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| Number | Title | Issue Date |
| 7405162 | Etching method and computer-readable storage medium An etching method forms an opening with a substantially vertical profile extending to a stopper layer by performing an etching with a plasma of an etching gas acting on an object to be processed loaded in an evacuable processing vessel, wherein the object has a mask... | 07/29/2008 |
| 7402255 | MEMS scanning mirror with trenched surface and I-beam like cross-section for reducing inertia and deformation A micro-electro-mechanical system (MEMS) device includes a mirror having a top surface with trenches, a beam connected to the mirror, rotational comb teeth connected to the beam, and one or more springs connecting the beam to a bonding pad. The mirror can have a bot... | 07/22/2008 |
| 7399423 | Thin film support substrate for use in hydrogen production filter and production method of hydrogen production filter In a through hole closing process, a metal plate is attached to one surface of a conductive base member having a plurality of through holes by the use of a magnet, in a copper plating process, a copper plating layer is formed on the conductive base member and the me... | 07/15/2008 |
| 7396477 | Method for manufacturing a thermal interface material An exemplary method for manufacturing a thermal interface material includes the steps of: providing a first substrate having a first surface and an opposite second substrate having an opposite second surface spaced apart a predetermined distance; forming a number of... | 07/08/2008 |
| 7368062 | Method and apparatus for a low parasitic capacitance butt-joined passive waveguide connected to an active structure Undoped layers are introduced in the passive waveguide section of a butt-joined passive waveguide connected to an active structure. This reduces the parasitic capacitance of the structure. ... | 05/06/2008 |
| 7365016 | Anhydrous HF release of process for MEMS devices A method of etching a sacrificial oxide layer covering an etch-stop silicon nitride underlayer, involves exposing the sacrificial oxide to anhydrous HF at a temperature of less than about 100° C. and/or at vacuum level lower than 40 Torr; and subsequently performin... | 04/29/2008 |
| 7365012 | Etching method, a method of forming a trench isolation structure, a semiconductor substrate and a semiconductor apparatus An etching method of subjecting a base material to an etching process using an etching agent containing hydrogen fluoride and ozone is disclosed. The base material has a first region constituted from silicon as a main material and a second region constituted from Si... | 04/29/2008 |
| RE40264 | Multi-temperature processing The present invention provides a technique, including a method and apparatus, for etching a substrate in the manufacture of a device. The apparatus includes a chamber and a substrate holder disposed in the chamber. The substrate holder has a selected thermal mass to... | 04/29/2008 |
| 7358192 | Method and apparatus for in-situ film stack processing Embodiments of a cluster tool, processing chamber and method for processing a film stack are provided. In one embodiment, a method for in-situ etching of silicon and metal layers of a film stack is provided that includes the steps of etching an upper metal layer of ... | 04/15/2008 |
| 7326442 | Antireflective composition and process of making a lithographic structure An antireflective composition and a lithographic structure comprising a silicon-metal oxide, antireflective material derived from the composition. The antireflective composition comprises a polymer of formula I, | 02/05/2008 |
| 7311109 | Method for cleaning a processing chamber and method for manufacturing a semiconductor device A method for cleaning a processing chamber and manufacturing a semiconductor device by removing impurities from a substrate in the processing chamber with a plasma of a first gas including hydrogen gas. After the substrate is removed from the processing chamber, the... | 12/25/2007 |
| 7309448 | Selective etch process of a sacrificial light absorbing material (SLAM) over a dielectric material A process of selectively etching a sacrificial light absorbing material (SLAM) over a dielectric material, such as carbon doped oxide, on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a hydrofluorocarbon gas, an opti... | 12/18/2007 |
| 7300597 | Selective etch process of a sacrificial light absorbing material (SLAM) over a dielectric material A process of selectively etching a sacrificial light absorbing material (SLAM) over a dielectric material, such as carbon doped oxide, on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a hydrofluorocarbon gas, an opti... | 11/27/2007 |
| 7279108 | Method for the manufacture of printed circuit boards with plated resistors A process is revealed whereby resistors can be manufactured integral with a printed circuit board by plating the resistors onto the insulative substrate. Uniformization of the insulative substrate through etching and oxidation of the plated resistor are discussed as... | 10/09/2007 |
| 7241396 | Thin film support substrate for use in hydrogen production filter and production method of hydrogen production filter In a through hole closing process, a metal plate is attached to one surface of a conductive base member having a plurality of through holes by the use of a magnet, in a copper plating process, a copper plating layer is formed on the conductive base member and the me... | 07/10/2007 |
| 7204935 | Method of etching a metallic film on a substrate A method of etching a metallic film on a substrate. This method operates to inject an oxidizing agent through the use of a carrier gas to etch a source metal in the presence of a reducing agent such that the rate of etching can be controlled by controlling the flow ... | 04/17/2007 |
| 7198727 | Etching process for micromachining materials and devices fabricated thereby The present invention provides an optical microbench having intersecting structures etched into a substrate. In particular, microbenches in accordance with the present invention include structures having a planar surfaces formed along selected crystallographic plane... | 04/03/2007 |
| 7189334 | Printhead fabrication method A method of fabricating a plurality of nozzle arrangements for an inkjet printhead chip includes fabricating drive circuitry layers on a substrate with a CMOS fabrication process; depositing a first sacrificial layer on the substrate; depositing a heater layer for f... | 03/13/2007 |
| 7185415 | Method for forming a magnetic head having a flux shaping layer A method for fabricating a magnetic head includes forming a first pole and a flux shaping layer in spaced relation to the first pole. A nonmagnetic layer is formed adjacent the flux shaping layer and positioned on an air bearing surface (ABS) side of the flux shapin... | 03/06/2007 |
| 7172657 | Cleaning method of treatment equipment and treatment equipment In a state of the inside of a treatment chamber of treatment equipment being evacuated, therein a cleaning gas containing trifluoroaceticacid (TFA) as a cleaning agent is supplied. Metal such as copper used in the formation of an interconnection or an electrode and ... | 02/06/2007 |
| 7163641 | Method of forming high aspect ratio apertures A plasma etch process for etching BPSG employing two primary etchants at low flows and pressures, and a relatively low temperature environment within the etch chamber, which includes a fluorine scavenger in the form of silicon. The two primary etchant gases are CHF | 01/16/2007 |
| 7144822 | High density plasma process for optimum film quality and electrical results A method for plasma processing of semiconductor wafers is provided that reduces plasma-induced damage to the gate dielectric while limiting damage to the wafer from particulates that flake off of the interior surfaces of the reaction chamber. Plasma conditions are m... | 12/05/2006 |
| 7140374 | System, method and apparatus for self-cleaning dry etch A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species d... | 11/28/2006 |
| 7118679 | Method of fabricating a sharp protrusion A method of fabricating a sharp protrusion on an underlayer is disclosed. A tip layer is deposited on an underlayer and then a mask layer is deposited on the tip layer. The mask layer is patterned with a beam-and-hat pattern that is used to form a beam-and-hat mask ... | 10/10/2006 |
| 7111629 | Method for cleaning substrate surface There is provided a surface cleaning apparatus and method using plasma to remove a native oxide layer, a chemical oxide layer, and a damaged portion from a silicon substrate surface, and contaminants from a metal surface. A mixture of H2 and N2 | 09/26/2006 |
| 7105099 | Method of reducing pattern pitch in integrated circuits A method of reducing pattern pitch is provided. A material layer, a hard mask layer and a patterned photoresist layer are sequentially formed over a substrate. Using the patterned photoresist layer as etching mask, the hard mask layer is etched. Due to the trenching... | 09/12/2006 |
| RE39273 | Hard masking method for forming patterned oxygen containing plasma etchable layer A method for forming a patterned microelectronics layer within a microelectronics fabrication. There is first provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate an oxygen containing plasma etchable microelect... | 09/12/2006 |
| 7097776 | Method of fabricating microneedles A low cost method for fabricating microneedles is provided. According to one embodiment, the fabrication method includes the steps of: providing a substrate; forming a metal-containing seed layer on the top surface of the substrate; forming a nonconductive pattern o... | 08/29/2006 |
| 7098137 | Micro corner cube array, method of making the micro corner cube array, and display device A method of making a micro corner cube array includes the steps of: providing a substrate, at least a surface portion of which consists of cubic single crystals and which has a surface that is substantially parallel to {111} planes of the crystals; and dry-etching t... | 08/29/2006 |
| 7084072 | Method of manufacturing semiconductor device Disclosed is a method of manufacturing a semiconductor device. The method includes the steps of forming a gate in a cell region and a peripheral region of a substrate, depositing a buffer oxide layer on the gate and the substrate, annealing a resultant structure of ... | 08/01/2006 |
| 7083740 | Method for manufacturing resonant device A piezoelectric member and an electrode are formed over a silicon substrate. The piezoelectric member and the electrode are patterned by photolithography. The silicon substrate is etched to form a body. A protective film is formed on at least one surface of the body... | 08/01/2006 |
| 7071114 | Method and apparatus for dry etching A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditi... | 07/04/2006 |
| 7059335 | Process for treating moulds or mould halves for the production of ophthalmic lenses In a process for treating moulds or mould halves (3) for the production of ophthalmic lenses, in particular contact lenses, the moulds or mould halves (3) are exposed to a plasma at least in the area of their shaping surfaces (310). ... | 06/13/2006 |
| 7060193 | Method to form both high and low-k materials over the same dielectric region, and their application in mixed mode circuits A new method of provided for forming in one plane layers of semiconductor material having both high and low dielectric constants. Layers, having selected and preferably non-identical parameters of dielectric constants, are successively deposited interspersed with la... | 06/13/2006 |
| 7052622 | Method for measuring etch rates during a release process A method of determining the time to release of a movable feature in a multilayer substrate of silicon-containing materials including alternate layers of polysilicon and silicon oxide wherein a mass monitoring device determines the mass of a released feature, and the... | 05/30/2006 |
| 7049051 | Process for forming and acoustically connecting structures on a substrate The present invention describes a processes that builds an acoustic cavity, a chamber, and vent openings for acoustically connecting the chamber with the acoustic cavity. The dry etch processes may include reactive ion etches, which include traditional parallel plat... | 05/23/2006 |
| 7045070 | Method of producing an electrode configuration and method of electrically contacting the electrode configuration The electrode configuration includes at least one structured layer. A mask is produced on the layer to be structured and the layer is dry etched. The mask is at least slightly etchable by dry etching. The mask contains a metal silicide, a metal nitride or a metal ox... | 05/16/2006 |
| 7041224 | Method for vapor phase etching of silicon The etching of a material in a vapor phase etchant is disclosed where a vapor phase etchant is provided to an etching chamber at a total gas pressure of 10 Torr or more, preferably 20 Torr or even 200 Torr or more. The vapor phase etchant can be gaseous acid etchant... | 05/09/2006 |
| 7033515 | Method for manufacturing microstructure A method is for manufacturing a microstructure having a thin-walled portion with use of a material substrate. The material substrate has a laminated structure which includes a first conductor layer 101, a second conductor layer 102, a third conductor l... | 04/25/2006 |
| 7033665 | Precision mask for deposition and a method for manufacturing the same, an electroluminescence display and a method for manufacturing the same, and electronic equipment A precision mask for deposition is provided that includes a first brace having a plurlaity of sections placed in parallel to each other at given intervals. The first brace forms portions that define a plurality of first openings. The precision mask for deposition al... | 04/25/2006 |
