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"I hate what they've done to my child...I would never let my own children watch it. "
Vladimir Zworykin, television pioneer ; Talking about an invention in which he played a critical role.
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| Number | Title | Issue Date |
| 3993533 | Method for making semiconductors for solar cells The invention relates to a method for producing a desired thin semiconductor film for use in solar cells. The desired semiconductor is grown epitaxially on a second semiconductor film which may be epitaxial on a third semiconductor. The second semiconduct... | 11/23/1976 |
| 3988774 | Process for producing a photodiode sensitive to infrared radiation A process for producing a photodiode sensitive to infrared radiation, obtained by the planar technique, constituted by a semiconducting material comprising a substrate of type p (or n) and a zone of type n (or p) forming the junction, wherein a thin layer... | 10/26/1976 |
| 3983022 | Process for planarizing a surface A passivating film, such as silicon dioxide, which has been sputter deposited over a metal stripe in a thin film device is planarized by a resputtering. Since the contour of the sputter-deposited film follows the contour of the metal stripe, the planariza... | 09/28/1976 |
| 3979271 | Deposition of solid semiconductor compositions and novel semiconductor materials Solid layer semiconductor compositions are deposited by the simultaneous sputtering from a sputter target and electrically discharge a reacting gas preferably by application of an RF potential. Preferably, the method is used to make solid solution layers ... | 09/07/1976 |
| 3966577 | Dielectrically isolated semiconductor devices The invention is a method of fabricating dielectrically isolated semiconductor regions adapted for the construction of an integrated circuit on an epitaxial wafer wherein the epitaxial wafer has a first layer of monocrystalline n+ type silicon of a predet... | 06/29/1976 |
| 3964986 | Method of forming an overlayer including a blocking contact for cadmium selenide photoconductive imaging bodies A major surface of a cadmium selenide body is exposed within a reactive sputtering apparatus to controlled bombardment with electrons, and to controlled simultaneous reactive sputter deposition of an overlayer including aluminum and oxygen.... | 06/22/1976 |
| 3953266 | Process for fabricating a semiconductor device A method of fabricating a semiconductor composite comprises providing a semiconductor substrate having a platinum layer, masking the platinum layer with a chromium mask layer, applying a patterned photoresist layer over the chromium mask layer, etching aw... | 04/27/1976 |
| 3951709 | Process and material for semiconductor photomask fabrication A process step and material for use in the manufacture of semiconductor photomasks. To facilitate the etching of unmasked chromium, gold, and other metals capable of forming oxychloride derivatives on preselected portions of a substrate material, the mate... | 04/20/1976 |
| 3949119 | Method of gas doping of vacuum evaporated epitaxial silicon films A new technique for the controlled incorporation of doping impurities into homoepitaxial silicon films by gas bombardment with arsine and diborane has been investigated. Hall effect and conductivity measurements have been used to show that P and N-type si... | 04/06/1976 |
| 3947298 | Method of forming junction regions utilizing R.F. sputtering A semiconductor integrated circuit in which accurate location of emitter contacts on diffused emitter regions is achieved by using an apertured multilayered mask on the surface of a semiconductor body through which the impurity forming the emitter region ... | 03/30/1976 |
