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| Number | Title | Issue Date |
| 8187485 | Plasma processing apparatus including etching processing apparatus and ashing processing apparatus and plasma processing method using plasma processing apparatus A diameter of a mounting unit of the stage of an ashing processing apparatus is less than a diameter of a mounting unit of the stage of an etching processing apparatus, and the diameter of the mounting unit of the stage of the etching processing apparatus is less th... | 05/29/2012 |
| 7465406 | Method of exposing a substrate to a surface microwave plasma, etching method, deposition method, surface microwave plasma generating apparatus, semiconductor substrate etching apparatus, semiconductor substrate deposition apparatus, and microwave plasma generating antenna assembly In certain implementations, methods and apparatus include an antenna assembly having at least two overlapping and movable surface microwave plasma antennas. The antennas have respective pluralities of microwave transmissive openings formed therethrough. At least som... | 12/16/2008 |
| 7393460 | Plasma processing method and plasma processing apparatus The plasma processing method comprises the step of removing an organic material film forming an upper layer relative to a patterned SiOCH series film by the processing with a plasma of a process gas containing an O2 gas, wherein the plasma has an O2 | 07/01/2008 |
| 7375947 | Method of feedback control of ESC voltage using wafer voltage measurement at the bias supply output In a plasma reactor having an electrostatic chuck, wafer voltage is determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage is used to accurately contro... | 05/20/2008 |
| 7374696 | Method and apparatus for removing a halogen-containing residue The invention provides for a method and integrated system for removing a halogen-containing residue from a substrate comprising etching the substrate, heating the substrate and exposing the heated substrate to a plasma that removes the halogen-containing residue. | 05/20/2008 |
| 7357115 | Wafer clamping apparatus and method for operating the same A wafer clamping apparatus is provided to secure a wafer within a chamber during wafer processing. The wafer clamping apparatus creates a pressure differential between a top surface and a bottom surface of the wafer. The pressure differential serves to pull the wafe... | 04/15/2008 |
| 7351291 | Semiconductor processing system A semiconductor processing system includes a load lock chamber and first to third process chambers connected to an airtight transfer chamber. The second process chamber is disposed below the first process chamber and overlaps with the first process chamber. The thir... | 04/01/2008 |
| 7341922 | Dry etching method, fabrication method for semiconductor device, and dry etching apparatus When etching is performed with respect to a silicon-containing material by using a dry etching apparatus having a dual power source, the application of bias power is initiated before oxidization proceeds at a surface of the silicon-containing material. Specifically,... | 03/11/2008 |
| 7335601 | Method of processing an object and method of controlling processing apparatus to prevent contamination of the object A method of manufacture includes processing an object in a chamber and subsequently generating an electrical force of attraction to float contaminants off of a region adjacent the processed object before the object is unloaded from the chamber. The object may be pro... | 02/26/2008 |
| 7322368 | Plasma cleaning gas and plasma cleaning method A plasma cleaning gas for CVD chamber is a gas for cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber after film forming treatment on a substrate by a plasma CVD apparatus. The cl... | 01/29/2008 |
| 7320941 | Plasma stabilization method and plasma apparatus There is disclosed a plasma technique in which a plasma generation technique frequently used in various fields including a semiconductor manufacturing process is used, and generation of plasma instability (high-speed impedance change of a plasma) can efficiently be ... | 01/22/2008 |
| RE39895 | Semiconductor integrated circuit arrangement fabrication method To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited t... | 10/23/2007 |
| 7273580 | Ferromagnetic resonance excitation and its use for heating substrates that are filled with particles Process for heating a substrate, which contains, relative to the total weight of the substrate, 0.1 to 70 wt. % of metallic, magnetic, ferrimagnetic, ferromagnetic, antiferromagnetic or superparamagnetic particles having an average particle size of between 1 and 500... | 09/25/2007 |
| 7262428 | Strained Si/SiGe/SOI islands and processes of making same A process of making a strained silicon-on-insulator structure is disclosed. A recess is formed in a substrate to laterally isolate an active area. An undercutting etch forms a bubble recess under the active area to partially vertically isolate the active area. A the... | 08/28/2007 |
| 7259104 | Sample surface processing method A surface processing method of a sample having a mask layer that does not contain carbon as a major component formed on a substance to be processed, the substance being a metal, semiconductor and insulator deposited on a silicon substrate, includes the steps of inst... | 08/21/2007 |
| 7232762 | Method for forming an improved low power SRAM contact A method of forming contact openings in a semiconductor device including providing a semiconducting substrate; forming an etch stop layer on said semiconducting substrate; forming a dielectric layer on said etch stop layer; forming a bottom anti-reflective coating (... | 06/19/2007 |
| 7214628 | Plasma gate oxidation process using pulsed RF source power A method of fabricating a gate of a transistor device on a semiconductor substrate, includes the steps of placing the substrate in a vacuum chamber of a plasma reactor and introducing into the chamber a process gas that includes oxygen while maintaining a vacuum pre... | 05/08/2007 |
| 7189313 | Substrate support with fluid retention band An apparatus and method for supporting a substrate is provided. In one embodiment, an apparatus for supporting a substrate includes a body having a band extending therefrom. The band is adapted to retain a fluid on the body thereby forming a shallow processing bath ... | 03/13/2007 |
| 7170027 | Microwave plasma processing method A microwave plasma processing method is provided which enables a uniform thin film layer to be formed on a surface to be processed and which enables a short time processing. In the microwave plasma processing method, microwaves are introduced into a plasma processin... | 01/30/2007 |
| 7159536 | Device and method for generating a local by micro-structure electrode dis-charges with microwaves Device for producing a plasma, in particular for treating surfaces, for chemically reacting gases, or for producing light, by way of microstructure electrode discharges, using a device for producing plasma having at least one guide structure. A microwave generator w... | 01/09/2007 |
| 7141514 | Selective plasma re-oxidation process using pulsed RF source power A transistor gate selective re-oxidation process includes the steps of introducing into the vacuum chamber containing the semiconductor substrate a process gas that includes oxygen while maintaining a vacuum pressure in the chamber. An oxide insulating layer on the ... | 11/28/2006 |
| 7111629 | Method for cleaning substrate surface There is provided a surface cleaning apparatus and method using plasma to remove a native oxide layer, a chemical oxide layer, and a damaged portion from a silicon substrate surface, and contaminants from a metal surface. A mixture of H2 and N2 | 09/26/2006 |
| 7097782 | Method of exposing a substrate to a surface microwave plasma, etching method, deposition method, surface microwave plasma generating apparatus, semiconductor substrate etching apparatus, semiconductor substrate deposition apparatus, and microwave plasma generating antenna assembly In certain implementations, methods and apparatus include an antenna assembly having at least two overlapping and movable surface microwave plasma antennas. The antennas have respective pluralities of microwave transmissive openings formed therethrough. At least som... | 08/29/2006 |
| 7097779 | Processing system and method for chemically treating a TERA layer A processing system and method for chemically treating a TERA layer on a substrate. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate. In one embodiment, the system for processing a TERA layer includes a plasma-enhanced chem... | 08/29/2006 |
| 7088047 | Inductively coupled plasma generator having low aspect ratio An inductively coupled plasma generator having a lower aspect ratio reaction gas, comprising a chamber having a gas inlet through which a reaction gas is supplied, a vacuum pump for maintaining the inside of the chamber vacuum and a gas outlet for exhausting the rea... | 08/08/2006 |
| 7048869 | Plasma processing apparatus and a plasma processing method In an oxide film etching process, a plasma having a suitable ratio of CF3, CF2, CF, F is necessary, and there is a problem in that the etching characteristic fluctuates with a temperature fluctuation of the etching chamber. Using a UHF type ECR... | 05/23/2006 |
| 7037846 | Method and apparatus for micro-jet enabled, low energy ion generation and transport in plasma processing A method for creating and transporting low-energy ions for use in plasma processing of a semiconductor wafer is disclosed. In an exemplary embodiment of the invention, the method includes generating plasma from a gas species to produce a plasma exhaust. The plasma e... | 05/02/2006 |
| 7025895 | Plasma processing apparatus and method A plasma processing apparatus and method are capable of performing etching with high precision without damaging the semiconductor wafer. The plasma processing apparatus has a plasma generation power supply for generating a plasma within a processing chamber; a high-... | 04/11/2006 |
| 7025831 | Apparatus for surface conditioning Apparatus and process for conditioning a generally planar substrate, contained in a chamber isolatable from the ambient environment and fed with a conditioning gas which includes reactive gas. The apparatus includes a support for supporting the substrate in the cham... | 04/11/2006 |
| 7014788 | Surface treatment method and equipment A method for treating material surface utilizing atomic hydrogen. The method includes utilizing atomic hydrogen by mixing halogen and/or halide to a gas which is used for generating, atomic hydrogen in the plasma. The present method also includes utilizing a charact... | 03/21/2006 |
| 7001698 | Method and apparatus for dry-etching half-tone phase-shift films, half-tone phase-shift photomasks and method for the preparation thereof, and semiconductor circuits and method for the fabrication thereof A chromium-containing half-tone phase-shift photomask comprising coarse and dense patterns coexisting in a plane is prepared by a series of pattern-forming steps including forming a resist layer on a photomask blank, exposing and patterning said resist layer, develo... | 02/21/2006 |
| 6991739 | Method of photoresist removal in the presence of a dielectric layer having a low k-value A method of photoresist removal is described. A substrate is located in a processing chamber. A mixture of gases is excited, the mixture comprising a majority component of a reducing process gas and a minority component of between 0.1% and 10% by volume of an oxidiz... | 01/31/2006 |
| 6981508 | On-site cleaning gas generation for process chamber cleaning Provided herein is a method for cleaning a process chamber for semiconductor and/or flat panel display manufacturing. This method comprises the steps of converting a non-cleaning feed gas to a cleaning gas in a remote location and then delivering the cleaning gas to... | 01/03/2006 |
| 6967170 | Methods of forming silicon nitride spacers, and methods of forming dielectric sidewall spacers The invention includes a method of patterning a material over a semiconductive substrate, comprising: a) forming a layer of first material against a second material and over the substrate, the substrate comprising a surface having a center and an edge; b) first etch... | 11/22/2005 |
| 6965115 | Airtight processing apparatus, airtight processing method, and electron beam processing apparatus An airtight processing apparatus comprises a chamber having a side wall and a bottom wall airtightly fixed to the side wall, and a bed supported inside the chamber by the side wall with a gap from the bottom wall. ... | 11/15/2005 |
| 6946053 | Plasma reactor This invention is a hardware modification which permits greater uniformity of etching to be achieved in a high-density-source plasma reactor (i.e., one which uses a remote source to generate a plasma, and which also uses high-frequency bias power on the wafer chuck)... | 09/20/2005 |
| 6942813 | Method of etching magnetic and ferroelectric materials using a pulsed bias source A method for etching magnetic and ferroelectric materials using a pulsed substrate biasing technique (PSBT) that applies a plurality of processing cycles to the substrate, where each cycle comprises a period of plasma etching without substrate bias and a period of p... | 09/13/2005 |
| 6926190 | Integrated circuit assemblies and assembly methods A method for assembling chips onto substrates includes applying a flux-free, no-flow underfill material. In an embodiment, the method includes removing oxide from interconnects without the use of a flux and applying a flux-free, no-flow underfill. In an embodiment, ... | 08/09/2005 |
| 6923189 | Cleaning of CVD chambers using remote source with cxfyoz based chemistry A method and apparatus for cleaning a processing chamber are provided. The cleaning method includes the use of a remote plasma source to generate reactive species and an in situ RF power to generate or regenerate reactive species. The reactive species are generated ... | 08/02/2005 |
| 6918352 | Method for producing coated workpieces, uses and installation for the method A system and a method produce workpieces coated by PECVD with a quality sufficient for epitaxy. Included are a vacuum recipient, a plasma discharge source operationally connected to the vacuum recipient and a workpiece holder within the vacuum recipient, said plasma... | 07/19/2005 |
