Quotables
"To place a man in a multi-stage rocket and project him into the controlling gravitational field of the moon where the passengers can make scientific observations, perhaps land alive, and then return to earth--all that constitutes a wild dream worthy of Jules Verne. I am bold enough to say that such a man-made voyage will never occur regardless of all future advances."
Lee deForest, American radio pioneer ; 1957
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| Number | Title | Issue Date |
| 7776227 | Process for manufacturing micro- and nano- devices A method of depositing or etching a micro- or nano-scale pattern on a work piece is disclosed, including the steps of: (a) placing the work piece in an electrochemical reactor in close proximity to a patterned tool; (b) connecting the work piece such that it is the ... | 08/17/2010 |
| 7758764 | Methods and apparatus for substrate processing A method for processing a substrate in a plasma processing chamber is provided. The substrate is disposed above a chuck and surrounded by an edge ring. The edge ring is electrically isolated from the chuck. The method includes providing first RF power to the chuck. ... | 07/20/2010 |
| 7491344 | Method for etching an object using a plasma and an object etched by a plasma Disclosed herein is a method for etching a face of an object and more particularly a method for etching a rear face of a silicon substrate. The object having a silicon face is positioned so as to be spaced apart from a plasma-generating member by a predetermined int... | 02/17/2009 |
| 7465407 | Plasma processing method and apparatus In a plasma processing method for supplying an electric power to a first electrode, making a first electrode have a ground potential, or making a first electrode have a floating potential while supplying gas to a plasma source arranged in a vicinity of an object to ... | 12/16/2008 |
| 7439188 | Reactor with heated and textured electrodes and surfaces A reactor for processing semiconductor wafers with electrodes and other surfaces that can be one of heated, textured and/or pre-coated in order to facilitate adherence of materials deposited thereon, and eliminate the disadvantages resulting from the spaulding, flak... | 10/21/2008 |
| 7435687 | Plasma processing method and plasma processing device The invention provides a plasma processing method and plasma processing device for manufacturing semiconductor devices in which the number of foreign particles being adhered to the wafer is reduced greatly and the yield is improved. In a plasma processing device hav... | 10/14/2008 |
| 7416677 | Exhaust assembly for plasma processing system and method An exhaust assembly is described for use in a plasma processing system, whereby secondary plasma is formed in the exhaust assembly between the processing space and chamber exhaust ports in order to reduce plasma leakage to a vacuum pumping system, or improve the uni... | 08/26/2008 |
| 7393460 | Plasma processing method and plasma processing apparatus The plasma processing method comprises the step of removing an organic material film forming an upper layer relative to a patterned SiOCH series film by the processing with a plasma of a process gas containing an O2 gas, wherein the plasma has an O2 | 07/01/2008 |
| 7390751 | Dry etching method and apparatus for performing dry etching A dry etching method includes loading a wafer on a lower electrode having at least two cooling paths. Cooling fluids having different temperatures are supplied to each of the cooling paths of the lower electrode so that the multiple cooling paths are at different te... | 06/24/2008 |
| 7372582 | Method for fabrication semiconductor device The object of this invention is to provide a method for fabricating a semiconductor device in which the yield and productivity are improved. In the method for fabricating a semiconductor device according to the invention, a plasma etching system is prepared which in... | 05/13/2008 |
| 7365019 | Atmospheric process and system for controlled and rapid removal of polymers from high aspect ratio holes A system that generates an intense hot gas stream is described to etch a polymer on a substrate used in the manufacture of semiconductor and MEMS devices with no surface damage. The etching process is particularly useful to remove a polymer from relatively high aspe... | 04/29/2008 |
| 7359177 | Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output A plasma reactor has a dual frequency plasma RF bias power supply furnishing RF bias power comprising first and second frequency components, f(1), f(2), respectively, and an RF power path having an input end coupled to the plasma RF bias power supply a... | 04/15/2008 |
| 7350476 | Method and apparatus to determine consumable part condition A system for monitoring a condition of a consumable component in a substrate processing system that includes a tapered plug having a first axis, a second axis that intersects the first axis, a top portion with first width, a bottom portion with a second width, and s... | 04/01/2008 |
| 7342361 | Plasma source A plasma source is described. The source includes a reactive impedance element formed from a plurality of electrodes. By providing such a plurality of electrodes and powering adjacent electrodes out of phase with one another, it is possible to improve the characteri... | 03/11/2008 |
| 7335278 | Plasma processing apparatus and plasma processing method An electrostatic chuck 108 is provided on a lower electrode 106 provided inside a processing chamber 102 of an etching apparatus 100, and a conductive inner ring body 112a and an insulating outer ring body 112b | 02/26/2008 |
| 7335601 | Method of processing an object and method of controlling processing apparatus to prevent contamination of the object A method of manufacture includes processing an object in a chamber and subsequently generating an electrical force of attraction to float contaminants off of a region adjacent the processed object before the object is unloaded from the chamber. The object may be pro... | 02/26/2008 |
| 7314574 | Etching method and apparatus An etching apparatus comprises a workpiece holder (21) for holding a workpiece (X), a plasma generator (10, 20) for generating a plasma (30) in a vacuum chamber (3), an orifice electrode (4) disposed between the workpiece holder ( | 01/01/2008 |
| 7309448 | Selective etch process of a sacrificial light absorbing material (SLAM) over a dielectric material A process of selectively etching a sacrificial light absorbing material (SLAM) over a dielectric material, such as carbon doped oxide, on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a hydrofluorocarbon gas, an opti... | 12/18/2007 |
| 7306829 | RF plasma reactor having a distribution chamber with at least one grid A plasma reactor has a reactor vessel and a pair of electrodes in the form of spaced apart and oppositely disposed metallic surfaces defining therebetween a plasma discharge space. At least one of the metallic surfaces is the surface of a metallic plate having a plu... | 12/11/2007 |
| 7294242 | Collimated and long throw magnetron sputtering of nickel/iron films for magnetic recording head applications An apparatus and method for sputter depositing a magnetic film on a substrate to produce a magnetic device such as magnetic recording heads for reading digital information from a storage medium. The apparatus of the invention includes a sputtering chamber containing... | 11/13/2007 |
| 7294245 | Cover ring and shield supporting a wafer ring in a plasma reactor A magnetic dipole ring assembly positioned inside a vacuum chamber and around a wafer being sputter deposited with a ferromagnetic material such as NiFe or other magnetic materials so that the material is deposited with a predetermined magnetization direction in the... | 11/13/2007 |
| 7291559 | Etching method, gate etching method, and method of manufacturing semiconductor devices In a method of manufacturing a semiconductor device, a dummy sample and an actual device are prepared. The dummy sample and the actual device have substantially an identical layer and an identical resist pattern formed on the layer. Then, a dummy discharge is carrie... | 11/06/2007 |
| 7279429 | Method to improve ignition in plasma etching or plasma deposition steps In one embodiment, the present invention relates to a method for increasing the ignition reliability of a plasma in a plasma reactor, the method comprising: supplying a source gas to the plasma reactor, the source gas comprising: (a) at least one reactive compound; ... | 10/09/2007 |
| 7279845 | Plasma processing method and apparatus A method and apparatus for processing a target substance by using atmospheric-pressure plasma produced by a composite waveform generated by superimposing a high-frequency sine wave and a high-frequency square wave at the same or substantially the same frequency and ... | 10/09/2007 |
| 7270713 | Tunable gas distribution plate assembly A gas distribution plate assembly and a method for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate assembly includes a tuning plate coupled to a diffuser plate. The tuning plate has a plurality of orifice holes form... | 09/18/2007 |
| 7267724 | Thin-film disposition apparatus A dividing plate for a thin-film deposition apparatus divides the interior of the vacuum reaction chamber into a plasma discharge space and a film deposition process space, by fixing or connecting a plurality of laminated plates together by securely bonding them ove... | 09/11/2007 |
| 7264850 | Process for treating a substrate with a plasma A process for depositing a diamond-like carbon film, which comprises providing a means for generating a sheet-like beam-type plasma region inside a vacuum vessel for depositing the diamond-like carbon film, and depositing the film on a substrate being moved through ... | 09/04/2007 |
| 7259105 | Methods of fabricating gate spacers for semiconductor devices A method of fabricating the gate spacers of semiconductor devices is disclosed. An example method forms a gate on a semiconductor substrate, deposits a buffer oxide layer and a nitride layer sequentially on the whole semiconductor substrate including the gate, and f... | 08/21/2007 |
| 7247888 | Film forming ring and method of manufacturing semiconductor device There is here disclosed a film forming ring including a ring main body being made of an insulating material and formed in an annular shape along an edge of a substrate on which a film forming process by using a material gas in a plasma state is applied, and an inner... | 07/24/2007 |
| 7247218 | Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power A plasma reactor process measurement instrument includes an input phase processor receiving wafer bias voltage, current and power and computing an input impedance, an input current and an input voltage to the transmission line; a transmission line processor for comp... | 07/24/2007 |
| 7244334 | Apparatus used in reshaping a surface of a photoresist The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is fabricated using the patterned photoresist. In addition, the method may ... | 07/17/2007 |
| 7229522 | Substrate processing apparatus and substrate processing method A substrate processing apparatus removes resist films formed on wafers by holding the wafers in a processing vessel and exposing the wafers to a mixed gaseous fluid of steam and an ozone-containing gas into the processing vessel. The inner surfaces, to be exposed to... | 06/12/2007 |
| 7223699 | Plasma etch reactor and method A plasma etch reactor 20 includes a upper electrode 24, a lower electrode 24, a peripheral ring electrode 26 disposed therebetween. The upper electrode 24 is grounded, the peripheral electrode 26 is powered by a high frequen... | 05/29/2007 |
| 7223446 | Plasma CVD apparatus and dry cleaning method of the same In a parallel flat plate type plasma CVD apparatus, plasma damage of constituent parts in a reaction chamber due to irregularity of dry cleaning in the reaction chamber is reduced and the cost is lowered. In the parallel flat plate type plasma CVD apparatus in which... | 05/29/2007 |
| 7223700 | Method for fabricating fine features by jet-printing and surface treatment A method and system for masking a surface to be etched is described. The method includes the operation of heating a phase-change masking material and using a droplet source to eject droplets of a masking material for deposit on a thin-film or other substrate surface... | 05/29/2007 |
| 7220937 | Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination A gas distribution ceiling electrode for use as a capacitive source power applicator and gas distribution showerhead in a plasma reactor includes a metal base and a process-compatible protective layer on the interior surface of he electrode having a dopant impurity ... | 05/22/2007 |
| 7207763 | Semiconductor manufacturing system and wafer holder for semiconductor manufacturing system A semiconductor manufacturing system and wafer holder for a semiconductor manufacturing system which prevents a semiconductor wafer from being exposed to a process reaction and which includes a reaction tube for providing a sealed process space and a dual boat and w... | 04/24/2007 |
| 7201823 | High throughput plasma treatment system A method for the plasma treatment of parts. The method includes sending loading signals from an electronic control to a transfer mechanism and loading the parts from a position outside of the treatment chamber to a plurality of treatment positions within the treatme... | 04/10/2007 |
| 7196283 | Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface An overhead gas distribution electrode forming at least a portion of the ceiling of a plasma reactor has a bottom surface facing a processing zone of the reactor. The electrode includes a gas supply manifold for receiving process gas at a supply pressure at a top po... | 03/27/2007 |
| 7185602 | Ion implantation ion source, system and method An ion implantation device for vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system and delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source. The ion implantation device i... | 03/06/2007 |
