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Class 204/298.11 - Specified mask, shield or shutter


Subclass of Class 204 - Chemistry: electrical and wave energy
Definition: Apparatus including significant specified means for masking,
No. of patents: 614
Last issue date: 11/13/2012


1                      
NumberTitleIssue Date
8308921Mask for increased uniformity in ion beam deposition
A shaper mask for particle flux includes a central portion extending from a body of the shaper mask along a first axis to block at least a first portion of a particle flux through the shaper mask from a first direction. The mask also includes at least one off-axis p...
11/13/2012
8303785Plasma processing apparatus and electronic device manufacturing method
A plasma processing apparatus includes a chamber, substrate stage, electrode, conductive members, and deposition shield. The chamber is maintained at a predetermined potential. The substrate stage serves to hold a substrate within the chamber. The electrode serves t...
11/06/2012
8221602Non-contact process kit
A process kit for use in a physical vapor deposition (PVD) chamber, along with a PVD chamber having a non-contact process kit are provided. In one embodiment, a process kit includes a generally cylindrical shield that has a substantially flat cylindrical body, at le...
07/17/2012
8192597Coating apparatus
A coating apparatus (100) for batch coating of substrates is presented. In the batch coater layers of a stack can be deposited by means of physical vapor deposition, by means of chemical vapor deposition or by a mixture of both processes. When compared to pre...
06/05/2012
8168049Sputtering apparatus and method of manufacturing solar battery and image display device by using the same
A sputtering apparatus of a continuous system that a first target 17a and a second target 17b are arranged to obliquely face a substrate 6 and other targets to form a film while conveying the substrate 6 along a conveying pa...
05/01/2012
8147664Sputtering apparatus
A sputtering apparatus includes a target holder which is placed in a vacuum vessel and can hold a target configured to deposit a film on a substrate, a substrate holder which can mount the substrate, a first shield member which is disposed in a vicinity of the subst...
04/03/2012
8066857Shaped anode and anode-shield connection for vacuum physical vapor deposition
A physical vapor deposition apparatus includes a vacuum chamber with side walls, a cathode, a radio frequency power supply, a substrate support, a shield, and an anode. The cathode is inside the vacuum chamber, and the cathode includes a sputtering target. The radio...
11/29/2011
8043487Chamber shield for vacuum physical vapor deposition
A physical vapor deposition apparatus includes a vacuum chamber with side walls, a cathode, a radio frequency power supply, a substrate support, and anode, and a shield. The cathode is inside the vacuum chamber and includes a sputtering target. The radio frequency p...
10/25/2011
7981262Process kit for substrate processing chamber
A process kit comprises a shield and ring assembly positioned about a substrate support in a processing chamber to reduce deposition of process deposits on internal chamber components and an overhang edge of the substrate. The shield comprises a cylindrical band hav...
07/19/2011
7811428Method and apparatus for an improved optical window deposition shield in a plasma processing system
The present invention presents an improved optical window deposition shield for optical access to a process space in a plasma processing system through a deposition shield, wherein the design and fabrication of the optical window deposition shield advantageously pro...
10/12/2010
7794574Top shield for sputtering system
A multi-chamber processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. The system includes a sputtering chamber and a separate pre-clean chamber, where wafers ca...
09/14/2010
7785455Cross-contaminant shield in sputtering system
A multi-chamber processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. The system includes a sputtering chamber and a separate pre-clean chamber, where wafers ca...
08/31/2010
7718045Ground shield with reentrant feature
The invention generally provides a ground shield for use in a physical vapor deposition (PVD) chamber. In one embodiment, a ground shield includes a generally cylindrical body comprising an outer wall, an inner upper wall, an inner lower wall having a diameter less ...
05/18/2010
7713390Ground shield for a PVD chamber
Apparatus for processing a substrate in a physical vapor deposition chamber is provided herein. In one embodiment, apparatus for processing a substrate in a physical vapor deposition chamber having a target disposed in a lid assembly and a grounded chamber wall incl...
05/11/2010
7591935Enhanced reliability deposition baffle for iPVD
Enhanced reliability and performance stability of a deposition baffle is provided in ionized physical vapor deposition (iPVD) processing tool in which a high density plasma is coupled into a chamber from an external antenna through a dielectric window. A deposition ...
09/22/2009
7569125Shields usable with an inductively coupled plasma reactor
A one-piece inner shield usable in a plasma sputter reactor and extending from the target to the pedestal with a smooth inner surface and supported by an annular flange in a middle portion of the shield. The shield may be used to support the RF coil used in exciting...
08/04/2009
7520969Notched deposition ring
A process kit for a semiconductor processing chamber is provided. In one embodiment, a process kit includes a notched deposition ring. In another embodiment, a process kit includes a cover ring configured to engage the notched deposition ring. In another embodiment,...
04/21/2009
7407565Method and apparatus for ionized plasma deposition
A system for performing PVD of metallic nitride(s) is disclosed. The improved performance is provided by a method of increasing the partial pressures of nitrogen or other active gases near the wafer surface through initial introduction of the argon or other neutral ...
08/05/2008
7404879Ionized physical vapor deposition apparatus using helical self-resonant coil
Provided is an ionized physical vapor deposition (IPVD) apparatus having a helical self-resonant coil. The IPVD apparatus comprises a process chamber having a substrate holder that supports a substrate to be processed, a deposition material source that supplies a ma...
07/29/2008
7374648Single piece coil support assemblies, coil constructions and methods of assembling coil constructions
The invention includes a coil support assembly having an insulator interfacing a surface of a shield disposed within a processing chamber. The insulator has an extension which extends through the shield. A second insulator is disposed between the shield and a coil a...
05/20/2008
7372689Guard wafer for semiconductor structure fabrication
An apparatus (and method for operating the same) which allows tightly coupling the device wafer to the electrostatic chuck of the process chamber after the process chamber is conditioned. The method comprises (a) providing (i) a process chamber and (ii) an electrost...
05/13/2008
7372941System and method for matching diffraction patterns
A method of analyzing patterns. The method comprises: receiving a first diffraction pattern; receiving a second diffraction pattern; receiving a third diffraction pattern; determining a similarity between the first and second diffraction patterns; determining a simi...
05/13/2008
7361257Electrochemical screening system
Devices and methods for evaluating an electrochemical reaction are disclosed. A device includes an electrochemical cell having a cavity for containing a liquidus electrolyte, a first working electrode having at least one electrolytic surface at least partially withi...
04/22/2008
7355192Adjustable suspension assembly for a collimating lattice
According to one aspect of the invention a plasma-based substrate processing apparatus comprises a collimator holding device, which efficiently and accurately positions a collimator over a substrate to enable the plasma-based substrate processing apparatus to select...
04/08/2008
7338581Sputtering apparatus
A sputtering apparatus includes paired targets 31 disposed in a vacuum chamber 30, substrate holder 33 disposed at a position nearly perpendicular to the paired target 31 and apart from a space formed by the paired targets 31, a pl...
03/04/2008
7335282Sputtering using an unbalanced magnetron
A sputtering process and magnetron especially advantageous for low-pressure plasma sputtering or sustained self-sputtering, in which the magnetron has a reduced area but full target coverage. The magnetron includes an outer pole face surrounding an inner pole face w...
02/26/2008
7318844Laser-irradiated metallized electroceramic
The manufacturing method for an electroceramic component (1), for example a varistor (1), comprises a laser irradiation of a part (5; 6) of the surface of an electroceramic body (2) before a metallization (3; 4) is applied to the p...
01/15/2008
7309842Shielded monolithic microplasma source for prevention of continuous thin film formation
A monolithic microplasma source includes a dielectric substrate having an outer surface that is exposed to a time varying electric field. A gap layer is positioned on an inner surface of the dielectric substrate. A shield including a slit is positioned on the gap la...
12/18/2007
7309961Driving frequency modulation system and method for plasma accelerator
A plasma accelerator (300) is disclosed that has three separate sections of coils (301-316) disposed outside the plasma chamber (321). The separate sections of coils include an initial discharge section (309-316), an acceler...
12/18/2007
7309617MRAM memory cell with a reference layer and method for fabricating
The invention relates to a method for fabricating a reference layer for MRAM memory cells and an MRAM memory cell equipped with a reference layer of this type. A reference layer of this type comprises two magnetically coupled layers having a different Curie temperat...
12/18/2007
7306707Adaptable processing element for a processing system and a method of making the same
The present invention presents an adaptable processing element for use in a processing system having multiple configurations. The processing element comprises a primary component and at least one detachable component, wherein the at least one detachable component ca...
12/11/2007
7300457Self-supporting metallic implantable grafts, compliant implantable medical devices and methods of making same
Implantable medical grafts fabricated of metallic or pseudometallic films of biocompatible materials having a plurality of microperforations passing through the film in a pattern that imparts fabric-like qualities to the graft or permits the geometric deformation of...
11/27/2007
7300557Device for targeted application of deposition material to a substrate
The invention relates to a device for the targeted application of deposition material onto a substrate, especially for focusing the sputter flux onto a narrow angular range in a PVD-system. The invention is characterized in that the deposition material is directed t...
11/27/2007
7294245Cover ring and shield supporting a wafer ring in a plasma reactor
A magnetic dipole ring assembly positioned inside a vacuum chamber and around a wafer being sputter deposited with a ferromagnetic material such as NiFe or other magnetic materials so that the material is deposited with a predetermined magnetization direction in the...
11/13/2007
7294242Collimated and long throw magnetron sputtering of nickel/iron films for magnetic recording head applications
An apparatus and method for sputter depositing a magnetic film on a substrate to produce a magnetic device such as magnetic recording heads for reading digital information from a storage medium. The apparatus of the invention includes a sputtering chamber containing...
11/13/2007
7291360Chemical vapor deposition plasma process using plural ion shower grids
A chemical vapor deposition process is carried out in a reactor chamber having a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower process region, each of the ion shower grids having plural orifices in mu...
11/06/2007
7288746Integrated thermal unit having laterally adjacent bake and chill plates on different planes
An integrated thermal unit comprising a bake plate having a substrate holding surface configured to hold and heat a substrate in a baking position and a chill plate having a substrate holding surface configured to hold and cool a substrate in a cooling position wher...
10/30/2007
7285196Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals
In recent years, copper wiring has emerged as a promising substitute for the aluminum wiring in integrated circuits, because copper offers lower electrical resistance and better reliability at smaller dimensions than aluminum. However, use of copper typically requir...
10/23/2007
7282445Multiple seed layers for interconnects
One embodiment of the present invention is a method for depositing two or more seed layers over a substrate, the substrate includes a patterned insulating layer which comprises at least one opening surrounded by a field, the at least one opening and the field being ...
10/16/2007
7279201Methods and apparatus for forming precursors
This invention relates to a method of forming a precursor for chemical vapour deposition including the steps of: (a) forming metal ions at a source, (b) introducing the ions into a reaction chamber; and (c) exposing the ions to a gas or gasses within the chamber to ...
10/09/2007
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