Did You Know...
...that Charles Goodyear performed some of his experiments on rubber while in debtor's prison? He was there so often he referred to it as his "hotel". Chronically in debt because of poor business sense and ill health, Goodyear depended on the generosity of friends and family. Even after he unlocked the secret to vulcanizing rubber, he was unable to improve his financial situation. When he died, his estate was $200,000 in debt.
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| Number | Title | Issue Date |
| 7763153 | Method and apparatus for forming a crystalline silicon thin film A hydrogen gas is supplied into a deposition chamber accommodating a silicon sputter target and a deposition target object, a high-frequency power is applied to said gas to generate plasma exhibiting Hα/SiH* from 0.3 to 1.3 between an emission spectral intensity HÎ... | 07/27/2010 |
| 7435300 | Dynamic film thickness control system/method and its utilization A dynamic film thickness control system/method and its utilization consisting of a minimum of one mask plate arranged between a substrate and a vapor source. A film thickness control device is utilized for real-time control over deposited film thickness and graduall... | 10/14/2008 |
| 7422655 | Apparatus for performing semiconductor processing on target substrate An apparatus for performing a semiconductor process on a target substrate (W) includes a lifting mechanism (48) disposed in a worktable (38) to assist transfer of the target substrate. The lifting mechanism includes a lifter pin (51) configured ... | 09/09/2008 |
| 7381293 | Convex insert ring for etch chamber A new and improved insert ring for a wafer support inside a processing chamber for the processing, particularly dry etching, of semiconductor wafer substrates. The insert ring includes a generally convex inner surface which faces the wafer support and defines a gap ... | 06/03/2008 |
| 7354482 | Film deposition device A film deposition device for depositing a film includes a depositing chamber for depositing the film with plasma. A plasma quantity monitoring device is disposed in the depositing chamber for monitoring a plasma quantity entering the depositing chamber at real time.... | 04/08/2008 |
| 7353379 | Methods for configuring a plasma cluster tool A method for configuring a plasma cluster tool is disclosed. The method includes generating a key file from option specifications, the key file encapsulating configuration restrictions specifically imposed on the plasma cluster tool. The method also includes generat... | 04/01/2008 |
| 7341644 | Method for predicting consumption of consumable part, method for predicting deposited-film thickness, and plasma processor There is not known a conventional method for predicting the consumed degree of consumable supplies and the thickness of deposited films without opening a processing chamber. A method for predicting the consumed degree of a consumable supply and the thickness ... | 03/11/2008 |
| 7335278 | Plasma processing apparatus and plasma processing method An electrostatic chuck 108 is provided on a lower electrode 106 provided inside a processing chamber 102 of an etching apparatus 100, and a conductive inner ring body 112a and an insulating outer ring body 112b | 02/26/2008 |
| 7329328 | Method for etch processing with end point detection thereof A method for performing process end point detection in a semiconductor substrate processing system by monitoring for an increase in a flow of backside gas above a predetermined limit. ... | 02/12/2008 |
| 7320941 | Plasma stabilization method and plasma apparatus There is disclosed a plasma technique in which a plasma generation technique frequently used in various fields including a semiconductor manufacturing process is used, and generation of plasma instability (high-speed impedance change of a plasma) can efficiently be ... | 01/22/2008 |
| 7312163 | Atomic layer deposition methods, and methods of forming materials over semiconductor substrates The invention includes methods in which at least two different precursors are flowed into a reaction chamber at different and substantially non-overlapping times relative to one another to form a material over at least a portion of a substrate, and in which at least... | 12/25/2007 |
| 7311797 | Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor Components of semiconductor processing apparatus comprise thermal sprayed yttria-containing coatings that provide erosion, corrosion and/or corrosion-erosion resistance in plasma atmospheres. The coatings can protect substrates from physical and/or chemical attack. | 12/25/2007 |
| 7300537 | Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor Components of semiconductor processing apparatus comprise thermal sprayed yttria-containing coatings that provide erosion, corrosion and/or corrosion-erosion resistance in plasma atmospheres. The coatings can protect substrates from physical and/or chemical attack. | 11/27/2007 |
| 7291360 | Chemical vapor deposition plasma process using plural ion shower grids A chemical vapor deposition process is carried out in a reactor chamber having a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower process region, each of the ion shower grids having plural orifices in mu... | 11/06/2007 |
| 7288491 | Plasma immersion ion implantation process One method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber includes initially depositing a seasoning film on the interior surfaces of the plasma reactor chamber before the workpiece is introduced, by introducing a seasoning... | 10/30/2007 |
| 7267724 | Thin-film disposition apparatus A dividing plate for a thin-film deposition apparatus divides the interior of the vacuum reaction chamber into a plasma discharge space and a film deposition process space, by fixing or connecting a plurality of laminated plates together by securely bonding them ove... | 09/11/2007 |
| 7261796 | Method and apparatus for aligning a machine tool A machine tool is provided comprising a base, a slide assembly attached to the base for supporting a tool and translating the tool along an axis, and a workpiece holder attached to the base. At least one of the slide assembly and the workpiece holder are movable lat... | 08/28/2007 |
| 7244474 | Chemical vapor deposition plasma process using an ion shower grid A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction r... | 07/17/2007 |
| 7235155 | Method and apparatus for monitoring plasma conditions using a monitoring ring A plasma processing system is provided that allows for monitoring a plasma processing system during plasma processing. The plasma processing system includes a processing chamber and a monitoring system for monitoring conditions of the processing chamber. By providin... | 06/26/2007 |
| 7220320 | Systems for producing semiconductors and members therefor The present invention provides members that are provided around a susceptor for mounting a semiconductor in a chamber for a semiconductor production system. Each member has a function of independently generating heat to heat the semiconductor, at least by radiation,... | 05/22/2007 |
| 7204913 | In-situ pre-coating of plasma etch chamber for improved productivity and chamber condition control A semiconductor processing chamber having a silicon containing pre-coat is provided. The chamber includes a top electrode in communication with a power supply and a processing chamber defined within a base, a sidewall extending from the base, and a top disposed on t... | 04/17/2007 |
| 7192878 | Method for removing post-etch residue from wafer surface A low-k dielectric film is deposited on the wafer. A metal layer is then deposited over the low-k dielectric film. A resist pattern is formed over the metal layer. The resist pattern is then transferred to the underlying metal layer to form a metal pattern. The resi... | 03/20/2007 |
| 7186298 | Wafer support system A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect ... | 03/06/2007 |
| 7182816 | Particulate reduction using temperature-controlled chamber shield Particle flaking is reduced in a semiconductor wafer processing apparatus by installing a chamber shield assembly in the chamber of the apparatus. The shield assembly includes a plurality of nested shields that are supported out of contact with each other and suspen... | 02/27/2007 |
| 7166187 | Segmented cold plate for rapid thermal processing (RTP) tool for conduction cooling The present invention is directed to a semiconductor thermal processing system and an apparatus for thermally cooling a semiconductor substrate. According to one aspect of the present invention, a semiconductor thermal processing system and associated apparatus and ... | 01/23/2007 |
| 7166200 | Method and apparatus for an improved upper electrode plate in a plasma processing system The present invention presents an improved upper electrode for a plasma processing system, wherein the design and fabrication of an electrode plate coupled to an upper assembly advantageously provides gas injection of a process gas with substantially minimal erosion... | 01/23/2007 |
| 7147719 | Double slit-valve doors for plasma processing In a substrate vacuum processing chamber, a second inner slit passage door apparatus and method to supplement the normal slit valve and its door at the outside of the chamber. The inner slit passage door, blocks the slit passage at or adjacent the substrate processi... | 12/12/2006 |
| 7132040 | Matching unit for semiconductor plasma processing apparatus This matching unit is used for a semiconductor plasma processing apparatus supplying high-frequency power via feeding line to an electrode provided in a chamber, and includes first and second variable capacitors, and a distributed constant circuit, which is structur... | 11/07/2006 |
| 7122096 | Method and apparatus for processing semiconductor In a semiconductor processing apparatus including a process chamber, a sample stand for holding a sample in the process chamber, and a process gas supply unit for supplying a process gas to the process chamber, a plurality of samples of a lot are successively suppli... | 10/17/2006 |
| 7121414 | Semiconductor cassette reducer A semiconductor cassette reducer has a first substantially U-shaped plate and a second substantially U-shaped plate. A number of wafer supports connect the first substantially U-shaped plate to the second substantially U-shaped plate. Several retention springs are a... | 10/17/2006 |
| 7070661 | Uniform gas cushion wafer support A workpiece is supported on a gas cushion to reduce mechanical stresses on the workpiece during processing. A plenum having a workpiece support flange for receiving the workpiece is connected to a gas supply. When gas flows into the plenum and pressure increases suf... | 07/04/2006 |
| 7070660 | Wafer holder with stiffening rib A wafer holder comprises a circular, disc-shaped main portion and a rib extending generally downward from a lower surface of the main portion. The rib encircles the vertical center axis of the wafer holder. The upper surface of the main portion has a wafer-receiving... | 07/04/2006 |
| 7067012 | CVD coating device The invention relates to a device for depositing especially, crystalline layers onto one or more, especially, also crystalline substrates in a process chamber using reaction gases which are guided into said process chamber, where they undergo pyrolytic reaction. The... | 06/27/2006 |
| 7052552 | Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD A method and apparatus are disclosed for depositing a dielectric film in a gap having an aspect ratio at least as large as 6:1. By cycling the gas chemistry of a high-density-plasma chemical-vapor-deposition system between deposition and etching conditions, the gap ... | 05/30/2006 |
| 7041341 | Process for the fabrication of oxide films The present invention is related to methods and apparatus for processing weak ferroelectric films on semiconductor substrates, including relatively large substrates, e.g., with 300 millimeter diameter. A ferroelectric film of zinc oxide (ZnO) doped with lithium (Li)... | 05/09/2006 |
| 7033443 | Gas-cooled clamp for RTP The present invention is directed to a semiconductor thermal processing apparatus and a method for thermally cooling a semiconductor substrate. According to one aspect of the present invention, a gas-cooled clamp and associated method is disclosed which provides coo... | 04/25/2006 |
| 7034285 | Beam source and beam processing apparatus A beam source has a plasma generating chamber and a gas inlet port for introducing a gas into the plasma generating chamber. The beam source includes a plasma generator for generating positive-negative ion plasma containing positive ions at a density of at least 10 | 04/25/2006 |
| 7033445 | Gridded susceptor Susceptor designs are provided for controlling damage to wafers, particularly during cold wafer drops-off on a hot susceptor. The designs include axisymmetric grid designs, such that thermal gradients are symmetrical in the circumferential (θ) direction and the sam... | 04/25/2006 |
| 7025858 | Apparatus for supporting wafer in semiconductor process The present invention provides an apparatus for supporting a wafer in a semiconductor process. The apparatus includes an electrostatic chuck, a focus ring and a conductive material. The electrostatic chuck has a first fillister in its periphery. When a DC power is a... | 04/11/2006 |
| 7024266 | Substrate processing apparatus, method of controlling substrate, and exposure apparatus A substrate processing apparatus includes a first chamber, a second chamber which has a first valve, a second valve and a chuck, wherein a substrate is transferred to the second chamber through the first valve, held by the chuck in the second chamber, and then trans... | 04/04/2006 |
