Bizarre Patents
A simulation environment for the sport of boxing utilizing a robotic machine interface system which carries a person
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8202407 | Apparatus and method for manufacturing polycarbonate solar cells An apparatus and method for manufacturing polycarbonate solar cells. The apparatus is designed to adapt many techniques used in the compact disc manufacturing industry to the manufacture of polycarbonate solar cells. The apparatus comprises: means for creating a pol... | 06/19/2012 |
| 8192596 | Ultrahigh-purity copper and process for producing the same Ultrahigh purity copper having a residual resistance ratio of 38,000 or greater and a purity of 8N or higher (excluding gas components), and in particular ultrahigh purity copper wherein the respective elements of O, C, N, H, S and P as gas components are 1 ppm or l... | 06/05/2012 |
| 7959775 | Thermal stress-failure-resistant dielectric windows in vacuum processing systems A ceramic window in an iPVD module is provided with features that reduce heating of the window as a result of metal film deposits on the window. Dielectric dissipation and resistive heating of the metal film are reduced by the features. Reducing of the window heatin... | 06/14/2011 |
| 7731825 | Manufacturing apparatus of magnetoresistance elements A manufacturing method of a magnetoresistance element having a pinned magnetic layer, a non-magnetic intermediate layer, and a free magnetic layer, the method includes forming at least one thin film of the non-magnetic intermediate layer and the free magnetic layer ... | 06/08/2010 |
| 7699965 | Zinc oxide-based transparent conductor and sputtering target for forming the transparent conductor Proposed is a zinc oxide-based transparent conductor characterized in having zinc oxide as its primary component, containing an element at 1 to 10 atomic % which has a smaller ion radius than zinc in the zinc oxide and serves as an n-type dopant for the zinc oxide, ... | 04/20/2010 |
| 7404879 | Ionized physical vapor deposition apparatus using helical self-resonant coil Provided is an ionized physical vapor deposition (IPVD) apparatus having a helical self-resonant coil. The IPVD apparatus comprises a process chamber having a substrate holder that supports a substrate to be processed, a deposition material source that supplies a ma... | 07/29/2008 |
| 7338581 | Sputtering apparatus A sputtering apparatus includes paired targets 31 disposed in a vacuum chamber 30, substrate holder 33 disposed at a position nearly perpendicular to the paired target 31 and apart from a space formed by the paired targets 31, a pl... | 03/04/2008 |
| 7314525 | Plasma CVD apparatus A plasma CVD apparatus comprises a reaction container for allowing a reaction for forming a thin film on a semiconductor wafer to be performed, a bias electrode which applies a high frequency bias for sputtering to the semiconductor wafer, a nozzle which supplies Si... | 01/01/2008 |
| 7285196 | Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals In recent years, copper wiring has emerged as a promising substitute for the aluminum wiring in integrated circuits, because copper offers lower electrical resistance and better reliability at smaller dimensions than aluminum. However, use of copper typically requir... | 10/23/2007 |
| 7279049 | Apparatus for reducing entrapment of foreign matter along a moveable shaft of a substrate support In one embodiment, the invention is a guard ring for reducing particle entrapment along a moveable shaft of a substrate support. In one embodiment, the guard ring comprises a substantially annular guard ring positioned within a step formed in a sleeve that circumscr... | 10/09/2007 |
| 7268076 | Apparatus and method for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece Physical vapor deposition and re-sputtering of a barrier layer in an integrated circuit is performed by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced int... | 09/11/2007 |
| 7244344 | Physical vapor deposition plasma reactor with VHF source power applied through the workpiece A physical vapor deposition plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, a process gas inlet coupled to the chamber and a process gas sour... | 07/17/2007 |
| 7241696 | Method for depositing a metal layer on a semiconductor interconnect structure having a capping layer Disclosed is a method for depositing a metal layer on an interconnect structure for a semiconductor wafer. In the method, a metal conductor is covered by a capping layer and a dielectric layer. The dielectric layer is patterned so as to expose the capping layer. The... | 07/10/2007 |
| 7223448 | Methods for providing uniformity in plasma-assisted material processes A method for providing uniformity in plasma-assisted material processes. A shielding plate is implemented within a plasma chamber above a substrate. The dimensions, geometry, and location of the shielding plate are optimized to generate a desired ion flux in a plasm... | 05/29/2007 |
| 7208831 | Semiconductor device having multilayer wiring structure and method, wherein connecting portion and wiring layer are formed of same layer A method for manufacturing a semiconductor device includes a step of forming a first groove in a first insulating film, forming a conductive film in the first groove, a step of selectively forming a second insulating film on the conductive film and the first insulat... | 04/24/2007 |
| 7153399 | Method and apparatus for producing uniform isotropic stresses in a sputtered film The invention provides a method and apparatus for producing uniform, isotropic stresses in a sputtered film. In the presently preferred embodiment, a new sputtering geometry and a new domain of transport speed are presented, which together allow the achievement of t... | 12/26/2006 |
| 7048869 | Plasma processing apparatus and a plasma processing method In an oxide film etching process, a plasma having a suitable ratio of CF3, CF2, CF, F is necessary, and there is a problem in that the etching characteristic fluctuates with a temperature fluctuation of the etching chamber. Using a UHF type ECR... | 05/23/2006 |
| 6972071 | High-speed symmetrical plasma treatment system A plasma treatment system (10) and related methods for rapidly treating a workpiece (56) with ions from a plasma having an ion density that is reproducibly uniform and symmetrical. The processing chamber (12) of the plasma treatment system (1... | 12/06/2005 |
| 6955741 | Semiconductor-processing reaction chamber The present application provides a PECVD reaction chamber for processing semiconductor wafers comprising a susceptor for supporting a semiconductor wafer inside the reaction chamber wherein the susceptor comprises a plurality vertical through-bores, a moving means f... | 10/18/2005 |
| 6905578 | Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure An apparatus and method for depositing plural layers of materials on a substrate within a single vacuum chamber allows high-throughput deposition of structures such as these for GMR and MRAM application. An indexing mechanism aligns a substrate with each of plural t... | 06/14/2005 |
| 6899798 | Reusable ceramic-comprising component which includes a scrificial surface layer Disclosed herein is a method of roughening a ceramic surface by forming mechanical interlocks in the ceramic surface by a chemical etching process, a thermal etching process, or a laser micromachining process. Also disclosed herein are components for use in semicond... | 05/31/2005 |
| 6855236 | Components for vacuum deposition apparatus and vacuum deposition apparatus therewith, and target apparatus A component for a vacuum deposition apparatus comprises a component body and a spray deposit formed on a surface of a component body. A spray deposit has surface roughness in which a mean spacing S of tops of local peak of profile is in the range from 50 to 150 μm,... | 02/15/2005 |
| 6736943 | Apparatus and method for vacuum coating deposition Vacuum coating deposition apparatus and methods employ a vacuum chamber with a superstructure to which deposition components in the vacuum chamber are mounted, such as a sputter target, substrate, etc. to provide a fixed relative position between them substantially ... | 05/18/2004 |
| 6726816 | Method for forming thin film, spheroid coated with thin film, light bulb using the spheroid and equipment for film formation The present invention provides a method for forming thin films, wherein thin films with a uniform thickness can be formed on substrates as objects such as spheroids, even when the films are formed by conventional film-formation methods using an incident particle bea... | 04/27/2004 |
| 6596138 | Sputtering apparatus A sputtering apparatus having a target jig that can suppress abnormal discharges such as micro-arcs is provided. A magnetron sputtering apparatus having a vacuum container in which a retaining section (an anode side) for retaining a wafer WF, a shutter, a... | 07/22/2003 |
| 6585871 | Method of film deposition on substrate surface and substrate produced by the method A method of film deposition is disclosed, which eliminates the conventional problem that a coating film having a component concentration gradient in the thickness direction and thus having a boundary with a compositional gradient or a coating film in whic... | 07/01/2003 |
| 6571729 | Apparatus for depositing a thin film on a data recording disk An apparatus for depositing a protective film on a data recording disk, including the steps of depositing a magnetic film layer as a data recording layer on a surface of a substrate while the substrate is at a magnetic film deposition temperature; heating... | 06/03/2003 |
| 6569783 | Graded composition diffusion barriers for chip wiring applications A barrier film for a semiconductor device structure. The barrier film includes a compound including nitrogen and at least one of titanium or tantalum, nitrogen in a concentration that varies within the barrier film, and oxygen in a concentration that vari... | 05/27/2003 |
| 6554969 | Acoustically enhanced deposition processes, and systems for performing same In general, the present invention is directed to acoustically enhanced deposition processes, and a system for performing same. In one embodiment, the method comprises providing a substrate having a layer of insulating material formed thereabove, the layer... | 04/29/2003 |
| 6500314 | Plasma etch reactor and method A plasma etch reactor 20 includes a upper electrode 24, a lower electrode 24, a peripheral ring electrode 26 disposed therebetween. The upper electrode 24 is grounded, the peripheral electrode 26 is powered by a high frequency AC power supply, while the l... | 12/31/2002 |
| 6454919 | Physical vapor deposition apparatus with deposition and DC target power control A physical vapor deposition apparatus is provided with at least one workpiece processing chamber and a programmable control device for controlling process variables within the processing chamber. The control device is programmed to vary the power to an al... | 09/24/2002 |
| 6436509 | Electrically insulating sealing structure and its method of use in a semiconductor manufacturing apparatus In accordance with the present invention, an insulating sealing structure useful in physical vapor deposition apparatus is provided. The insulating sealing structure is capable of functioning under high vacuum and high temperature conditions. The apparatu... | 08/20/2002 |
| 6372103 | Ultrashort pulse laser deposition of thin films Short pulse PLD is a viable technique of producing high quality films with properties very close to that of crystalline diamond. The plasma generated using femtosecond lasers is composed of single atom ions with no clusters producing films with high Sp | 04/16/2002 |
| 6352620 | Staged aluminum deposition process for filling vias The present invention is a semiconductor metallization process for providing complete via fill on a substrate and a planar metal surface, wherein the vias are free of voids and the metal surface is free of grooves. In one aspect of the invention, a refrac... | 03/05/2002 |
| 6344116 | Monocrystalline three-dimensional integrated-circuit technology Three technologies realize monocrystalline three-dimensional (3-D) integrated circuits: (1) silicon sputter epitaxy permitting fast growth at low temperature; (2) real-time pattern generation using a pixel-by-pixel programmable device to create a patterne... | 02/05/2002 |
| 6277253 | External coating of tungsten or tantalum or other refractory metal on IMP coils Embodiments include a method for depositing material onto a workpiece in a sputtering chamber. The method includes sputtering a target and a coil in said sputtering chamber. The coil may have a preformed multilayer structure formed outside of the sputteri... | 08/21/2001 |
| 6268045 | Hard material coating of a cemented carbide or carbide containing cermet substrate The present invention relates to a component, for example a tool, coated with a hard material, in particular diamond, a process for its production and a device for carrying out the process. The process for the production of the component coated with the h... | 07/31/2001 |
| 6228186 | Method for manufacturing metal sputtering target for use in DC magnetron so that target has reduced number of conduction anomalies Improved targets for use in DC_magnetron sputtering of aluminum or like metals are disclosed for forming metallization films having low defect densities. Methods for manufacturing and using such targets are also disclosed. Conductivity anomalies such as t... | 05/08/2001 |
| 6221221 | Apparatus for providing RF return current path control in a semiconductor wafer processing system Apparatus providing a low impedance RF return current path between a shield member and a pedestal in a semiconductor wafer processing chamber. The return path reduces RF voltage drop between the shield member and the pedestal during processing. The return... | 04/24/2001 |
| 6215087 | Plasma film forming method and plasma film forming apparatus Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film for... | 04/10/2001 |
