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Pizza Pie With Concentric Rings of Crust
A pizza mold for forming a plurality of concentric raised ridges of dough (i.e., crust) on the surface of a pizza pie.
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| Number | Title | Issue Date |
| 8187486 | Modulating etch selectivity and etch rate of silicon nitride thin films Etching of nitride and oxide layers with reactant gases is modulated by etching in different process regimes. High etch selectivity to silicon nitride is achieved in an adsorption regime where the partial pressure of the etchant is lower than its vapor pressure. Low... | 05/29/2012 |
| 8088297 | Combined etching and doping media for silicon dioxide layers and underlying silicon The present invention relates firstly to HF/fluoride-free etching and doping media which are suitable both for the etching of silicon dioxide layers and also for the doping of underlying silicon layers. The present invention also relates secondly to a process in whi... | 01/03/2012 |
| 7981308 | Method of etching a device using a hard mask and etch stop layer A method of etching a device in one embodiment includes providing a silicon carbide substrate, forming a silicon nitride layer on a surface of the silicon carbide substrate, forming a silicon carbide layer on a surface of the silicon nitride layer, forming a silicon... | 07/19/2011 |
| 7938977 | Method of modulating resonant frequency of torsional MEMS device A torsional MEMS device is disclosed. The torsional MEMS device includes a support structure, a platform, and at least two hinges, which connects the platform to the support structure. The platform has an active area and a non-active area. A plurality of sacrificial... | 05/10/2011 |
| 7875199 | Radical generating method, etching method and apparatus for use in these methods The method for generating radicals comprises: feeding F2 gas or a mixed gas of F2 gas and an inert gas into a chamber of which the inside is provided with a carbon material, supplying a carbon... | 01/25/2011 |
| 7833430 | Method for fabricating microstructure and microstructure A method of making a microstructure with thin wall portions (T1-T3) includes a step of performing a first etching process to a material substrate having a laminate structure including a first conductive layer (11) and a second conductive layer (... | 11/16/2010 |
| 7815815 | Method and apparatus for processing the peripheral and edge portions of a wafer after performance of a surface treatment thereon A surface processing method includes supporting a wafer in a vacuum chamber and generating a plasma in a confined portion of the chamber over only a selected portion of the wafer to thereby perform a surface processing treatment (e.g., an ashing process) on the sele... | 10/19/2010 |
| 7591958 | Thin glass chip for an electronic component and manufacturing method The manufacturing of electronic components on individual substrates made of an insulating material includes molding, in a silicon wafer, an insulating material with a thickness corresponding to the final thickness desired for the substrates, manufacturing the electr... | 09/22/2009 |
| 7442317 | Method of forming a nozzle rim A method of forming a nozzle rim for a nozzle aperture is provided. The method is suitable for forming part of a printhead fabrication process. The method comprises the steps of: (a) depositing a roof material layer over a sacrificial layer; and (b) removing a first... | 10/28/2008 |
| 7435354 | Treatment method for surface of photoresist layer and method for forming patterned photoresist layer A treatment method for a surface of a photoresist layer is provided. After forming a patterned photoresist layer over a wafer, a surface treatment step is performed to the photoresist layer by using at least one reaction gas comprising hydrogen bromide or hydrogen i... | 10/14/2008 |
| 7432205 | Method for controlling polishing process The invention is directed to a method for controlling a polishing process. The method comprises steps of providing a first wafer, wherein a thin film is located over the first wafer. A film average thickness distribution is obtained by measuring a plurality of thick... | 10/07/2008 |
| 7431853 | Selective etching of oxides from substrates A method and system for release etching a micro-electrical-mechanical-systems (MEMS) device from a substrate. In one aspect, the invention is a method comprising (a) supporting at least one substrate having a sacrificial oxide and a non-sacrificial material in a pro... | 10/07/2008 |
| 7425277 | Method for hard mask CD trim Broadly speaking, methods and an apparatus are provided for removing an inorganic material from a substrate. More specifically, the methods provide for removing the inorganic material from the substrate through exposure to a high density plasma generated using an in... | 09/16/2008 |
| 7413992 | Tungsten silicide etch process with reduced etch rate micro-loading The embodiments provides an improved tungsten silicide etching process with reduced etch rate micro-loading effect. In one embodiment, a method for etching a layer formed on a substrate is provided. The method includes providing a substrate into a plasma processing ... | 08/19/2008 |
| 7405161 | Method for fabricating a semiconductor device Method for fabricating a semiconductor device in which a by-product of etching is deposited on a photoresist film for using as a mask. The method for fabricating a semiconductor device includes the steps of depositing a polysilicon, and a bottom anti-refection coati... | 07/29/2008 |
| 7396711 | Method of fabricating a multi-cornered film Embodiments of the present invention describe a method of forming a multi-cornered film. According to the embodiments of the present invention, a photoresist mask is formed on a hard mask film formed on a film. The hard mask film is then patterned in alignment with ... | 07/08/2008 |
| 7393460 | Plasma processing method and plasma processing apparatus The plasma processing method comprises the step of removing an organic material film forming an upper layer relative to a patterned SiOCH series film by the processing with a plasma of a process gas containing an O2 gas, wherein the plasma has an O2 | 07/01/2008 |
| 7393788 | Method and system for selectively etching a dielectric material relative to silicon A method and system for selectively and uniformly etching a dielectric layer with respect to silicon and polysilicon in a dry plasma etching system are described. The etch chemistry comprises the use of fluorohydrocarbons, such as CH2F2 and CHF... | 07/01/2008 |
| 7387743 | Etching method and apparatus, computer program and computer readable storage medium An etching method, for etching a silicon nitride film on an underlying silicon oxide film by using a hard mask whose principal component is a silicon oxide, includes a step of etching the hard mask by using the resist film as a mask to form a mask pattern therein; a... | 06/17/2008 |
| 7381340 | Ink jet printhead that incorporates an etch stop layer An ink jet printhead chip that is manufactured in accordance with an integrated circuit fabrication technique includes a wafer substrate that defines a plurality of nozzle chambers as a result of an etching process. An etch stop layer is positioned on a front side o... | 06/03/2008 |
| 7368062 | Method and apparatus for a low parasitic capacitance butt-joined passive waveguide connected to an active structure Undoped layers are introduced in the passive waveguide section of a butt-joined passive waveguide connected to an active structure. This reduces the parasitic capacitance of the structure. ... | 05/06/2008 |
| 7368226 | Method for forming fine patterns of semiconductor device A method for forming fine patterns of a semiconductor device is provided, the method including forming a first lower layer pattern having a width of two minimum line width and a space pattern on a semiconductor substrate prior to a C-HALO implant process and etching... | 05/06/2008 |
| 7368063 | Method for manufacturing ink-jet printhead In an ink-jet printhead and a method for manufacturing the same, the ink-jet printhead includes a substrate, an ink chamber to be filled with ink formed on a front surface of the substrate, a manifold for supplying ink to the ink chamber formed on a rear surface of ... | 05/06/2008 |
| 7361287 | Method for etching structures in an etching body by means of a plasma A method is proposed for etching structures into an etching body, in particular, recesses which are laterally precisely defined by an etching mask, into a silicon body, using a plasma. In the process, a high-frequency pulsed, low-frequency modulated high-frequency p... | 04/22/2008 |
| 7361285 | Method for fabricating cliche and method for forming pattern using the same A method for fabricating a cliché including: providing a transparent glass substrate; depositing a metal layer on the substrate; patterning the metal layer and thereby forming a first metal pattern; etching the glass substrate by using the first metal pattern as a ... | 04/22/2008 |
| 7361605 | System and method for removal of photoresist and residues following contact etch with a stop layer present In processing an integrated circuit structure including a contact arrangement that is initially covered by a stop layer, a first plasma is used to etch to form openings through an overall insulation layer covered by a patterned layer of photoresist such that one con... | 04/22/2008 |
| 7358192 | Method and apparatus for in-situ film stack processing Embodiments of a cluster tool, processing chamber and method for processing a film stack are provided. In one embodiment, a method for in-situ etching of silicon and metal layers of a film stack is provided that includes the steps of etching an upper metal layer of ... | 04/15/2008 |
| 7354695 | Producing a substrate having high surface-area texturing A method is provided for preparing high surface-area texturing of a substrate using methods by which material from a substrate is subtracted from or added to the surface of the substrate. In one embodiment, the method is a subtractive lithographic method that involv... | 04/08/2008 |
| 7351347 | Gallium-nitride deposition substrate, method of manufacturing gallium-nitride deposition substrate, and method of manufacturing gallium nitride substrate GaN crystal having few dislocations is grown by using together ELO-mask and defect-seeding-mask means. ELO masks make it so that GaN crystal does not grow directly, but grows laterally; defect-seeding masks make it so that closed defect-gathering regions in which de... | 04/01/2008 |
| 7344652 | Plasma etching method An etching method for forming a recess (220) having an opening dimension (R) of millimeter order in an object (212) to be etched such as a semiconductor wafer. A mask (214) having an opening corresponding to the recess (220) is formed on ... | 03/18/2008 |
| 7341952 | Multi-layer hard mask structure for etching deep trench in substrate A method for etching a deep trench in a substrate. A multi-layer hard mask structure is formed overlying the substrate, which includes a first hard mask layer and at least one second hard mask layer disposed thereon. The first hard mask layer is composed of a first ... | 03/11/2008 |
| 7341672 | Method of fabricating printhead for ejecting ink supplied under pulsed pressure A method of fabricating a printhead is provided in which sacrificial material is deposited on a drive circuitry substrate and etched to define first zones, thermally expandable material is deposited on the first zones and etched with the substrate to define second z... | 03/11/2008 |
| 7338907 | Selective etching processes of silicon nitride and indium oxide thin films for FeRAM device applications A dry etch process is described for selectively etching silicon nitride from conductive oxide material for use in a semiconductor fabrication process. Adding an oxidant in the etch gas mixture could increase the etch rate for the silicon nitride while reducing the e... | 03/04/2008 |
| 7338610 | Etching method for manufacturing semiconductor device A wafer having a dielectric layer and an electrode partially protruding from the top surface of the dielectric layer is provided. The dielectric layer is etched with a chemical solution such as LAL. Prior to etching, the protruding portion of the electrode is remove... | 03/04/2008 |
| 7326358 | Plasma processing method and apparatus, and storage medium A plasma processing method performs a plasma processing on a substrate mounted on a mounting table installed in an airtight processing chamber, the mounting table having a smaller size than the substrate. The substrate having a surface, on which a resist mark is for... | 02/05/2008 |
| 7316785 | Methods and apparatus for the optimization of etch resistance in a plasma processing system In a plasma processing system, including a plasma processing chamber, a method of optimizing the etch resistance of a substrate material is described. The method includes flowing pre-coat gas mixture into the plasma processing chamber, wherein the pre-coat gas mixtu... | 01/08/2008 |
| 7314574 | Etching method and apparatus An etching apparatus comprises a workpiece holder (21) for holding a workpiece (X), a plasma generator (10, 20) for generating a plasma (30) in a vacuum chamber (3), an orifice electrode (4) disposed between the workpiece holder ( | 01/01/2008 |
| 7311850 | Method of forming patterned thin film and method of fabricating micro device In a method of forming a patterned thin film, first, an etching stopper film and a film to be patterned are formed in this order on a base layer. Next, a patterned first film is formed on the film to be patterned. Next, a second film is formed over an entire surface... | 12/25/2007 |
| 7312141 | Shapes-based migration of aluminum designs to copper damascene An interconnect structure, method of fabricating the interconnect structure and method of designing the interconnect structure for use in semiconductor devices. The interconnect structure includes a damascene metal wire having a pattern of dielectric filled holes. | 12/25/2007 |
| 7309641 | Method for rounding bottom corners of trench and shallow trench isolation process A method for rounding the bottom corners of a trench is described. In the method, an etching process is performed using a fluorocarbon compound with at least two carbon atoms, He and O2 as an etching gas to round the bottom corners of the trench. ... | 12/18/2007 |
