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| Number | Title | Issue Date |
| 7758718 | Reduced electric field arrangement for managing plasma confinement A method for processing a substrate in a plasma processing chamber having a chamber wall is provided. The method includes providing an electrode arrangement having a cylindrical electrode encapsulated within a dielectric liner, which is coupled with the chamber wall... | 07/20/2010 |
| 7625460 | Multifrequency plasma reactor A multifrequency plasma reactor includes first, second and third power generators operably coupled to at least one of an upper and lower electrode for generating power signals. The plasma reactor further includes a controller for selectively activating the power gen... | 12/01/2009 |
| 7438765 | Adjustable shielding plate for adjusting an etching area of a semiconductor wafer and related apparatus and methods An apparatus for adjusting an etching area of a semiconductor wafer includes an adjustable shielding plate. The adjustable shielding plate includes a plurality of shielding members. Each of the plurality of shielding members are movable between a first position conf... | 10/21/2008 |
| 7337745 | Electrode, susceptor, plasma processing apparatus and method of making the electrode and the susceptor A susceptor 24 includes a heater 38 disposed in a planar state, upper and lower ceramic-metal composites 40A and 40B disposed so as to sandwich the heater 38 from above and from below, and a ceramic electrostatic chuck 28 fo... | 03/04/2008 |
| 7329608 | Method of processing a substrate The invention is embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded,... | 02/12/2008 |
| 7319295 | High-frequency power supply structure and plasma CVD device using the same A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency powe... | 01/15/2008 |
| 7296534 | Hybrid ball-lock attachment apparatus The present invention uses hybrid ball-lock devices as an alternate for threaded fasteners. Parts of the fastener exposed directly to the plasma act as a shield for the remaining pieces of the fastener or are used as a material to actually enhance plasma characteris... | 11/20/2007 |
| 7294283 | Penning discharge plasma source The preferred embodiments described herein provide a Penning discharge plasma source. The magnetic and electric field arrangement, similar to a Penning discharge, effectively traps the electron Hall current in a region between two surfaces. When a substrate (10 | 11/13/2007 |
| 7281491 | Dielectric-coated electrode, plasma discharge treatment apparatus and method for forming thin film A dielectric-coated electrode having a conductive base material coated with a dielectric on a surface thereof, the dielectric including a first metal atom and a second metal atom. As for an ionic strength of the first metal atom and an ionic strength of the second m... | 10/16/2007 |
| 7256134 | Selective etching of carbon-doped low-k dielectrics The present invention includes a process for selectively etching a low-k dielectric material formed on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a fluorine-rich fluorocarbon or hydrofluorocarbon gas, a nitrogen-c... | 08/14/2007 |
| 7201823 | High throughput plasma treatment system A method for the plasma treatment of parts. The method includes sending loading signals from an electronic control to a transfer mechanism and loading the parts from a position outside of the treatment chamber to a plurality of treatment positions within the treatme... | 04/10/2007 |
| 7059267 | Use of pulsed grounding source in a plasma reactor A method for grounding a semiconductor substrate pedestal during a portion of a high voltage power bias oscillation cycle to reduce or eliminate the detrimental effects of feature charging during the operation of a plasma reactor. ... | 06/13/2006 |
| RE39064 | Electronic device manufacturing apparatus and method for manufacturing electronic device An electronic device manufacturing apparatus includes: a reaction chamber including a wall having a ground potential level; a reaction gas inlet for introducing a reaction gas into the reaction chamber; a high frequency power generator for generating a high frequenc... | 04/18/2006 |
| 7025856 | Processing materials inside an atmospheric-pressure radiofrequency nonthermal plasma discharge Apparatus for the processing of materials involving placing a material either placed between an radio-frequency electrode and a ground electrode, or which is itself one of the electrodes. This is done in atmospheric pressure conditions. The apparatus effectively etc... | 04/11/2006 |
| 7025857 | Plasma treatment apparatus, matching box, impedance matching device, and coupler A matching box is provided with a contact device insertion section serving as a slot into which a contact device is inserted. When the matching box is fixed on the outer wall of the side surface of a vacuum container, the matching box is positioned so as to be in a ... | 04/11/2006 |
| 7004107 | Method and apparatus for monitoring and adjusting chamber impedance A substrate processing system that includes a deposition chamber having a reaction zone, a substrate holder that positions a substrate in the reaction zone, a gas distribution system that includes a gas inlet manifold for supplying one or more process gases to said ... | 02/28/2006 |
| 7004108 | Apparatus for fixing an electrode in plasma polymerizing apparatus An apparatus for fixing an eletrode of an electrode of plama polymerization apparatus is provided, which comprises; a nonconductive holder for fixing an electrode by covering an end part of the electrode, a leadline connecting the electrode with a power supply, and ... | 02/28/2006 |
| 6830007 | Apparatus and method for forming low dielectric constant film A CVD apparatus includes (i) a reaction chamber; (ii) a reaction gas inlet; (iii) a lower stage on which a semiconductor substrate is placed; (iv) an upper electrode for plasma excitation; (v) an intermediate electrode with plural pores through which the reaction ga... | 12/14/2004 |
| 6827870 | Method and apparatus for etching and deposition using micro-plasmas Plasma etching or deposition is performed over substrates using spatially localized micro-plasmas operating in parallel with each other. A plasma generating electrode is positioned closely adjacent to an exposed surface of the substrate, as on the surface of a diele... | 12/07/2004 |
| 6793767 | Wafer stage including electrostatic chuck and method for dechucking wafer using the wafer stage A wafer stage including an electrostatic chuck and a method for dechucking a wafer using the wafer stage are provided, wherein, the wafer stage includes an electrostatic chuck support, an electrostatic chuck, a lifting means, and a grounding means including a device... | 09/21/2004 |
| 6740842 | Radio frequency power source for generating an inductively coupled plasma A system for converting DC power (22) into an RF electromagnetic field in a processing chamber, the system being composed of: a coil (16) constructed to surround the processing chamber; and an RF power generator (20) including a free-running osc... | 05/25/2004 |
| 6585851 | Plasma etching device A plasma etching device which has an auxiliary electrode enabling realization of a uniform plasma density of generated plasma on the surface of a base and which enables uniform etching with respect to the base without depending upon pressure and without r... | 07/01/2003 |
| 6558507 | Plasma processing apparatus A plasma processing apparatus has a substrate holder, arranged in a vessel which can be reduced in pressure, for placing a substrate to be processed there on, a process gas fed into the reaction vessel, and a cathode electrode for supplying a high-frequen... | 05/06/2003 |
| 6554979 | Method and apparatus for bias deposition in a modulating electric field The present invention provides a method and apparatus for achieving conformal step coverage of one or more materials on a substrate using sputtered ionized material. In one embodiment, a chamber having one or more current return plates, a support member, ... | 04/29/2003 |
| 6485603 | Method and apparatus for conserving energy within a process chamber An apparatus for redirecting energy applied to a susceptor of a substrate process chamber. Specifically, a shield comprising one or more reflector members is disposed below said susceptor whereby thermal energy radiated from a backside of said susceptor i... | 11/26/2002 |
| 6468387 | Apparatus for generating a plasma from an electromagnetic field having a lissajous pattern An apparatus for forming an electromagnetic field in a processing chamber, including a first pair of electrodes for generating a first electromagnetic field within the processing chamber and a second pair of electrodes for generating a second electromagne... | 10/22/2002 |
| 6427622 | Hot wire chemical vapor deposition method and apparatus using graphite hot rods A hot wire chemical vapor deposition method and apparatus for fabricating high quality amorphous, micro-crystalline, and poly-crystalline thin film silicon, or related materials, devices and large area modules is described. A silane gas impinges upon a ho... | 08/06/2002 |
| 6375860 | Controlled potential plasma source The occurrence of internally-formed contaminants or negatively-charged particulates within a plasma is minimized by preventing such from becoming trapped in the plasma. The plasma is formed in a plasma chamber having control electrodes and reference elect... | 04/23/2002 |
| 6267075 | Apparatus for cleaning items using gas plasma A plasma cleaning apparatus for cleaning lead frames or other items comprised of a chamber adapted for containing a plasma, a magazine positioned in the chamber for holding the lead frames, a first active electrode positioned in the chamber on one side of... | 07/31/2001 |
| 6261428 | Magnetron plasma process apparatus A magnetron plasma process apparatus comprises a process chamber, an upper electrode and a lower electrode, both located within the process chamber and extending parallel to each other, a gas-supplying system for supplying a process gas into the space bet... | 07/17/2001 |
| 6250250 | Multiple-cell source of uniform plasma A multiple-cell plasma source consists of a pair of perforated plate-like cathodes and a perforated plate-like anode between the both cathode plates. Perforations in all three plates are coaxial and form a plurality of cells in which a Penning discharge p... | 06/26/2001 |
| 6190496 | Plasma etch reactor and method for emerging films A plasma etch reactor 20 includes a reactor chamber 22 with a grounded upper electrode 24, a lower electrode 28 which is attached to a high frequency power supply 30 and a low frequency power supply 32, and a peripheral electrode 26 which is located betwe... | 02/20/2001 |
| 6145469 | Plasma processing apparatus and processing method A plasma processing apparatus has a substrate holder, arranged in a reaction vessel which can be reduced in pressure, for placing a substrate to be processed thereon, means for feeding a process gas into the reaction vessel, and a cathode electrode for su... | 11/14/2000 |
| 6143124 | Apparatus and method for generating a plasma from an electromagnetic field having a lissajous pattern An apparatus for forming an electromagnetic field in a processing chamber, including a first pair of electrodes for generating a first electromagnetic field within the processing chamber and a second pair of electrodes for generating a second electromagne... | 11/07/2000 |
| 6048435 | Plasma etch reactor and method for emerging films A plasma etch reactor 20 includes a reactor chamber 22 with a grounded upper electrode 24, a lower electrode 28 which is attached to a high frequency power supply 30 and a low frequency power supply 32, and a peripheral electrode 26 which is located betwe... | 04/11/2000 |
| 5981899 | Capacitively coupled RF-plasma reactor A capacitively coupled Rf plasma reactor and method in which first and second extended electrode arrangements are mutually and substantially constantly spaced and substantially enclose a plasma reaction volume within a reactor chamber. The first of the el... | 11/09/1999 |
| 5795452 | Dry process system A dry process system comprising a chamber having an inlet for reaction gas and an exhaust port for exhaust gas, at least one pair of electrodes connected with an alternating current power source through a blocking capacitor, respectively, and one or more ... | 08/18/1998 |
| 5753066 | Plasma source for etching An apparatus for generating plasma is disclosed. The apparatus comprises: a plasma chamber; pairs of parallel plate electrodes; and a power supply for applying high-frequency powers on the pairs of electrodes. The frequencies of the high-frequency powers ... | 05/19/1998 |
| 5707486 | Plasma reactor using UHF/VHF and RF triode source, and process A plasma reactor preferably uses a split electrode which surrounds a plasma dome region of the reactor, is driven by high frequency energy selected from VHF and UHF and produces an electric field inside the electrode, parallel to the wafer support electro... | 01/13/1998 |
| 5436424 | Plasma generating method and apparatus for generating rotating electrons in the plasma A plasma generating apparatus includes a vacuum chamber having an insulated inner surface, more than two electrodes arranged on the insulated inner surface of the vacuum chamber, a high frequency applying device for applying high frequencies having differ... | 07/25/1995 |
