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| Number | Title | Issue Date |
| 8152975 | Deposition system with improved material utilization A target assembly for material deposition includes a first target piece having a first sputtering surface and comprising a first target material that is to be sputtered off the first sputtering surface and to deposit on a substrate. The target assembly also includes... | 04/10/2012 |
| 8137517 | Dual position DC magnetron assembly A sputtering system includes a first sputtering assembly configured to sputter material onto a first disk and a second sputtering assembly configured to sputter material onto a second disk, the second sputtering assembly positioned proximate the first sputtering ass... | 03/20/2012 |
| 8123919 | Sputtering target with bonding layer of varying thickness under target material Certain example embodiments of this invention relate to a rotatable magnetron sputtering target(s) for use in sputtering material(s) onto a substrate. In certain example embodiments, the target includes a cathode tube with a target material applied thereto via plasm... | 02/28/2012 |
| 8118984 | Sintered sputtering target made of refractory metals Proposed is a sintered sputtering target containing two or more types of refractory metals. In particular, proposed is a sintered sputtering target of refractory metals that is able to improve the target structure to prevent the dropout of metal particles other than... | 02/21/2012 |
| 8052852 | Magnetron sputtering cathode mechanism A magnetron sputtering cathode mechanism includes a backing plate, a target, at least one magnetic component and at least one magnet. The backing plate has a first surface and a second surface opposite to the first surface. The first surface has at least one positio... | 11/08/2011 |
| 7993503 | Method for preparing by thermal spraying a silicon-and zirconium-based target Method of producing a target by thermal spraying, especially by plasma spraying, said target comprising at least one compound based on atoms of different types chosen especially from the constituents M belonging to the (Zr, Mo, Ti, Nb, Ta, Hf, Cr) family and silicon... | 08/09/2011 |
| 7972486 | Machine for coating a substrate, and module A machine for coating a transparent substrate for the production of display screens comprises a coating chamber that has a modular design. Each of the modules 1 features a chamber section 2, a first support 3 that is arranged removably in or at ... | 07/05/2011 |
| 7951275 | Sputtering target and method for finishing surface of such target Provided is a hollow cathode sputtering target comprising an inner bottom face having a surface roughness of Ra≦1.0 μm, and preferably Ra≦0.5 μm. This hollow cathode sputtering target has superior sputter film evenness (uniformity), generates few arcing and pa... | 05/31/2011 |
| 7951276 | Cluster generator Described herein is an apparatus and a method for producing atom clusters based on a gas discharge within a hollow cathode. The hollow cathode includes one or more walls. The one or more walls define a sputtering chamber within the hollow cathode and include a mater... | 05/31/2011 |
| 7922881 | Sputtering target with an insulating ring and a gap between the ring and the target A sputtering plasma reactors for plasma vapor deposition (PVD) having an improved interface between a PVD target, a ceramic ring and a PVD chamber wall. The reactor includes a PVD chamber wall and a PVD target, wherein the target in conjunction with the PVD chamber ... | 04/12/2011 |
| 7871505 | Sputtering target transport box The present invention pertains to a sputtering target transport box having a void the size of a sputtering target, wherein supports for mechanical transport are provided to the bottom plate of the transport box, and a wheel for man-powered transport is provided to t... | 01/18/2011 |
| 7811429 | Target support assembly The invention relates to a target support assembly (1) comprising a support (2), on which a target lining is arranged. In order to simplify the production of the target lining or of the target support assembly and/or the placement of the target lining ... | 10/12/2010 |
| 7708868 | Variable thickness plate for forming variable wall thickness physical vapor deposition target A variable thickness sputtering target which increases the target material thickness at strategic locations to greatly improve the yield of usable wafers per target, and a method of manufacturing such target comprising forming a generally flat and circularly shaped ... | 05/04/2010 |
| 7618520 | Physical vapor deposition target constructions The invention includes a target construction having a sputtering region and a flange region laterally outward relative to the sputtering region. The flange region has a front surface disposed on a front face of the construction and a back surface opposing the front ... | 11/17/2009 |
| 7588668 | Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers A sputtering target assembly and method for bonding a sputtering target to a backing plate is disclosed. When insulatively bonding a sputtering target to a backing plate, it is necessary to ensure that the bonding material has good thermal conductivity so that the t... | 09/15/2009 |
| 7431808 | Sputter target based on titanium dioxide An electrically conductive titanium dioxide sputter target with an electrical resistivity of less than 5 Ω-cm, which contains as an additive at least one doping agent or a mixture of doping agents in an amount of less than 5 mole %. The doping agent or agents are s... | 10/07/2008 |
| 7399387 | Target for sputtering and a method for manufacturing a magnetic recording medium using the target A target for sputtering includes a sputtering material layer having tilt surfaces. Sputtering material particles are emitted from the tilt surfaces in directions of their normals. Consequently, even though the target and a substrate are arranged approximately parall... | 07/15/2008 |
| 7381282 | Co alloy target and its production method, soft magnetic film for perpendicular magnetic recording and perpendicular magnetic recording medium A Co alloy target comprising 1 to 10 atomic % of Zr and 1 to 10 atomic % of Nb and/or Ta, the balance being unavoidable impurities and Co, is produced by rapidly solidifying a melt of the Co alloy to produce an alloy powder, classifying the alloy powder to maximum p... | 06/03/2008 |
| 7371285 | Motorized chamber lid A semiconductor processing chamber having a motorized lid is provided. In one embodiment, the semiconductor processing chamber generally includes a chamber body having sidewalls and a bottom defining an interior volume. A lid assembly is coupled to the chamber body ... | 05/13/2008 |
| 7347353 | Method for connecting magnetic substance target to backing plate, and magnetic substance target A method for connecting a magnetic substance target to a backing plate with less variation in plate thickness, characterized in having the steps of connecting the magnetic substance target to an aluminum plate beforehand while maintaining the flatness, connecting th... | 03/25/2008 |
| 7338582 | Method for manufacturing manganese oxide nanostructure and oxygen reduction electrode using said manganese oxide nanostructure It is an object of the present invention to provide an oxygen reduction electrode having excellent oxygen reduction catalysis ability. In a method of manufacturing a manganese oxide nanostructure having excellent oxygen reduction catalysis ability and composed of se... | 03/04/2008 |
| 7335282 | Sputtering using an unbalanced magnetron A sputtering process and magnetron especially advantageous for low-pressure plasma sputtering or sustained self-sputtering, in which the magnetron has a reduced area but full target coverage. The magnetron includes an outer pole face surrounding an inner pole face w... | 02/26/2008 |
| 7316763 | Multiple target tiles with complementary beveled edges forming a slanted gap therebetween A target assembly composed of multiple target tiles bonded in an array to a backing plate of another material. The edges of the tile within the interior of the array are formed with complementary beveled edges to form slanted gaps between the tiles. The gaps may sla... | 01/08/2008 |
| 7315129 | Plasma producing apparatus and doping apparatus An object of the present invention is to provide an apparatus for producing stable plasma. Another object of the present invention is to provide an apparatus having a long-lasting cathode electrode which is superior in field emission characteristic since the plasma ... | 01/01/2008 |
| 7314519 | Vapor-phase epitaxial apparatus and vapor phase epitaxial method A vapor-phase growth apparatus including a reaction furnace, a wafer container disposed in said furnace, a gas supply member, and a heating member, wherein the apparatus is designed to form a grown film on a front surface of the wafer by supplying a source gas in a ... | 01/01/2008 |
| 7303996 | High-K gate dielectric stack plasma treatment to adjust threshold voltage characteristics A method for treating a gate structure comprising a high-K gate dielectric stack to improve electric performance characteristics including providing a gate dielectric layer stack including a binary oxide over a silicon substrate; forming a polysilicon layer over the... | 12/04/2007 |
| 7282122 | Method and system for target lifetime A method and system for determining a lifetime of a target for a physical vapor deposition tool (302), has, a mapping table (304a) of criteria for a minimum accumulating rate of Δ wafers fabricated by Δ target life for a target in the tool; an... | 10/16/2007 |
| 7282123 | Composite sputter target and phosphor deposition method The invention is a novel sputter target and deposition method for multi-element thin film phosphors for thick film dielectric electroluminescent displays in which the deposited phosphors provide a high luminance and colors required for TV applications. The method co... | 10/16/2007 |
| 7268076 | Apparatus and method for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece Physical vapor deposition and re-sputtering of a barrier layer in an integrated circuit is performed by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced int... | 09/11/2007 |
| 7261796 | Method and apparatus for aligning a machine tool A machine tool is provided comprising a base, a slide assembly attached to the base for supporting a tool and translating the tool along an axis, and a workpiece holder attached to the base. At least one of the slide assembly and the workpiece holder are movable lat... | 08/28/2007 |
| 7244344 | Physical vapor deposition plasma reactor with VHF source power applied through the workpiece A physical vapor deposition plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, a process gas inlet coupled to the chamber and a process gas sour... | 07/17/2007 |
| 7241368 | Hafnium silicide target for gate oxide film formation and its production method The present invention relates to a hafnium silicide target for forming a gate oxide film composed of HfSi0.05-0.37. Obtained is a hafnium silicide target superior in workability and embrittlement resistance, and suitable for forming a HfSiO film and HfSiO... | 07/10/2007 |
| 7235160 | Hollow cathode sputtering apparatus and related method The present invention provides an improved hollow cathode method for sputter coating a substrate. The method of the invention comprises providing a channel for gas to flow through, the channel defined by a channel defining surface wherein one or more portions of the... | 06/26/2007 |
| 7235143 | Controlled-grain-precious metal sputter targets A precious metal sputter target has a composition selected from the group consisting of platinum, palladium, rhodium, iridium, ruthenium, osmium and single-phase alloys thereof. The sputter target's grain structure is at least about 99 percent recrystallized and has... | 06/26/2007 |
| 7235162 | Cathode for vacuum sputtering treatment machine A cathode for a vacuum sputtering processing machine includes a target plate mounted on a support having a cooler. The support is secured to a frame delimiting a closed space for positioning and centering the target. The frame peripherally has a profiled catching ri... | 06/26/2007 |
| 7229588 | Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidified alloy powders and elemental Pt metal A cobalt-chromium-boron-platinum sputtering target alloy having multiple phases. The alloy can include Cr, B, Ta, Nb, C, Mo, Ti, V, W, Zr, Zn, Cu, Hf, O, Si or N. The alloy is prepared by mixing Pt powder with a cobalt-chromium-boron master alloy, ball milling the p... | 06/12/2007 |
| 7214619 | Method for forming a barrier layer in an integrated circuit in a plasma with source and bias power frequencies applied through the workpiece A barrier layer is formed in an integrated circuit by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced into the vacuum chamber. A target-sputtering plasma i... | 05/08/2007 |
| 7186324 | Hard film cutting tools, cutting tool coated with hard film, process for forming hard film and target used to form hard film A hard film for cutting tools which is composed of (Ti1−a−b−c−d, Ala, Crb, Sic, Bd)(C1−eNe) 0.5≦a≦0.8, 0.06≦b, 0≦c≦0.1, 0≦... | 03/06/2007 |
| 7175802 | Refurbishing spent sputtering targets Spent sputtering targets are refurbished by filling the depleted region of the target with new sputter material using a hot isostatic pressing or HIP'ing technique. ... | 02/13/2007 |
| 7166199 | Magnetron sputtering systems including anodic gas distribution systems The present invention provides a magnetron sputtering system using a gas distribution system which also serves as a source of anodic charge to generate plasma field. The sputtering system is comprised of a vacuum chamber, a cathode target of sputterable material, a ... | 01/23/2007 |
