Class 216/67 - Using plasma

Subclass of Class 216 - Etching a substrate: processes
Definition: Process wherein the energy source is a plasma.
No. of patents: 2267
Last issue date: 05/29/2012

«First «Previous1 2 3 4 5 6 7 8 9 10 11 Next»Last»

Number	Title	Issue Date
8187484	Down-stream plasma etching with deflectable radical stream The invention relates to a process for etching a substrate (3) in an etching chamber (1) with a plasma ignited outside of the etching chamber (1). The process is characterized in that during the etching process at least temporarily at least one ...	05/29/2012
8173036	Plasma processing method and apparatus A plasma processing method includes the steps of etching the target object with a CF-based processing gas by using a patterned resist film as a mask, removing deposits accumulated inside a processing chamber during the step of etching the target object by using a pr...	05/08/2012
8123969	Process for removing high stressed film using LF or HF bias power and capacitively coupled VHF source power with enhanced residue capture A method of fabricating multilayer interconnect structures on a semiconductor wafer uses an interior surface of a metal lid that has been roughed to a surface roughness in excess of RA 2000 with a reentrant surface profile. The metal lid is installed as the ceiling ...	02/28/2012
8088296	Plasma processing device and plasma processing method The present invention prevents drop in the function of a plasma processing device caused by reduction of a plasma generating chamber by reductive plasma that is generated from the introduced process gas, and extends the life of members which are in contact with redu...	01/03/2012
8083963	Removal of process residues on the backside of a substrate A substrate is processed in a process chamber comprising a substrate support having a receiving surface for receiving a substrate so that a front surface of the substrate is exposed within the chamber. An energized process gas is used to process the front surface of...	12/27/2011
8075790	Film removal method and apparatus A film removal method and apparatus for removing a film from a substrate are disclosed. The method comprises the steps of disposing a plasma generator and a sucking apparatus over the substrate, projecting a plasma beam from the plasma generator onto the film obliqu...	12/13/2011
8066895	Method to control uniformity using tri-zone showerhead Embodiments of the present invention provide apparatus and method for processing a substrate with increased uniformity. One embodiment of the present invention provides an apparatus for processing a substrate. The apparatus comprises a chamber body defining a proces...	11/29/2011
8052887	Substrate processing apparatus When plasma processing is finished, a gate valve 13a is closed and cleaning gas is ejected from holes 121a of a shower plate 121, and at the same time, a microwave is generated from a microwave generator 101. Further, at thi...	11/08/2011
8021565	Surface treatment method, etching method, and method for manufacturing electronic device A surface treatment method includes: removing a fluorocarbon-containing reaction product from a surface of a workpiece by oxygen gas plasma processing. The workpiece includes a plurality of layers. The fluorocarbon-containing reaction product is deposited by success...	09/20/2011
7988873	Method of forming a mask pattern for fabricating a semiconductor device A method of forming a mask pattern for fabricating a semiconductor device. A first region and a second region, having an intersecting third region, are defined in the semiconductor substrate. An inorganic mask layer is etched in the first region to a predetermined t...	08/02/2011
7988874	Method of fabricating semiconductor device and synchronous pulse plasma etching equipment for the same Provided are a method of fabricating a semiconductor device and synchronous pulse plasma etching equipment for the same. The method includes outputting a first radio frequency (RF) power and a control signal and outputting a second RF power. The first RF power is pu...	08/02/2011
7988872	Method of operating a capacitively coupled plasma reactor with dual temperature control loops In a plasma reactor having an electrostatic chuck with an electrostatic chuck top surface for supporting a workpiece, thermal transfer medium flow channels in the interior of the electrostatic chuck, a method for controlling temperature of the workpiece during plasm...	08/02/2011
7981306	Supplying RF power to a plasma process Generating drive signals of at least two RF power generators which supply RF power to a plasma process, in which at least two drive signals, each driving one RF power generator, are generated in an RF generator driver. Each drive signal is generated by a respective ...	07/19/2011
7981307	Method and apparatus for shaping gas profile near bevel edge A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a p...	07/19/2011
7976716	Semiconductor device manufacturing method A method of using a heat exchanger efficiently and uniformly to cool or heats portions to be controlled to a prescribed temperature, and then continuously carry out stable processing. The heat exchanger is constructed by arranging partition walls between two plates ...	07/12/2011
7967997	Plasma etching method, plasma etching apparatus, control program and computer-readable storage medium A plasma etching method includes: plasma etching a silicon oxide film to be etched that is positioned under a multi-layer resist mask by using the multi-layer resist mask formed on a substrate to be processed; and plasma etching a glass based film positioned under t...	06/28/2011
7967996	Process for wafer backside polymer removal and wafer front side photoresist removal A process is provided for removing polymer from a backside of a workpiece and/or photoresist from a front side of the workpiece. For backside polymer removal, the wafer is positioned near the ceiling to above a localized or remote plasma source having a side outlet ...	06/28/2011
7955515	Method of plasma etching transition metal oxides A method of plasma etching transition metal oxide thin films using carbon monoxide as the primary source gas. This permits carbonyl chemistries to be used at ambient temperature, without heating. ...	06/07/2011
7955516	Etching of nano-imprint templates using an etch reactor Methods for etching a metal layer using an imprinted resist material are provided. In one embodiment, a method for processing a photolithographic reticle includes providing a reticle having a metal photomask layer formed on an optically transparent substrate and an ...	06/07/2011
7955514	Plasma processing apparatus and plasma processing method A plasma processing apparatus having a processing chamber and a sample base, and processing a sample by using plasma generated inside the processing chamber, the processing chamber being located inside a vacuum container, the sample base being located inside the pro...	06/07/2011
7938976	Method of removing graphitic and/or fluorinated organic layers from the surface of a chip passivation layer having Si-containing compounds A method for removing undesirable contaminants from a chip passivation layer surface without creating SiO2 particles on the passivation layer, wherein the undesirable contaminants include graphitic layers and fluorinated layers. The use of N2 p...	05/10/2011
7931820	Dry etching gas and method for dry etching A dry etching gas that comprises a compound having a CF3CF fragment directly bonded to a double bond (provided that the compound is exclusive of CF3CF═CFCF═CF2). Said dry etching gas permits the formation of a pattern such as a c...	04/26/2011
7922925	Method and device for removing layers in some areas of glass plates Substrates with a coating, in particular a metal-containing coating, are freed of coating in some regions, in particular in the edge region, with the aid of plasma directed onto the coated side of the substrate. The width of the region in which the coating is remove...	04/12/2011
7922926	Composition and method for polishing nickel-phosphorous-coated aluminum hard disks The invention provides a chemical-mechanical polishing composition consisting essentially of flumed alumina, alpha alumina, silica, a nonionic surfactant, an additive compound selected from the group consisting of glycine, alanine, iminodiacetic acid, and maleic aci...	04/12/2011
7914692	Methods of generating plasma, of etching an organic material film, of generating minus ions, of oxidation and nitriding A direct current pulse voltage is applied on a treatment gas to generate a discharge plasma. The duty ratio of the direct current pulse voltage is controlled within the range of 0.0001% or more and 8.0% or less. The rise time of the direct current pulse voltage is c...	03/29/2011
7906032	Method for conditioning a process chamber A method of conditioning a processing chamber for a production process includes performing a conditioning step at a conditioning process recipe substantially different than a process recipe of the production process, and performing a warm-up process at a warm-up pro...	03/15/2011
7892445	Wafer electrical discharge control using argon free dechucking gas A method of dechucking a wafer, with a low-k dielectric layer, held onto an electrostatic chuck by an electrostatic charge in a plasma chamber is provided. The electrostatic clamping voltage is removed. An essentially argon free dechucking gas is provided into the p...	02/22/2011
7883631	Plasma etching method, plasma etching apparatus, control program and computer-readable storage medium A plasma etching method includes the step of performing a plasma etching on a silicon-containing dielectric layer formed on a substrate to be processed by using a plasma, while using an organic layer as a mask. In addition, the plasma is generated from a processing ...	02/08/2011
7883632	Plasma processing method A plasma processing apparatus that enables polymer to be removed from an electrically insulated electrode. A susceptor of the plasma processing apparatus is disposed in a substrate processing chamber having a processing space therein. A radio frequency power source ...	02/08/2011
7879250	Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection The disclosure concerns a method of processing a workpiece or in a plasma reactor chamber, using independent gas injection at the wafer edge. ...	02/01/2011
7871532	Plasma processing method and post-processing method A plasma processing method for performing a plasma process on a target object placed in a chamber includes a first plasma process of turning a gas containing at least a halogen element into plasma to generate first plasma, thereby processing the target object; a sec...	01/18/2011
7857984	Plasma surface treatment method, quartz member, plasma processing apparatus and plasma processing method A plasma surface treatment method for performing a surface treatment on a quartz member used under a plasma-exposed environment by using a plasma having an ion energy greater than about 5.3 eV. The plasma has, near a surface of the quartz member, an electron tempera...	12/28/2010
7846348	Manufacturing method of semiconductor device A manufacturing method of a semiconductor device using a semiconductor manufacturing unit comprising a reaction chamber, a substrate mounting stage, and a high frequency power supply coupled to the substrate mounting stage, a blocking capacitor interposed between th...	12/07/2010
7846347	Method for removing a halogen-containing residue The invention provides for a method and integrated system for removing a halogen-containing residue from a substrate comprising etching the substrate, heating the substrate and exposing the heated substrate to a plasma that removes the halogen-containing residue.	12/07/2010
7842190	Plasma etching method A plasma etching method includes the step of etching a lower organic material film by using an upper organic material film and an intermediate layer as a mask in a processing chamber of a plasma etching apparatus, while using an etching gas made up of a gaseous mixt...	11/30/2010
7828987	Organic BARC etch process capable of use in the formation of low K dual damascene integrated circuits In some implementations, a method is provided in a plasma reactor for etching a trench in an organic planarization layer of a resist structure comprising a photoresist mask structure over a hardmask masking the organic planarization layer. This may include introduci...	11/09/2010
7799237	Method and apparatus for etching a structure in a plasma chamber A plasma processing apparatus includes a plasma reaction chamber in which a plasma is generated for processing. First and second electrodes are located in the chamber for generating the plasma. First and second RF power sources provide RF power to the first and seco...	09/21/2010
7799238	Plasma processing method and plasma processing apparatus A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage...	09/21/2010
7794617	Plasma etching method, plasma processing apparatus, control program and computer readable storage medium A plasma etching method includes the step of: etching a silicon layer of a target object by using a plasma generated from a processing gas containing a fluorocarbon gas, a hydrofluorocarbon gas, a rare gas and an O2 gas and by employing a patterned resist...	09/14/2010
7794616	Etching gas, etching method and etching gas evaluation method An etching gas for etching an oxide film formed on a substrate, includes a main gas composed of an unsaturated fluorocarbon-based gas; and an additive gas composed of a straight-chain saturated fluorocarbon-based gas expressed by CXF(2X+2) (x r...	09/14/2010

«First «Previous1 2 3 4 5 6 7 8 9 10 11 Next»Last»

PatentStorm

Quotables

PatentStorm News

Class 216/67 - Using plasma