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| Number | Title | Issue Date |
| 8083892 | Apparatus for generating gas plasma, gas composition for generating plasma and method for manufacturing semiconductor device using the same A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary ... | 12/27/2011 |
| 7430984 | Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements A plasma reactor for processing a workpiece, the plasma reactor comprising an enclosure, a workpiece support within the enclosure facing an overlying portion of the enclosure, the workpiece support and the overlying portion of the enclosure defining a process region... | 10/07/2008 |
| 7419567 | Plasma processing apparatus and method A plasma processing apparatus includes a worktable in a process chamber to horizontally place a target substrate thereon. A plasma generation space is defined above and around the worktable within the process chamber. The plasma generation space includes a periphera... | 09/02/2008 |
| 7392760 | Microwave-excited plasma processing apparatus A microwave-excited plasma processing apparatus shows a wide pressure range and a wide applicable electric power range for normal electric discharges as a result of using slits cut through a rectangular waveguide and having a profile that allows the electric field a... | 07/01/2008 |
| 7371332 | Uniform etch system Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, wher... | 05/13/2008 |
| 7325511 | Microwave plasma processing apparatus, microwave processing method and microwave feeding apparatus A microwave plasma processing apparatus includes a processing vessel, a microwave generator, a waveguide guiding a microwave formed by the microwave generator, and a microwave emitting member emitting the microwave with wavelength compression by a retardation plate,... | 02/05/2008 |
| 7320331 | In-situ plasma cleaning device for cylindrical surfaces An in-situ plasma cleaning device (PCD) performs an atomic surface cleaning process to remove contaminants and/or to modify the cylindrical surfaces of both the target and substrate. The atomic cleaning process utilizes a plasma generated locally within the in-situ ... | 01/22/2008 |
| 7316199 | Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber A magnetic field generator for producing a magnetic field that accelerates plasma formation is placed proximate a reaction chamber of semiconductor substrate processing system. The magnetic field generator has four main magnetic coil sections for producing a magneti... | 01/08/2008 |
| 7282454 | Switched uniformity control A component delivery mechanism for distributing a component inside a process chamber is disclosed. The component is used to process a work piece within the process chamber. The component delivery mechanism includes a plurality of component outputs for outputting the... | 10/16/2007 |
| 7282702 | Ion neutralizer An ion neutralizer enhances a heat transfer rate between a reflecting plate and a frame while preventing the reflecting plate from being bent due to thermal deformation. The ion neutralizer includes a frame and a plurality of reflecting plates integrally formed with... | 10/16/2007 |
| 7268076 | Apparatus and method for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece Physical vapor deposition and re-sputtering of a barrier layer in an integrated circuit is performed by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced int... | 09/11/2007 |
| 7244474 | Chemical vapor deposition plasma process using an ion shower grid A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction r... | 07/17/2007 |
| 7244344 | Physical vapor deposition plasma reactor with VHF source power applied through the workpiece A physical vapor deposition plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, a process gas inlet coupled to the chamber and a process gas sour... | 07/17/2007 |
| 7234413 | Plasma processing apparatus In a plasma processing apparatus, microwaves being transmitted in a waveguide pass through a microwave transmitted window via first and second slot antennas provided in a magnetic field side, so as to form surface waves. Process gas in a chamber is excited by the su... | 06/26/2007 |
| 7232985 | Controlled fusion in a field reversed configuration and direct energy conversion A system and apparatus for controlled fusion in a field reversed configuration (FRC) magnetic topology and conversion of fusion product energies directly to electric power. Preferably, plasma ions are magnetically confined in the FRC while plasma electrons are elect... | 06/19/2007 |
| 7226524 | Plasma processing apparatus A plasma processing apparatus includes an evacuatable processing vessel; a workpiece mount base for mounting thereon an object to be processed; a microwave transmitting plate provided in an opening of a ceiling of the processing vessel; a planar antenna member for s... | 06/05/2007 |
| 7223676 | Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer A low temperature process for depositing a coating containing any of silicon, nitrogen, hydrogen or oxygen on a workpiece includes placing the workpiece in a reactor chamber facing a processing region of the chamber, introducing a process gas containing any of silic... | 05/29/2007 |
| 7217337 | Plasma process chamber and system The present invention relates to a plasma process chamber, which includes: an upper housing having a gas inlet connected to a gas source, and a gas shower head placed in the upper housing; and a lower housing having a gas outlet connected to a vacuum pump, and a sub... | 05/15/2007 |
| 7214619 | Method for forming a barrier layer in an integrated circuit in a plasma with source and bias power frequencies applied through the workpiece A barrier layer is formed in an integrated circuit by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced into the vacuum chamber. A target-sputtering plasma i... | 05/08/2007 |
| 7210424 | High-density plasma processing apparatus A high-density plasma processing apparatus includes a processing chamber, having a susceptor for supporting an object to be processed positioned therein and a dielectric window positioned on the processing chamber to form an upper surface of the processing chamber. ... | 05/01/2007 |
| 7183716 | Charged particle source and operation thereof A charged particle source utilizes a novel plasma processing chamber, RF coil and ion optics, to achieve high uniformity. The plasma processing chamber has a re-entrant vessel which is movable, and which includes extensions of adjustable shape or position, to make m... | 02/27/2007 |
| 7171919 | Diamond film depositing apparatus using microwaves and plasma Disclosed herewith is a diamond film depositing apparatus using microwaves and plasma. The apparatus comprises a rectangular wave guide (125), a mode transition coupler (120), an antenna rod (130), a quartz bell jar (140), a workpiece hol... | 02/06/2007 |
| 7169231 | Gas distribution system with tuning gas An apparatus for providing different gases to different zones of a processing chamber is provided. A gas supply for providing an etching gas flow is provided. A flow splitter in fluid connection with the gas supply for splitting the etching gas flow from the gas sup... | 01/30/2007 |
| 7165506 | Method and device for plasma-treating the surface of substrates by ion bombardment In an ion etching method for reducing a substrate thickness, an electric arc is generated in a vacuum chamber such that the electric arc is locally separated from the substrate and circulates about the substrate. A plasma of a supplied etching gas is produced by the... | 01/23/2007 |
| 7083701 | Device and method for plasma processing, and slow-wave plate In a microwave plasma processing apparatus that uses a radial line slot antenna, a slot plate (16) is formed by a material having a thermal expansion rate close to the wave retardation plate (18), or depositing a metal on a dielectric plate constitutin... | 08/01/2006 |
| 7067034 | Method and apparatus for plasma forming inner magnetic bucket to control a volume of a plasma A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber includes a chamber within which a plasma is both ignited and sustained for processing. The chamber is defined at least in part by a wall and... | 06/27/2006 |
| 7019394 | Circuit package and method of plating the same A circuit package includes a base portion and a first metal pattern disposed on a substrate surface. Second and third metal patterns are disposed on another substrate surface, and electrically coupled to first and second vias. The third metal pattern forms a gap to ... | 03/28/2006 |
| 7015646 | Magnetic and electrostatic confinement of plasma with tuning of electrostatic field A system and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrostatica... | 03/21/2006 |
| 7002148 | Controlled fusion in a field reversed configuration and direct energy conversion A system and apparatus for controlled fusion in a field reversed configuration (FRC) magnetic topology and conversion of fusion product energies directly to electric power. Preferably, plasma ions are magnetically confined in the FRC while plasma electrons are elect... | 02/21/2006 |
| 6972524 | Plasma processing system control A method of approximating an ion energy distribution function (IEDF) at a substrate surface of a substrate, the substrate being processed in a plasma processing chamber. There is included providing a first voltage value, the first voltage value representing a value ... | 12/06/2005 |
| 6926799 | Etching apparatus using neutral beam A damage-free apparatus for etching the large area by using a neutral beam which can perform an etching process without causing electrical and physical damages by the use of the neutral beam is provided. The damage-free etching apparatus includes: an ion source for ... | 08/09/2005 |
| 6899817 | Device and method for etching a substrate using an inductively coupled plasma A method and a suitable device for carrying out this method is proposed, for etching a substrate (10), especially a silicon element, with the aid of an inductively coupled plasma (14). For this purpose, a high frequency electromagnetic alternating fiel... | 05/31/2005 |
| 6863835 | Magnetic barrier for plasma in chamber exhaust A plasma chamber apparatus and method employing a magnet system to block the plasma within the chamber interior from reaching the exhaust pump. An exhaust channel between the chamber interior and the pump includes a magnet and at least one deflector that creates tur... | 03/08/2005 |
| 6805770 | Technique for improving uniformity of magnetic fields that rotate or oscillate about an axis Techniques used in systems that employ pairs of coils arranged around an axis to make a magnetic field that rotates around an axis to reduce or eliminate the effects of corners where adjacent ones of the coils meet on the uniformity of the magnetic field. The techni... | 10/19/2004 |
| 6773544 | Magnetic barrier for plasma in chamber exhaust The invention concerns a plasma reactor employing a chamber enclosure including a process gas inlet and defining a plasma processing region. A workpiece support pedestal capable of supporting a workpiece at processing location faces the plasma processing region, the... | 08/10/2004 |
| 6764575 | Magnetron plasma processing apparatus When a substrate 30 is to be subjected to a magnetron plasma process, a dipole ring magnet 21 is provided, in which a large number of anisotropic segment magnets 22 are arranged in a ring-like shape around the outer wall of a chamber 1. A... | 07/20/2004 |
| 6736931 | Inductively coupled RF plasma reactor and plasma chamber enclosure structure therefor A plasma chamber enclosure structure for use in an RF plasma reactor. The plasma chamber enclosure structure being a single-wall dielectric enclosure structure of an inverted cup-shape configuration and having ceiling with an interior surface of substantially flat c... | 05/18/2004 |
| 6733617 | Direct detection of dielectric etch system magnet driver and coil malfunctions The direct detection of dielectric etch system magnet driver and coil malfunctions is disclosed. A dielectric etch system includes a plasma chamber in which a semiconductor wafer is placed to remove dielectric therefrom, and a number of coils positioned around the c... | 05/11/2004 |
| 6709546 | Device and method for etching a substrate by using an inductively coupled plasma A device and a method for etching a substrate, in particular a silicon body, by using an inductively coupled plasma. A high-frequency electromagnetic alternating field is generated using an ICP source, and an inductively coupled plasma composed of reactive particles... | 03/23/2004 |
| 6682630 | Uniform gas distribution in large area plasma source An apparatus configured to generate a time-varying magnetic field through a field admission window of a plasma processing chamber to create or sustain a plasma within the chamber by inductive coupling. The apparatus includes a magnetic core presenting a p... | 01/27/2004 |
