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| Number | Title | Issue Date |
| 8147647 | Method and arrangement for cleaning optical surfaces in plasma-based radiation sources The invention is directed to a method and an arrangement for cleaning optical surfaces of reflection optics which are arranged in a plasma-based radiation source or exposure device arranged downstream and contaminated by debris particles emitted by a hot plasma of t... | 04/03/2012 |
| 8147648 | Composite showerhead electrode assembly for a plasma processing apparatus A showerhead electrode for a plasma processing apparatus includes an interface gel between facing surfaces of an electrode plate and a backing plate. The interface gel maintains thermal conductivity during lateral displacements generated during temperature cycling d... | 04/03/2012 |
| 8142608 | Atmospheric pressure plasma reactor An atmospheric pressure plasma reactor includes a high-voltage electrode, a common grounded electrode, a bias electrode and at least one dielectric layer. The high-voltage electrode is connected to a high-voltage power supply. The common grounded electrode is used w... | 03/27/2012 |
| 8114245 | Plasma etching device A plasma etching device which has an auxiliary electrode enabling realization of a uniform plasma density of generated plasma on the surface of a base and which enables uniform etching with respect to the base without depending upon pressure and without rotating a m... | 02/14/2012 |
| 8092644 | Method and apparatus for cleaning and surface conditioning objects using plasma An apparatus and method for cleaning objects using plasma are disclosed. The apparatus provides a plurality of elongated dielectric barrier members arranged adjacent each other, a plurality of electrodes each contained within, and extending substantially along the l... | 01/10/2012 |
| 8092643 | Method and apparatus for cleaning and surface conditioning objects using plasma A method and apparatus for cleaning and surface conditioning objects using plasma are disclosed. One embodiment of the method discloses providing a plurality of elongated dielectric barrier members arranged adjacent each other, the elongated dielectric barrier membe... | 01/10/2012 |
| 8080125 | Gas-permeable plasma electrode, method for production of the gas-permeable plasma electrode, and a parallel-plate reactor A gas-permeable plasma electrode has an electrically conductive container with a base which has a hole, and a gas-permeable porous electrically conductive film, with the gas-permeable porous electrically conductive film being arranged opposite the base in the electr... | 12/20/2011 |
| 7988815 | Plasma reactor with reduced electrical skew using electrical bypass elements RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing bypass current flow paths. One bypass current flow path avoids the pumping port in the chamber floor, and comprises a conductive symmetrical grill extending... | 08/02/2011 |
| 7988814 | Plasma processing apparatus, plasma processing method, focus ring, and focus ring component When a substrate to be processed placed on a mounting table disposed in a process chamber is processed by plasma generated in the process chamber by application of high-frequency voltage, an electric field causing ions generated by the plasma to accelerate toward a ... | 08/02/2011 |
| 7951261 | Plasma etching apparatus The present invention relates to a plasma etching apparatus. In the apparatus, potential difference is applied between a substrate support with a substrate seated thereon and a electrode surrounding an edge region of the substrate, and a distance between the substra... | 05/31/2011 |
| 7927455 | Plasma processing apparatus A plasma processing apparatus including a sealable chamber that is sealable, a gas supply section that supplies a reactive material gas into the chamber, and a plurality of cathode and anode electrode pairs provided within the chamber, connected to an external power... | 04/19/2011 |
| 7922866 | Apparatus for aligning electrodes in a process chamber to protect an exclusion area within an edge environ of a wafer Positional relationships are established in a process chamber. A base is configured with a lower electrode surface to support a wafer, and an upper electrode has a lower surface. A drive mounted on the base has a linkage connected to the upper electrode. A fixture p... | 04/12/2011 |
| 7850819 | Plasma reactor with high productivity The invention relates to a plasma reactor with high productivity for surface coating or modification of objects and/or substrates by plasma processes in a processing chamber, preferably as vacuum processes at reduced pressure, having an entrance lock to the processi... | 12/14/2010 |
| 7824520 | Plasma treatment apparatus In the case of generating plasma under atmospheric pressure, the particle generated due to generation of high-density plasma is to be a cause of a defect such as a point defect or a line defect of a display portion in a display device. The present invention is offer... | 11/02/2010 |
| 7820007 | Silicon electrode plate for plasma etching with superior durability This silicon electrode plate for plasma etching is a silicon electrode plate for plasma etching with superior durability including silicon single crystal which, in terms of atomic ratio, contains 3 to 11 ppba of boron, and further contains a total of 0.5 to 6 ppba o... | 10/26/2010 |
| 7780813 | Electric field mediated chemical reactors A chemical reactor includes two or more substrates joined along planar surfaces thereof, a chemical reaction chamber located between the two or more substrates, and a pair of electrodes on one of the substrates and along a wall of the reaction chamber. Each substrat... | 08/24/2010 |
| 7740736 | Methods and apparatus for preventing plasma un-confinement events in a plasma processing chamber Techniques and apparatus for substantially reducing and/or preventing the occurrence of plasma un-confinement events, including one or more of shielding a gap disposed between chamber components and along a RF current path with a dielectric shielding structure, shie... | 06/22/2010 |
| 7727354 | Structure for preventing gap formation and plasma processing equipment having the same Plasma processing equipment having a structure for preventing gap formation includes: a chamber inside which a plasma environment is formed; an upper electrode positioned at a upper position of the chamber; an electrostatic chuck positioned at a lower position of th... | 06/01/2010 |
| 7713379 | Plasma confinement rings including RF absorbing material for reducing polymer deposition Plasma confinement rings are adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to substantially reduce polymer deposition on those surfaces. The plasma confinement rings include an RF lossy material effective to enhance heating ... | 05/11/2010 |
| 7674353 | Apparatus to confine plasma and to enhance flow conductance The embodiments of the present invention generally relate to a plasma reactor. In one embodiment, a plasma reactor includes a substrate support is disposed in a vacuum chamber body and coupled to bias power generator. An RF electrode is disposed above the substrate ... | 03/09/2010 |
| 7662253 | Apparatus for the removal of a metal oxide from a substrate and methods therefor An apparatus generating a plasma for removing metal oxide from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and t... | 02/16/2010 |
| 7662254 | Methods of and apparatus for aligning electrodes in a process chamber to protect an exclusion area within an edge environ of a wafer Positional relationships are established in a process chamber. A base is configured with a lower electrode surface to support a wafer, and an upper electrode has a lower surface. A drive mounted on the base has a linkage connected to the upper electrode. A fixture p... | 02/16/2010 |
| 7658816 | Focus ring and plasma processing apparatus A focus ring and a plasma processing apparatus capable of improving an in-surface uniformity of a surface and reducing occurrences of deposition on a backside surface of a peripheral portion of a semiconductor wafer compared to a conventional case are provided. Inst... | 02/09/2010 |
| 7651585 | Apparatus for the removal of an edge polymer from a substrate and methods therefor An apparatus generating a plasma for removing an edge polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode a... | 01/26/2010 |
| 7622017 | Processing apparatus and gas discharge suppressing member A processing apparatus for performing a process on a surface of an object to be processed by applying a high frequency power to an electrode installed in an airtight processing chamber to convert a processing gas introduced therein into a plasma, includes a thermal ... | 11/24/2009 |
| 7618516 | Method and apparatus to confine plasma and to enhance flow conductance The embodiments of the present invention generally relate to annular ring used in a plasma processing chamber. In one embodiment, the annular ring includes an inner wall, an upper outer wall, a lower outer wall, a step defined between the upper and lower outer wall,... | 11/17/2009 |
| 7615131 | Plasma etching chamber and plasma etching system using same Disclosed is a plasma etching chamber for completely dry-cleaning a film material and particles deposited at the periphery of a wafer through plasma etching while generating plasma at the top to the bottom sides of the periphery of the wafer. A pair of top and botto... | 11/10/2009 |
| 7582184 | Plasma processing member A plasma processing member includes a ceramic base, a plasma generating electrode embedded in the ceramic base, and an electrode power supply member connected to the plasma generating electrode. The impedance of the plasma processing member when plasma is generated ... | 09/01/2009 |
| 7566379 | Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system The present invention presents an improved upper electrode for a plasma processing system, wherein the design and fabrication of an electrode plate with a deposition shield coupled to the upper electrode advantageously provides gas injection of a process gas with su... | 07/28/2009 |
| 7520957 | Lid assembly for front end of line fabrication A lid assembly for semiconductor processing is provided. In at least one embodiment, the lid assembly includes a first electrode comprising an expanding section that has a gradually increasing inner diameter. The lid assembly also includes a second electrode dispose... | 04/21/2009 |
| 7485205 | Method, arrangement and electrode for generating an atmospheric pressure glow plasma (APG) Method of generating an atmospheric pressure glow discharge plasma (APG), wherein said plasma is generated in a discharge space formed between at least one first electrode surface and at least one second electrode surface. The method comprises at least the steps of ... | 02/03/2009 |
| 7481903 | Processing device and method of maintaining the device, mechanism and method for assembling processing device parts, and lock mechanism and method for locking the lock mechanism A processing device in which maintenance can be easily carried out and a burden on a worker can be reduced, and a method of maintaining the device are provided. An upper electrode unit 106 structuring a ceiling portion of a processing chamber 102 of an... | 01/27/2009 |
| 7442273 | Apparatus using hybrid coupled plasma A hybrid coupled plasma type apparatus includes: a chamber having a gas-injecting unit; an electrostatic chuck in the chamber; an insulating plate over the gas-injecting unit; a high frequency generator; an impedance matching circuit connected to the high frequency ... | 10/28/2008 |
| 7431796 | Method and apparatus for low energy electron enhanced etching of substrates in an AC or DC plasma environment An apparatus for low-damage, anisotropic etching of substrates having the substrate mounted upon a mechanical support located within an ac or dc plasma reactor. The mechanical support is independent of the plasma reactor generating apparatus and capable of being ele... | 10/07/2008 |
| 7430986 | Plasma confinement ring assemblies having reduced polymer deposition characteristics Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes ... | 10/07/2008 |
| 7426900 | Integrated electrostatic inductive coupling for plasma processing An integrated electrostatic inductively-coupled (i-ESIC) device is provided for plasma processing that may be used as a primary or secondary source for generating a plasma to prepare substrates for, and to process substrates by applying, dielectric and conductive co... | 09/23/2008 |
| 7415940 | Plasma processor This invention includes a first filter (27) connected between a susceptor (21) and ground and having a variable impedance, a sensor (28) for detecting an electrical signal based on the state of a plasma (P) generated in a process chamber (11 | 08/26/2008 |
| 7404874 | Method and apparatus for treating wafer edge region with toroidal plasma Method and apparatus for treating an edge region of a wafer. A toroidal shaped plasma cavity has an inner diameter which is slightly less than the diameter of the wafer being treated so that only the edge region of the wafer extends into the toroidal plasma cavity. ... | 07/29/2008 |
| 7387081 | Plasma reactor including helical electrodes A device for forming an ion sheath in a plasma to deposit coatings on a non-conducting substrate. The device comprises a tubular reaction chamber having an outer surface wound helically with a first electrode having a first width. Helical winding of the first electr... | 06/17/2008 |
| 7381291 | Dual-chamber plasma processing apparatus A dual-chamber plasma processing apparatus comprises two reaction spaces which are equipped with different gas inlet lines and different RF systems. Each reaction space is provided with an RF wave entry path and an RF wave return path to supply RF power from an RF p... | 06/03/2008 |
