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| Number | Title | Issue Date |
| 8142607 | High density helicon plasma source for wide ribbon ion beam generation An ion source, capable of generating high density wide ribbon ion beam, utilizing one or more helicon plasma sources is disclosed. In addition to the helicon plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction ... | 03/27/2012 |
| 7901540 | Dense fluid delivery apparatus The present invention generally relates to a method and apparatus to produce and apply a variety of surface cleaning and modification spray treatments. More specifically, the present invention provides the simultaneous steps of selectively removing one or more unwan... | 03/08/2011 |
| 7695590 | Chemical vapor deposition plasma reactor having plural ion shower grids A plasma reactor for processing a semiconductor workpiece includes a reactor chamber and a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower reactor region, each of the ion shower grids having plural orif... | 04/13/2010 |
| 7371689 | Backside unlayering of MOSFET devices for electrical and physical characterization A method and system for backside unlayering a semiconductor device to expose FEOL semiconductor features of the device for subsequent electrical and/or physical probing. A window is formed within a backside substrate layer of the semiconductor. A collimated ion plas... | 05/13/2008 |
| 7354500 | Mask and apparatus using it to prepare sample by ion milling A mask for use with a sample preparation apparatus that prepares an ion-milled sample adapted to be observed by an electron microscope is offered. It is possible to prepare the sample having a desired cross section by the use of the mask. The mask, which defines the... | 04/08/2008 |
| 7347915 | Plasma in-situ treatment of chemically amplified resist A method for creating semiconductor devices by etching a layer over a wafer is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. The wafer is placed in a process chamber. The photoresist is hardened by providing a hardening pl... | 03/25/2008 |
| 7345288 | Sample holder and ion-beam processing system A sample holder and ion-beam processing system are offered which permit a good sample adapted for observation (such as TEM (transmission electron microscopy) observation). The sample holder has a sample placement portion having a sample adhering surface. The holder ... | 03/18/2008 |
| 7323080 | Apparatus for treating substrate The present is directed to an apparatus for etching the top edge and bottom of a wafer. The apparatus includes a substrate support part for supporting a wafer and a movable protect part for preventing fluid for an etch from flowing into a non-etch portion of the waf... | 01/29/2008 |
| 7314689 | System and method for processing masks with oblique features A method and system is disclosed for processing one or more oblique features on a mask or reticle substrate. After aligning the mask or reticle substrate with a predetermined reference system, an offset angle of a feature to be processed on the mask or reticle subst... | 01/01/2008 |
| 7314574 | Etching method and apparatus An etching apparatus comprises a workpiece holder (21) for holding a workpiece (X), a plasma generator (10, 20) for generating a plasma (30) in a vacuum chamber (3), an orifice electrode (4) disposed between the workpiece holder ( | 01/01/2008 |
| 7312135 | Laser processing apparatus The present invention provides a laser processing apparatus having a laser oscillator for outputting a pulsed laser beam; deflection unit for deflecting the pulsed laser beam to irradiate a object to be processed with the deflected pulsed laser beam; a mounting base... | 12/25/2007 |
| 7304263 | Systems and methods utilizing an aperture with a reactive atom plasma torch The footprint of a reactive atom plasma processing tool can be modified using an aperture device. A flow of reactive gas can be injected into the center of an annular plasma. An aperture can be positioned relative to the plasma such that the effective footprint of t... | 12/04/2007 |
| 7291360 | Chemical vapor deposition plasma process using plural ion shower grids A chemical vapor deposition process is carried out in a reactor chamber having a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower process region, each of the ion shower grids having plural orifices in mu... | 11/06/2007 |
| 7288173 | Ion beam processing system and ion beam processing method An ion beam processing system emitting an ion beam at a workpiece to process the workpiece, provided with an electrode for applying an electric field to the workpiece, the potential of the electrode being made 0V or a negative potential, and a cover insulated from t... | 10/30/2007 |
| 7285788 | Ion beam extractor An ion beam extractor controls a direction and an intensity of ion beams by adjusting a voltage applied to a grid having slits formed therein, thereby enhancing uniformity of an etching rate of a wafer, leading to an increase of productivity of semiconductor diodes.... | 10/23/2007 |
| 7276140 | Plasma accelerating apparatus for semiconductor substrate processing and plasma processing system having the same A plasma accelerating apparatus and a plasma processing system having the same are provided. The apparatus includes a circular channel comprising an inner wall, an outer wall, and an end wall connected to an end of the inner wall and the outer wall to form an outlet... | 10/02/2007 |
| 7264741 | Coater having substrate cleaning device and coating deposition methods employing such coater A coater having a substrate cleaning device is disclosed. Also disclosed are methods of processing substrates in a coater equipped with a substrate cleaning device. The substrate cleaning device comprises an ion gun (i.e., an ion source) that is positioned beneath a... | 09/04/2007 |
| 7259378 | Closed drift ion source A closed drift ion source which includes a channel having an open end, a closed end, and an input port for an ionizable gas. A first magnetic pole is disposed on the open end of the channel and extends therefrom in a first direction. A second magnetic pole disposed ... | 08/21/2007 |
| 7244474 | Chemical vapor deposition plasma process using an ion shower grid A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction r... | 07/17/2007 |
| 7241360 | Method and apparatus for neutralization of ion beam using AC ion source There is provided by this invention a unique ion source for depositing thin films on a substrate in a vacuum chamber that neutralizes the positive electric charges that develop on the substrate and vacuum chamber apparatus that may cause arcing and degradation of th... | 07/10/2007 |
| 7189654 | Manufacturing method for wiring In the case in which a film for a resist is formed by spin coating, there is a resist material to be wasted, and the process of edge cleaning is added as required. Further, when a thin film is formed on a substrate using a vacuum apparatus, a special apparatus or eq... | 03/13/2007 |
| 7165506 | Method and device for plasma-treating the surface of substrates by ion bombardment In an ion etching method for reducing a substrate thickness, an electric arc is generated in a vacuum chamber such that the electric arc is locally separated from the substrate and circulates about the substrate. A plasma of a supplied etching gas is produced by the... | 01/23/2007 |
| 7157659 | Plasma processing method and apparatus In a state that a plate-shaped insulator is disposed adjacent to a plate-shaped electrode, a discharge gas containing an inert gas is supplied to a vicinity of a processing object from one gas exhaust port located nearer from the plate-shaped electrode, out of at le... | 01/02/2007 |
| 7144520 | Etching method and apparatus An etching apparatus comprises a workpiece holder (21) for holding a workpiece (X), a plasma generator (10, 20) for generating a plasma (30) in a vacuum chamber (3), an orifice electrode (4) disposed between the workpiece holder ( | 12/05/2006 |
| 7109487 | Particle beam device A particle beam device, in particular an electron microscope, having at least two particle beam columns and one object slide having a receiving surface for receiving an object. The particle beam device makes it possible to align the surface of the object perpendicul... | 09/19/2006 |
| 7100532 | Plasma production device and method and RF driver circuit with adjustable duty cycle A reactive circuit is disclosed as part of a method and system for generating high density plasma that does not require the use of a dynamic matching network for directly driving a plasma exhibiting a dynamic impedance. The reactive network is designed to provide a ... | 09/05/2006 |
| 7094312 | Focused particle beam systems and methods using a tilt column Particle beam systems and methods for interacting with a workpiece according to this invention include a work stage assembly and a first particle beam source. The work stage assembly is adapted a) for supporting a workpiece, b) for translating along a first axis, c)... | 08/22/2006 |
| 7078862 | Beam source and beam processing apparatus A beam source has a plasma generating chamber, an antenna for generating plasma in the plasma generating chamber, a first electrode disposed in the plasma generating chamber, and a second electrode disposed in the plasma generating chamber. Both of the antenna and t... | 07/18/2006 |
| 7064491 | Ion implantation system and control method Ion implantation with high brightness, ion beam by ionizing gas or vapor, e.g. of dimers, or decaborane, by direct electron impact ionization adjacent the outlet aperture (46, 176) of the ionization chamber (80; 175)). Preferably: conditions are mainta... | 06/20/2006 |
| 7045793 | Multi-grid ion beam source for generating a highly collimated ion beam A multi-grid ion beam source has an extraction grid, an acceleration grid, a focus grid, and a shield grid to produce a highly collimated ion beam. A five grid ion beam source is also disclosed having two shield grids. The extraction grid has a high positive potenti... | 05/16/2006 |
| 7037854 | Method for chemical-mechanical jet etching of semiconductor structures A chemical-mechanical jet etching method rapidly removes large amounts of material in wafer thinning, or produces large-scale features on a silicon wafer, gallium arsenide substrate, or similar flat semiconductor workpiece, at etch rates in the range of 10–100 mic... | 05/02/2006 |
| 7034285 | Beam source and beam processing apparatus A beam source has a plasma generating chamber and a gas inlet port for introducing a gas into the plasma generating chamber. The beam source includes a plasma generator for generating positive-negative ion plasma containing positive ions at a density of at least 10 | 04/25/2006 |
| 7015146 | Method of processing backside unlayering of MOSFET devices for electrical and physical characterization including a collimated ion plasma A method and system for backside unlayering a semiconductor device to expose FEOL semiconductor features of the device for subsequent electrical and/or physical probing. A window is formed within a backside substrate layer of the semiconductor. A collimated ion plas... | 03/21/2006 |
| 7005032 | Wafer table for local dry etching apparatus To resolve a problem that an etching rate profile is changed by a position of a nozzle relative to a semiconductor wafer and accordingly, at a vicinity of an outer edge of the semiconductor wafer, an accurate machining result is difficult to achieve, gas including a... | 02/28/2006 |
| 6989228 | Method and apparatus for processing samples Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment,... | 01/24/2006 |
| 6983718 | Electron beam physical vapor deposition apparatus An electron beam physical vapor deposition (EBPVD) apparatus and a method for using the apparatus to produce a coating material (e.g., a ceramic thermal barrier coating) on an article. The EBPVD apparatus generally includes a coating chamber that is operable at elev... | 01/10/2006 |
| 6969848 | Method of chemical ionization at reduced pressures This invention comprises an apparatus and method for generating sample ions from sample molecules in which a mixture of a sample and a matrix are vaporized by a laser beam and Subsequently ionized by reagent corona ions. The decoupling of the vaporization and ioniza... | 11/29/2005 |
| 6949147 | In situ module for particle removal from solid-state surfaces Apparatus and a method for removing particles from the surface of a substrate include determining respective position coordinates of the particles on the surface. A beam of electromagnetic energy is directed via an optical cleaning arm at the coordinates of each of ... | 09/27/2005 |
| 6942892 | Hot element CVD apparatus and a method for removing a deposited film The present invention provides a method for efficiently and completely removing a film deposited inside a film forming chamber. In addition, the invention provides a CVD apparatus using heating element which an in-situ cleaning method can be applied and its in-situ ... | 09/13/2005 |
| 6943350 | Methods and apparatus for electron beam inspection of samples Methods and apparatus are providing for inspecting a test sample. An electron beam is tuned to cause secondary electron emissions upon scanning a target area. Reactive substances are introduced to etch and remove materials and impurities from the scan target. Residu... | 09/13/2005 |
