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| Number | Title | Issue Date |
| 8425738 | Method for depositing of barrier layers on a plastic substrate as well as coating device therefor and a layer system The present invention refers to a coating device for depositing of barrier layers on a plastic substrate comprising a first coating station for depositing a first layer comprising a metal and a second coating station for depositing a second layer comprising a resin,... | 04/23/2013 |
| 8414747 | High-throughput HDP-CVD processes for advanced gapfill applications Methods are provided of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A silicon-containing gas, an oxygen-containing gas, and a fluent gas are flowed into t... | 04/09/2013 |
| 8377265 | Method of forming inorganic insulating layer and method of fabricating array substrate for display device using the same A method of forming an inorganic insulating layer on a substrate comprises supplying a mixed gas between the substrate and a target, and generating a plasma between the substrate and the target. The target comprises a silicon-based material. The method further compr... | 02/19/2013 |
| 8349146 | Method for manufacturing nickel silicide nano-wires A method for making nickel silicide nano-wire, the method includes the following steps. Firstly, providing a silicon substrate and a growing device, and the growing device including a reacting room. Secondly, forming a silicon dioxide layer on a surface of the silic... | 01/08/2013 |
| 8152972 | Method for forming fine particles, method for forming concavities and convexities, and device for forming fine particles A method of the present invention for forming fine particles includes forming fine particles on a substrate by supplying, in the presence of inert gas, to the substrate, atoms or molecules of a supply material capable of being combined with a material constituting a... | 04/10/2012 |
| 7988835 | Silicon dot forming method and silicon dot forming apparatus There are provided a method and an apparatus which form silicon dots having substantially uniform particle diameters and exhibiting a substantially uniform density distribution directly on a substrate at a low temperature. A hydrogen gas (or a hydrogen gas and a sil... | 08/02/2011 |
| 7887677 | Silicon object forming method and apparatus A silicon object formation target substrate is arranged in a first chamber, a silicon sputter target is arranged in a second chamber communicated with the first chamber, plasma for chemical sputtering is formed from a hydrogen gas in the second chamber, chemical spu... | 02/15/2011 |
| 7842168 | Method for producing silicon oxide film and method for producing optical multilayer film The invention provides a method for producing a silicon oxide film, whereby a film having uniform optical constants such as refractive index, absorption coefficient, etc. can be formed continuously at a high deposition rate. A method for producing a silicon o... | 11/30/2010 |
| 7658822 | SiO:Si composite articles and methods of making same Article are made from silicon oxide and electrically conductive doped silicon materials that are joined in a protective environment to yield a composite SiOx:Si material that exhibits the properties of SiOx and yet is electrically conductive du... | 02/09/2010 |
| 7601246 | Methods of sputtering a protective coating on a semiconductor substrate Methods of depositing a protective coating of a silicon-containing or metallic material onto a semiconductor substrate include sputtering such material from an electrode onto a semiconductor substrate in a plasma processing chamber. The protective material can be de... | 10/13/2009 |
| 7354523 | Methods for sidewall etching and etching during filling of a trench A method for sidewall etching includes providing a substrate having a trench defined therein, with the trench having fill material disposed over a bottom thereof, along a sidewall thereof, and at the trench opening. The fill material along the sidewall of the trench... | 04/08/2008 |
| 7316867 | Method for manufacturing a multi-layered thin film for use as an anode in a lithium secondary battery A thin film for an anode of a lithium secondary battery having a current collector and an anode active material layer formed thereon is provided. The anode active material layer is a multi-layered thin film formed by stacking a silver (Ag) layer and a silicon-metal ... | 01/08/2008 |
| 7300457 | Self-supporting metallic implantable grafts, compliant implantable medical devices and methods of making same Implantable medical grafts fabricated of metallic or pseudometallic films of biocompatible materials having a plurality of microperforations passing through the film in a pattern that imparts fabric-like qualities to the graft or permits the geometric deformation of... | 11/27/2007 |
| 7294583 | Methods for the use of alkoxysilanol precursors for vapor deposition of SiOfilms A method for depositing conformal dielectric films uses alkoxy silanol or silanediol precursors and oxidizing and/or hydrolyzing agents. The method produces a material with liquid-like flow properties capable of achieving improved high aspect ratio gap fill more eff... | 11/13/2007 |
| 7294404 | Graded photocatalytic coatings The invention provides graded photocatalytic coatings. In one aspect, the invention provides a substrate carrying a photocatalytic coating that includes a first graded film region and a second graded film region. The first graded film region has a substantially cont... | 11/13/2007 |
| 7282121 | Manufacturing method and apparatus of phase shift mask blank There is disclosed a manufacturing method of a phase shift mask blank in which dispersions of phase angle and transmittance among blanks can be reduced as much as possible and yield is satisfactory. In the manufacturing method of the phase shift mask blank, a proces... | 10/16/2007 |
| 7273534 | Optical device substrate film-formation apparatus, optical disk substrate film-formation method, substrate holder manufacture method, substrate holder, optical disk and a phase-change recording type of optical disk In an optical disk substrate film-formation apparatus which prepared an optical disk by forming a thin film on a substrate, the optical disk substrate is held by a holder section. A contact support surface is provided to the holder section which closely contacts at ... | 09/25/2007 |
| 7263707 | Information processing medium and information processing apparatus using the same An information processing medium includes a substrate, a single layered or multilayered thin film layer formed on the substrate, and a thin protective film formed to cover at least one surface of the thin film layer. The thin protective film is mainly comprised of a... | 08/28/2007 |
| 7262938 | Flying-type disk drive slider with self-blending contact pad The invention is generally directed to a slider that is particularly suited for dynamic load/unload disk drive designs. This slider desirably addresses potential disk damage associated with contact between sharp edges of the slider of the disk drive and the data sto... | 08/28/2007 |
| 7253109 | Method of depositing a tantalum nitride/tantalum diffusion barrier layer system We have discovered a method of providing a thin, approximately from about 2 Å to about 100 Å thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the ... | 08/07/2007 |
| 7235160 | Hollow cathode sputtering apparatus and related method The present invention provides an improved hollow cathode method for sputter coating a substrate. The method of the invention comprises providing a channel for gas to flow through, the channel defined by a channel defining surface wherein one or more portions of the... | 06/26/2007 |
| 7223675 | Method of forming pre-metal dielectric layer A method of forming a pre-metal dielectric (PMD) layer is disclosed. In the method, after a nitride liner layer is formed on a substrate having a transistor, a USG layer is deposited thereon and then planarized. Next, ion implantation and annealing are performed for... | 05/29/2007 |
| 7203031 | Substrate for thin-film magnetic head and method of manufacturing the substrate A substrate for a thin-film magnetic head includes a ceramic base and an undercoat film of amorphous SiC, which is supported on the ceramic base. ... | 04/10/2007 |
| 7198992 | Method of manufacturing a semiconductor device comprising doping steps using gate electrodes and resists as masks The present invention is characterized in that a semiconductor film containing a rare gas element is formed on a crystalline semiconductor film obtained by using a catalytic element via a barrier layer, and the catalytic element is moved from the crystalline semicon... | 04/03/2007 |
| 7196016 | Fabrication process for preparing recording head sliders made from silicon substrates with SiOovercoats A method for fabricating recording head sliders made from silicon substrates, is described. A Silicon wafer with a SiO2 overcoat is provided, and a layer of material which is resistant to Deep Reactive Ion Etching (DRIE) is deposited on the SiO2 | 03/27/2007 |
| 7196929 | Method for operating a memory device having an amorphous silicon carbide gate insulator A floating gate transistor has a reduced barrier energy at an interface with an adjacent amorphous silicon carbide (a-SiC) gate insulator, allowing faster charge transfer across the gate insulator at lower voltages. Data is stored as charge on the floating gate. The... | 03/27/2007 |
| 7169666 | Method of forming a device having a gate with a selected electron affinity A floating gate transistor has a reduced barrier energy at an interface with an adjacent gate insulator, allowing faster charge transfer across the gate insulator at lower voltages. Data is stored as charge on the floating gate. The data charge retention time on the... | 01/30/2007 |
| 7154153 | Memory device A floating gate transistor has a reduced barrier energy at an interface with an adjacent gate insulator, allowing faster charge transfer across the gate insulator at lower voltages. Data is stored as charge on the floating gate. The data charge retention time on the... | 12/26/2006 |
| 7138182 | Temperable high shading performance coatings The invention provides temperable high shading performance low-emissivity coatings. The invention also provides insulating glass units, monolithic panes, and other substrates bearing such coatings. Further, the invention provides methods of producing coated substrat... | 11/21/2006 |
| 7138343 | Method of producing a substrate with a surface treated by a vacuum treatment process, use of said method for the production of coated workpieces and plasma treatment chamber In order to produce substrate surfaces with a given two-dimensional surface distribution arising from a treatment using a vacuum treatment process, an inhomogeneous plasma (5) with a density distribution is generated and moved relative to the substrate (9 | 11/21/2006 |
| 7135418 | Optimal operation of conformal silica deposition reactors Methods of forming conformal films that reduce the amount of metal-containing precursor and/or silicon containing precursor materials required are described. The methods increase the amount of film grown following each dose of metal-containing and/or silicon-contain... | 11/14/2006 |
| 7135097 | Box-shaped facing-targets sputtering apparatus and method for producing compound thin film Disclosed is a box-shaped facing-targets sputtering apparatus capable of forming, at low temperature, a compound thin film of high quality while causing minimal damage to an underlying layer. The box-shaped facing-targets sputtering apparatus includes a box-shaped f... | 11/14/2006 |
| 7129189 | Aluminum phosphate incorporation in silica thin films produced by rapid surface catalyzed vapor deposition (RVD) An method employing atomic layer deposition (ALD) and rapid vapor deposition (RVD) techniques conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film applies a phosphate-doped silicate film using atomic laye... | 10/31/2006 |
| 7125737 | Robust Group III light emitting diode for high reliability in standard packaging applications A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitri... | 10/24/2006 |
| 7122252 | High shading performance coatings The invention provides high shading performance, low-emissivity coatings. The invention provides a monolithic pane bearing a high shading performance, low-emissivity coating. The invention also provides an insulating glass unit bearing a high shading performance, lo... | 10/17/2006 |
| 7118656 | Thin film stent A method for fabricating a stent or other medical device by creating a free standing thin film of metal. ... | 10/10/2006 |
| 7109129 | Optimal operation of conformal silica deposition reactors Methods of forming conformal films that reduce the amount of metal-containing precursor and/or silicon containing precursor materials required are described. The methods increase the amount of film grown following each dose of metal-containing and/or silicon-contain... | 09/19/2006 |
| 7109548 | Operating a memory device A floating gate transistor has a reduced barrier energy at an interface with an adjacent gate insulator, allowing faster charge transfer across the gate insulator at lower voltages. Data is stored as charge on the floating gate. The data charge retention time on the... | 09/19/2006 |
| 7105253 | Method of and apparatus for manufacturing lithium secondary cell A method of manufacturing a lithium secondary cell capable of preventing an active material layer from oxidation and moisture absorption is obtained. This method of manufacturing a lithium secondary cell comprises steps of forming an active material layer on a colle... | 09/12/2006 |
| 7101026 | Ink jet recording head and ink jet recorder having a compression film with a compressive stress and removal part incorporated therein To provide an ink jet recording head with a decreased initial deflection amount of a diaphragm and an ink jet recorder comprising the ink jet recording head. An ink jet recording head which has a flow passage formation substrate 10 where pressure generation c... | 09/05/2006 |
