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| Number | Title | Issue Date |
| 8092641 | System and method for removing organic residue from a charged particle beam system A system and method for removing an organic residue from a charged particle beam system includes a conduit that is coupled to the column and is for adding oxygen to the column. A heater is coupled to the column and is for increasing the temperature in the column. A ... | 01/10/2012 |
| 8062471 | Proximity head heating method and apparatus Provided is an apparatus and a method for heating fluid in a proximity head. A fluid source supplies fluid to a channel within the proximity head. The fluid flows in the channel, through the proximity head, to an outlet port located on a bottom surface of the proxim... | 11/22/2011 |
| 7718032 | Dry non-plasma treatment system and method of using A dry non-plasma treatment system and method for removing oxide material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry, including HF and optionally N... | 05/18/2010 |
| 7430986 | Plasma confinement ring assemblies having reduced polymer deposition characteristics Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes ... | 10/07/2008 |
| 7419566 | Plasma reactor The plasma reactor comprises at least one cooling device (15, 16) consisting of two cooling elements (15a, 15b; 16a, 16b) adapted to be separately switched on and off. The heat produced during the plasma... | 09/02/2008 |
| 7416633 | Plasma processing apparatus Described is a vacuum processing apparatus that includes a vacuum container which has a processing chamber inside thereof, wherein a plasma used for processing a sample is formed inside the processing chamber. The processing chamber has an upper side wall which surr... | 08/26/2008 |
| 7413639 | Energy and media connection for a coating installation comprising several chambers The invention relates to an energy and media connection module for coating installations. Said module serves for supplying with cooling water, compressed air, process gases, signal, control and cathode power. It can be moved from one coating chamber to another coati... | 08/19/2008 |
| 7381275 | Apparatus and method for manufacturing semiconductor The present invention provides a semiconductor manufacturing apparatus which stabilizes the quality of thickness of a film between solids, which is produced on a wafer in the semiconductor manufacturing apparatus by a CVD method using light, and improves in-plane th... | 06/03/2008 |
| 7361229 | Device for deposition with chamber cleaner and method for cleaning chamber A chamber cleaner includes a cleaner, which is sealed, a connector passing through a side of the cleaner, lamp assembly connected to the connector and uniformly arranged in an inside surface of the cleaner, a heat-source assembled in the lamp assembly and an exhaust... | 04/22/2008 |
| 7358193 | Apparatus for forming nanoholes and method for forming nanoholes A vacuum chamber includes a plasma generating space in its interior. A magnetic field generating device applies a fluctuating magnetic field to the plasma generating space to cause plasma therein to fluctuate. A substrate is placed in the plasma generating space so ... | 04/15/2008 |
| 7354501 | Upper chamber for high density plasma CVD The present invention is directed to an upper chamber design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. Embodiments of the invention improve temperature control of the upper chamber and improve particle ... | 04/08/2008 |
| 7337745 | Electrode, susceptor, plasma processing apparatus and method of making the electrode and the susceptor A susceptor 24 includes a heater 38 disposed in a planar state, upper and lower ceramic-metal composites 40A and 40B disposed so as to sandwich the heater 38 from above and from below, and a ceramic electrostatic chuck 28 fo... | 03/04/2008 |
| 7316761 | Apparatus for uniformly etching a dielectric layer Apparatus for plasma etching a layer of material upon a substrate comprising an anode having a first region protruding from a second region, wherein the second region defines a plane and the first region extends from said plane. In one embodiment, at least one solen... | 01/08/2008 |
| 7314526 | Reaction chamber for an epitaxial reactor Reaction chamer (10) for an epitaxial reactor comprising a belljar (14) made of insulating, transparent and chemically resistant material, a susceptor (24) provided with disk-shaped cavities (34a-n) for receiving wafers (... | 01/01/2008 |
| 7291545 | Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltage A method of ion implanting a species in a workpiece to a selected ion implantation profile depth includes placing a workpiece having a semiconductor material on an electrostatic chuck in or near a processing region of a plasma reactor chamber and applying a chucking... | 11/06/2007 |
| 7282112 | Method and apparatus for an improved baffle plate in a plasma processing system The present invention presents an improved baffle plate for a plasma processing system, wherein the design and fabrication of the baffle plate advantageously provides for a uniform processing plasma in the process space with substantially minimal erosion of the baff... | 10/16/2007 |
| 7276124 | Reactor having a movable shutter A shutter assembly for a reactor includes a cylindrical shutter for selectively closing a passthrough opening of the reactor, the shutter forming a closed loop and including an internal cavity adapted to receive a cooling fluid, tubing connected with the cylindrical... | 10/02/2007 |
| 7245136 | Methods of processing a workpiece, methods of communicating signals with respect to a wafer, and methods of communicating signals within a workpiece processing apparatus An electronic device workpiece processing apparatus and method of communicating signals within an electronic device workpiece processing apparatus are provided. One embodiment of an electronic device workpiece processing apparatus includes a chuck including a surfac... | 07/17/2007 |
| 7241475 | Method for producing carbon surface films by plasma exposure of a carbide compound Reactive halogen-ion plasmas, having for example, generating chloride ions, generated from low-pressure halogen gases using a radio-frequency plasma are employed for producing low-friction carbon coatings, such as a pure carbon film, at or near room temperature on a... | 07/10/2007 |
| 7234412 | Semiconductor substrate deposition processor chamber liner apparatus A method includes removing at least a piece of a deposition chamber liner from a deposition chamber by passing it through a passageway to the deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing. A repl... | 06/26/2007 |
| 7234413 | Plasma processing apparatus In a plasma processing apparatus, microwaves being transmitted in a waveguide pass through a microwave transmitted window via first and second slot antennas provided in a magnetic field side, so as to form surface waves. Process gas in a chamber is excited by the su... | 06/26/2007 |
| 7220320 | Systems for producing semiconductors and members therefor The present invention provides members that are provided around a susceptor for mounting a semiconductor in a chamber for a semiconductor production system. Each member has a function of independently generating heat to heat the semiconductor, at least by radiation,... | 05/22/2007 |
| 7220943 | RF stand offs This invention relates to RV stand offs or breaks and in particular, but not exclusively not to stand offs which are suitable for use in plasma generating apparatus. A stand off 14 includes a resistive or insulating cylinder 15, through which gas feeds... | 05/22/2007 |
| 7217337 | Plasma process chamber and system The present invention relates to a plasma process chamber, which includes: an upper housing having a gas inlet connected to a gas source, and a gas shower head placed in the upper housing; and a lower housing having a gas outlet connected to a vacuum pump, and a sub... | 05/15/2007 |
| 7217670 | Dummy substrate for thermal reactor A single substrate reactor system for processing batches of product substrates one at a time is provided with at least one dummy substrate. In the time after one batch of product substrates is processed and before another batch of product substrates is ready for pro... | 05/15/2007 |
| 7208422 | Plasma processing method A plasma processing method utilizing a plasma processing apparatus having a plasma generating unit, a process chamber including an outer cylinder for withstanding a reduced pressure, and an inner cylinder made of non-magnetic material and being replaceable arranged ... | 04/24/2007 |
| 7190889 | Non-contact heater and method for non-contact heating of a substrate for material deposition A heater for the non-contact heating of an object, such as a substrate for material deposition, includes a housing defining a deposition cavity and a source of radiation outside the deposition cavity. A reflector is optically coupled to the source of radiation to co... | 03/13/2007 |
| 7186313 | Plasma chamber wall segment temperature control A device and method for controlling the temperature of a plasma chamber inside wall or other surfaces exposed to the plasma by a plurality of temperature control systems. A plasma process within the plasma chamber can be controlled by independently controlling the t... | 03/06/2007 |
| 7166165 | Barrier coating for vitreous materials A chemical vapor deposition apparatus comprises a reaction chamber and one or more vitreous components having an outer surface that is covered at least in part by a devitrification barrier layer. In some arrangements, the one or more vitrious components can include ... | 01/23/2007 |
| 7166200 | Method and apparatus for an improved upper electrode plate in a plasma processing system The present invention presents an improved upper electrode for a plasma processing system, wherein the design and fabrication of an electrode plate coupled to an upper assembly advantageously provides gas injection of a process gas with substantially minimal erosion... | 01/23/2007 |
| 7163587 | Reactor assembly and processing method A reactor assembly and processing method for treating a substrate generally includes a base unit, a chuck assembly, a process chamber, an inlet manifold assembly and an exit manifold assembly. The inlet manifold assembly is in fluid communication with a first openin... | 01/16/2007 |
| 7163603 | Plasma source assembly and method of manufacture A plasma source assembly including an outer shield, a dielectric chamber wall, and a helical coil provided between the outer shield and the dielectric chamber wall. The plasma source assembly also includes a coil support assembly configured to facilitate repeatable ... | 01/16/2007 |
| 7164236 | Method and apparatus for improved plasma processing uniformity A method and apparatus for generating and controlling a plasma (130) formed in a capacitively coupled plasma system (100) having a plasma electrode (140) and a bias electrode in the form of a workpiece support member (170), wherein the pl... | 01/16/2007 |
| 7160812 | Method for preventing electrode deterioration in etching apparatus A method for preventing the deterioration of an electrode caused by the build up of deposits in openings of the electrode. Gas is supplied to each of the openings in order to prevent deposits from adhering to the openings before or after the etching treatment. ... | 01/09/2007 |
| 7147718 | Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates The invention relates to a device and method for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates in a process chamber, by means of reaction gases which are fed to the process chamber where they rea... | 12/12/2006 |
| 7128804 | Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof A corrosion resistant component of a plasma chamber includes a liquid crystalline polymer. In a preferred embodiment, the liquid crystalline polymer (LCP) is provided on an aluminum component having an anodized or non-anodized surface. The liquid crystalline polymer... | 10/31/2006 |
| 7098599 | Plasma generator The whole antenna conductor is housed in the interior of a vacuum container of a plasma generator thereby to eliminate the need for an insulating partition or a top plate so that the whole induction field radiated from the antenna can be effectively utilized. Furthe... | 08/29/2006 |
| 7094670 | Plasma immersion ion implantation process A method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber, includes placing the workpiece on a workpiece support in the chamber, controlling a temperature of the wafer support near a constant level, performing plasma immersi... | 08/22/2006 |
| 7090727 | Heated gas line body feedthrough for vapor and gas delivery systems and methods for employing same A feedthrough device for use in deposition chambers such as chemical vapor deposition chambers and atomic layer deposition chambers and methods using the same in association with such chambers as well as chambers so equipped. The feedthrough device includes an assoc... | 08/15/2006 |
| 7074298 | High density plasma CVD chamber The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. In one embodiment, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma pr... | 07/11/2006 |
