak having... | 12/06/2011 |
| 7988875 | Differential etch rate control of layers deposited by chemical vapor deposition A method and apparatus is provided for controlling the etch profile of a multilayer layer stack by depositing a first and second material layer with differential etch rates in the same or different processing chamber. In one embodiment of the invention, a process fo... | 08/02/2011 |
| 7531104 | Micro-optic elements and method for making the same A method of making micro-optic elements. In one embodiment, photo-resist elements each having predetermined dimensions are transferred onto a substrate. The photo-resist elements are exposed to a reflow process to shape the top surface of the elements into a curved ... | 05/12/2009 |
| 7427359 | Self-filling wet electrochemical cells by laser processing A method of preparing high capacity hydrous ruthenium oxide micro-ultracapacitors. A laser direct-write process deposits a film of hydrous ruthenium oxide in sulfuric acid under ambient temperature and atmospheric conditions. A dual laser process combining infrared ... | 09/23/2008 |
| 7425277 | Method for hard mask CD trim Broadly speaking, methods and an apparatus are provided for removing an inorganic material from a substrate. More specifically, the methods provide for removing the inorganic material from the substrate through exposure to a high density plasma generated using an in... | 09/16/2008 |
| 7412764 | Method for manufacturing quartz crystal unit and electronic apparatus having quartz crystal unit In a method for manufacturing a quartz crystal unit, a quartz crystal tuning fork resonator is formed by etching a quartz crystal wafer to form a quartz crystal tuning fork base and first and second quartz crystal tuning fork tines connected to the quartz crystal tu... | 08/19/2008 |
| 7402255 | MEMS scanning mirror with trenched surface and I-beam like cross-section for reducing inertia and deformation A micro-electro-mechanical system (MEMS) device includes a mirror having a top surface with trenches, a beam connected to the mirror, rotational comb teeth connected to the beam, and one or more springs connecting the beam to a bonding pad. The mirror can have a bot... | 07/22/2008 |
| 7393795 | Methods for post-etch deposition of a dielectric film Methods for post-etch deposition on a dielectric film are provided in the present invention. In one embodiment, the method includes providing a substrate having a low-k dielectric layer disposed thereon in a etch reactor, etching the low-k dielectric layer in the et... | 07/01/2008 |
| 7361285 | Method for fabricating cliche and method for forming pattern using the same A method for fabricating a cliché including: providing a transparent glass substrate; depositing a metal layer on the substrate; patterning the metal layer and thereby forming a first metal pattern; etching the glass substrate by using the first metal pattern as a ... | 04/22/2008 |
| 7354526 | Processing method for glass substrate, processed glass product and stress applying apparatus A processing method for glass substrate of the present invention includes: applying heat and external force to a glass substrate and then cooling it down to thereby form a compression stressed part having a different etching rate from that of other parts with respec... | 04/08/2008 |
| 7351347 | Gallium-nitride deposition substrate, method of manufacturing gallium-nitride deposition substrate, and method of manufacturing gallium nitride substrate GaN crystal having few dislocations is grown by using together ELO-mask and defect-seeding-mask means. ELO masks make it so that GaN crystal does not grow directly, but grows laterally; defect-seeding masks make it so that closed defect-gathering regions in which de... | 04/01/2008 |
| 7346981 | Method for fabricating microelectromechanical system (MEMS) devices A process for fabricating a MEMS device comprises the steps of depositing and patterning on one side of a wafer a layer of material having a preselected electrical resistivity; bonding a substrate to the one side of the wafer using an adhesive bonding agent, the sub... | 03/25/2008 |
| 7341952 | Multi-layer hard mask structure for etching deep trench in substrate A method for etching a deep trench in a substrate. A multi-layer hard mask structure is formed overlying the substrate, which includes a first hard mask layer and at least one second hard mask layer disposed thereon. The first hard mask layer is composed of a first ... | 03/11/2008 |
| 7335600 | Method for removing photoresist A method for removing photoresist is described. A substrate having a photoresist to be removed thereon is provided, and then an ashing process is performed to remove most of the photoresist. The substrate is then subjected to a surface treatment that provides suffic... | 02/26/2008 |
| 7316785 | Methods and apparatus for the optimization of etch resistance in a plasma processing system In a plasma processing system, including a plasma processing chamber, a method of optimizing the etch resistance of a substrate material is described. The method includes flowing pre-coat gas mixture into the plasma processing chamber, wherein the pre-coat gas mixtu... | 01/08/2008 |
| 7311852 | Method of plasma etching low-k dielectric materials A semiconductor manufacturing process wherein a low-k dielectric layer is plasma etched with selectivity to an overlying mask layer. The etchant gas can be oxygen-free and include a fluorocarbon reactant, a nitrogen reactant and an optional carrier gas, the fluoroca... | 12/25/2007 |
| RE39895 | Semiconductor integrated circuit arrangement fabrication method To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited t... | 10/23/2007 |
| 7280727 | Micro-well and methods of fabricating and selectively blackening the same Well plates adaptable for specimen sampling in the biological, chemical and pharmaceutical sciences are fabricated by dissolving fusedly-retained cores from the cladding material of a fused fiber plate to define a capillary plate including first and second faces and... | 10/09/2007 |
| 7247252 | Method of avoiding plasma arcing during RIE etching A method for avoiding plasma arcing during a reactive ion etching (RIE) process including providing a semiconductor wafer having a process surface for depositing a dielectric insulating layer; depositing at least a portion of a dielectric insulating layer to form a ... | 07/24/2007 |
| 7201852 | Method for removing defects from silicon bodies by a selective etching process A method for eliminating eruptions, impurities, and/or damage in a crystal lattice by selectively etching silicon elements of surface-plated and sawn-out parts of a silicon wafer. At least areas of the silicon elements are brought into contact with a gaseous etching... | 04/10/2007 |
| 7118683 | Methods of etching silicon-oxide-containing compositions The invention encompasses a method of enhancing selectivity of etching silicon dioxide relative to one or more organic substances. A material comprising one or more elements selected from Group VIII of the periodic table is provided within a reaction chamber; and a ... | 10/10/2006 |
| RE39273 | Hard masking method for forming patterned oxygen containing plasma etchable layer A method for forming a patterned microelectronics layer within a microelectronics fabrication. There is first provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate an oxygen containing plasma etchable microelect... | 09/12/2006 |
| 7098137 | Micro corner cube array, method of making the micro corner cube array, and display device A method of making a micro corner cube array includes the steps of: providing a substrate, at least a surface portion of which consists of cubic single crystals and which has a surface that is substantially parallel to {111} planes of the crystals; and dry-etching t... | 08/29/2006 |
| 7094670 | Plasma immersion ion implantation process A method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber, includes placing the workpiece on a workpiece support in the chamber, controlling a temperature of the wafer support near a constant level, performing plasma immersi... | 08/22/2006 |
| 7090782 | Etch with uniformity control A method of forming semiconductor devices on a wafer is provided. An etch layer is formed over a wafer. A photoresist mask is formed over the etch layer. The photoresist mask is removed only around an outer edge of the wafer to expose the etch layer around the outer... | 08/15/2006 |
| 7083740 | Method for manufacturing resonant device A piezoelectric member and an electrode are formed over a silicon substrate. The piezoelectric member and the electrode are patterned by photolithography. The silicon substrate is etched to form a body. A protective film is formed on at least one surface of the body... | 08/01/2006 |
| 7081417 | Manufacturing method for electronic device and multiple layer circuits thereof To provide a planarization method which does not depend upon the size and the density of a wiring pattern and in which a reliable wiring system and a Josephson device can be formed and wiring structure, an insulation layer is planarized by forming a reversal pattern... | 07/25/2006 |
| 7078334 | In situ hard mask approach for self-aligned contact etch According to one embodiment, a method (100) may include forming a first insulating layer over a semiconductor substrate (step 102), forming a hard mask layer (step 104), and forming a photoresist etch mask having a thickness of less than about 4... | 07/18/2006 |
| 7078239 | Integrated circuit structure formed by damascene process An integrated circuit structure is formed using a damascene process that involves forming a trench or cavity for the structure in a temporary layer of material. A conductive material, such as copper, can then be deposited on the temporary layer to overfill the trenc... | 07/18/2006 |
| 7059335 | Process for treating moulds or mould halves for the production of ophthalmic lenses In a process for treating moulds or mould halves (3) for the production of ophthalmic lenses, in particular contact lenses, the moulds or mould halves (3) are exposed to a plasma at least in the area of their shaping surfaces (310). ... | 06/13/2006 |
| 7041230 | Method for selectively etching organosilicate glass with respect to a doped silicon carbide A semiconductor chip formed on a substrate is provided. An oxygen-doped silicon carbide etch stop layer is formed over the substrate. An organosilicate glass layer is formed over the oxygen-doped silicon carbide etch stop layer. A feature is selectively etched in th... | 05/09/2006 |
| 7005079 | Manufacturing method of light-guiding apparatus for using in backlight of liquid crystal display Due to lights with different wavelengths having different indexes of refraction in a liquid crystal, a retardation between lights with different wavelengths occurs and causes the problem of viewing angle of the liquid crystal display. The present invention provides ... | 02/28/2006 |
| 6995094 | Method for deep trench etching through a buried insulator layer A method for etching a silicon on insulator (SOI) substrate includes opening a hardmask layer formed on an SOI layer, and etching through the SOI layer, a buried insulator layer underneath the SOI layer, and a bulk silicon layer beneath the buried insulator layer us... | 02/07/2006 |
| 6974547 | Flexible thin film capacitor and method for producing the same According to a flexible thin film capacitor of the present invention, an adhesive film is formed on a substrate composed of at least one selected from the group consisting of an organic polymer and a metal foil, and an inorganic high dielectric film and metal electr... | 12/13/2005 |
| 6969568 | Method for etching a quartz layer in a photoresistless semiconductor mask A chromeless phase lithography mask (30) that does not require photoresist to manufacture has a quartz substrate (32) is etched by using a plasma (38) containing one of a nitrogen augmented hydro-fluorocarbon oxygen mixture and a nitrogen augmen... | 11/29/2005 |
| 6942812 | Method of manufacturing etalon In producing an etalon, a thickness of an etalon base plate is measured, and the etalon base plate is placed in a process chamber. Then, a gas having a chemical reactivity with respect to a material of the etalon base plate is introduced into the process chamber, an... | 09/13/2005 |
| 6942816 | Methods of reducing photoresist distortion while etching in a plasma processing system A method for substantially reducing photoresist wiggling while etching a layer on a substrate is provided. The substrate having thereon the layer disposed below a photoresist mask is introduced into the plasma processing chamber. An etchant source gas mixture is flo... | 09/13/2005 |
| 6933236 | Method for forming pattern using argon fluoride photolithography A method for forming a photoresist pattern with minimally reduced transformations through the use of ArF photolithography, including the steps of: forming an organic anti-reflective coating layer on a an etch-target layer already formed on a substrate; coating a pho... | 08/23/2005 |
| 6928841 | Optical fiber preform manufacture using improved VAD The specification describes a VAD method for producing optical fiber preforms by depositing soot onto a solid core rod. The solid core rod preferably has a uniform composition, doped or undoped, suitable for the center core region of the preform. The primary claddin... | 08/16/2005 |
