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| Number | Title | Issue Date |
| 8097133 | Evacuable magnetron chamber A vacuum pumping system and method in conjunction with a sputter reactor having a vacuum-pumped magnetron chamber sealed to the target backing plate. A main sputter chamber is vacuum sealed to the target front and cryo pumped. A bypass conduit and valve connect the ... | 01/17/2012 |
| 7776192 | Elongate vacuum system for coating one or both sides of a flat substrate An elongate vacuum system for coating one or both sides of a flat substrate which can be displaced by the system, comprises at least one magnetron provided with a magnetron surrounding area and is subdivided into successive compartments in the direction of transport... | 08/17/2010 |
| 7513981 | Manufacturing apparatus of semiconductor device A load lock chamber (12) is connected in a front stage of a film forming chamber (11) through a damper and the like. A pipe to which a N2 gas and aeriform or fog-like H2O are supplied is connected to the load lock chamber (12 | 04/07/2009 |
| 7413639 | Energy and media connection for a coating installation comprising several chambers The invention relates to an energy and media connection module for coating installations. Said module serves for supplying with cooling water, compressed air, process gases, signal, control and cathode power. It can be moved from one coating chamber to another coati... | 08/19/2008 |
| 7407565 | Method and apparatus for ionized plasma deposition A system for performing PVD of metallic nitride(s) is disclosed. The improved performance is provided by a method of increasing the partial pressures of nitrogen or other active gases near the wafer surface through initial introduction of the argon or other neutral ... | 08/05/2008 |
| 7355192 | Adjustable suspension assembly for a collimating lattice According to one aspect of the invention a plasma-based substrate processing apparatus comprises a collimator holding device, which efficiently and accurately positions a collimator over a substrate to enable the plasma-based substrate processing apparatus to select... | 04/08/2008 |
| 7338581 | Sputtering apparatus A sputtering apparatus includes paired targets 31 disposed in a vacuum chamber 30, substrate holder 33 disposed at a position nearly perpendicular to the paired target 31 and apart from a space formed by the paired targets 31, a pl... | 03/04/2008 |
| 7335282 | Sputtering using an unbalanced magnetron A sputtering process and magnetron especially advantageous for low-pressure plasma sputtering or sustained self-sputtering, in which the magnetron has a reduced area but full target coverage. The magnetron includes an outer pole face surrounding an inner pole face w... | 02/26/2008 |
| 7319295 | High-frequency power supply structure and plasma CVD device using the same A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency powe... | 01/15/2008 |
| 7318869 | Variable gas conductance control for a process chamber A deposition system in accordance with one embodiment of the present invention includes a process chamber, a stationary pedestal for supporting a substrate in the process chamber, and a moveable shield forming at least a portion of an enclosure defining the process ... | 01/15/2008 |
| 7314525 | Plasma CVD apparatus A plasma CVD apparatus comprises a reaction container for allowing a reaction for forming a thin film on a semiconductor wafer to be performed, a bias electrode which applies a high frequency bias for sputtering to the semiconductor wafer, a nozzle which supplies Si... | 01/01/2008 |
| 7309269 | Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device In this embodiment, an interval distance between a desposition source holder 17 and an object on which deposition is performed (substrate 13) is reduced to 30 cm or less, preferably 20 cm or less, more preferably 5 to 15 cm, and a deposition source hol... | 12/18/2007 |
| 7306707 | Adaptable processing element for a processing system and a method of making the same The present invention presents an adaptable processing element for use in a processing system having multiple configurations. The processing element comprises a primary component and at least one detachable component, wherein the at least one detachable component ca... | 12/11/2007 |
| 7300558 | Rapid cycle time gas burster An apparatus for rapidly establishing at least one preselected gas pressure in a process chamber comprising: (a) a chamber defining an interior space adapted to be maintained at a reduced pressure; and (b) a gas su... | 11/27/2007 |
| 7285196 | Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals In recent years, copper wiring has emerged as a promising substitute for the aluminum wiring in integrated circuits, because copper offers lower electrical resistance and better reliability at smaller dimensions than aluminum. However, use of copper typically requir... | 10/23/2007 |
| 7282112 | Method and apparatus for an improved baffle plate in a plasma processing system The present invention presents an improved baffle plate for a plasma processing system, wherein the design and fabrication of the baffle plate advantageously provides for a uniform processing plasma in the process space with substantially minimal erosion of the baff... | 10/16/2007 |
| 7282308 | Phase shifter film and process for the same In the formation of a halftone type phase shift mask, a reactive gas introduction inlet and an inert gas introduction inlet are provided so as to introduce the respective gases separately and by using a reactive low throw sputtering method a molybdenum silicide base... | 10/16/2007 |
| 7279201 | Methods and apparatus for forming precursors This invention relates to a method of forming a precursor for chemical vapour deposition including the steps of: (a) forming metal ions at a source, (b) introducing the ions into a reaction chamber; and (c) exposing the ions to a gas or gasses within the chamber to ... | 10/09/2007 |
| 7244334 | Apparatus used in reshaping a surface of a photoresist The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is fabricated using the patterned photoresist. In addition, the method may ... | 07/17/2007 |
| 7235160 | Hollow cathode sputtering apparatus and related method The present invention provides an improved hollow cathode method for sputter coating a substrate. The method of the invention comprises providing a channel for gas to flow through, the channel defined by a channel defining surface wherein one or more portions of the... | 06/26/2007 |
| 7232506 | System and method for feedforward control in thin film coating processes A system and method for feedforward control in thin film coating processes. A standard PID feedback control system that continuously monitors two or more process variables in a reactive sputtering process is combined with a feedforward control system to improve syst... | 06/19/2007 |
| 7166199 | Magnetron sputtering systems including anodic gas distribution systems The present invention provides a magnetron sputtering system using a gas distribution system which also serves as a source of anodic charge to generate plasma field. The sputtering system is comprised of a vacuum chamber, a cathode target of sputterable material, a ... | 01/23/2007 |
| 7166233 | Pulsed plasma processing method and apparatus In a method for performing a plasma-assisted treatment on a substrate in a reactor chamber by: introducing at least one process gas into the reactor chamber; and creating a plasma within the reactor chamber by establishing an RF electromagnetic field within the cham... | 01/23/2007 |
| 7147793 | Method of and apparatus for tailoring an etch profile An etch profile tailoring system (100), for use with an etching process carried out on a wafer (130), has a scavenging plate (170) with a baseline etch profile, and at least one etch profile tuning structure (such as a plug) (160) replace... | 12/12/2006 |
| 7141145 | Gas injection for uniform composition reactively sputter-deposited thin films A method of forming a thin film on a substrate/workpiece by sputtering, comprising steps of: (a) providing an apparatus comprising a vacuum chamber including at least one sputtering source and a gas supply means for injecting a gas... | 11/28/2006 |
| 7141512 | Method of cleaning semiconductor device fabrication apparatus A semiconductor device fabrication apparatus is cleaned after a conductive layer is formed on a metal oxide layer of a substrate. The substrate is disposed on a heater in a process chamber of the apparatus, and the conductive layer is formed by introducing source ga... | 11/28/2006 |
| 7104217 | Plasma processing apparatus The present invention provides a plasma processing apparatus having an electrode plate arranging therein, an upper electrode to which a dielectric member or a cavity portion is provided, a dimension or a dielectric constant of which is determined in such a manner th... | 09/12/2006 |
| 7098572 | Apparatus to control displacement of a body spaced-apart from a surface An apparatus to control displacement of a body spaced-apart from a surface includes a flexure system having a first flexure member defining a first axis of rotation and a second flexure member defining a second axis of rotation. A body is coupled to the flexure syst... | 08/29/2006 |
| 7095179 | Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities Methods and apparatus for generating strongly-ionized plasmas are disclosed. A strongly-ionized plasma generator according to one embodiment includes a chamber for confining a feed gas. An anode and a cathode assembly are positioned inside the chamber. A pulsed powe... | 08/22/2006 |
| 7094322 | Use of self-sustained atmospheric pressure plasma for the scattering and absorption of electromagnetic radiation A self-sustained atmospheric pressure system for absorbing or scattering electromagnetic waves using a capillary discharge electrode configuration plasma panel and a method for using the same. Of particular interest is the application of this system to vary the leve... | 08/22/2006 |
| 7094313 | Universal mid-frequency matching network A substrate processing system is provided with a processing chamber, an alternating voltage supply, and an impedance matching network. The processing chamber holds a substrate during processing and the alternating voltage supply is connected with the processing cham... | 08/22/2006 |
| 7090947 | Phase shifter film and process for the same In the formation of a halftone type phase shift mask, a reactive gas introduction inlet and an inert gas introduction inlet are provided so as to introduce the respective gases separately and by using a reactive low throw sputtering method a molybdenum silicide base... | 08/15/2006 |
| 7087145 | Sputtering cathode assembly A sputtering cathode assembly attachable to a cathode mounting plate for a thin-film vapor deposition chamber. The cathode assembly includes a magnet module and a cathode body generally coextensive with and sealingly housing the magnet module and defining a water ch... | 08/08/2006 |
| 7033471 | Sputter chamber as well as vacuum transport chamber and vacuum handling apparatus with such chambers A Vacuum transport chamber for disk-shaped substrates, has a base plate structure has an interior surface which borders an interior of the chamber on one side thereof. A covering structure is situated parallel and opposite an interior surface of the base plate struc... | 04/25/2006 |
| 7001491 | Vacuum-processing chamber-shield and multi-chamber pumping method One or more chambers of a multi-chamber vacuum processing apparatus are provided with a high gas flow conductance path to an exhaust volume of the apparatus that is maintained at high vacuum with a high vacuum pump. Separate pumps for the one or more chambers are ma... | 02/21/2006 |
| 6955741 | Semiconductor-processing reaction chamber The present application provides a PECVD reaction chamber for processing semiconductor wafers comprising a susceptor for supporting a semiconductor wafer inside the reaction chamber wherein the susceptor comprises a plurality vertical through-bores, a moving means f... | 10/18/2005 |
| 6955852 | Method of manufacturing sputter targets with internal cooling channels The present invention pertains to low temperature pressure consolidation methods which provide for bonding of target material (10) to the backing plate material (15) capable of withstanding the stresses imposed by high sputtering rates. The sputter tar... | 10/18/2005 |
| 6944006 | Guard for electrostatic chuck A guard for an electrostatic chuck includes a ceramic annulus that has an inner surface shaped to fit around a circumference of the electrostatic chuck, and an outer surface having (i) a top portion with a recessed trench and (ii) a side portion. A metal coating is ... | 09/13/2005 |
| 6936546 | Apparatus for shaping thin films in the near-edge regions of in-process semiconductor substrates An apparatus for shaping and encapsulating near edge regions of a semiconductor wafer is described. A housing of the apparatus has a slot for receiving an edge of a wafer affixed on a rotatable chuck. At least one plasma source connected to the housing generates a f... | 08/30/2005 |
| 6931619 | Apparatus for reshaping a patterned organic photoresist surface The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is fabricated using the patterned photoresist. In addition, the method may ... | 08/16/2005 |
