Bizarre Patents
A sealed crustless sandwich for providing a convenient sandwich without an outer crust which can be stored for long periods of time without a central filling from leaking outwardly.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7425510 | Methods of cleaning processing chamber in semiconductor device fabrication equipment Methods of cleaning a processing chamber of semiconductor device fabrication equipment are highly effective in removing polymers produced as a by-product of a fabrication process from surfaces in a processing chamber. The cleaning process uses a plasma etchant produ... | 09/16/2008 |
| 7371588 | Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device includes: forming a circuit element on a semiconductor substrate; forming a first insulation film on top to cover the circuit element; forming a first electrode on top; forming a ferroelectric film on the first electr... | 05/13/2008 |
| 7368394 | Etch methods to form anisotropic features for high aspect ratio applications Methods for forming anisotropic features for high aspect ratio application in etch process are provided in the present invention. The methods described herein advantageously facilitates profile and dimension control of features with high aspect ratios through a side... | 05/06/2008 |
| 7361285 | Method for fabricating cliche and method for forming pattern using the same A method for fabricating a cliché including: providing a transparent glass substrate; depositing a metal layer on the substrate; patterning the metal layer and thereby forming a first metal pattern; etching the glass substrate by using the first metal pattern as a ... | 04/22/2008 |
| 7357138 | Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials A process for the removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance having a dielectric constant greater than silicon dioxide from a substrate... | 04/15/2008 |
| 7354526 | Processing method for glass substrate, processed glass product and stress applying apparatus A processing method for glass substrate of the present invention includes: applying heat and external force to a glass substrate and then cooling it down to thereby form a compression stressed part having a different etching rate from that of other parts with respec... | 04/08/2008 |
| 7335600 | Method for removing photoresist A method for removing photoresist is described. A substrate having a photoresist to be removed thereon is provided, and then an ashing process is performed to remove most of the photoresist. The substrate is then subjected to a surface treatment that provides suffic... | 02/26/2008 |
| 7264677 | Process for treating solid surface and substrate surface Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their oxides, and the ozone without any damages to... | 09/04/2007 |
| 7217665 | Method of plasma etching high-K dielectric materials with high selectivity to underlying layers A method of plasma etching a layer of dielectric material having a dielectric constant that is greater than four (4). The method includes exposing the dielectric material layer to a plasma comprising a hydrocarbon gas and a halogen containing gas. ... | 05/15/2007 |
| 7187523 | Method of marking sintered body and method for manufacturing magnetic head wafer A method of marking a sintered body includes the step of preparing the sintered body by sintering a mixture of first and second types of powder particles. The first type of powder particles is made of a first material and the second type of powder particles is made ... | 03/06/2007 |
| 7147794 | Coating for forming a high definition aperture An optical thin film stack for a dark aperture is deposited using thermal ion-assisted deposition (“IAD”). The IAD provides an energetic deposition of chromium and chromium oxide that results in a dark mirror optical thin film stack with superior etch properties... | 12/12/2006 |
| 7128846 | Process for producing group III nitride compound semiconductor A method including the steps of: modifying at least one part of a sapphire substrate by dry etching to thereby form any one of a dot shape, a stripe shape, a lattice shape, etc. as an island shape on the sapphire substrate; forming an AlN buffer layer on the sapphir... | 10/31/2006 |
| 7111629 | Method for cleaning substrate surface There is provided a surface cleaning apparatus and method using plasma to remove a native oxide layer, a chemical oxide layer, and a damaged portion from a silicon substrate surface, and contaminants from a metal surface. A mixture of H2 and N2 | 09/26/2006 |
| 7107998 | Method for preventing and cleaning ruthenium-containing deposits in a CVD apparatus Carbon monoxide gas is provided in a ruthenium-deposition apparatus to clean undesired ruthenium-containing deposits from apparatus surfaces. Carbon monoxide gas is mixed with reactant gases in apparatus tubing and in a ruthenium-deposition reaction chamber to inhib... | 09/19/2006 |
| RE39273 | Hard masking method for forming patterned oxygen containing plasma etchable layer A method for forming a patterned microelectronics layer within a microelectronics fabrication. There is first provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate an oxygen containing plasma etchable microelect... | 09/12/2006 |
| 7096873 | Method for manufacturing a group III nitride compound semiconductor device A method for manufacturing a group III nitride compound semiconductor device includes irradiating a surface of a wafer with ultraviolet rays to thereby clean a resist residue from the surface of the wafer, the surface including a group III nitride compound semicondu... | 08/29/2006 |
| 7037848 | Methods of etching insulative materials, of forming electrical devices, and of forming capacitors In one aspect, the invention encompasses a method of etching insulative materials which comprise complexes of metal and oxygen. The insulative materials are exposed to physical etching conditions within a reaction chamber and in the presence of at least one oxygen-c... | 05/02/2006 |
| 7033952 | Apparatus and method using a remote RF energized plasma for processing semiconductor wafers Chemical generator and method for generating a chemical species at a point of use such as the chamber of a reactor in which a workpiece such as a semiconductor wafer is to be processed. The species is generated by creating free radicals, and combining the free radic... | 04/25/2006 |
| 7025896 | Process for treating solid surface and substrate surface Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their oxides, and the ozone without any damages to... | 04/11/2006 |
| 6939472 | Etching method in fabrications of microstructures The present invention teaches a method and apparatus for removing sacrificial materials in fabrications of microstructures using one or more selected spontaneous vapor phase etchants. The selected etchant is fed into an etch chamber containing the microstructure dur... | 09/06/2005 |
| 6906895 | Method of marking sintered body and method for manufacturing magnetic head wafer A method of marking a sintered body includes the step of preparing the sintered body by sintering a mixture of first and second types of powder particles. The first type of powder particles is made of a first material and the second type of powder particles is made ... | 06/14/2005 |
| 6838012 | Methods for etching dielectric materials Methods of etching dielectric materials in a semiconductor processing apparatus use a thick silicon upper electrode that can be operated at high power levels for an extended service life. ... | 01/04/2005 |
| 6824699 | Method of treating an insulting layer This invention relates to a method of heating an insulating layer, such as is found in semiconductor devices, in which a formation has been etched through a layer of resist comprising reactive etching the resist, inhibiting absorption of or removing water vapour and... | 11/30/2004 |
| 6806035 | Wafer serialization manufacturing process for read/write heads using photolithography and selective reactive ion etching A serialization process presents an efficient method of creating serial numbers on a ceramic-like semiconductor wafer by forming a non-rigid photomask that incorporates character specifications for the serial numbers. The non-rigid photomask is retained in a rigid, ... | 10/19/2004 |
| 6706334 | Processing method and apparatus for removing oxide film Disclosed are a processing method and apparatus for removing a native oxide film from the surface of a subject to be treated. In this method and apparatus, gas generated from N2, H2 and NF3 gases is reacted with the surface of the su... | 03/16/2004 |
| 6685848 | METHOD AND APPARATUS FOR DRY-ETCHING HALF-TONE PHASE-SHIFT FILMS HALF-TONE PHASE-SHIFT PHOTOMASKS AND METHOD FOR THE PREPARATION THEREOF AND SEMICONDUCTOR CIRCUITS AND METHOD FOR THE FABRICATION THEREOF A dry-etching method comprises the step of dry-etching a metal thin film as a chromium-containing half-tone phase-shift film, wherein the method is characterized by using, as an etching gas, a mixed gas including (a) a reactive ion etching gas, which cont... | 02/03/2004 |
| 6679996 | Metal oxide pattern forming method In a pattern forming method for selectively forming an oxide layer on a substrate surface, the substrate surface is selectively coated with a coating layer. On the coating layer and an exposed part of the substrate surface, an oxide layer is formed by the... | 01/20/2004 |
| 6674562 | Interferometric modulation of radiation Improvements in an interferometric modulator that has a cavity defined by two walls.... | 01/06/2004 |
| 6666983 | Patterned coated articles and methods for producing the same The present invention is directed to an article with a patterned appearance provided by a visually observable contrast between one or more genereally transparent thin film coatings deposited over a substrate. At least one of the deposited coatings exhibit... | 12/23/2003 |
| 6623653 | System and method for etching adjoining layers of silicon and indium tin oxide A method has been provided for etching adjoining layers of indium tin oxide (ITO) and silicon in a single, continuous dry etching process. A conventional dry etching gas, such as HI, is used to etch ITO using RF or plasma energy. When the silicon layer un... | 09/23/2003 |
| 6613242 | Process for treating solid surface and substrate surface Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their reactors and application of the c... | 09/02/2003 |
| 6592770 | Method of treating an isulating layer This invention relates to a method of heating an insulating layer, such as is found in semiconductor devices, in which a formation has been etched through a layer of resist comprising reactive etching the resist, inhibiting absorption of or removing water... | 07/15/2003 |
| 6537461 | Process for treating solid surface and substrate surface Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their oxides, and the ozone without any... | 03/25/2003 |
| 6528429 | Methods of etching insulative materials, of forming electrical devices, and of forming capacitors In one aspect, the invention encompasses a method of etching insulative materials which comprise complexes of metal and oxygen. The insulative materials are exposed to physical etching conditions within a reaction chamber and in the presence of at least o... | 03/04/2003 |
| 6511918 | Method of structuring a metal-containing layer The processes allow structuring of a metal-containing layer. The metal-containing layer is etched, using an etching mask, in a plasma-assisted etching gas atmosphere at a temperature of over 130° C. and in the presence of at least one halogen compound an... | 01/28/2003 |
| 6436304 | Plasma processing method A plasma processing method using helicon wave excited plasma which makes it possible to control a degree of dissociation for a process gas by controlling the source power. In the plasma processing method using helicon wave excited plasma, the source power... | 08/20/2002 |
| 6428714 | Protective layer for continuous GMR design An improved process for manufacturing a spin valve structure that has buried leads is disclosed. A key feature is the inclusion in the process of a temporary protective layer over the seed layer on which the spin valve structure will be grown. This protec... | 08/06/2002 |
| 6423240 | Process to tune the slider trailing edge profile A method of altering the topography of a trailing edge of a slider is disclosed, the slider having a substrate surface, at least one magnetic recording head imbedded in an alumina undercoat, and a vertical axis relative to the substrate surface. The steps... | 07/23/2002 |
| 6419845 | Method of etching magnetic layer, of forming magnetic pole of thin film magnetic head and of manufacturing thin film magnetic head It is an object to provide a method of etching which enables measurement control of the micro width of a magnetic layer while shortening the time required for the etching procedure. An inorganic insulating film made of alumina which is the same material a... | 07/16/2002 |
| 6340435 | Integrated low K dielectrics and etch stops A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in depos... | 01/22/2002 |
