Did You Know...
...Chester Carlson was a patent agent who tired of having to make multiple copies of patent applications using the only duplication method available at the time: carbon paper. In 1959 he came up with a new copying system and took it to IBM for evaluation. The "experts" at IBM determined potential sales to be only 5,000 units because people wouldn't want to use a bulky machine when they had carbon paper. Carlson's invention was the xerography process, the company founded on the system is Xerox.
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| Number | Title | Issue Date |
| 8133347 | Vacuum plasma generator Workpieces in a vacuum chamber are treated by receiving a mains voltage from a voltage supply network; generating at least one intermediate circuit voltage; generating a first RF signal of a basic frequency, and of a first phase position, from the at least one inter... | 03/13/2012 |
| 8075732 | EUV collector debris management A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength ... | 12/13/2011 |
| 8057633 | Post-etch treatment system for removing residue on a substrate A post-etch treatment system is described for removing photoresist and etch residue formed during an etching process. For example, the etch residue can include halogen containing material. The post-etch treatment system comprises a vacuum chamber, a radical generati... | 11/15/2011 |
| 8038836 | Plasma processing apparatus A plasma processing apparatus includes a barrier wall member disposed between a plasma generation chamber and a processing chamber to separate the plasma generation chamber from the processing chamber. The barrier wall member assumes a fin structure achieved by disp... | 10/18/2011 |
| 7862683 | Chamber dry cleaning An apparatus and method for improving the chamber dry cleaning of a PECVD system. The apparatus includes an annular gas ring with multiple outlets for introducing a cleaning gas into the process chamber, and the method includes using the gas ring to introduce a clea... | 01/04/2011 |
| 7604708 | Cleaning of native oxide with hydrogen-containing radicals A substrate cleaning apparatus has a remote source to remotely energize a hydrogen-containing gas to form an energized gas having a first ratio of ionic hydrogen-containing species to radical hydrogen-containing species. The apparatus has a process chamber with a su... | 10/20/2009 |
| 7452443 | Vacuum plasma generator A vacuum plasma generator is used for treating workpieces in a vacuum chamber. The vacuum plasma generator includes a mains connection for connection to a voltage supply network, and at least one mains rectifier. The at least one mains rectifier is connected to at l... | 11/18/2008 |
| 7430984 | Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements A plasma reactor for processing a workpiece, the plasma reactor comprising an enclosure, a workpiece support within the enclosure facing an overlying portion of the enclosure, the workpiece support and the overlying portion of the enclosure defining a process region... | 10/07/2008 |
| 7411148 | Plasma generation apparatus A plasma generation apparatus includes: a chamber having a chamber lid and defining an airtight reaction region; a susceptor in the chamber; a gas supplier supplying a process gas to the chamber; and a toroidal core vertically disposed with respect to the susceptor ... | 08/12/2008 |
| 7392759 | Remote plasma apparatus for processing substrate with two types of gases In a plasma CVD apparatus, a plate formed with a plurality of perforated holes is arranged to separate a plasma generation region and a processing region. The aperture ratio of the perforated holes to the plate is not greater than five percent. Plasma including radi... | 07/01/2008 |
| 7363876 | Multi-core transformer plasma source A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and... | 04/29/2008 |
| 7358192 | Method and apparatus for in-situ film stack processing Embodiments of a cluster tool, processing chamber and method for processing a film stack are provided. In one embodiment, a method for in-situ etching of silicon and metal layers of a film stack is provided that includes the steps of etching an upper metal layer of ... | 04/15/2008 |
| 7353771 | Method and apparatus of providing power to ignite and sustain a plasma in a reactive gas generator According to a first aspect, a power supply and a method of providing power for igniting a plasma in a reactive gas generator is provided that includes (i) coupling a series resonant circuit that comprises a resonant inductor and a resonant capacitor between a switc... | 04/08/2008 |
| 7338575 | Hydrocarbon dielectric heat transfer fluids for microwave plasma generators A process and apparatus for cooling a plasma tube generally includes flowing a hydrocarbon dielectric heat transfer fluid into a space defined by the plasma tube and a concentric tube surrounding the plasma tube. In one embodiment, the hydrocarbon fluid is selected ... | 03/04/2008 |
| 7335611 | Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on... | 02/26/2008 |
| 7323401 | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern... | 01/29/2008 |
| 7323655 | Inductively coupled plasma reactor for producing nano-powder Disclosed herein is a high-frequency induction plasma reactor apparatus for producing nano-powder, which is configured to continuously manufacture nano-powder in large quantities using solid-phase powder as a starting raw material and to manufacture high-purity nano... | 01/29/2008 |
| 7320734 | Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage A system for processing a workpiece includes a plasma immersion ion implantation reactor with an enclosure having a side wall and a ceiling and defining a chamber, and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceil... | 01/22/2008 |
| 7319295 | High-frequency power supply structure and plasma CVD device using the same A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency powe... | 01/15/2008 |
| 7312162 | Low temperature plasma deposition process for carbon layer deposition A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone... | 12/25/2007 |
| 7312148 | Copper barrier reflow process employing high speed optical annealing A method of forming a barrier layer for a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier met... | 12/25/2007 |
| 7309961 | Driving frequency modulation system and method for plasma accelerator A plasma accelerator (300) is disclosed that has three separate sections of coils (301-316) disposed outside the plasma chamber (321). The separate sections of coils include an initial discharge section (309-316), an acceler... | 12/18/2007 |
| 7309842 | Shielded monolithic microplasma source for prevention of continuous thin film formation A monolithic microplasma source includes a dielectric substrate having an outer surface that is exposed to a time varying electric field. A gap layer is positioned on an inner surface of the dielectric substrate. A shield including a slit is positioned on the gap la... | 12/18/2007 |
| 7309395 | System for forming composite polymer dielectric film A system for depositing a composite polymer dielectric film on a substrate is disclosed, wherein the composite polymer dielectric film includes a low dielectric constant polymer layer disposed between a first silane-containing layer and a second silane-containing la... | 12/18/2007 |
| 7303982 | Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpi... | 12/04/2007 |
| 7297637 | Use of pulsed grounding source in a plasma reactor A method for grounding a semiconductor substrate pedestal during a portion of a high voltage power bias oscillation cycle to reduce or eliminate the detrimental effects of feature charging during the operation of a plasma reactor. ... | 11/20/2007 |
| 7294563 | Semiconductor on insulator vertical transistor fabrication and doping process A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conform... | 11/13/2007 |
| 7291545 | Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltage A method of ion implanting a species in a workpiece to a selected ion implantation profile depth includes placing a workpiece having a semiconductor material on an electrostatic chuck in or near a processing region of a plasma reactor chamber and applying a chucking... | 11/06/2007 |
| 7291360 | Chemical vapor deposition plasma process using plural ion shower grids A chemical vapor deposition process is carried out in a reactor chamber having a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower process region, each of the ion shower grids having plural orifices in mu... | 11/06/2007 |
| 7288491 | Plasma immersion ion implantation process One method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber includes initially depositing a seasoning film on the interior surfaces of the plasma reactor chamber before the workpiece is introduced, by introducing a seasoning... | 10/30/2007 |
| 7264688 | Plasma reactor apparatus with independent capacitive and toroidal plasma sources A plasma reactor includes a toroidal plasma source having an RF power applicator, and RF generator being coupled to the RF power applicator. The reactor further includes a capacitively coupled plasma source power applicator or electrode at the ceiling or the workpie... | 09/04/2007 |
| 7256094 | Method for changing threshold voltage of device in resist asher A method for forming a dopant in a substrate, by accumulating at least one dopant species in an asher chamber and forming the accumulated dopant species on an exposed portion of the substrate. A target concentration for the plasma chamber dopant species is determine... | 08/14/2007 |
| 7244474 | Chemical vapor deposition plasma process using an ion shower grid A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction r... | 07/17/2007 |
| 7245084 | Transformer ignition circuit for a transformer coupled plasma source An apparatus includes a vacuum chamber, an electrical transformer that surrounds the vacuum chamber to induce an electromagnetic field within the vacuum chamber, and an ignition circuit. The electrical transformer induces an electromagnetic field within the vacuum c... | 07/17/2007 |
| 7223676 | Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer A low temperature process for depositing a coating containing any of silicon, nitrogen, hydrogen or oxygen on a workpiece includes placing the workpiece in a reactor chamber facing a processing region of the chamber, introducing a process gas containing any of silic... | 05/29/2007 |
| 7217337 | Plasma process chamber and system The present invention relates to a plasma process chamber, which includes: an upper housing having a gas inlet connected to a gas source, and a gas shower head placed in the upper housing; and a lower housing having a gas outlet connected to a vacuum pump, and a sub... | 05/15/2007 |
| 7214327 | Anisotropic dry etching of Cu-containing layers A method and apparatus for dry etching pure Cu and Cu-containing layers (220, 310) for manufacturing integrated circuits. The invention uses a directional beam of O-atoms with high kinetic energy (340) to oxidize the Cu and Cu-containing layers, and et... | 05/08/2007 |
| 7204885 | Deposition system to provide preheating of chemical vapor deposition precursors Chemical vapor deposition systems include elements to preheat reactant gases prior to reacting the gases to form layers of a material on a substrate, which provides devices and systems with deposited layers substantially free of residual compounds from the reaction ... | 04/17/2007 |
| 7186313 | Plasma chamber wall segment temperature control A device and method for controlling the temperature of a plasma chamber inside wall or other surfaces exposed to the plasma by a plurality of temperature control systems. A plasma process within the plasma chamber can be controlled by independently controlling the t... | 03/06/2007 |
| 7183177 | Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement A method of fabricating a semiconductor-on-insulator structure from a pair of semiconductor wafers, includes forming an oxide layer on at least a first surface of a first one of the wafers and performing a bonding enhancement implantation step by ion implantation of... | 02/27/2007 |
