Celebrity Inventors
Mark Twain (Samuel L. Clemens) received Patent No. 121,992 for "An Improvement in Adjustable and Detachable Straps for Garments." He later received two more patents: one for a self-pasting scrapbook and one for a game to help players remember important historical dates.
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| Number | Title | Issue Date |
| 8133349 | Rapid and uniform gas switching for a plasma etch process An inductively coupled plasma processing apparatus includes a processing chamber in which a semiconductor substrate is processed, a substrate support, a dielectric window forming a wall of the chamber, an antenna operable to generate and maintain a plasma in the pro... | 03/13/2012 |
| 8123903 | Plasma reactor having multiple antenna structure A plasma reactor includes a chamber in which a wafer is treated by a plasma reaction, the chamber being provided at an upper portion with a cylindrical dielectric window, a multiple antenna structure disposed on upper and lower portions of the dielectric window to g... | 02/28/2012 |
| 8114246 | Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same A vacuum plasma processor includes a roof structure including a dielectric window carrying (1) a semiconductor plate having a high electric conductivity so it functions as an electrode, (2) a hollow coil and (3) at least one electric shield. The shield, coil and sem... | 02/14/2012 |
| 8075734 | Remote inductively coupled plasma source for CVD chamber cleaning The present invention generally includes a remote plasma source and a method of generating a plasma in a remote plasma source. Cleaning gas may be ignited into a plasma in a remote location and then provided to the processing chamber. By flowing the cleaning gas out... | 12/13/2011 |
| 8062473 | Plasma processing apparatus and method A plasma processing apparatus includes in a processing chamber, a sample stage, a bell jar, a coil antenna, a Faraday shield, and a gas ring member located below a skirt portion of the bell jar and above the sample stage. The gas ring member supplies a process gas t... | 11/22/2011 |
| 8062472 | Method of correcting baseline skew by a novel motorized source coil assembly The present invention generally provides apparatus and method for adjusting plasma density distribution in an inductively coupled plasma chamber. One embodiment of the present invention provides an apparatus configured for processing a substrate. The apparatus compr... | 11/22/2011 |
| 8043471 | Plasma processing apparatus A plasma processing apparatus includes a processing chamber; a plasma generating unit for generating a plasma of a gas supplied into the processing chamber; a substrate mounting table, disposed in the processing chamber, for mounting a semiconductor substrate having... | 10/25/2011 |
| 8021515 | Inductively coupled plasma processing apparatus An inductively coupled plasma processing apparatus (100) comprises a plasma chamber (12) with a dielectric window (400) forming a self-supporting wall element of the plasma chamber (12). The dielectric window (400) has an external ... | 09/20/2011 |
| 7976674 | Embedded multi-inductive large area plasma source Plasma generating devices, systems and processes are provided in which hybrid capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) sources use a plurality of primary plasma generating cells embedded into large area electrode or elsewhere in communi... | 07/12/2011 |
| 7972471 | Inductively coupled dual zone processing chamber with single planar antenna A dual zone plasma processing chamber is provided. The plasma processing chamber includes a first substrate support having a first support surface adapted to support a first substrate within the processing chamber and a second substrate support having a second suppo... | 07/05/2011 |
| 7967945 | RF antenna assembly for treatment of inner surfaces of tubes with inductively coupled plasma An antenna assembly for forming a barrier coating on the inner surface of a tube by means of a sealed annular chemical-plasma-reaction chamber defined by the inner wall of the tube, two spaced elements slidingly and sealingly moveable inside the tube, and a quartz t... | 06/28/2011 |
| 7905982 | Antenna for plasma processor apparatus An antenna includes excitation terminals responsive to an RF source to supply an RF electromagnetic field to a plasma that processes a workpiece in a vacuum chamber. The coil includes a transformer having a primary winding coupled to the excitation terminals and a m... | 03/15/2011 |
| 7883601 | Apparatus and method for controlling relative particle speeds in a plasma An apparatus for controlling a plasma etching process includes plasma control structure that can vary a size of a plasma flow passage, vary a speed of plasma flowing through the plasma flow passage, vary plasma concentration flowing through the plasma flow passage, ... | 02/08/2011 |
| 7879187 | Plasma etching apparatus The present invention relates to a plasma etching apparatus, which comprises a chamber, a substrate support disposed inside the chamber to support a substrate, a shield disposed with a gap on the substrate such that plasma is not generated therein while allowing an ... | 02/01/2011 |
| 7871490 | Inductively coupled plasma generation system with a parallel antenna array having evenly distributed power input and ground nodes and improved field distribution An antenna adapted to apply uniform electromagnetic fields to a volume of gas and including radiating elements connected in parallel with evenly distributed input terminals for receiving electromagnetic energy into the antenna and output terminals for grounding. In ... | 01/18/2011 |
| 7842159 | Inductively coupled plasma processing apparatus for very large area using dual frequency A plasma processing apparatus for a very large area using a dual frequency is provided. The apparatus includes: a stage loading a substrate to be subjected to an etching or deposition process; a reaction chamber detachably coupled with the stage and having a plasma ... | 11/30/2010 |
| 7837826 | Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the... | 11/23/2010 |
| 7811411 | Thermal management of inductively coupled plasma reactors An RF coil assembly provides a source to generate a plasma inductively in a process chamber. The RF coil assembly includes an RF coil disposed about a perimeter of the processing chamber and a frame disposed about a perimeter of the processing chamber. The frame is ... | 10/12/2010 |
| 7789993 | Internal balanced coil for inductively coupled high density plasma processing chamber A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a s... | 09/07/2010 |
| 7771562 | Etch system with integrated inductive coupling An integrated capacitively-coupled and inductively-coupled device is provided for plasma etching that may be used as a primary or secondary source for generating a plasma to etch substrates. The device is practical for processing advanced semiconductor devices and i... | 08/10/2010 |
| 7744721 | Plasma processing apparatus A plasma processing apparatus including a processing chamber for subjecting an object to plasma processing, a gas inlet, an evacuation device, a sample stage for the object, a power supply, and at least one induction coil. The at least one induction coil enables gen... | 06/29/2010 |
| 7740738 | Inductively coupled antenna and plasma processing apparatus using the same An inductively coupled antenna for installation on a reaction chamber of an inductively coupled plasma (ICP) processing apparatus and for connection to a radio frequency (RF) power source to induce an electric field for ionizing a reactant gas injected into the reac... | 06/22/2010 |
| 7670455 | Magnetically enhanced, inductively coupled plasma source for a focused ion beam system The present invention provides an inductively coupled, magnetically enhanced ion beam source, suitable to be used in conjunction with probe-forming optics to produce an ion beam without kinetic energy oscillations induced by the source. ... | 03/02/2010 |
| 7651587 | Two-piece dome with separate RF coils for inductively coupled plasma reactors A substrate processing system has a housing that defines a process chamber, a gas-delivery system, a high-density plasma generating system, a substrate holder, and a controller. The housing includes a sidewall and a dome positioned above the sidewall. The dome has p... | 01/26/2010 |
| 7648611 | Plasma etching equipment A plasma etching system for etching, in particular anisotropic etching, of a substrate by using a plasma. The plasma etching system has a first plasma-generating device which is inductively coupled in particular and has a first arrangement for generating a first hig... | 01/19/2010 |
| 7604709 | Plasma processing apparatus A plasma processing apparatus which stably and continuously generates a uniform plasma to process large-diameter wafers using a wide range of seed gases under wide-ranging pressure and density conditions and can be thus used for a wide range of applications, ensurin... | 10/20/2009 |
| 7513971 | Flat style coil for improved precision etch uniformity An RF coil for a plasma etch chamber is provided in which the RF coil is substantially flat over a portion of at least one turn of the coil. In one embodiment, each turn of the coil is substantially flat over a majority of each turn. In one embodiment of the present... | 04/07/2009 |
| 7481904 | Plasma device An etching apparatus has an antenna connected to a radio frequency power supply through a matching box. At the center region of a dielectric plate, a columnar conductor and a cylindrical conduct ring are arranged. Between the columnar conductor and the conductor rin... | 01/27/2009 |
| 7442272 | Apparatus for manufacturing semiconductor device An apparatus for improving the density and uniformity of plasma in the manufacture of a semiconductor device features a plasma chamber having a complex geometry that causes plasma density to be increased at the periphery or edge of a semiconductor wafer being proces... | 10/28/2008 |
| 7442273 | Apparatus using hybrid coupled plasma A hybrid coupled plasma type apparatus includes: a chamber having a gas-injecting unit; an electrostatic chuck in the chamber; an insulating plate over the gas-injecting unit; a high frequency generator; an impedance matching circuit connected to the high frequency ... | 10/28/2008 |
| 7435687 | Plasma processing method and plasma processing device The invention provides a plasma processing method and plasma processing device for manufacturing semiconductor devices in which the number of foreign particles being adhered to the wafer is reduced greatly and the yield is improved. In a plasma processing device hav... | 10/14/2008 |
| 7430984 | Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements A plasma reactor for processing a workpiece, the plasma reactor comprising an enclosure, a workpiece support within the enclosure facing an overlying portion of the enclosure, the workpiece support and the overlying portion of the enclosure defining a process region... | 10/07/2008 |
| 7431797 | Plasma reactor with a dynamically adjustable plasma source power applicator A plasma reactor for processing a workpiece includes a process chamber having an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to the ceiling, a workpiece support pedestal inside the chamber and generally facing the cei... | 10/07/2008 |
| 7426900 | Integrated electrostatic inductive coupling for plasma processing An integrated electrostatic inductively-coupled (i-ESIC) device is provided for plasma processing that may be used as a primary or secondary source for generating a plasma to prepare substrates for, and to process substrates by applying, dielectric and conductive co... | 09/23/2008 |
| 7419566 | Plasma reactor The plasma reactor comprises at least one cooling device (15, 16) consisting of two cooling elements (15a, 15b; 16a, 16b) adapted to be separately switched on and off. The heat produced during the plasma... | 09/02/2008 |
| 7413627 | Deposition chamber and method for depositing low dielectric constant films An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is deliver... | 08/19/2008 |
| 7406925 | Plasma processing method and apparatus A plasma processing apparatus including a vacuum chamber, a gas supply unit for supplying gas into the vacuum chamber, an exhausting unit for exhausting the interior of the vacuum chamber, a pressure-regulating valve for controllin... | 08/05/2008 |
| 7404879 | Ionized physical vapor deposition apparatus using helical self-resonant coil Provided is an ionized physical vapor deposition (IPVD) apparatus having a helical self-resonant coil. The IPVD apparatus comprises a process chamber having a substrate holder that supports a substrate to be processed, a deposition material source that supplies a ma... | 07/29/2008 |
| 7393788 | Method and system for selectively etching a dielectric material relative to silicon A method and system for selectively and uniformly etching a dielectric layer with respect to silicon and polysilicon in a dry plasma etching system are described. The etch chemistry comprises the use of fluorohydrocarbons, such as CH2F2 and CHF... | 07/01/2008 |
| 7381292 | Inductively coupled plasma generating apparatus incorporating serpentine coil antenna An inductively coupled plasma (ICP) generating apparatus includes an evacuated reaction chamber, an antenna installed at an upper portion of the reaction chamber to induce an electric field for ionizing reaction gas supplied into the reaction chamber and generating ... | 06/03/2008 |
