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| Number | Title | Issue Date |
| 8048329 | Methods for implementing highly efficient plasma traps A method for minimizing microwave leakage into processing chamber of a microwave plasma system is provided. The method includes securing plasma traps to a plasma tube assembly, which is a cylindrical structure positioned upstream from the processing chamber and has ... | 11/01/2011 |
| 8048328 | Method for shaping a magnetic field in a magnetic field-enhanced plasma reactor Methods for rotating a magnetic field in a process chamber is provided herein. In one embodiment, a method for rotating a magnetic field in a process chamber includes forming a magnetic field having a primary shape; changing the primary shape to at least two sequent... | 11/01/2011 |
| 8003000 | Plasma processing, deposition and ALD methods A plasma processing method includes providing a substrate in a processing chamber, the substrate having a surface, and generating a plasma in the processing chamber. The plasma provides at least two regions that exhibit different plasma densities. The method include... | 08/23/2011 |
| 7883633 | Method for shaping a magnetic field in a magnetic field-enhanced plasma reactor Methods for rotating a magnetic field in a process chamber is provided herein. In one embodiment, a method for rotating a magnetic field in a process chamber includes forming a magnetic field having a primary shape; changing the primary shape to at least two sequent... | 02/08/2011 |
| 7432209 | Plasma dielectric etch process including in-situ backside polymer removal for low-dielectric constant material A plasma etch process with in-situ backside polymer removal begins with a workpiece having a porous or non-porous carbon-doped silicon oxide dielectric layer and a photoresist mask on a surface of the workpiece. The workpiece is clamped onto an electrostatic chuck i... | 10/07/2008 |
| 7341922 | Dry etching method, fabrication method for semiconductor device, and dry etching apparatus When etching is performed with respect to a silicon-containing material by using a dry etching apparatus having a dual power source, the application of bias power is initiated before oxidization proceeds at a surface of the silicon-containing material. Specifically,... | 03/11/2008 |
| 7291559 | Etching method, gate etching method, and method of manufacturing semiconductor devices In a method of manufacturing a semiconductor device, a dummy sample and an actual device are prepared. The dummy sample and the actual device have substantially an identical layer and an identical resist pattern formed on the layer. Then, a dummy discharge is carrie... | 11/06/2007 |
| RE39895 | Semiconductor integrated circuit arrangement fabrication method To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited t... | 10/23/2007 |
| 7268083 | Plasma etching apparatus and plasma etching process A plasma etching apparatus includes: a chamber capable of reducing pressure; a substrate support provided inside the chamber to place a substrate; a first electrode which is arranged outside and in proximity to the chamber and to which high frequency power is applie... | 09/11/2007 |
| 7256134 | Selective etching of carbon-doped low-k dielectrics The present invention includes a process for selectively etching a low-k dielectric material formed on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a fluorine-rich fluorocarbon or hydrofluorocarbon gas, a nitrogen-c... | 08/14/2007 |
| 7232762 | Method for forming an improved low power SRAM contact A method of forming contact openings in a semiconductor device including providing a semiconducting substrate; forming an etch stop layer on said semiconducting substrate; forming a dielectric layer on said etch stop layer; forming a bottom anti-reflective coating (... | 06/19/2007 |
| 7210424 | High-density plasma processing apparatus A high-density plasma processing apparatus includes a processing chamber, having a susceptor for supporting an object to be processed positioned therein and a dielectric window positioned on the processing chamber to form an upper surface of the processing chamber. ... | 05/01/2007 |
| 7188033 | Method and system of computing and rendering the nature of the chemical bond of hydrogen-type molecules and molecular ions Provided is a system of computing and rendering a nature of a chemical bond based on physical, Maxwellian solutions of charge, mass, and current density functions of hydrogen-type molecules and molecular ions. The system includes a processor for processing Maxwellia... | 03/06/2007 |
| 7170027 | Microwave plasma processing method A microwave plasma processing method is provided which enables a uniform thin film layer to be formed on a surface to be processed and which enables a short time processing. In the microwave plasma processing method, microwaves are introduced into a plasma processin... | 01/30/2007 |
| 7166965 | Waveguide and microwave ion source equipped with the waveguide A waveguide of the present invention comprises a waveguide main body made of a material selected from a boron nitride or an aluminum oxide, and a thin film made of a titanium nitride to cover an outer peripheral surface of the waveguide main body. The waveguide of t... | 01/23/2007 |
| 7108751 | Method and apparatus for determining consumable lifetime A plasma processing device comprising a gas injection system is described, wherein the gas injection system comprises a gas injection assembly body, a consumable gas inject plate coupled to the gas injection assembly body, and a pressure sensor coupled to a gas inje... | 09/19/2006 |
| 7105208 | Methods and processes utilizing microwave excitation The invention includes methods and processes in which microwave radiation is utilized to activate at least one component within a reaction chamber during deposition of a material over a substrate within the reaction chamber. ... | 09/12/2006 |
| 7094316 | Externally excited torroidal plasma source A plasma reactor for processing a workpiece, including an enclosure defining a vacuum chamber, a workpiece support within the enclosure facing an overlying portion of the enclosure, the enclosure having at least first and second openings therethrough near generally ... | 08/22/2006 |
| 7048869 | Plasma processing apparatus and a plasma processing method In an oxide film etching process, a plasma having a suitable ratio of CF3, CF2, CF, F is necessary, and there is a problem in that the etching characteristic fluctuates with a temperature fluctuation of the etching chamber. Using a UHF type ECR... | 05/23/2006 |
| 7033514 | Method and apparatus for micromachining using a magnetic field and plasma etching This invention relates to a method and apparatus for forming a micromachined device, where a workpiece is plasma etched to define a microstructure. The plasma etching is conducted in the presence of a magnetic field, which can be generated and manipulated by an elec... | 04/25/2006 |
| 7001698 | Method and apparatus for dry-etching half-tone phase-shift films, half-tone phase-shift photomasks and method for the preparation thereof, and semiconductor circuits and method for the fabrication thereof A chromium-containing half-tone phase-shift photomask comprising coarse and dense patterns coexisting in a plane is prepared by a series of pattern-forming steps including forming a resist layer on a photomask blank, exposing and patterning said resist layer, develo... | 02/21/2006 |
| 6955960 | Decoupling capacitor for high frequency noise immunity Systems and methods are provided for an on-chip decoupling device and method. One aspect of the present subject matter is a capacitor. One embodiment of the capacitor includes a substrate, a high K dielectric layer doped with nano crystals disposed on the substrate,... | 10/18/2005 |
| 6946053 | Plasma reactor This invention is a hardware modification which permits greater uniformity of etching to be achieved in a high-density-source plasma reactor (i.e., one which uses a remote source to generate a plasma, and which also uses high-frequency bias power on the wafer chuck)... | 09/20/2005 |
| 6943350 | Methods and apparatus for electron beam inspection of samples Methods and apparatus are providing for inspecting a test sample. An electron beam is tuned to cause secondary electron emissions upon scanning a target area. Reactive substances are introduced to etch and remove materials and impurities from the scan target. Residu... | 09/13/2005 |
| 6920267 | Optical coupling device and manufacturing method thereof When a guide groove for a lens is formed in a single crystal silicon substrate, a rectangular parallelepiped opening is formed having a width smaller than a desired width of the guide groove and is then processed by wet etching using a KOH solution. Two {111} planes... | 07/19/2005 |
| 6919272 | Method for patterning densely packed metal segments in a semiconductor die and related structure A method of patterning a metal layer in a semiconductor die comprises forming a mask on the metal layer to define an open region and a dense region. The method further comprises etching the metal layer at a first etch rate to form a number of metal segments in the o... | 07/19/2005 |
| 6899817 | Device and method for etching a substrate using an inductively coupled plasma A method and a suitable device for carrying out this method is proposed, for etching a substrate (10), especially a silicon element, with the aid of an inductively coupled plasma (14). For this purpose, a high frequency electromagnetic alternating fiel... | 05/31/2005 |
| 6809019 | Method for producing a semiconductor structure, and use of the method A method for producing a semiconductor structure includes applying at least one first layer, etching the first layer using a masking layer such that fences are produced, and, after removal of the masking layer and application of an auxiliary layer, the auxiliary lay... | 10/26/2004 |
| 6673722 | Microwave enhanced CVD system under magnetic field An improved chemical vapor deposition or etching is shown in which cyclotron resonance and photo or plasma CVD cooperate to deposit a layer with high performance at a high deposition speed. The high deposition speed is attributed to the cyclotron resonanc... | 01/06/2004 |
| 6652763 | Method and apparatus for large-scale diamond polishing A method and apparatus for the polishing of diamond surfaces, wherein the diamond surface is subjected to plasma-enhanced chemical etching using an atomic oxygen polishing plasma source, are disclosed. In the apparatus, a magnetic filter passes a plume of... | 11/25/2003 |
| 6573190 | Dry etching device and dry etching method A dry etching apparatus and method which can uniformly and stably generate a high-density plasma over a wide range, and can cope with increase of wafer diameter and making the pattern finer in etch processing of the fine pattern of a semiconductor device.... | 06/03/2003 |
| 6561198 | Method and installation for treating a metal part surface In this method for the surface treatment of a metal part (12) for the purpose of deoxidizing it and/or cleaning it, a sealed chamber (16), in which the part to be treated is placed, is filled with a low-pressure reducing gas mixture, a static magnetic fie... | 05/13/2003 |
| 6531069 | Reactive Ion Etching chamber design for flip chip interconnections RIE processing chambers includes arrangements of gas outlets which force gas-flow-shadow elimination. Means are provided to control and adjust the direction of gases to the outlet to modify and control the direction of plasma flow at the wafer surface dur... | 03/11/2003 |
| 6526996 | Dry clean method instead of traditional wet clean after metal etch A dry cleaning method for use in semiconductor fabrication, including the following steps. An etched metallization structure is provided and placed in a processing chamber. The etched metallization structure is cleaned by introducing a fluorine containing... | 03/04/2003 |
| 6527968 | Two-stage self-cleaning silicon etch process A process for etching a substrate 25 in an etching chamber 105, and simultaneously removing etch residue deposited on the surfaces of the walls 110 and components of the etching chamber 105. In one version, a two-stage method of opening a nitride mask lay... | 03/04/2003 |
| 6506687 | Dry etching device and method of producing semiconductor devices A technique of dry etching the surface of a wafer by using a dry etching apparatus in which the distance between a wafer and a surface facing the wafer is set to the half or less of the diameter of the wafer is disclosed. Even in the case of using, especi... | 01/14/2003 |
| 6506686 | Plasma processing apparatus and plasma processing method In a plasma processing apparatus that has a vacuum chamber, a process gas supply means of supply gas to a processing chamber, an electrode to hold a sample inside said vacuum chamber, a plasma generator installed in said vacuum chamber opposite to said sa... | 01/14/2003 |
| 6436304 | Plasma processing method A plasma processing method using helicon wave excited plasma which makes it possible to control a degree of dissociation for a process gas by controlling the source power. In the plasma processing method using helicon wave excited plasma, the source power... | 08/20/2002 |
| 6402974 | Method for etching polysilicon to have a smooth surface In accordance with the present invention, during a polysilicon etch back, a controlled amount of oxygen (O2) is added to the plasma generation feed gases, to reduce pitting of the etched back polysilicon surface. The plasma etchant is generated... | 06/11/2002 |
| 6383403 | Dry etching method A substrate to be etched is subjected to dry etching by using a dry etching gas containing a perfluorocycloolefin while a plasma with a high density region of at least 1010 /cm3 is generated. As the perfluorocycloolefin, those having... | 05/07/2002 |
