Did You Know...
...that when IBM conducted a market study of Chester Carlson's invention in 1959, the company concluded that it would take only 5000 units of his new product to saturate the market? IBM therefore declined to be part of the new product introduction. Too bad for IBM. Carlson's invention was the xerography process, and his new product was the beginning of the Xerox Corporation. It is estimated that every day, worldwide, 3,000,000,000 copies are made!!
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| Number | Title | Issue Date |
| 8142609 | Plasma processing apparatus A plasma processing apparatus including a mounting table that includes a mounting table body having a temperature adjusted to be a predetermined level, and an electrostatic chuck disposed on an upper portion of the mounting table body, joined thereto with an acrylic... | 03/27/2012 |
| 7854821 | Substrate processing apparatus A substrate processing apparatus includes a heat transfer gas supply mechanism to supply a heat transfer gas through a supply passage into a portion between a worktable and a substrate to improve thermal conductivity between therebetween. Under the control of a cont... | 12/21/2010 |
| 7837828 | Substrate supporting structure for semiconductor processing, and plasma processing device A substrate supportingstructure (50) for semiconductor processing, comprising a mounting table (51) for placing a processed substrate (W) disposed in a processing chamber (20), wherein temperature control spaces (507) for storing the flui... | 11/23/2010 |
| 7771564 | Plasma processing apparatus In a plasma processing apparatus equipped with a vacuum vessel and a sample table which is arranged within the vacuum vessel and has a sample mounting plane where a sample is mounted on an upper portion, for forming plasma within the processing chamber so as to proc... | 08/10/2010 |
| 7713380 | Method and apparatus for backside polymer reduction in dry-etch process A method for preventing the formation of contaminating polymeric films on the backsides of semiconductor substrates includes providing an oxygen-impregnated focus ring and/or an oxygen-impregnated chuck that releases oxygen during etching operations. The method furt... | 05/11/2010 |
| 7615133 | Electrostatic chuck module and cooling system An electrostatic chuck module for a semiconductor manufacturing apparatus which can be cooled with water and in which there is no penetration leak includes an electrostatic chuck plate of alumina and a cooling plate which is bonded to the electrostatic chuck, wherei... | 11/10/2009 |
| 7427329 | Temperature control for single substrate semiconductor processing reactor A reactor for heat treatment of a substrate having a process chamber within a substrate enclosing structure, and a support structure configured to position a substrate at a predetermined spacing between the upper part and the bottom part within the process chamber d... | 09/23/2008 |
| 7422637 | Processing chamber configured for uniform gas flow An apparatus and method for performing uniform gas flow in a processing chamber is provided. In one embodiment, an apparatus is an edge ring that includes an annular body having an annular seal projecting therefrom is provided. The seal is coupled to a side of the a... | 09/09/2008 |
| 7422655 | Apparatus for performing semiconductor processing on target substrate An apparatus for performing a semiconductor process on a target substrate (W) includes a lifting mechanism (48) disposed in a worktable (38) to assist transfer of the target substrate. The lifting mechanism includes a lifter pin (51) configured ... | 09/09/2008 |
| 7396432 | Composite shadow ring assembled with dowel pins and method of using A composite shadow ring that is constructed of an upper ring and a lower ring assembled together by a plurality of dowel pins and a method for using the ring. The upper ring and the lower ring each has a predetermined outside diameter that is substantially the same,... | 07/08/2008 |
| 7393418 | Susceptor A susceptor at least a surface thereof being coated with SiC, includes a recess where an wafer is mounted, the recess having an round portion disposed on a lower portion of an outer circumferential portion of the recess, a ring-shaped SiC crystal growth surface port... | 07/01/2008 |
| 7393433 | Plasma processing apparatus, semiconductor manufacturing apparatus and electrostatic chucking unit used thereof A wiring member which becomes substantially symmetrical on the plane of an electrostatic chuck unit is connected to the tip end of an RF introduction rod between the RF introduction rod and the electrostatic chuck unit in order to make uniform generation of an elect... | 07/01/2008 |
| 7381293 | Convex insert ring for etch chamber A new and improved insert ring for a wafer support inside a processing chamber for the processing, particularly dry etching, of semiconductor wafer substrates. The insert ring includes a generally convex inner surface which faces the wafer support and defines a gap ... | 06/03/2008 |
| 7381276 | Susceptor pocket with beveled projection sidewall An apparatus for holding a semiconductor substrate comprises a plate having a pocket which holds the substrate, wherein the pocket comprises a lower surface and an inner edge. The inner edge comprises a plurality of members extending radially inward to reduce the ar... | 06/03/2008 |
| RE40264 | Multi-temperature processing The present invention provides a technique, including a method and apparatus, for etching a substrate in the manufacture of a device. The apparatus includes a chamber and a substrate holder disposed in the chamber. The substrate holder has a selected thermal mass to... | 04/29/2008 |
| 7361230 | Substrate processing apparatus In the substrate processing apparatus, a ceramic module for mounting a substrate has a flat plate portion having an electric circuitry and a ceramic base body, and as at least a part of a surface of the flat plate portion other than the surface mounting the substrat... | 04/22/2008 |
| 7361016 | Temperature control assembly for use in etching processes and an associated retrofit method A temperature control assembly for use in etching processes includes a housing, a cooling conduit, fasteners, and a mounting block. The fasteners couple to the housing and operate to associate the cooling conduit, which is formed from a non-corrosive metallic materi... | 04/22/2008 |
| 7347901 | Thermally zoned substrate holder assembly A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature... | 03/25/2008 |
| 7338578 | Step edge insert ring for etch chamber An insert ring for a wafer support inside a processing chamber for the processing, particularly dry etching, of semiconductor wafer substrates. The insert ring has a generally step-shaped cross-sectional configuration which defines a perpendicular gap or flow space ... | 03/04/2008 |
| 7335278 | Plasma processing apparatus and plasma processing method An electrostatic chuck 108 is provided on a lower electrode 106 provided inside a processing chamber 102 of an etching apparatus 100, and a conductive inner ring body 112a and an insulating outer ring body 112b | 02/26/2008 |
| 7329328 | Method for etch processing with end point detection thereof A method for performing process end point detection in a semiconductor substrate processing system by monitoring for an increase in a flow of backside gas above a predetermined limit. ... | 02/12/2008 |
| 7320733 | Electron bombardment heating apparatus and temperature controlling apparatus and control method thereof An electron bombardment heating apparatus, in which thermions emitted from filaments 9 are accelerated and impinge upon a heating plate 2, so as to heat the heating plate 2, wherein a peripheral wall of a heated material supporting member 1 | 01/22/2008 |
| 7311797 | Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor Components of semiconductor processing apparatus comprise thermal sprayed yttria-containing coatings that provide erosion, corrosion and/or corrosion-erosion resistance in plasma atmospheres. The coatings can protect substrates from physical and/or chemical attack. | 12/25/2007 |
| 7311782 | Apparatus for active temperature control of susceptors A method and an apparatus utilized for thermal processing of substrates during semiconductor manufacturing. The method includes heating the substrate to a predetermined temperature using a heating assembly, cooling the substrate to the predetermined temperature usin... | 12/25/2007 |
| 7300537 | Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor Components of semiconductor processing apparatus comprise thermal sprayed yttria-containing coatings that provide erosion, corrosion and/or corrosion-erosion resistance in plasma atmospheres. The coatings can protect substrates from physical and/or chemical attack. | 11/27/2007 |
| 7279048 | Semiconductor manufacturing apparatus To provide a semiconductor manufacturing device, which is provided with a wafer holder capable of improving the cooling rate of a heater and retaining the homogeneity of the temperature distribution of the heater at cooling time and which can markedly shorten the ti... | 10/09/2007 |
| 7279068 | Temperature control assembly for use in etching processes A temperature control assembly for use in etching processes includes a housing, a cooling conduit, fasteners, and a mounting block. The fasteners couple to the housing and operate to associate the cooling conduit, which is formed from a non-corrosive metallic materi... | 10/09/2007 |
| 7252737 | Pedestal with integral shield Generally, a substrate support member for supporting a substrate is provided. In one embodiment, a substrate support member for supporting a substrate includes a body coupled to a lower shield. The body has an upper surface adapted to support the substrate and a low... | 08/07/2007 |
| 7248456 | Electrostatic chuck An electrostatic chuck is provided which includes a circular ceramic plate having an electrostatic attractive electrode, a mounting surface for supporting a waferhich is formed on one of the main surfaces of the circular ceramic plate, an annular gas groove formed o... | 07/24/2007 |
| 7244311 | Heat transfer system for improved semiconductor processing uniformity A plasma processing system and methods for processing a substrate using a heat transfer system are provided. The heat transfer system, which is capable of producing a high degree of processing uniformity across the surface of a substrate, comprises a uniformity pede... | 07/17/2007 |
| 7235137 | Conductor treating single-wafer type treating device and method for semi-conductor treating A single-substrate processing apparatus (20) has a worktable (40) disposed in a process chamber (24), which accommodates a target substrate (W). The worktable (40) has a thermally conductive mount surface (41) to place the target s... | 06/26/2007 |
| 7220319 | Electrostatic chucking stage and substrate processing apparatus This application discloses the structure of an ESC stage where a chucking electrode is sandwiched by a moderation layer and a covering layer. The moderation layer and the covering layer have the thermal expansion coefficients between the dielectric plate and the chu... | 05/22/2007 |
| 7211170 | Twist-N-Lock wafer area pressure ring and assembly Wafer area pressure rings used to confine plasma in plasma processing chambers which are manufactured with bores therein such that replacement of the pressure rings during routine or repair maintenance is significantly eased. The bores allows the pressure rings to b... | 05/01/2007 |
| 7211154 | Electrode-built-in susceptor An electrode-built-in susceptor is formed by a susceptor base body which is made of an aluminium-nitride-group-sintered-member on one of which surface a plate sample is mounted, an inner electrode which is built in the susceptor member, a power supplying terminal wh... | 05/01/2007 |
| 7208067 | Method and system for monitoring RF impedance to determine conditions of a wafer on an electrostatic chuck A method and system for monitoring and/or controlling the conditions of a wafer on an electrostatic chuck during plasma processing. The method and system include utilizing backflow gas pressure and DC clamping voltage as control variables to adjust the wafer tempera... | 04/24/2007 |
| 7208066 | Substrate processing apparatus and substrate processing method On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. ... | 04/24/2007 |
| 7204888 | Lift pin assembly for substrate processing Embodiments of the present invention provide an apparatus for constraining and supporting the lift pins to prevent or minimize lateral movement of the lift pins that causes substrate hand-off problems and associated degradation in substrate processing characteristic... | 04/17/2007 |
| 7204913 | In-situ pre-coating of plasma etch chamber for improved productivity and chamber condition control A semiconductor processing chamber having a silicon containing pre-coat is provided. The chamber includes a top electrode in communication with a power supply and a processing chamber defined within a base, a sidewall extending from the base, and a top disposed on t... | 04/17/2007 |
| 7180242 | Formation of a field reversed configuration for magnetic and electrostatic confinement of plasma A system and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrostatica... | 02/20/2007 |
| 7175737 | Electrostatic chucking stage and substrate processing apparatus This application discloses the structure of an ESC stage where a chucking electrode is sandwiched by a moderation layer and a covering layer. The moderation layer and the covering layer have the thermal expansion coefficients between the dielectric plate and the chu... | 02/13/2007 |
