U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Icon_funbox Bizarre Patents

Patent No. 6055910

/patents/6055910.html

A gun that fires a missile, powered by gas "discharged by the operator of the toy."

Newsletter  PatentStorm News

Make the Most of Our Site

See this month's Top Inventors and Most Cited Patents.

Stay on top of the latest innovations by subscribing to an RSS feed.

Registered users: Manage your profile.

 

Class 156/345.51 - With workpiece support


Subclass of Class 156 - Adhesive bonding and miscellaneous chemical manufacture
Definition: Apparatus including a heated, cooled, movable, or structurally
No. of patents: 463
Last issue date: 03/20/2012


1                      
NumberTitleIssue Date
8137501Bevel clean device
An apparatus for removing material on a bevel of a wafer is provided. A wafer support with a diameter that is less than the diameter of the wafer, wherein the wafer support is on a first side of the wafer, and wherein an outer edge of the wafer extends beyond the wa...
03/20/2012
8114247Plasma processing apparatus and focus ring
A plasma processing apparatus and a focus ring enables to perform uniform plasma processing over the entire surface of a substrate to be processed to thereby improve in-surface uniformity of plasma processing compared with conventional cases. The focus ring is dispo...
02/14/2012
8043472Substrate processing apparatus and focus ring
A substrate processing apparatus that can reliably improve the efficiency of heat transfer between a focus ring and a mounting stage. A housing chamber with the interior thereof evacuated houses a substrate. The substrate is mounted on a mounting stage that is dispo...
10/25/2011
8038837Ring-shaped component for use in a plasma processing, plasma processing apparatus and outer ring-shaped member
A ring-shaped component for use in a plasma processing includes an inner ring-shaped member provided to surround an outer periphery of a substrate to be subjected to the plasma processing and an outer ring-shaped member provided to surround an outer periphery of the...
10/18/2011
8002946Mask etch plasma reactor with cathode providing a uniform distribution of etch rate
A plasma reactor for etching a workpiece such as a rectangular or square mask, includes a vacuum chamber having a ceiling and a sidewall and a workpiece support pedestal within the chamber including a cathode having a surface for supporting a workpiece, the surface ...
08/23/2011
8002947Plasma treatment system and cleaning method of the same
A plasma treatment apparatus has a reaction vessel (11) provided with a top electrode (13) and a bottom electrode (14), and the first electrode is supplied with a VHF band high frequency power from a VHF band high frequency power source (32
08/23/2011
7883602Electrode assembly for the removal of surface oxides by electron attachment
An apparatus and a method comprising same for removing metal oxides from a substrate surface are disclosed herein. In one particular embodiment, the apparatus comprises an electrode assembly that has a housing that is at least partially comprised of an insulating ma...
02/08/2011
7842160Semiconductor producing device and semiconductor device producing method
A tubular electrode (215) and a tubular magnet (216) are installed on an external section of a processing furnace (202) for an MMT device. A susceptor (217) for holding a wafer (200) is installed inside a processing chamber (201...
11/30/2010
7837827Edge ring arrangements for substrate processing
A method for processing a substrate in a plasma processing chamber is provided. The substrate is disposed above a chuck and surrounded by a first edge ring. The first edge ring is electrically isolated from the chuck. The method includes providing a second edge ring...
11/23/2010
7828928Vacuum processing apparatus
A vacuum processing apparatus includes an outer chamber comprising a vacuum container, an inner chamber in which a plasma used for processing a wafer is generated, the inner chamber being detachably disposed inside of the outer chamber, a wafer holder on which the w...
11/09/2010
7771563Systems and methods for achieving isothermal batch processing of substrates used for the production of micro-electro-mechanical-systems
A system and method for processing substrates that achieves isothermal and uniform fluid flow processing conditions for a plurality of substrates. In one aspect, the invention is a system and method that utilizes matching the emissivity value of the surfaces of a pr...
08/10/2010
7763147Arc suppression plate for a plasma processing chamber
A plasma processing chamber configured to generate a plasma is provided. The plasma processing chamber includes a substrate support assembly which includes a substrate support that is capable of supporting a substrate. The plasma processing chamber further includes ...
07/27/2010
7740739Plasma processing apparatus and method
A plasma processing apparatus includes a gas ring forming a portion of a vacuum processing chamber and having a blowing port for a processing gas, a bell jar to define a vacuum processing chamber, an antenna for supplying an RF electric field into the vacuum process...
06/22/2010
7736462Installation for processing a substrate
The invention relates to an installation, in particular a vacuum processing installation for processing a substrate (130), in particular a semiconductor wafer, comprising a processing station. Said installation comprises a frame (110), to which is clam...
06/15/2010
7708860Plasma processing apparatus
For a plasma processing apparatus that performs an etching process for the face of a wafer opposite the circuit formation face, ceramic insulating films having a ring shape are positioned on the mounting face of an electrode member in consonance with the location of...
05/04/2010
7678226Method and apparatus for an improved bellows shield in a plasma processing system
The present invention presents an improved bellows shield for a plasma processing system, wherein the design and fabrication of the bellows shield coupled to a substrate holder electrode advantageously provides protection of a bellows with substantially minimal eros...
03/16/2010
7645357Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency
A plasma reactor for processing a workpiece includes a reactor chamber and a workpiece support within the chamber, the chamber having a ceiling facing the workpiece support, a capacitively coupled plasma source power applicator comprising a source power electrode at...
01/12/2010
7601242Plasma processing system and baffle assembly for use in plasma processing system
The present invention presents a baffle assembly located in a plasma processing system, comprising a baffle carrier attached to the plasma processing system, and at least two baffle inserts having a plurality of passages therethrough, the at least two baffle inserts...
10/13/2009
7585386Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method
A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply syste...
09/08/2009
7582186Method and apparatus for an improved focus ring in a plasma processing system
A focus ring configured to be coupled to a substrate holder comprises a first surface exposed to a process; a second surface, opposite the first surface, for coupling to an upper surface of the substrate holder; an inner radial edge for facing a periphery of a subst...
09/01/2009
7544270Apparatus for processing a substrate
An apparatus includes a plasma process chamber and a support element capable of supporting a substrate inside the plasma process chamber. At least one plasma control element is placed adjacent to a peripheral portion of the support element such that the plasma contr...
06/09/2009
7524397Lower electrode design for higher uniformity
A plasma processing system for processing a substrate is disclosed. The plasma processing system includes a process chamber within which a plasma is both ignited and sustained for processing. The plasma processing system further includes an electrode disposed at the...
04/28/2009
7431813Multi-chambered substrate processing equipment having sealing structure between chambers thereof, and method of assembling such equipment
Sealing structure provided between a transfer chamber and a chamber, such as a process chamber, connected to the transfer chamber includes an insert member, a docking member, and annular seals. The insert member is fixed to the exterior of the transfer chamber and t...
10/07/2008
7425238Substrate holding device
Disclosed is a wafer chuck, which has protrusions for supporting a substrate, for attracting and holding the substrate by negative pressure while the substrate is being supported by the protrusions. The wafer chuck includes pin-shaped protrusions dispersed on a suct...
09/16/2008
7422656Dry etching method and apparatus for use in the LCD device
A dry etching step during the manufacturing of a substrate for a liquid crystal display (LCD) device is improved by placing the substrate at a predetermined distance away from the lower electrode to prevent damage of the substrate due to electrostatic formed therebe...
09/09/2008
7422637Processing chamber configured for uniform gas flow
An apparatus and method for performing uniform gas flow in a processing chamber is provided. In one embodiment, an apparatus is an edge ring that includes an annular body having an annular seal projecting therefrom is provided. The seal is coupled to a side of the a...
09/09/2008
7422655Apparatus for performing semiconductor processing on target substrate
An apparatus for performing a semiconductor process on a target substrate (W) includes a lifting mechanism (48) disposed in a worktable (38) to assist transfer of the target substrate. The lifting mechanism includes a lifter pin (51) configured ...
09/09/2008
7418921Plasma CVD apparatus for forming uniform film
A plasma CVD film formation apparatus includes: a reaction chamber; a shower plate installed inside the reaction chamber; and a susceptor for placing a wafer thereon installed substantially parallel to and facing the shower plate. The shower plate has a surface faci...
09/02/2008
7413628Substrate treatment method and substrate treatment apparatus
A substrate treatment method for treating a substrate by supplying a treatment liquid to the substrate while rotating the substrate. The method comprises the steps of: performing a first substrate rotation process for rotating the substrate while clamping the substr...
08/19/2008
7396432Composite shadow ring assembled with dowel pins and method of using
A composite shadow ring that is constructed of an upper ring and a lower ring assembled together by a plurality of dowel pins and a method for using the ring. The upper ring and the lower ring each has a predetermined outside diameter that is substantially the same,...
07/08/2008
7396415Apparatus and methods for isolating chemical vapor reactions at a substrate surface
An apparatus and method for processing a substrate is provided. The apparatus comprises a reaction chamber, a substrate holder within the chamber, and first and second injector components. The reaction chamber has an upstream end and a downstream end, between which ...
07/08/2008
7393433Plasma processing apparatus, semiconductor manufacturing apparatus and electrostatic chucking unit used thereof
A wiring member which becomes substantially symmetrical on the plane of an electrostatic chuck unit is connected to the tip end of an RF introduction rod between the RF introduction rod and the electrostatic chuck unit in order to make uniform generation of an elect...
07/01/2008
7393417Semiconductor-manufacturing apparatus
On a wafer holding area 50 on the upper surface of a susceptor 22, a wafer W is supported by a wafer support 54 such that a gap with a predetermined distance is formed between the wafer W and a wafer heating surface 52. A projection 58...
07/01/2008
7393418Susceptor
A susceptor at least a surface thereof being coated with SiC, includes a recess where an wafer is mounted, the recess having an round portion disposed on a lower portion of an outer circumferential portion of the recess, a ring-shaped SiC crystal growth surface port...
07/01/2008
7381293Convex insert ring for etch chamber
A new and improved insert ring for a wafer support inside a processing chamber for the processing, particularly dry etching, of semiconductor wafer substrates. The insert ring includes a generally convex inner surface which faces the wafer support and defines a gap ...
06/03/2008
7381276Susceptor pocket with beveled projection sidewall
An apparatus for holding a semiconductor substrate comprises a plate having a pocket which holds the substrate, wherein the pocket comprises a lower surface and an inner edge. The inner edge comprises a plurality of members extending radially inward to reduce the ar...
06/03/2008
7369393Electrostatic chucks having barrier layer
An electrostatic chuck for supporting a semiconductor wafer, including: a chuck body having a dielectric region and an insulating region, the insulating region having a higher electrical resistivity than the dielectric region, an electrode embedded in the chuck body...
05/06/2008
7361230Substrate processing apparatus
In the substrate processing apparatus, a ceramic module for mounting a substrate has a flat plate portion having an electric circuitry and a ceramic base body, and as at least a part of a surface of the flat plate portion other than the surface mounting the substrat...
04/22/2008
7347901Thermally zoned substrate holder assembly
A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature...
03/25/2008
7338578Step edge insert ring for etch chamber
An insert ring for a wafer support inside a processing chamber for the processing, particularly dry etching, of semiconductor wafer substrates. The insert ring has a generally step-shaped cross-sectional configuration which defines a perpendicular gap or flow space ...
03/04/2008
1                      
 
Sign InRegister
Username  
Password   
forgot password?