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Combination Beverage Container and Spittoon
A combination beverage container and spittoon includes a bottom portion including outer wall and a first inner wall defining a spittoon space.
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| Number | Title | Issue Date |
| 7431853 | Selective etching of oxides from substrates A method and system for release etching a micro-electrical-mechanical-systems (MEMS) device from a substrate. In one aspect, the invention is a method comprising (a) supporting at least one substrate having a sacrificial oxide and a non-sacrificial material in a pro... | 10/07/2008 |
| 7374696 | Method and apparatus for removing a halogen-containing residue The invention provides for a method and integrated system for removing a halogen-containing residue from a substrate comprising etching the substrate, heating the substrate and exposing the heated substrate to a plasma that removes the halogen-containing residue. | 05/20/2008 |
| 7370659 | Photolithographic stepper and/or scanner machines including cleaning devices and methods of cleaning photolithographic stepper and/or scanner machines Stepper and/or scanner machines including cleaning devices and methods for cleaning stepper and/or scanner machines are disclosed herein. In one embodiment, a stepper and/or scanner machine includes a housing, an illuminator, a lens, a workpiece support, a cleaning ... | 05/13/2008 |
| 7365016 | Anhydrous HF release of process for MEMS devices A method of etching a sacrificial oxide layer covering an etch-stop silicon nitride underlayer, involves exposing the sacrificial oxide to anhydrous HF at a temperature of less than about 100° C. and/or at vacuum level lower than 40 Torr; and subsequently performin... | 04/29/2008 |
| 7361234 | Photolithographic stepper and/or scanner machines including cleaning devices and methods of cleaning photolithographic stepper and/or scanner machines Stepper and/or scanner machines including cleaning devices and methods for cleaning stepper and/or scanner machines are disclosed herein. In one embodiment, a stepper and/or scanner machine includes a housing, an illuminator, a lens, a workpiece support, a cleaning ... | 04/22/2008 |
| 7329322 | Exhaust apparatus, semiconductor device manufacturing system and method for manufacturing semiconductor device In an exhaust pipe, a rotating shaft takeoff connection is provided so as to support a rotating shaft for rotating a switching valve fixed thereon. The rotating shaft extends to the outside of the exhaust pipe and is provided with an introduction hole and branch hol... | 02/12/2008 |
| 7326305 | System and method for decapsulating an encapsulated object A system and method for the selective etching or removal of encapsulating material from an encapsulated object, such as a semiconductor, includes depositing an encapsulant-removal agent, such as a solvent or acid, onto the surface of the object. A flow of heated gas... | 02/05/2008 |
| 7291559 | Etching method, gate etching method, and method of manufacturing semiconductor devices In a method of manufacturing a semiconductor device, a dummy sample and an actual device are prepared. The dummy sample and the actual device have substantially an identical layer and an identical resist pattern formed on the layer. Then, a dummy discharge is carrie... | 11/06/2007 |
| 7279431 | Vapor phase etching MEMS devices An etch release for a MEMS device on a substrate includes etching the substrate with an etchant vapor and a wetting vapor. A thermal bake of the MEMS device, after the etch release may be used to volatilize residues. A supercritical fluid may also be used to remove ... | 10/09/2007 |
| 7267130 | Substrate processing apparatus The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, interm... | 09/11/2007 |
| 7229522 | Substrate processing apparatus and substrate processing method A substrate processing apparatus removes resist films formed on wafers by holding the wafers in a processing vessel and exposing the wafers to a mixed gaseous fluid of steam and an ozone-containing gas into the processing vessel. The inner surfaces, to be exposed to... | 06/12/2007 |
| 7189332 | Apparatus and method for detecting an endpoint in a vapor phase etch Processes for the removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the ability to accurately determine the endpoint of the removal step. A vapor phase etchant is used to remov... | 03/13/2007 |
| 7153443 | Microelectromechanical structure and a method for making the same A microstructure and the method for making the same are disclosed herein. The microstructure has structural members, at least one of which comprises an intermetallic compound. In making such a microstructure, a sacrificial material is employed. After completion of f... | 12/26/2006 |
| 7144802 | Vapor deposition of benzotriazole (BTA) for protecting copper interconnects A method of protecting an interconnect is provided. The method includes forming an integrated circuit structure having an interconnect, and depositing vaporized benzotriazole on the interconnect. ... | 12/05/2006 |
| 7138336 | Plasma enhanced atomic layer deposition (PEALD) equipment and method of forming a conducting thin film using the same thereof A plasma enhanced atomic layer deposition (PEALD) apparatus and a method of forming a conductive thin film using the same are disclosed. According to the present invention of a PEALD apparatus and a method, a process gas inlet tube and a process gas outlet tube are ... | 11/21/2006 |
| 7112795 | Method of controlling metallic layer etching process and regenerating etchant for metallic layer etching process based on near infrared spectrometer In a method of controlling a metallic layer etching process for fabricating a semiconductor device or a liquid crystal display device, the composition of the etchant used in etching the metallic layer is first analyzed with the NIR spectrometer. The state of the etc... | 09/26/2006 |
| 7106491 | Split beam micromirror A system and method of providing a micromirror pixel 400 that is highly resistant to bright failure states. The micromirror 400 uses an asymmetric yoke 402 to ensure the mirror is only attracted to the address electrode in one rotation direction... | 09/12/2006 |
| 7052622 | Method for measuring etch rates during a release process A method of determining the time to release of a movable feature in a multilayer substrate of silicon-containing materials including alternate layers of polysilicon and silicon oxide wherein a mass monitoring device determines the mass of a released feature, and the... | 05/30/2006 |
| 7041224 | Method for vapor phase etching of silicon The etching of a material in a vapor phase etchant is disclosed where a vapor phase etchant is provided to an etching chamber at a total gas pressure of 10 Torr or more, preferably 20 Torr or even 200 Torr or more. The vapor phase etchant can be gaseous acid etchant... | 05/09/2006 |
| 7037842 | Method and apparatus for dissolving a gas into a liquid for single wet wafer processing A method and apparatus for processing a wafer is described. According to the present invention a wafer is placed on a substrate support. A liquid is then fed through a conduit having an output opening over the wafer. A gas is dissolved in the liquid prior to the liq... | 05/02/2006 |
| 6994612 | Methods for conditioning surfaces of polishing pads after chemical-mechanical polishing The invention includes a method for conditioning a surface of a polishing pad after chemical-mechanical polishing of a semiconductor substrate with the pad surface. The method includes exposing the pad surface to steam, and the steam can comprise ammonium citrate. T... | 02/07/2006 |
| 6979653 | Semiconductor fabrication methods and apparatus Methods and apparatus for fabricating and cleaning in-process semi-conductor wafers are provided. An in-process wafer is placed within a closed chamber. A reactant gas is incorporated in a liquid solvent to form a “reactant mixture” that is capable of reacting w... | 12/27/2005 |
| 6932915 | System and method for integrated oxide removal and processing of a semiconductor wafer An integrated oxide removal and processing system (10) includes a process module (30) that may intentionally add at least one film layer to a single semiconductor wafer (32). The integrated oxide removal and processing system (10) also in... | 08/23/2005 |
| RE38760 | Controlled etching of oxides via gas phase reactions Oxides are etched with a halide-containing species and a low molecular weight organic molecule having a high vapor pressure at standard conditions, where etching is performed at preset wafer temperature in an enclosed chamber at a pressure such that all species pres... | 07/19/2005 |
| 6887337 | Apparatus for etching semiconductor samples and a source for providing a gas by sublimation thereto An etching apparatus for etching semi combustion samples may include one or more variable volume expansion chambers, two or more fixed volume expansion chambers, or combinations thereof in fluid communication with an etching chamber and a source of etching gas, such... | 05/03/2005 |
| 6740247 | HF vapor phase wafer cleaning and oxide etching The invention provides HF vapor process conditions that can be precisely controlled with a high degree of reproducibility for a wide range of starting wafer conditions. These HF vapor processes for, e.g., etching oxide on a semiconductor substrate, cleaning a contam... | 05/25/2004 |
| 6620335 | Plasma etch reactor and method A plasma etch reactor 20 includes a upper electrode 24, a lower electrode 24, a peripheral ring electrode 26 disposed therebetween. The upper electrode 24 is grounded, the peripheral electrode 26 is powered by a high frequency AC power supply, while the l... | 09/16/2003 |
| 6602433 | Gas delivery system A substrate is treated by supplying an etchant and/or deposition gas into a chamber in which the substrate is situated. In order to avoid the problems associated with transportation of toxic gases, the gases required for such processes are delivered direc... | 08/05/2003 |
| 6558559 | Method of manufacturing micromechanical surface structures by vapor-phase etching A method of sacrificial layer etching of micromechanical surface structures, in which a sacrificial layer is deposited on a heatable silicon substrate and is structured. A temperature difference between the substrate and the vapor phase of an etching medi... | 05/06/2003 |
| 6333268 | Method and apparatus for removing post-etch residues and other adherent matrices Adherent matrix layers such as post-etch and other post-process residues are removed from a substrate by exposing them to a vapor phase solvent to allow penetration of the vapor phase solvent into the adherent matrix layers and condensing the vapor phase ... | 12/25/2001 |
| 6290864 | Fluoride gas etching of silicon with improved selectivity The etching of a sacrificial silicon portion in a microstructure such as a microelectromechanical structure by the use of etchant gases that are noble gas fluorides or halogen fluorides is performed with greater selectivity toward the silicon portion rela... | 09/18/2001 |
| 6290863 | Method and apparatus for etch of a specific subarea of a semiconductor work object The present invention provides a dynamic-flow system that uses a vacuum to pull an etchant or other processing agent through a nozzle onto the surface of the work object. The processing agent can only communicate with the vacuum and be pulled onto the waf... | 09/18/2001 |
| 6228563 | Method and apparatus for removing post-etch residues and other adherent matrices Adherent matrix layers such as post-etch and other post-process residues are removed from a substrate by exposing them to a vapor phase solvent to allow penetration of the vapor phase solvent into the adherent matrix layers and condensing the vapor phase ... | 05/08/2001 |
| 6218022 | Resin etching solution and process for etching polyimide resins A resin etching solution containing a hydroxyalkylamine, an alkali metal compound and water, or an aliphatic alcohol, an aliphatic amine, an alkali metal compound and water, and a process for etching a polyimide film containing a resist pattern or metal l... | 04/17/2001 |
| 6095158 | Anhydrous HF in-situ cleaning process of semiconductor processing chambers A method for removing glass deposition from a reactor chamber, at least one interior surface of the reactor chamber having the glass deposition deposited thereon. The invention includes introducing a gaseous cleaning mixture comprising an anhydrous hydrog... | 08/01/2000 |
| 6065481 | Direct vapor delivery of enabling chemical for enhanced HF etch process performance Apparatus and method for direct delivery of enabling chemical gas from a liquid source and of HF gas in a hydrogen fluoride/enabling chemical based cleaning or etching process, such as a silicon dioxide film etching process. The liquid enabling chemical i... | 05/23/2000 |
| 6024888 | Vapor selective etching method and apparatus In order to study an etching rate difference of a layer formed mainly with silicon dioxide on a wafer, a thermal oxide film (113) and layers of BSG (117), BPSG (125), and PSG (129) are laminated on a wafer and are etched in a gaseous etching atmosphere co... | 02/15/2000 |
| 5869400 | Method for dry-etching using gaseous bismuth halide compound The present invention provides a method for dry-etching a solid surface with a gaseous bismuth halide compound, which permits achivement of a simple and perfect dry-process for manufacturing of electoric devices, quantum devices etc., giving a high reprod... | 02/09/1999 |
| 5500081 | Dynamic semiconductor wafer processing using homogeneous chemical vapors Disclosed is a method for improved processing of semiconductor wafers and the like using processing chemicals, particularly hydrofluoric acid (HF) and water mixtures. Homogeneous vapor mixtures are generated from homogeneous liquid phase mixtures which ar... | 03/19/1996 |
| 5413671 | Apparatus and method for removing deposits from an APCVD system An apparatus and method is provided for removing deposits which accumulate within a continuous APCVD system having more than one reaction chamber. The apparatus includes means for delivering vaporized etchant material at a controlled flow rate to each rea... | 05/09/1995 |
