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A method of swing on a swing is disclosed, in which a user positioned on a standard swing suspended by two chains from a substantially horizontal tree branch induces side to side motion by pulling alternately on one chain and then the other.
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| Number | Title | Issue Date |
| 8083891 | Plasma processing apparatus and the upper electrode unit In a plasma processing apparatus that executes plasma processing on a semiconductor wafer placed inside a processing chamber by generating plasma with a processing gas supplied through a gas supply hole at an upper electrode (shower head) disposed inside the process... | 12/27/2011 |
| 8080126 | Plasma processing apparatus In the plasma processing apparatus of the present invention, a first electrode for connecting a high frequency electric power source in a chamber is arranged to be opposed to a second electrode. A substrate (W) to be processed is placed between the electrodes. There... | 12/20/2011 |
| 8048260 | Magnetic neutral line discharge plasma processing system The present invention provides a magnetic neutral line discharge plasma processing system that can apply a plurality of linear magnetic neutral line discharge plasmas simultaneously so as to uniformly process all the surface area of a large rectangular substrate for... | 11/01/2011 |
| 8034213 | Plasma processing apparatus and plasma processing method A plasma processing apparatus includes a processing vessel capable of being vacuum evacuated; a first electrode disposed in the processing vessel in a state electrically floating via an insulating member or a space; a second electrode, arranged in the processing ves... | 10/11/2011 |
| 8012306 | Plasma processing reactor with multiple capacitive and inductive power sources Broadly speaking, the embodiments of the present invention provide an improved chamber cleaning mechanism, apparatus and method. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing cha... | 09/06/2011 |
| 7993489 | Capacitive coupling plasma processing apparatus and method for using the same A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes a... | 08/09/2011 |
| 7988816 | Plasma processing apparatus and method A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring dispo... | 08/02/2011 |
| 7976673 | RF pulsing of a narrow gap capacitively coupled reactor An apparatus for providing a plasma etch of a layer over a wafer is provided. A capacitively coupled process chamber is provided. A gas source is provided. A first and a second electrode are provided within the process chamber. A first radio frequency power source i... | 07/12/2011 |
| 7972470 | Asymmetric grounding of rectangular susceptor An asymmetrically grounded susceptor used in a plasma processing chamber for chemical vapor deposition onto large rectangular panels supported on and grounded by the susceptor. A plurality of grounding straps are connected between the periphery of the susceptor to t... | 07/05/2011 |
| 7943007 | Configurable bevel etcher A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an up... | 05/17/2011 |
| 7837825 | Confined plasma with adjustable electrode area ratio A plasma reactor comprises a chamber, a bottom electrode, a top electrode, a first set of confinement rings, a second set of confinement rings, and a ground extension. The top and bottom electrodes, the first and second sets of confinement rings, and the ground exte... | 11/23/2010 |
| 7815767 | Plasma processing apparatus A plasma processing apparatus of the present invention can reduce a manufacturing cost of the apparatus and a footprint by decreasing a load applied to a device for varying a distance between electrodes in comparison with a conventional apparatus and, at the same ti... | 10/19/2010 |
| 7767056 | High-frequency plasma processing apparatus This application discloses a High-Frequency plasma processing apparatus comprising a process chamber in which a substrate to be processed is placed, a process-gas introduction line for introducing a process gas into the process chamber, a first HF electrode provided... | 08/03/2010 |
| 7767055 | Capacitive coupling plasma processing apparatus A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are di... | 08/03/2010 |
| 7749353 | High aspect ratio etch using modulation of RF powers of various frequencies A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first ... | 07/06/2010 |
| 7722738 | Semiconductor device manufacturing unit and semiconductor device manufacturing method A semiconductor device manufacturing unit is provided, wherein a cathode and an anode can be placed in a simple structure; wherein excellent film deposition and film thickness distribution can be gained; and wherein no cooling devices are required to be provided. | 05/25/2010 |
| 7682483 | Vacuum processing chamber and method of processing a semiconductor work piece A vacuum processing chamber and method of using a vacuum processing chamber are described and which includes a chamber defined by a chamber body, and wherein the chamber body defines an internal cavity; first and second electrodes are mounted in the internal cavity ... | 03/23/2010 |
| 7678225 | Focus ring for semiconductor treatment and plasma treatment device A focus ring for a plasma processing apparatus has an inner region, middle region, and outer region, disposed in this order from the inner side to surround a target substrate. On the side to be exposed to plasma, the surfaces of the inner region and outer region con... | 03/16/2010 |
| 7651586 | Particle removal apparatus and method and plasma processing apparatus A particle removal apparatus for removing particles from a chamber of a plasma processing apparatus, wherein the chamber is connected to a gas exhaust port and a plasma of a processing gas is generated in the chamber to plasma process a substrate to be processed, in... | 01/26/2010 |
| 7615132 | Plasma processing apparatus having high frequency power source with sag compensation function and plasma processing method A plasma processing apparatus suitable for high-speed and high-definition etching is provided. By applying to a wafer chucking electrode 9 a voltage waveform in which an absolute value of high frequency voltage increases with time and switching between a posi... | 11/10/2009 |
| 7582185 | Plasma-processing apparatus A plasma-processing apparatus having a high frequency power application electrode in which plasma is generated by supplying VHF power to the high frequency power application electrode. The plasma-processing apparatus has an impedance-matching equipment comprising a ... | 09/01/2009 |
| 7537672 | Apparatus for plasma processing In the plasma processing apparatus of the present invention, a first electrode (21) for connecting a high frequency electric power source (40) in a chamber is arranged to be opposed to a second electrode (5). A substrate (W) to be processed is p... | 05/26/2009 |
| 7494561 | Plasma processing apparatus and method, and electrode plate for plasma processing apparatus A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. A first upper electrode is disposed to have a ring shape and to face a target substrate placed within the process container. A second upper electrode is dispos... | 02/24/2009 |
| 7442273 | Apparatus using hybrid coupled plasma A hybrid coupled plasma type apparatus includes: a chamber having a gas-injecting unit; an electrostatic chuck in the chamber; an insulating plate over the gas-injecting unit; a high frequency generator; an impedance matching circuit connected to the high frequency ... | 10/28/2008 |
| 7438765 | Adjustable shielding plate for adjusting an etching area of a semiconductor wafer and related apparatus and methods An apparatus for adjusting an etching area of a semiconductor wafer includes an adjustable shielding plate. The adjustable shielding plate includes a plurality of shielding members. Each of the plurality of shielding members are movable between a first position conf... | 10/21/2008 |
| 7435926 | Methods and array for creating a mathematical model of a plasma processing system A method of creating a simplified equivalent circuit model of a plasma processing system, including an electrical measuring device, a lower electrode, an upper electrode, and a signal generator device is described. The method includes creating a simplified equivalen... | 10/14/2008 |
| 7430986 | Plasma confinement ring assemblies having reduced polymer deposition characteristics Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes ... | 10/07/2008 |
| 7432467 | Plasma processing apparatus A plasma processing apparatus performs a desired plasma processing on a target substrate by using a plasma generated from a processing gas by forming a high frequency electric field in an evacuable processing chamber having an electrode. The plasma processing appara... | 10/07/2008 |
| 7426900 | Integrated electrostatic inductive coupling for plasma processing An integrated electrostatic inductively-coupled (i-ESIC) device is provided for plasma processing that may be used as a primary or secondary source for generating a plasma to prepare substrates for, and to process substrates by applying, dielectric and conductive co... | 09/23/2008 |
| 7422656 | Dry etching method and apparatus for use in the LCD device A dry etching step during the manufacturing of a substrate for a liquid crystal display (LCD) device is improved by placing the substrate at a predetermined distance away from the lower electrode to prevent damage of the substrate due to electrostatic formed therebe... | 09/09/2008 |
| 7418921 | Plasma CVD apparatus for forming uniform film A plasma CVD film formation apparatus includes: a reaction chamber; a shower plate installed inside the reaction chamber; and a susceptor for placing a wafer thereon installed substantially parallel to and facing the shower plate. The shower plate has a surface faci... | 09/02/2008 |
| 7416677 | Exhaust assembly for plasma processing system and method An exhaust assembly is described for use in a plasma processing system, whereby secondary plasma is formed in the exhaust assembly between the processing space and chamber exhaust ports in order to reduce plasma leakage to a vacuum pumping system, or improve the uni... | 08/26/2008 |
| 7415940 | Plasma processor This invention includes a first filter (27) connected between a susceptor (21) and ground and having a variable impedance, a sensor (28) for detecting an electrical signal based on the state of a plasma (P) generated in a process chamber (11 | 08/26/2008 |
| 7389741 | Apparatus of fabricating a display device A display device fabricating apparatus includes a radio frequency generator and a vacuum chamber. A first electrode and a second electrode that receive power from the radio frequency generator form a plasma using a gas inside the vacuum chamber. A power supply line ... | 06/24/2008 |
| 7387081 | Plasma reactor including helical electrodes A device for forming an ion sheath in a plasma to deposit coatings on a non-conducting substrate. The device comprises a tubular reaction chamber having an outer surface wound helically with a first electrode having a first width. Helical winding of the first electr... | 06/17/2008 |
| 7373899 | Plasma processing apparatus using active matching A plasma processing apparatus having a processing chamber connected to a vacuum exhauster so that its inside pressure can be reduced by the vacuum exhauster, a gas feed unit for supplying gas into the processing chamber, a substrate electrode provided in the process... | 05/20/2008 |
| 7371285 | Motorized chamber lid A semiconductor processing chamber having a motorized lid is provided. In one embodiment, the semiconductor processing chamber generally includes a chamber body having sidewalls and a bottom defining an interior volume. A lid assembly is coupled to the chamber body ... | 05/13/2008 |
| 7364623 | Confinement ring drive A confinement assembly for a semiconductor processing chamber is provided. The confinement assembly includes a plurality of confinement rings disposed over each other. Each of the plurality of confinement rings are separated by a space and each of the plurality of c... | 04/29/2008 |
| 7347980 | Process for treating fluorine compound-containing gas A gas stream containing at least one fluorine compound selected from the group consisting of compounds of carbon and fluorine, compounds of carbon, hydrogen and fluorine, compounds of sulfur and fluorine, compounds of nitrogen and fluorine and compounds of carbon, h... | 03/25/2008 |
| 7347915 | Plasma in-situ treatment of chemically amplified resist A method for creating semiconductor devices by etching a layer over a wafer is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. The wafer is placed in a process chamber. The photoresist is hardened by providing a hardening pl... | 03/25/2008 |
