"I hate what they've done to my child...I would never let my own children watch it. "
Vladimir Zworykin, television pioneer ; Talking about an invention in which he played a critical role.
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| Number | Title | Issue Date |
| 7922865 | Magnetic field generator for magnetron plasma, and plasma etching apparatus and method comprising the magnetic field generator In a magnetic field generator for magnetron plasma generation which comprises a dipole-ring magnet with a plurality of columnar anisotropic segment magnets arranged in a ring-like manner, or in an etching apparatus and a method both of which utilize the magnetic fie... | 04/12/2011 |
| 7434537 | Device for the coating of objects An apparatus for coating objects having a single microwave source, two or more coating chambers, and an impedance structure or a waveguide structure. The coating chambers are connected to the single microwave source. The impedance structure or waveguide structure di... | 10/14/2008 |
| 7430985 | Plasma processing equipment Plasma processing equipment capable of increasing the heat resistance of a wave guide by using a high dielectric material, comprising a processing container 44 formed to allow vacuuming, a loading table 46 installed in the processing container for plac... | 10/07/2008 |
| 7392760 | Microwave-excited plasma processing apparatus A microwave-excited plasma processing apparatus shows a wide pressure range and a wide applicable electric power range for normal electric discharges as a result of using slits cut through a rectangular waveguide and having a profile that allows the electric field a... | 07/01/2008 |
| 7358193 | Apparatus for forming nanoholes and method for forming nanoholes A vacuum chamber includes a plasma generating space in its interior. A magnetic field generating device applies a fluctuating magnetic field to the plasma generating space to cause plasma therein to fluctuate. A substrate is placed in the plasma generating space so ... | 04/15/2008 |
| 7338575 | Hydrocarbon dielectric heat transfer fluids for microwave plasma generators A process and apparatus for cooling a plasma tube generally includes flowing a hydrocarbon dielectric heat transfer fluid into a space defined by the plasma tube and a concentric tube surrounding the plasma tube. In one embodiment, the hydrocarbon fluid is selected ... | 03/04/2008 |
| 7323080 | Apparatus for treating substrate The present is directed to an apparatus for etching the top edge and bottom of a wafer. The apparatus includes a substrate support part for supporting a wafer and a movable protect part for preventing fluid for an etch from flowing into a non-etch portion of the waf... | 01/29/2008 |
| 7320331 | In-situ plasma cleaning device for cylindrical surfaces An in-situ plasma cleaning device (PCD) performs an atomic surface cleaning process to remove contaminants and/or to modify the cylindrical surfaces of both the target and substrate. The atomic cleaning process utilizes a plasma generated locally within the in-situ ... | 01/22/2008 |
| 7320941 | Plasma stabilization method and plasma apparatus There is disclosed a plasma technique in which a plasma generation technique frequently used in various fields including a semiconductor manufacturing process is used, and generation of plasma instability (high-speed impedance change of a plasma) can efficiently be ... | 01/22/2008 |
| 7316199 | Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber A magnetic field generator for producing a magnetic field that accelerates plasma formation is placed proximate a reaction chamber of semiconductor substrate processing system. The magnetic field generator has four main magnetic coil sections for producing a magneti... | 01/08/2008 |
| 7309961 | Driving frequency modulation system and method for plasma accelerator A plasma accelerator (300) is disclosed that has three separate sections of coils (301-316) disposed outside the plasma chamber (321). The separate sections of coils include an initial discharge section (309-316), an acceler... | 12/18/2007 |
| 7305935 | Slotted antenna waveguide plasma source A high density plasma generated by microwave injection using a windowless electrodeless rectangular slotted antenna waveguide plasma source has been demonstrated. Plasma probe measurements indicate that the source could be applicable for low power ion thruster appli... | 12/11/2007 |
| 7296533 | Radial antenna and plasma device using it A plasma device includes a first conductive plate (31) in which a plurality of slots (36) are formed, a second conductive plate (32) having a microwave inlet (35) and disposed opposite to the first conductive plate (31), a ring mem... | 11/20/2007 |
| 7291286 | Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses Methods for removing black silicon or black silicon carbide from a plasma-exposed surface of an upper electrode of a plasma processing chamber are provided. The methods include forming a plasma using a gas composition containing a fluorine-containing gas, and removi... | 11/06/2007 |
| 7288485 | Device and method for anisotropic plasma etching of a substrate, particularly a silicon element A method and a device suitable for its execution are provided for the anisotropic plasma etching of a substrate, especially a silicon element. The device has a chamber and a plasma source for generating a high-frequency electromagnetic alternating field and a reacti... | 10/30/2007 |
| 7279066 | Apparatus for forming silicon oxide film A silicon oxide film (1701) serving as a gate insulating film of a semiconductor device contains Kr. Therefore, the stress in the silicon oxide film (1701) and the stress at the interface between silicon and the silicon oxide film are relaxed, and the ... | 10/09/2007 |
| 7255062 | Pseudo surface microwave produced plasma shielding system A pseudo surface microwave produced plasma shielding system is a simple device that creates a prescribed plasma environment with a prescribed plasma density gradient, and protects an object surrounded by this environment as a shield. Pseudo surface microwaves intera... | 08/14/2007 |
| 7234413 | Plasma processing apparatus In a plasma processing apparatus, microwaves being transmitted in a waveguide pass through a microwave transmitted window via first and second slot antennas provided in a magnetic field side, so as to form surface waves. Process gas in a chamber is excited by the su... | 06/26/2007 |
| 7226524 | Plasma processing apparatus A plasma processing apparatus includes an evacuatable processing vessel; a workpiece mount base for mounting thereon an object to be processed; a microwave transmitting plate provided in an opening of a ceiling of the processing vessel; a planar antenna member for s... | 06/05/2007 |
| 7217337 | Plasma process chamber and system The present invention relates to a plasma process chamber, which includes: an upper housing having a gas inlet connected to a gas source, and a gas shower head placed in the upper housing; and a lower housing having a gas outlet connected to a vacuum pump, and a sub... | 05/15/2007 |
| 7214903 | Melting and vaporizing apparatus and method An apparatus and method for heating materials or substances in an oven at an oven temperature below their melting and/or vaporization points to either melt and/or vaporize the substance. Substances are inserted into a substantially spherical envelope. The envelope i... | 05/08/2007 |
| 7210424 | High-density plasma processing apparatus A high-density plasma processing apparatus includes a processing chamber, having a susceptor for supporting an object to be processed positioned therein and a dielectric window positioned on the processing chamber to form an upper surface of the processing chamber. ... | 05/01/2007 |
| 7171919 | Diamond film depositing apparatus using microwaves and plasma Disclosed herewith is a diamond film depositing apparatus using microwaves and plasma. The apparatus comprises a rectangular wave guide (125), a mode transition coupler (120), an antenna rod (130), a quartz bell jar (140), a workpiece hol... | 02/06/2007 |
| 7161110 | Melting and vaporizing apparatus and method An apparatus and method for heating materials or substances in an oven at an oven temperature below their melting and/or vaporization points to either melt and/or vaporize the substance. Substances are inserted into a substantially spherical envelope. The envelope i... | 01/09/2007 |
| 7156046 | Plasma CVD apparatus A plasma CVD apparatus in which microwave power is supplied into a reaction chamber provided inside an annular waveguide through an antenna provided on the inner peripheral part of the waveguide to produce a plasma inside the reaction chamber and to form a film by a... | 01/02/2007 |
| 7138767 | Surface wave plasma processing system and method of using A SWP source includes an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. A power coupling system is coupled to the E... | 11/21/2006 |
| 7131391 | Plasma reaction chamber liner comprising ruthenium The invention encompasses a method of enhancing selectivity of etching silicon dioxide relative to one or more organic substances. A material comprising one or more elements selected from Group VIII of the periodic table is provided within a reaction chamber; and a ... | 11/07/2006 |
| 7128805 | Multiple elliptical ball plasma apparatus A plasma generating device, has a plurality of cavities shaped like half-ellipsoids, a plasma cavity, and microwave sources. The present invention takes advantage of geometrical properties of the propagation of electromagnetic waves by enclosing an electromagnetic f... | 10/31/2006 |
| 7118683 | Methods of etching silicon-oxide-containing compositions The invention encompasses a method of enhancing selectivity of etching silicon dioxide relative to one or more organic substances. A material comprising one or more elements selected from Group VIII of the periodic table is provided within a reaction chamber; and a ... | 10/10/2006 |
| 7097735 | Plasma processing device In a microwave plasma processing apparatus that uses a radial line slot antenna, the efficiency of cooling of a shower plate is optimized and simultaneously the efficiency of microwave excitation is optimized, by causing a radiation surface of the radial line slot a... | 08/29/2006 |
| 7094706 | Device and method for etching a substrate by using an inductively coupled plasma A device and a method for etching a substrate, in particular a silicon body, by using an inductively coupled plasma. A high-frequency electromagnetic alternating field is generated using an ICP source, and an inductively coupled plasma composed of reactive particles... | 08/22/2006 |
| 7081710 | Elementary plasma source and plasma generation apparatus using the same An elementary plasma source for generating plasma is provided. In the elementary plasma source, first and second magnets are shaped like a hollow cylinder, and the second magnet surrounds the first magnet, for forming a magnetic trap between the first and second mag... | 07/25/2006 |
| 7067034 | Method and apparatus for plasma forming inner magnetic bucket to control a volume of a plasma A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber includes a chamber within which a plasma is both ignited and sustained for processing. The chamber is defined at least in part by a wall and... | 06/27/2006 |
| 7060931 | Neutral beam source having electromagnet used for etching semiconductor device Disclosed is a neutral beam source used for etching a semiconductor device. The neutral beam source includes a plasma chamber having quartz provided at an outer wall thereof with an RF coil, a grid assembly, a reflective member, and an electromagnet arranged around ... | 06/13/2006 |
| 7059267 | Use of pulsed grounding source in a plasma reactor A method for grounding a semiconductor substrate pedestal during a portion of a high voltage power bias oscillation cycle to reduce or eliminate the detrimental effects of feature charging during the operation of a plasma reactor. ... | 06/13/2006 |
| 7056416 | Atmospheric pressure plasma processing method and apparatus Provided is a plasma processing method for generating microplasma in a space of a microplasma source arranged in the vicinity of an object to be processed by supplying gas to the space and supplying electric power to a member located in the vicinity of the space, ma... | 06/06/2006 |
| 7041202 | Timing apparatus and method to selectively bias during sputtering A system and method for sputtering using a plurality of different bias voltages, a plurality of target-cathodes that can be powered at different voltages disposed along said path of travel, and a controller configured to selectively vary the target-cathode voltage a... | 05/09/2006 |
| 7001491 | Vacuum-processing chamber-shield and multi-chamber pumping method One or more chambers of a multi-chamber vacuum processing apparatus are provided with a high gas flow conductance path to an exhaust volume of the apparatus that is maintained at high vacuum with a high vacuum pump. Separate pumps for the one or more chambers are ma... | 02/21/2006 |
| 6965287 | Low reflection microwave window A microwave window for transmitting microwave radiation includes a solid body and a flange. The solid body includes a first surface and a second surface spaced apart from each other in a first direction thereby defining a thickness of the solid body in the first dir... | 11/15/2005 |
| 6963043 | Asymmetrical focus ring An asymmetrical focus ring varies the flow-field, which aids in normalizing pressure gradients across the wafer being processed, thereby improving the process. Embodiments of the present invention utilize a focus ring that either (1) contains a pattern of through ho... | 11/08/2005 |