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| Number | Title | Issue Date |
| 8101092 | Method for controlling ADI-AEI CD difference ratio of openings having different sizes A method for controlling ADI-AEI CD difference ratios of openings having different sizes is provided. First, a first etching step using a patterned photoresist layer as a mask is performed to form a patterned Si-containing material layer and a polymer layer on sidew... | 01/24/2012 |
| 7993540 | Substrate processing method and substrate processing apparatus A substrate processing method which is capable of easily removing residue caused by hydrofluoric acid. By the substrate processing method, a substrate is processed which has a thermal oxide film formed by a thermal oxidation process and a BPSG film containing impuri... | 08/09/2011 |
| 7648641 | Method and apparatus for creating a topographically patterned substrate A method of the present invention is presented for deep etching of features on a surface. In one embodiment, the method includes providing a substrate having a surface selected to undergo a feature etching process and coating the substrate surface with a protective ... | 01/19/2010 |
| 7435074 | Method for fabricating dual damascence structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascence patterning The process of producing a dual damascene structure used for the interconnect architecture of semiconductor chips. More specifically the use of imprint lithography to fabricate dual damascene structures in a dielectric and the fabrication of dual damascene structure... | 10/14/2008 |
| 7425277 | Method for hard mask CD trim Broadly speaking, methods and an apparatus are provided for removing an inorganic material from a substrate. More specifically, the methods provide for removing the inorganic material from the substrate through exposure to a high density plasma generated using an in... | 09/16/2008 |
| 7405162 | Etching method and computer-readable storage medium An etching method forms an opening with a substantially vertical profile extending to a stopper layer by performing an etching with a plasma of an etching gas acting on an object to be processed loaded in an evacuable processing vessel, wherein the object has a mask... | 07/29/2008 |
| 7402255 | MEMS scanning mirror with trenched surface and I-beam like cross-section for reducing inertia and deformation A micro-electro-mechanical system (MEMS) device includes a mirror having a top surface with trenches, a beam connected to the mirror, rotational comb teeth connected to the beam, and one or more springs connecting the beam to a bonding pad. The mirror can have a bot... | 07/22/2008 |
| 7393795 | Methods for post-etch deposition of a dielectric film Methods for post-etch deposition on a dielectric film are provided in the present invention. In one embodiment, the method includes providing a substrate having a low-k dielectric layer disposed thereon in a etch reactor, etching the low-k dielectric layer in the et... | 07/01/2008 |
| 7384530 | Methods for electrochemically fabricating multi-layer structures including regions incorporating maskless, patterned, multiple layer thickness depositions of selected materials The invention includes methods of fabrication and apparatuses. In at least some embodiments of the applicants' invention, the methods include processes of: maskless selective deposition of non-layered structures, selective etching and/or deposition without use of a ... | 06/10/2008 |
| 7380320 | Piezoelectric device and method of manufacturing the device A piezoelectric device includes a substrate, a buffer layer on the substrate, a lower electrode layer on the buffer layer, a piezoelectric layer on the lower electrode layer, and an upper electrode layer on the piezoelectric layer. The piezoelectric layer has a base... | 06/03/2008 |
| 7364665 | Selective etching processes of SiO, Ti and InOthin films for FeRAM device applications A method of selectively etching a three-layer structure consisting of SiO2, In2O3, and titanium, includes etching the SiO2, stopping at the titanium layer, using C3F8 in a range of between about 10 sc... | 04/29/2008 |
| 7341941 | Methods to facilitate etch uniformity and selectivity A semiconductor device is fabricated with energy based process(es) that alter etch rates for dielectric layers within damascene processes. A first interconnect layer is formed over a semiconductor body. A first dielectric layer is formed over the first interconnect ... | 03/11/2008 |
| 7341825 | Method for producing high resolution nano-imprinting masters A method for producing high resolution nano-imprinting masters is disclosed. The method inverts the negative features of an exposed and developed positive e-beam resist to positive features in the patterned silicon nitride layer of the nano-imprinting master. A firs... | 03/11/2008 |
| 7338907 | Selective etching processes of silicon nitride and indium oxide thin films for FeRAM device applications A dry etch process is described for selectively etching silicon nitride from conductive oxide material for use in a semiconductor fabrication process. Adding an oxidant in the etch gas mixture could increase the etch rate for the silicon nitride while reducing the e... | 03/04/2008 |
| 7332425 | Simultaneous deposition and etch process for barrier layer formation in microelectronic device interconnects The present invention provides a method of forming a interconnect barrier layer 100. In the method, physical vapor deposition of barrier material 200 is performed within an opening 140 located in a dielectric layer 135 of a substrate 1... | 02/19/2008 |
| 7329609 | Substrate processing method and substrate processing apparatus In a substrate processing apparatus, a control electrode (131) separates a process space (11C) including a substrate to be processed and a plasma formation space (11B) not including the substrate. The control electrode includes a conductive memb... | 02/12/2008 |
| 7328497 | Incremental tuning process for electrical resonators based on mechanical motion A method is provided for adjusting the resonant frequency of a mechanical resonator whose frequency is dependent on the overall resonator thickness. Alternating selective etching is used to remove distinct adjustment layers from a top electrode. One of the electrode... | 02/12/2008 |
| 7326358 | Plasma processing method and apparatus, and storage medium A plasma processing method performs a plasma processing on a substrate mounted on a mounting table installed in an airtight processing chamber, the mounting table having a smaller size than the substrate. The substrate having a surface, on which a resist mark is for... | 02/05/2008 |
| 7316785 | Methods and apparatus for the optimization of etch resistance in a plasma processing system In a plasma processing system, including a plasma processing chamber, a method of optimizing the etch resistance of a substrate material is described. The method includes flowing pre-coat gas mixture into the plasma processing chamber, wherein the pre-coat gas mixtu... | 01/08/2008 |
| 7311852 | Method of plasma etching low-k dielectric materials A semiconductor manufacturing process wherein a low-k dielectric layer is plasma etched with selectivity to an overlying mask layer. The etchant gas can be oxygen-free and include a fluorocarbon reactant, a nitrogen reactant and an optional carrier gas, the fluoroca... | 12/25/2007 |
| 7311850 | Method of forming patterned thin film and method of fabricating micro device In a method of forming a patterned thin film, first, an etching stopper film and a film to be patterned are formed in this order on a base layer. Next, a patterned first film is formed on the film to be patterned. Next, a second film is formed over an entire surface... | 12/25/2007 |
| 7309448 | Selective etch process of a sacrificial light absorbing material (SLAM) over a dielectric material A process of selectively etching a sacrificial light absorbing material (SLAM) over a dielectric material, such as carbon doped oxide, on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a hydrofluorocarbon gas, an opti... | 12/18/2007 |
| 7306746 | Critical dimension control in a semiconductor fabrication process A method for controlling a critical dimension in an etched structure comprises the steps of: forming a hard mask above a substrate, measuring a critical dimension of the hard mask, and using the measured hard mask critical dimension to control a critical dimension t... | 12/11/2007 |
| 7307013 | Nonselective unpatterned etchback to expose buried patterned features A method for etching to form a planarized surface is disclosed. Spaced-apart features are formed of a first material, the first material either conductive or insulating. A second material is deposited over and between the first material. The second material is eithe... | 12/11/2007 |
| 7303995 | Method for reducing dimensions between patterns on a photoresist A semiconductor manufacturing method that includes providing a substrate, providing a layer of material over the substrate, providing a layer of photoresist over the material layer, patterning and defining the photoresist layer, depositing a layer of polymer over th... | 12/04/2007 |
| 7300597 | Selective etch process of a sacrificial light absorbing material (SLAM) over a dielectric material A process of selectively etching a sacrificial light absorbing material (SLAM) over a dielectric material, such as carbon doped oxide, on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a hydrofluorocarbon gas, an opti... | 11/27/2007 |
| 7300595 | Method for filling concave portions of concavo-convex pattern and method for manufacturing magnetic recording medium A method for filling concave portions of a concavo-convex pattern by which the concave portions of the concavo-convex pattern can be filled to flatten the surface with reliability, and a method for manufacturing a magnetic recording medium by which a magnetic record... | 11/27/2007 |
| 7297286 | Methods for resist stripping and other processes for cleaning surfaces substantially free of contaminants A method for manufacturing an article having polymeric residue that is to be removed during the manufacture of the article is disclosed. The article is introduced into a controlled environment of a processing tool having one or more processing chambers. Free radical... | 11/20/2007 |
| 7291563 | Method of etching a substrate; method of forming a feature on a substrate; and method of depositing a layer comprising silicon, carbon, and fluorine onto a semiconductor substrate The invention includes methods of etching substrates, methods of forming features on substrates, and methods of depositing a layer comprising silicon, carbon and fluorine onto a semiconductor substrate. In one implementation, a method of etching includes forming a m... | 11/06/2007 |
| 7291559 | Etching method, gate etching method, and method of manufacturing semiconductor devices In a method of manufacturing a semiconductor device, a dummy sample and an actual device are prepared. The dummy sample and the actual device have substantially an identical layer and an identical resist pattern formed on the layer. Then, a dummy discharge is carrie... | 11/06/2007 |
| 7292906 | Formula-based run-to-run control A processing method of processing a substrate is presented that includes: receiving pre-process data, wherein the pre-process data comprises a desired process result and actual measured data for the substrate; determining a required process result, wherein the requi... | 11/06/2007 |
| 7289866 | Plasma processing method and apparatus In a plasma processing method for monitoring data, first and second measurement data are obtained; and a first and a second model are formulated based on the first and the second measurement data. Further, third measurement data is obtained; and weight factors are o... | 10/30/2007 |
| 7273563 | Method for manufacturing a magnetic recording medium A method for manufacturing a magnetic recording medium is provided, which can efficiently manufacture a magnetic recording medium that includes a recording layer formed in a concavo-convex pattern and has good recording and reproduction characteristics. The method i... | 09/25/2007 |
| 7270713 | Tunable gas distribution plate assembly A gas distribution plate assembly and a method for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate assembly includes a tuning plate coupled to a diffuser plate. The tuning plate has a plurality of orifice holes form... | 09/18/2007 |
| 7259104 | Sample surface processing method A surface processing method of a sample having a mask layer that does not contain carbon as a major component formed on a substance to be processed, the substance being a metal, semiconductor and insulator deposited on a silicon substrate, includes the steps of inst... | 08/21/2007 |
| 7256134 | Selective etching of carbon-doped low-k dielectrics The present invention includes a process for selectively etching a low-k dielectric material formed on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a fluorine-rich fluorocarbon or hydrofluorocarbon gas, a nitrogen-c... | 08/14/2007 |
| 7247247 | Selective etching method A selective etching method with lateral protection function is provided. The steps includes: (a) providing a substrate; (b) forming a plurality of tunnels; (c) forming a lateral strengthening structure at a peripheral wall of the tunnels; (d) removing a bottom porti... | 07/24/2007 |
| 7247248 | Method of forming atomic force microscope tips The invention relates to a method for forming silicon atomic force microscope tips. The method includes the steps of depositing a masking layer onto a first layer of doped silicon so that some square or rectangular areas of the first layer of doped silicon are not c... | 07/24/2007 |
| 7247251 | Method for manufacturing a magnetic recording medium A method for manufacturing a magnetic recording medium is provided, which can efficiently manufacture a magnetic recording medium that includes a recording layer formed in a concavo-convex pattern, has a sufficiently flat surface, and provides good recording and rep... | 07/24/2007 |
| 7244368 | Manufacturing process of a magnetic head, magnetic head, pattern formation method A manufacturing method of a magnetic head includes a process for forming a lift-off mask pattern on a magnetoresistance effect element, such that the upper part of the lift-off mask pattern is larger in size than the lower part, a process for forming a couple of ele... | 07/17/2007 |
