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Class 205/189 - Predominantly titanium, vanadium, zirconium, niobium, hafnium, or tantalum nonelectrolytic coating


Subclass of Class 205 - Electrolysis: processes, compositions used therein, and methods of preparing the compositions
Definition: Subject matter wherein the major or predominant constituent
No. of patents: 28
Last issue date: 01/29/2008


NumberTitleIssue Date
7323221Coating of objects
The present invention relates to a process for the coating of objects made of valve metals or their alloys with a thin barrier layer consisting of the metal and an oxide ceramic layer provided thereon whose surface has been coated with fluoropolymers, characterized ...
01/29/2008
7144658Ultrathin, conformal polymer coatings as separators at nanostructured metal oxides used for energy storage
An electrode for use in energy storage comprising a nanostructured mesoporous electrically conductive metal oxide and an ultrathin, conformal polymer coating on the metal oxide wherein said electrode has a mesoporous structure. Also disclosed is the related method f...
12/05/2006
7077943Barium titanate film synthesizing process
A new technique to synthesize barium titanate (BaTiO3) on homogeneous substrates (titanium) or heterogeneous substrates (silicon wafers, metal, glass, ceramics, polymers, other metals, etc.) is disclosed to include a first step to deposit a titanium film ...
07/18/2006
7011737Titania nanotube arrays for use as sensors and method of producing
An electrical resistive device, including: an array of titania nanotubes open at an outwardly-directed end formed by anodizing at least a portion of a titanium layer; a plurality of palladium (or other noble metal) clusters having been deposited atop the nanotube ar...
03/14/2006
6495021Method for forming capacitor anodes
A dendritic sponge which is directionally-grown on a substrate material has a high surface to volume ratio and is suitable for forming anodes for highly efficient capacitors. A dielectric film is formed on the sponge surface by oxidizing the surface. In a...
12/17/2002
6231993Anodized tantalum pellet for an electrolytic capacitor
An anodized pressed valve metal powder pellet is described. The anodized pellet is particularly useful as an anode in an electrolytic capacitor having an improved breakdown voltage. The anodized pellet is formed by periodically holding the pellet at a con...
05/15/2001
5867234Manufacturing method of mim nonlinear device, mim nonlinear device, and liquid crystal display device
In a manufacturing method of a MIM nonlinear device (50) having a Ta electrode layer (16), an anodic oxidation film (18) and a Cr electrode layer (20), tantalum oxidation film (14) is first formed on the transparent substrate (12). The Ta electrode layer ...
02/02/1999
5759376Method for the electrodeposition of hydroxyapatite layers
The invention concerns a method for the electrochemical deposition of hydroxyapatite layers onto metal and ceramic surfaces, the actual electrochemical coating being combined with a pre-coating of the substrates by sol-gel processes, using a calcium and (...
06/02/1998
5760981Aluminum reflector with a composite reflectivity-enhancing surface layer
Reflector having a composite reflectivity enhancing layer as reflecting surface layer on a reflector body where the said composite has a sandwich structure with an aluminum layer facing the reflector body, an outer layer, the HI-layer, with a refractive i...
06/02/1998
5679234Process of forming miniature pattern well controlled in thickness on semiconductor wafer through selective electroplating
A mask layer is formed on a conductive layer covering not only a central area assigned to integrated circuits but also a vacant peripheral area of a semiconductor wafer, and an electroplating system allows metallic miniature patterns to grow on the conduc...
10/21/1997
5236573MIM devices, their method of fabrication and display devices incorporating such devices
A MIM device is fabricated by depositing sequentially on a substrate (14) a first conductive layer (30), a thin layer of insulative material (32) of for example silicon oxynitride or silicon nitride. The first conductive layer is formed of anodisable mate...
08/17/1993
5178967Bilayer oxide film and process for producing same
A bilayer oxide film which comprises a preferably porous layer containing aluminum oxide and a non-porous layer comprising an oxide of a valve metal, e.g. tantalum. The layers are integral. The film is produced by forming a coating of aluminium or an anod...
01/12/1993
4994314Color change devices incorporating thin anodic films
A laminated color change device which exhibits an irreversible color change upon delamination. The device comprises two layers capable of generating a color by a light interference and absorption phenomenon that requires direct and intimate contact betwee...
02/19/1991
4904544Zn-based composite-plated metallic material and plating method
Disclosed is a Zn-based composite-plated metallic material, comprising a plating layer on a metal substrate. The plating layer consists essentially of (1) Zn or as Zn alloy electroplated onto a metallic substrate and (2) the cathodic precipitation reactio...
02/27/1990
4713150Process for preparing a part for color anodization
An article of manufacture having a metallic surface consisting of brass or stainless steel is overcoated with a first layer of nickel and a second layer of elemental niobium. The article may thereafter be color anodized in a solution of ammonium sulfate w...
12/15/1987
4589961Aluminum mask anodization with lift-off for patterning Josephson junction devices
In an improvement to the Selective Non-Anodizing Process (SNAP) an anodizable layer, nominally 100 nm of aluminum, is deposited on top of a 300 nm niobium--6 nm silicon--30 nm niobium tri-layer upon a substrate of oxidized silicon. The structure is then m...
05/20/1986
4541904Method of manufacturing a moisture sensor
A moisture sensor is manufactured by applying a thin layer of tantalum oxide to a moisture insensitive substrate and placing at least two electrodes on the tantalum oxide layer. The tantalum oxide layer comprises the oxide of a highly resistive low densit...
09/17/1985
4532016Capacitive hygrometer and its production process
The present invention relates to a capacitive hygrometer comprising a capacitor (1) having a dielectric material (3), whose dielectric constant varies as a function of the quantity of water absorbed. It has on one of its conductive faces numerous fissures...
07/30/1985
4514254Groundplane post-etch anodization
Pinholes opened though insulating layers in Josephson integrated circuits are sealed by this post-etch anodization process. Josephson junction integrated circuits, in part, contain patterned metal films on an insulated groundplane. The patterns of conduct...
04/30/1985
4502936Electrode and electrolytic cell
An electrode particularly useful in hypochlorite cells operating at low temperatures or in metal winning cells in which the electrode comprises a titanium substrate with a platinum metal coating and an intermediate coating of substoichiometric tantalum ox...
03/05/1985
4469568Method for making thin-film transistors
A method for making a thin-film transistor wherein a gate insulating layer is formed by anodizing two oxide layers on the substrate and then etching the assembly to completely remove the uppermost one of these layers to leave the lowermost layer so as to ...
09/04/1984
4415411Anode coated with ଲ-lead dioxide and method of producing same
An anode coated with ଲ-lead dioxide which comprises a titanium substrate, titanium expanded metal welded on at least one side of the titanium substrate, titanium reinforcing bars welded on the peripheries of said expanded metal to both said expanded...
11/15/1983
4400244Photo-voltaic power generating means and methods
A photo-voltaic power cell based on a photoelectric semiconductor compound and the method of using and making the same. The semiconductor compound in the photo-voltaic power cell of the present invention can be electrolytically formed at a cathode in an e...
08/23/1983
4133724Anodizing a compound semiconductor
A method of anodizing a compound semiconductor comprises (1) plating a metal on the compound semiconductor, (2) contacting the exposed surface of the metal with an electrolyte which permits anodic oxidation of the metal, and (3) passing an electric current through ...
01/09/1979
4108736Method of producing protective coatings
The invention relates to a method for forming surface coatings on a substrate by anodic oxidation, wherein the substrate contains, at least in those of its parts which are immediately sub-adjacent to its surface, at least one element selected from niobium...
08/22/1978
4058445Method of producing a tantalum thin film capacitor
A method of producing thin film tantalum capacitors having a tantalum thin film electrode mounted on a nonconducting support member is described. The tantalum electrode is doped with nitrogen to produce a nitrogen content in a range from the nitrogen cont...
11/15/1977
4036708Technique for nucleating b.c.c. tantalum films on insulating substrates
A technique is described for depositing organic layers down to a fraction of a monolayer thickness upon insulating substrates by non-vacuum deposition techniques which permit the subsequent deposition of mechanically stable adherent films of b.c.c. tantal...
07/19/1977
4019970Process for making titanium-supported lead electrode
In making a lead electrode for a lead-acid accumulator or the like, a supporting body of titanium is pickled in a boiling solution of oxalic acid and then adsorptively coated with a titanium (IV) layer in a treatment bath. This treatment is followed by th...
04/26/1977
 
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