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| Number | Title | Issue Date |
| 8172993 | Magnetron sputtering electrode, and sputtering apparatus provided with magnetron sputtering electrode In a magnetron sputtering apparatus an arrangement is made such that the peripheral portion of a target is uniformly eroded to attain a high efficiency in target utilization and, in addition, that an abnormal discharging hardly occurs to thereby enable satisfactory ... | 05/08/2012 |
| 8048277 | Magnet unit and magnetron sputtering apparatus A magnet unit, which can realize uniform film thickness distribution of a thin film formed on a substrate without increasing the length and width of a target. The magnet unit includes a peripheral magnet, which is disposed on the yoke on the back side of a cathode e... | 11/01/2011 |
| 7531071 | Magnet arrangement for a planar magnetron A magnetic arrangement for a planar magnetron, in which an initial magnetic pole encompasses a second magnetic pole. This magnetic arrangement is moved linear in longitudinal direction to a target by a specific value and then moved back in opposite direction by the ... | 05/12/2009 |
| 7411352 | Dual plasma beam sources and method A pair of plasma beam sources are connected across an AC power supply to alternatively produce an ion beam for depositing material on a substrate transported past the ion beams. Each plasma beam source includes a discharge cavity having a first width and a nozzle ex... | 08/12/2008 |
| 7378001 | Magnetron sputtering A magnetron sputtering apparatus has a controller for selectively releasing the spread of plasma on a substrate on a support. The controller can also contain the plasma when the substrate is to be coated with the target material. This enables cleaning of the target ... | 05/27/2008 |
| 7371285 | Motorized chamber lid A semiconductor processing chamber having a motorized lid is provided. In one embodiment, the semiconductor processing chamber generally includes a chamber body having sidewalls and a bottom defining an interior volume. A lid assembly is coupled to the chamber body ... | 05/13/2008 |
| 7368041 | Method for controlling plasma density or the distribution thereof Method for manufacturing magnetron sputter-coated workpieces includes placing a substrate adjacent a magnetron source having a target cathode, generating above the target cathode, at least one plasma loop by an electron trap established by generating a magnetic fiel... | 05/06/2008 |
| 7335282 | Sputtering using an unbalanced magnetron A sputtering process and magnetron especially advantageous for low-pressure plasma sputtering or sustained self-sputtering, in which the magnetron has a reduced area but full target coverage. The magnetron includes an outer pole face surrounding an inner pole face w... | 02/26/2008 |
| 7327089 | Beam plasma source A plasma source which includes a discharge cavity having a first width, where that discharge cavity includes a top portion, a wall portion, and a nozzle disposed on the top portion and extending outwardly therefrom, where the nozzle is formed to include an aperture ... | 02/05/2008 |
| 7316763 | Multiple target tiles with complementary beveled edges forming a slanted gap therebetween A target assembly composed of multiple target tiles bonded in an array to a backing plate of another material. The edges of the tile within the interior of the array are formed with complementary beveled edges to form slanted gaps between the tiles. The gaps may sla... | 01/08/2008 |
| 7294242 | Collimated and long throw magnetron sputtering of nickel/iron films for magnetic recording head applications An apparatus and method for sputter depositing a magnetic film on a substrate to produce a magnetic device such as magnetic recording heads for reading digital information from a storage medium. The apparatus of the invention includes a sputtering chamber containing... | 11/13/2007 |
| 7282445 | Multiple seed layers for interconnects One embodiment of the present invention is a method for depositing two or more seed layers over a substrate, the substrate includes a patterned insulating layer which comprises at least one opening surrounded by a field, the at least one opening and the field being ... | 10/16/2007 |
| 7268076 | Apparatus and method for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece Physical vapor deposition and re-sputtering of a barrier layer in an integrated circuit is performed by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced int... | 09/11/2007 |
| 7259378 | Closed drift ion source A closed drift ion source which includes a channel having an open end, a closed end, and an input port for an ionizable gas. A first magnetic pole is disposed on the open end of the channel and extends therefrom in a first direction. A second magnetic pole disposed ... | 08/21/2007 |
| 7244344 | Physical vapor deposition plasma reactor with VHF source power applied through the workpiece A physical vapor deposition plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, a process gas inlet coupled to the chamber and a process gas sour... | 07/17/2007 |
| 7223322 | Moving magnetic/cathode arrangement and method A magnetron sputtering electrode for use with a magnetron sputtering device, wherein the magnetron sputtering electrode comprises a cathode body, a drive unit coupled to the cathode body, a target received by the cathode body, and a closed loop magnet arrangement re... | 05/29/2007 |
| 7214619 | Method for forming a barrier layer in an integrated circuit in a plasma with source and bias power frequencies applied through the workpiece A barrier layer is formed in an integrated circuit by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced into the vacuum chamber. A target-sputtering plasma i... | 05/08/2007 |
| 7198699 | Sputter coating apparatus including ion beam source(s), and corresponding method A coating apparatus deposits a first coating (single or multi-layered) onto a first side of a substrate (e.g., glass substrate) passing through the apparatus, and a second coating (single or multi-layered) onto the other or second side of the substrate. In certain e... | 04/03/2007 |
| 7199052 | Seed layers for metallic interconnects One embodiment of the present invention is a method for making copper or a copper alloy interconnects, which method includes: (a) forming a patterned insulating layer over a substrate, the patterned insulating layer including at least one opening and a field surroun... | 04/03/2007 |
| 7186319 | Multi-track magnetron exhibiting more uniform deposition and reduced rotational asymmetry A multi-track magnetron having a convolute shape and asymmetric about the target center about which it rotates. A plasma track is formed as a closed loop between opposed inner and outer magnetic poles, preferably as two or three radially arranged and spirally shaped... | 03/06/2007 |
| 7182843 | Rotating sputtering magnetron The magnet arrangement and resulting rotating sputtering magnetron design of an embodiment provides magnetic flux density and distribution to penetrate thick production ferrous targets. Further, the magnetic field shape improves target life by more uniformly removin... | 02/27/2007 |
| 7183559 | Ion source with substantially planar design In certain example embodiments of this invention, there is provide an ion source including an anode and a cathode. In certain example embodiments, the cathode does not overhang over the anode, or vice versa. Since no, or fewer, areas of overhang are provided between... | 02/27/2007 |
| 7179351 | Methods and apparatus for magnetron sputtering In one embodiment, a magnetron sputtering apparatus forms a closed plasma loop and an open plasma loop within the closed plasma loop. The open plasma loop allows for relatively uniform erosion on the face of a target by broadening the sputtered area of the target. T... | 02/20/2007 |
| 7179350 | Reactive sputtering of silicon nitride films by RF supported DC magnetron An asymmetric alternating voltage (preferably 40 KHz) is provided between a pair of targets having a coaxial (preferably frusto-conical) relationship to (1) deposit the material in a uniform thickness on the substrate surface (2) eliminate dielectric material from t... | 02/20/2007 |
| 7166199 | Magnetron sputtering systems including anodic gas distribution systems The present invention provides a magnetron sputtering system using a gas distribution system which also serves as a source of anodic charge to generate plasma field. The sputtering system is comprised of a vacuum chamber, a cathode target of sputterable material, a ... | 01/23/2007 |
| 7156960 | Method and device for continuous cold plasma deposition of metal coatings A method for the deposition of a metal layer on a substrate (1) uses a cold plasma inside an enclosure (7) heated to avoid the formation of a metal deposit at its surface. The enclosure has an inlet (21) and an outlet (22) for the substra... | 01/02/2007 |
| 7150810 | Sputtering target and method for fabricating the same A sputtering target includes a backing plate, a copper target provided on the backing plate, and a protection layer formed of a corrosion-resistant metal on the surface of the copper target The protection layer depresses oxidation of the copper target and the adhesi... | 12/19/2006 |
| 7147759 | High-power pulsed magnetron sputtering Magnetically enhanced sputtering methods and apparatus are described. A magnetically enhanced sputtering source according to the present invention includes an anode and a cathode assembly having a target that is positioned adjacent to the anode. An ionization source... | 12/12/2006 |
| 7134941 | Methods for residue removal and corrosion prevention in a post-metal etch process A method of plasma assisted CO2 cleaning for dry removal of residual photoresist and sidewall polymer with an etch gas mixture comprising fluorine containing gas, oxygen and hydrogen in N2 or H2O. The process removes polymer residues... | 11/14/2006 |
| 7135820 | Vane structure of magnetron A magnetron includes semi-circularly shaped electric field adjusting grooves provided on surfaces of outer ends of vanes brought into contact with an inner surface of a positive polar body to make distribution of an electric field uniform on the surfaces of the oute... | 11/14/2006 |
| 7135097 | Box-shaped facing-targets sputtering apparatus and method for producing compound thin film Disclosed is a box-shaped facing-targets sputtering apparatus capable of forming, at low temperature, a compound thin film of high quality while causing minimal damage to an underlying layer. The box-shaped facing-targets sputtering apparatus includes a box-shaped f... | 11/14/2006 |
| 7119489 | Rotation-magnetron-in-magnetron (RMIM) electrode, method of manufacturing the RMIM electrode, and sputtering apparatus including the RMIM electrode An RMIM electrode, a method for manufacturing the RMIM electrode, and a sputtering apparatus using the RMIM electrode, wherein the RMIM electrode includes a magnet unit including a cylinder-shaped magnet located at a center of the magnet unit and a plurality of ring... | 10/10/2006 |
| 7115194 | Magnetron sputtering apparatus A magnetron sputtering apparatus 1 is composed of a vacuum chamber 2, a target 3, a cathode 4 that holds the target 3 in the vacuum chamber 2, a substrate 5, an anode 6 that holds the substrate 5 and is ... | 10/03/2006 |
| 7105434 | Advanced seed layery for metallic interconnects One embodiment of the present invention is a method for making metallic interconnects, which method is utilized at a stage of processing a substrate having a patterned insulating layer which includes at least one opening and a field surrounding the at least one open... | 09/12/2006 |
| 7101260 | Methods for resist stripping and other processes for cleaning surfaces substantially free of contaminants A method for manufacturing an article where the article has polymeric residue that is to be removed during the manufacture of the article. The article is introduced into a controlled environment of a processing tool that has at least first and second processing cham... | 09/05/2006 |
| 7101466 | Linear sweeping magnetron sputtering cathode and scanning in-line system for arc-free reactive deposition and high target utilization A sweeping linear magnetron is described. The magnetron has a cathode backing plate, a drive housing attached to the cathode backing plate and a motor held in the drive housing. The motor drives a yoke positioned within a cut-out in the backing plate. The yoke has a... | 09/05/2006 |
| 7097410 | Methods and apparatus for controlled-angle wafer positioning The orientation of a wafer with respect to the surface of an electrolyte is controlled during an electroplating process. The wafer is delivered to an electrolyte bath along a trajectory normal to the surface of the electrolyte. Along this trajectory, the wafer is an... | 08/29/2006 |
| 7087145 | Sputtering cathode assembly A sputtering cathode assembly attachable to a cathode mounting plate for a thin-film vapor deposition chamber. The cathode assembly includes a magnet module and a cathode body generally coextensive with and sealingly housing the magnet module and defining a water ch... | 08/08/2006 |
| 7052583 | Magnetron cathode and magnetron sputtering apparatus comprising the same A magnetron cathode and a sputtering apparatus including the same are provided. The magnetron cathode includes three or more magnet units, each of which comprises a single magnet or a plurality of magnets having the same poles facing toward the same direction, where... | 05/30/2006 |
| 7041201 | Sidewall magnet improving uniformity of inductively coupled plasma and shields used therewith One aspect of the invention includes an auxiliary magnet ring positioned outside of the chamber wall of a plasma sputter reactor and being disposed at least partially radially outwardly of an RF coil used to inductively generate a plasma, particularly for sputter et... | 05/09/2006 |
