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| Number | Title | Issue Date |
| 7922927 | Method of forming one or more nanopores for aligning molecules for molecular electronics A technique is provided for forming a molecule or an array of molecules having a defined orientation relative to the substrate or for forming a mold for deposition of a material therein. The array of molecules is formed by dispersing them in an array of small, align... | 04/12/2011 |
| 7815814 | Method and system for dry etching a metal nitride A method and system of etching a metal nitride, such as titanium nitride, is described. The etching process comprises introducing a process composition having a halogen containing gas, such as Cl2, HBr, or BCl3, and a fluorocarbon gas having th... | 10/19/2010 |
| 7575693 | Method of aligning nanotubes and wires with an etched feature A method of forming an aligned connection between a nanotube layer and an etched feature is disclosed. An etched feature is formed having a top and a side and optionally a notched feature at the top. A patterned nanotube layer is formed such that the nanotube layer ... | 08/18/2009 |
| 7439188 | Reactor with heated and textured electrodes and surfaces A reactor for processing semiconductor wafers with electrodes and other surfaces that can be one of heated, textured and/or pre-coated in order to facilitate adherence of materials deposited thereon, and eliminate the disadvantages resulting from the spaulding, flak... | 10/21/2008 |
| 7429337 | Method for removing at least one area of a layer of a component consisting of metal or a metal compound The invention relates to a method for removing an area of a layer of a component consisting of metal or a metal compound. According to prior art, corrosion products of a component are removed in a first step by applying a molten mass or by heating in a voluminous po... | 09/30/2008 |
| 7393457 | Method for making a shadow mask for an opposed discharge plasma display panel The present invention is to provide a method for making a shadow mask for an opposed discharge plasma display panel by etching one lateral surface of a metal slab to produce a plurality of parallel and equidistant barrier ribs along the vertical and horizontal direc... | 07/01/2008 |
| 7393788 | Method and system for selectively etching a dielectric material relative to silicon A method and system for selectively and uniformly etching a dielectric layer with respect to silicon and polysilicon in a dry plasma etching system are described. The etch chemistry comprises the use of fluorohydrocarbons, such as CH2F2 and CHF... | 07/01/2008 |
| 7368063 | Method for manufacturing ink-jet printhead In an ink-jet printhead and a method for manufacturing the same, the ink-jet printhead includes a substrate, an ink chamber to be filled with ink formed on a front surface of the substrate, a manifold for supplying ink to the ink chamber formed on a rear surface of ... | 05/06/2008 |
| 7365012 | Etching method, a method of forming a trench isolation structure, a semiconductor substrate and a semiconductor apparatus An etching method of subjecting a base material to an etching process using an etching agent containing hydrogen fluoride and ozone is disclosed. The base material has a first region constituted from silicon as a main material and a second region constituted from Si... | 04/29/2008 |
| 7358192 | Method and apparatus for in-situ film stack processing Embodiments of a cluster tool, processing chamber and method for processing a film stack are provided. In one embodiment, a method for in-situ etching of silicon and metal layers of a film stack is provided that includes the steps of etching an upper metal layer of ... | 04/15/2008 |
| 7354695 | Producing a substrate having high surface-area texturing A method is provided for preparing high surface-area texturing of a substrate using methods by which material from a substrate is subtracted from or added to the surface of the substrate. In one embodiment, the method is a subtractive lithographic method that involv... | 04/08/2008 |
| 7332425 | Simultaneous deposition and etch process for barrier layer formation in microelectronic device interconnects The present invention provides a method of forming a interconnect barrier layer 100. In the method, physical vapor deposition of barrier material 200 is performed within an opening 140 located in a dielectric layer 135 of a substrate 1... | 02/19/2008 |
| 7311852 | Method of plasma etching low-k dielectric materials A semiconductor manufacturing process wherein a low-k dielectric layer is plasma etched with selectivity to an overlying mask layer. The etchant gas can be oxygen-free and include a fluorocarbon reactant, a nitrogen reactant and an optional carrier gas, the fluoroca... | 12/25/2007 |
| 7294409 | Medical devices having porous layers and methods for making same Methods for fabricating a medical device having at least one porous layer include providing a medical device having at least one alloy and removing at least one component of the alloy to form the porous layer. Although methods may be used to make stent devices with ... | 11/13/2007 |
| 7294281 | Optical information recording medium, original disc for optical information recording medium, and method of manufacturing the same An optical information recording medium, which includes both of a land surface and a groove surface as a recording track and presents high signal quality. The optical information recording medium includes both a land and a groove as the recording track on a substrat... | 11/13/2007 |
| 7285229 | Etchant and replenishment solution therefor, and etching method and method for producing wiring board using the same An etchant of the present invention includes an aqueous solution containing hydrochloric acid, nitric acid, and a cupric ion source. An etching method of the present invention includes bringing the etchant into contact with at least one metal selected from nickel, c... | 10/23/2007 |
| 7279108 | Method for the manufacture of printed circuit boards with plated resistors A process is revealed whereby resistors can be manufactured integral with a printed circuit board by plating the resistors onto the insulative substrate. Uniformization of the insulative substrate through etching and oxidation of the plated resistor are discussed as... | 10/09/2007 |
| 7270761 | Fluorine free integrated process for etching aluminum including chamber dry clean A fluorine-free integrated process for plasma etching aluminum lines in an integrated circuit structure including an overlying anti-reflection coating (ARC) and a dielectric layer underlying the aluminum, the process being preferably performed in a single plasma rea... | 09/18/2007 |
| 7262139 | Method suitable for batch ion etching of copper A method for etching metal deposited on a substrate, the method comprising: depositing a metal layer above a substrate; coating at least a portion of the deposited metal layer with a photo-resist; pattering the photo-resist; etching the deposited metal layer with an... | 08/28/2007 |
| 7259104 | Sample surface processing method A surface processing method of a sample having a mask layer that does not contain carbon as a major component formed on a substance to be processed, the substance being a metal, semiconductor and insulator deposited on a silicon substrate, includes the steps of inst... | 08/21/2007 |
| 7255804 | Process for making photonic crystal circuits using an electron beam and ultraviolet lithography combination A process for making photonic crystal circuit and a photonic crystal circuit consisting of regularly-distributed holes in a high index dielectric material, and controllably-placed defects within this lattice, creating waveguides, cavities, etc. for photonic devices.... | 08/14/2007 |
| 7238294 | Procedure for etching of materials at the surface with focussed electron beam induced chemical reactions at said surface The invention refers to a procedure for etching of materials at the surface by focussed electron beam induced chemical reactions at said surface. The invention is characterized in that in a vacuum atmosphere the material which is to be etched is irradiated with at l... | 07/03/2007 |
| 7229563 | Plasma etching of Ni-containing materials An apparatus and method are described for etching Ni-containing films using gas phase plasma etching. Etching of Ti—Ni alloys is carried out by exposure to plasma comprising hydrogen halide (HX) and carbonyl etching gases. The Ti in the Ti—Ni alloy is etched via... | 06/12/2007 |
| 7214325 | Method of fabricating ohmic contact on n-type gallium nitride (GaN) of room temperature by plasma surface treatment Forming low contract resistance metal contacts on GaN films by treating a GaN surface using a chlorine gas Inductively Coupled Plasma (ICP) etch process before the metal contacts are formed. Beneficially, the GaN is n-type and doped with Si, while the metal contacts... | 05/08/2007 |
| 7211462 | Process for large-scale production of CdTe/CdS thin film solar cells A process for large-scale production of CdTe/CdS thin film solar cells, films of the cells being deposited, in sequence, on a transparent substrate, the sequence comprising the steps of: depositing a film of a transparent conductive oxide (TCO) on the substrate; dep... | 05/01/2007 |
| 7208421 | Method and apparatus for production of metal film or the like In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a diff... | 04/24/2007 |
| 7204935 | Method of etching a metallic film on a substrate A method of etching a metallic film on a substrate. This method operates to inject an oxidizing agent through the use of a carrier gas to etch a source metal in the presence of a reducing agent such that the rate of etching can be controlled by controlling the flow ... | 04/17/2007 |
| 7192532 | Dry etching method A tungsten silicide layer (104) is etched by plasma etching using Cl2+O2 gas as etching gas. When etching of the tungsten silicide layer (104) is ended substantially, etching gas is switched to Cl2+O2+NF... | 03/20/2007 |
| 7166536 | Methods for plasma etching of silicon A method of plasma etching, in particular of anisotropic plasma etching, of laterally defined structures in a silicon substrate, using a process gas, includes having at least one passivating material precipitated on the side walls of the laterally defined structures... | 01/23/2007 |
| 7147794 | Coating for forming a high definition aperture An optical thin film stack for a dark aperture is deposited using thermal ion-assisted deposition (“IAD”). The IAD provides an energetic deposition of chromium and chromium oxide that results in a dark mirror optical thin film stack with superior etch properties... | 12/12/2006 |
| 7132124 | Die for molding honeycomb structure and manufacturing method thereof In a die for molding a honeycomb structure, in which a coating layer is formed on a die base so that slits with a particular width are provided, the slits are provided so as to have a width of 30 to 200 μm by forming the coating layer by a substrate layer with a th... | 11/07/2006 |
| 7124493 | Method of manufacturing a cardiac harness A cardiac harness for treating congestive heart failure is disclosed. The harness applies elastic, compressive reinforcement on the left ventricle to reduce deleterious wall tension and to resist shape change of the ventricle during the mechanical cardiac cycle. Rat... | 10/24/2006 |
| RE39273 | Hard masking method for forming patterned oxygen containing plasma etchable layer A method for forming a patterned microelectronics layer within a microelectronics fabrication. There is first provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate an oxygen containing plasma etchable microelect... | 09/12/2006 |
| 7096873 | Method for manufacturing a group III nitride compound semiconductor device A method for manufacturing a group III nitride compound semiconductor device includes irradiating a surface of a wafer with ultraviolet rays to thereby clean a resist residue from the surface of the wafer, the surface including a group III nitride compound semicondu... | 08/29/2006 |
| 7083740 | Method for manufacturing resonant device A piezoelectric member and an electrode are formed over a silicon substrate. The piezoelectric member and the electrode are patterned by photolithography. The silicon substrate is etched to form a body. A protective film is formed on at least one surface of the body... | 08/01/2006 |
| 7077973 | Methods for substrate orientation Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a photolithographic reticle including positioning the reticle in a first orientation on a re... | 07/18/2006 |
| 7074342 | Method of manufacturing optical crystal element of laser A method of manufacturing an optical crystal element of a laser device includes measuring an initial thickness of a crystal substrate formed of YAG or YVO4; introducing a mixture of a fluorine gas and an Ar gas having a ratio of the fluorine gas to the Ar... | 07/11/2006 |
| 7064076 | Process for low temperature, dry etching, and dry planarization of copper The subject invention pertains to a method and apparatus for etching copper (Cu). The subject invention can involve passing a halide gas over an area of Cu such that CuX, or CuX and CuX2, are formed, where X is the halide. Examples of halides which can be... | 06/20/2006 |
| 7064078 | Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the... | 06/20/2006 |
| 7060194 | Dry etching method for magnetic material A dry etching method in which a plasma of an etching gas is generated and a magnetic material is dry-etched using a mask material made of a non-organic material, wherein an alcohol having at least one hydroxyl group is used as the etching gas. The alcohol used as th... | 06/13/2006 |
